COVER
DATA SHEET
2G bits DDR3 SDRAM
EDJ2104BDBG (512M words × 4 bits)
EDJ2108BDBG (256M words × 8 bits)
Specifications
Features
• Density: 2G bits
• Organization
— 64M words × 4 bits × 8 banks (EDJ2104BDBG)
— 32M words × 8 bits × 8 banks (EDJ2108BDBG)
• Package
— 78-ball FBGA (EDJ2104BDBG, EDJ2108BDBG)
— Lead-free (RoHS compliant) and Halogen-free
• Power supply: VDD = 1.5V ± 0.075V
• Data rate
— 1866Mbps/1600Mbps/1333Mbps/1066Mbps/
800Mbps (max)
• 1KB page size
— Row address: A0 to A14
— Column address: A0 to A9, A11 (EDJ2104BDBG)
A0 to A9 (EDJ2108BDBG)
• Eight internal banks for concurrent operation
• Interface: SSTL_15
• Burst length (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
— Sequential (8, 4 with BC)
— Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13
• /CAS Write Latency (CWL): 5, 6, 7, 8, 9
• Precharge: auto precharge option for each burst
access
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Refresh cycles
— Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Operating case temperature range
— TC = 0°C to +95°C
• Double-data-rate architecture: two data transfers per
clock cycle
• The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
— Synchronous ODT
— Dynamic ODT
— Asynchronous ODT
• Multi Purpose Register (MPR) for pre-defined pattern
read out
• ZQ calibration for DQ drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• /RESET pin for Power-up sequence and reset function
• SRT range:
— Normal/extended
• Programmable Output driver impedance control
Document. No. E1772E40 (Ver. 4.0)
Date Published December 2012 (K) Japan
Printed in Japan
URL: http://www.elpida.com
©Elpida Memory, Inc. 2011-2012
EDJ2104BDBG, EDJ2108BDBG
Ordering Information
Part number
EDJ2104BDBG-JS-F
EDJ2104BDBG-GN-F
EDJ2104BDBG-DJ-F
EDJ2104BDBG-AE-F
EDJ2104BDBG-8C-F
EDJ2108BDBG-JS-F
EDJ2108BDBG-GN-F
EDJ2108BDBG-DJ-F
EDJ2108BDBG-AE-F
EDJ2108BDBG-8C-F
Die
revision
D
D
Organization
(words × bits)
512M × 4
256M × 8
Internal
banks
JEDEC speed bin
(CL-tRCD-tRP)
78-ball FBGA
8
DDR3-1866M (13-13-13)
DDR3-1600K (11-11-11)
DDR3-1333H (9-9-9)
DDR3-1066F (7-7-7)
DDR3-800E (6-6-6)
78-ball FBGA
8
DDR3-1866M (13-13-13)
DDR3-1600K (11-11-11)
DDR3-1333H (9-9-9)
DDR3-1066F (7-7-7)
DDR3-800E (6-6-6)
Package
Part Number
E D J 21 04 B D BG - JS- F
Elpida Memory
Environment code
F: Lead Free (RoHS compliant)
and Halogen Free
Type
D: Packaged Device
Speed
JS: DDR3-1866M (13-13-13)
GN: DDR3-1600K (11-11-11)
DJ: DDR3-1333H (9-9-9)
AE: DDR3-1066F (7-7-7)
8C: DDR3-800E (6-6-6)
Product Family
J: DDR3
Density / Bank
21: 2Gb / 8-bank
Organization
04: x4
08: x8
Package
BG: FBGA
Power Supply, Interface
B: 1.5V, SSTL_15
Die Rev.
Detailed Information
For detailed electrical specification and further information, please refer to the DDR3 SDRAM General Functionality
and Electrical Condition data sheet (E1926E).
Data Sheet E1772E40 (Ver. 4.0)
2
EDJ2104BDBG, EDJ2108BDBG
Pin Configurations
Pin Configurations (×4/×8 configuration)
/xxx indicates active low signal.
