CYStech Electronics Corp. Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE13N08J3 BVDSS ID RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=7V, ID=20A 80V 53A 11.6 mΩ(typ) 12 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant and halogen-free package Symbol Outline MTE13N08J3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Ordering Information Device MTE13N08J3-0-T3-G Package TO-252 (RoHS compliant and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE13N08J3 CYStek Product Specification Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.1mH, ID=45A, VDD=25V (Note 2) Symbol VDS VGS IDM IAR Limits 80 ±25 53 38 8.5 6.8 80 45 EAS 101 10 100 50 2.5 1.6 -55~+175 ID IDSM Repetitive Avalanche Energy (Note 3) EAR TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 1) PD (Note 1) (Note 2) (Note 2) PDSM Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max (Note 2) (Note 4) Symbol RθJC RθJA RθJA Value 1.5 50 110 Unit °C/W °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. MTE13N08J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 80 2.2 - 0.1 2.7 38 11.6 12 4.2 ±100 1 10 15 16 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±25V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=20A VGS =7V, ID=20A 90 36 20 36 26 62 14 6952 189 171 - 0.69 20 63 53 80 1 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ nC VDD=40V, ID=20A,VGS=10V ns VDD=40V, ID=20A, VGS=10V, RG=3Ω pF VGS=0V, VDS=40V, f=1MHz A V ns nC IS=1A, VGS=0V VGS=0, IF=20A, dI/dt=500A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTE13N08J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 ID, Drain Current (A) 70 BVDSS, Normalized Drain-Source Breakdown Voltage 80 10V,9V,8V,7V,6V,5V 60 50 40 30 20 VGS=4V 1.2 1 0.8 0.6 ID=250μA, VGS=0V 10 0.4 0 0 1 2 3 4 VDS , Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=4.5V 100 VGS=7V 10 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 10 4 6 8 IDR , Reverse Drain Current(A) Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 3 ID=20A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 120 80 40 2.5 VGS=10V, ID=20A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 11.6mΩ typ. 0 0 0 MTE13N08J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -65 -35 -5 25 55 85 115 Tj, Junction Temperature(°C) 145 175 CYStek Product Specification Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 100 0.1 1 10 VDS, Drain-Source Voltage(V) -65 100 -35 -5 Forward Transfer Admittance vs Drain Current 85 115 145 175 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 55 Gate Charge Characteristics 100 10 1 VDS=5V 0.1 Ta=25°C Pulsed 0.01 0.001 8 6 4 VDS=40V ID=20A 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 100 ID, Maximum Drain Current(A) 10 100ms 1s DC 1 0.1 40 60 80 Qg, Total Gate Charge(nC) 100 70 100μs 1ms 10ms RDSON Limited 20 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area ID, Drain Current(A) 25 Tj, Junction Temperature(°C) TC=25°C, Tj=175°C VGS=10V, θJC=1.5°C/W Single Pulse 60 50 40 30 20 10 VGS=10V, RθJC=1.5°C/W 0 0.01 0.1 MTE13N08J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 6/ 9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 4000 80 TJ(MAX) =175°C TC=25°C θJC=1.5°C/W 3000 60 Power (W) ID, Drain Current(A) 3500 VDS=10V 70 50 40 2500 2000 30 1500 20 1000 10 500 0 0 2 4 6 8 VGS , Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE13N08J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTE13N08J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE13N08J3 CYStek Product Specification Spec. No. : C585J3 Issued Date : 2013.05.30 Revised Date : 2013.12.26 Page No. : 9/ 9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name E13 N08 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE13N08J3 CYStek Product Specification