78-ball FBGA (×4 configuration)
2
1
78-ball FBGA (×8 configuration)
3
7
8
9
NC
NC
VSS
VDD
1
A
2
3
7
8
9
A
VSS
VDD
VSS
B
VDD
NC
NU/(/TDQS) VSS
VDD
B
VSS VSSQ
DQ0
DM
VSSQ VDDQ
VSS VSSQ
C
DQ0
DM/TDQS VSSQ VDDQ
C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
D
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
VSSQ
DQ6
/DQS
VDD
VSS
VSSQ
VREFDQ VDDQ
DQ4
DQ7
DQ5
VDDQ
D
VSSQ
NC
/DQS
VDD
VSS
VSSQ
E
E
VREFDQ VDDQ
NC
NC
NC
VDDQ
F
F
NC
VSS
/RAS
CK
VSS
NC
G
NC
VSS
/RAS
CK
VSS
NC
ODT
VDD
/CAS
/CK
VDD
CKE
NC
/CS
/WE
A10(AP)
ZQ
NC
VSS
BA0
BA2
NC
VDD
A3
A0
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS /RESET A13
A14
A8
VSS
G
ODT
VDD
/CAS
/CK
VDD
CKE
H
H
NC
/CS
A10(AP)
/WE
ZQ
NC
J
J
VSS
BA0
BA2
NC
VREFCA VSS
K
VREFCA VSS
K
A3
VDD
A0
A12(/BC) BA1
VDD
L
A12(/BC) BA1
VDD
L
M
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
M
N
N
VSS /RESET A13
A14
A8
VSS
(Top view)
(Top view)
Pin name
Function
Pin name
Function
A0 to A14*3
Address inputs
A10(AP): Auto precharge
A12(/BC): Burst chop
/RESET*3
Active low asynchronous reset
BA0 to BA2*3
Bank select
VDD
Supply voltage for internal circuit
DQ0 to DQ7
Data input/output
VSS
Ground for internal circuit
DQS, /DQS
Differential data strobe
VDDQ
Supply voltage for DQ circuit
TDQS, /TDQS
Termination data strobe
VSSQ
Ground for DQ circuit
/CS*3
Chip select
VREFDQ
Reference voltage for DQ
Command input
VREFCA
Reference voltage for CA
Clock enable
ZQ
Reference pin for ZQ calibration
Differential clock input
NC*1
/RAS, /CAS, /WE*3
CKE*
3
CK, /CK
DM
Write data mask
ODT*3
ODT control
Notes: 1.
2.
3.
NU*
2
No connection
Not usable
Not internally connected with die.
Don't connect. Internally connected.
Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
Data Sheet E1772E40 (Ver. 4.0)
3
EDJ2104BDBG, EDJ2108BDBG
CONTENTS
Specifications ........................................................................................................................................ 1
Features ................................................................................................................................................ 1
Ordering Information ............................................................................................................................. 2
Part Number .......................................................................................................................................... 2
Detailed Information .............................................................................................................................. 2
Pin Configurations ................................................................................................................................. 3
1. Electrical Conditions ...................................................................................................................... 5
1.1
1.2
1.3
1.4
2.
Absolute Maximum Ratings ..............................................................................................................5
Operating Temperature Condition ....................................................................................................5
Recommended DC Operating Conditions ........................................................................................6
IDD and IDDQ Measurement Conditions ..........................................................................................7
Electrical Specifications ............................................................................................................... 18
2.1
2.2
2.3
DC Characteristics .......................................................................................................................... 18
Pin Capacitance .............................................................................................................................. 20
Standard Speed Bins ...................................................................................................................... 22
3.
Package Drawing ......................................................................................................................... 27
4.
Recommended Soldering Conditions .......................................................................................... 28
3.1
78-ball FBGA .................................................................................................................................. 27
Data Sheet E1772E40 (Ver. 4.0)
4
EDJ2104BDBG, EDJ2108BDBG
1.
Electrical Conditions
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
1.1
Absolute Maximum Ratings
Table 1: Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Notes
Power supply voltage
VDD
−0.4 to +1.975
V
1, 3
Power supply voltage for output
VDDQ
−0.4 to +1.975
V
1, 3
Input voltage
VIN
−0.4 to +1.975
V
1
Output voltage
VOUT
−0.4 to +1.975
V
1
Reference voltage
VREFCA
−0.4 to 0.6 × VDD
V
3
Reference voltage for DQ
VREFDQ
−0.4 to 0.6 × VDDQ
V
3
Storage temperature
Tstg
−55 to +100
°C
1, 2
Power dissipation
PD
1.0
W
1
Short circuit output current
IOUT
50
mA
1
Notes: 1.
2.
3.
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Storage temperature is the case surface temperature on the center/top side of the DRAM.
VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than 0.6 × VDDQ, When
VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Caution: Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
1.2
Operating Temperature Condition
Table 2: Operating Temperature Condition
Parameter
Symbol
Rating
Unit
Notes
Operating case temperature
TC
0 to +95
°C
1, 2, 3
Notes: 1.
2.
3.
Operating temperature is the case surface temperature on the center/top side of the DRAM.
The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During
operation, the DRAM case temperature must be maintained between 0°C to +85°C under all operating conditions.
Some applications require operation of the DRAM in the Extended Temperature Range between +85°C and +95°C case
temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9µs. (This double
refresh requirement may not apply for some devices.)
b) If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual
Self-Refresh mode with Extended Temperature Range capability (MR2 bit [A6, A7] = [0, 1]) or enable the optional Auto
Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).
Data Sheet E1772E40 (Ver. 4.0)
5
EDJ2104BDBG, EDJ2108BDBG
1.3
Recommended DC Operating Conditions
Table 3: Recommended DC Operating Conditions (TC = 0°C to +85°C)
Parameter
Symbol
min
typ
max
Unit
Notes
Supply voltage
VDD
1.425
1.5
1.575
V
1, 2
Supply voltage for DQ
VDDQ
1.425
1.5
1.575
V
1, 2
Notes: 1.
2.
Under all conditions VDDQ must be less than or equal to VDD.
VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Data Sheet E1772E40 (Ver. 4.0)
6
EDJ2104BDBG, EDJ2108BDBG
1.4
IDD and IDDQ Measurement Conditions
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined.
The figure Measurement Setup and Test Load for IDD and IDDQ Measurements shows the setup and test load for IDD
and IDDQ measurements.
• IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W,
IDD5B, IDD6, IDD6ET, IDD6TC and IDD7) are measured as time-averaged currents with all VDD balls of the DDR3
SDRAM under test tied together. Any IDDQ current is not included in IDD currents.
• IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all VDDQ balls of
the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ currents.
Note:IDDQ values cannot be directly used to calculate I/O power of the DDR3 SDRAM. They can be used to support
correlation of simulated I/O power to actual I/O power as outlined in correlation from simulated channel I/O
power to actual channel I/O power supported by IDDQ measurement.
For IDD and IDDQ measurements, the following definitions apply:
• L and 0: VIN ≤ VIL(AC)max
• H and 1: VIN ≥ VIH(AC)min
• MID-LEVEL: defined as inputs are VREF = VDDQ / 2
• FLOATING: don't care or floating around VREF.
• Timings used for IDD and IDDQ measurement-loop patterns are provided in Timings used for IDD and IDDQ
Measurement-Loop Patterns table.
• Basic IDD and IDDQ measurement conditions are described in Basic IDD and IDDQ Measurement Conditions
table.
Note:The IDD and IDDQ measurement-loop patterns need to be executed at least one time before actual IDD or
IDDQ measurement is started.
• Detailed IDD and IDDQ measurement-loop patterns are described in IDD0 Measurement-Loop Pattern table
through IDD7 Measurement-Loop Pattern table.
• IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not limited to setting.
RON = RZQ/7 (34Ω in MR1);
Qoff = 0B (Output Buffer enabled in MR1);
RTT_Nom = RZQ/6 (40Ω in MR1);
RTT_WR = RZQ/2 (120Ω in MR2);
TDQS Feature disabled in MR1
• Define D = {/CS, /RAS, /CAS, /WE} : = {H, L, L, L}
• Define /D = {/CS, /RAS, /CAS, /WE} : = {H, H, H, H}
Data Sheet E1772E40 (Ver. 4.0)
7
EDJ2104BDBG, EDJ2108BDBG
IDDQ
IDD
VDD
/RESET
CK, /CK
CKE
/CS
/RAS, /CAS, /WE
VDDQ
DDR3
SDRAM
Address, BA
ODT
ZQ
VSS
DQS, /DQS,
DQ, DM,
TDQS, /TDQS
RTT = 25Ω
VDDQ/2
VSSQ
Figure 2: Measurement Setup and Test Load for IDD and IDDQ Measurements
Application specific
memory channel
environment
Channel
I/O power
simulation
IDDQ
Test load
IDDQ
simulation
IDDQ
measurement
Correlation
Correction
Channel I/O power
number
Figure 3: Correlation from Simulated Channel I/O Power to Actual Channel I/O Power
Supported by IDDQ Measurement
Data Sheet E1772E40 (Ver. 4.0)
8
EDJ2104BDBG, EDJ2108BDBG
1.4.1
Timings Used for IDD and IDDQ Measurement-Loop Patterns
Table 4: Timings Used for IDD and IDDQ Measurement-Loop Patterns
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Parameter
6-6-6
7-7-7
9-9-9
11-11-11
Unit
CL
6
7
9
11
nCK
tCK(min)
2.5
1.875
1.5
1.25
ns
nRCD(min)
6
7
9
11
nCK
nRC(min)
21
27
33
39
nCK
nRAS(min)
15
20
24
28
nCK
nRP(min)
6
7
9
11
nCK
nFAW (1KB)
16
20
20
24
nCK
nFAW (2KB, 4KB)
20
27
30
32
nCK
nRRD (1KB)
4
4
4
5
nCK
nRRD (2KB, 4KB)
4
6
5
6
nCK
nRFC (1Gb)
44
59
74
88
nCK
nRFC (2Gb)
64
86
107
128
nCK
nRFC (4Gb)
104
139
174
208
nCK
nRFC (8Gb)
140
187
234
280
nCK
DDR3-1866
Parameter
13-13-13
CL
13
Unit
nCK
tCK(min)
1.07
ns
nRCD(min)
13
nCK
nRC(min)
45
nCK
nRAS(min)
32
nCK
nRP(min)
13
nCK
nFAW (1KB)
26
nCK
nFAW (2KB, 4KB)
33
nCK
nRRD (1KB)
5
nCK
nRRD (2KB, 4KB)
6
nCK
nRFC (1Gb)
103
nCK
nRFC (2Gb)
150
nCK
nRFC (4Gb)
243
nCK
nRFC (8Gb)
328
nCK
Data Sheet E1772E40 (Ver. 4.0)
9
EDJ2104BDBG, EDJ2108BDBG
1.4.2
Basic IDD and IDDQ Measurement Conditions
Table 5: Basic IDD and IDDQ Measurement Conditions
Parameter
Symbol
Description
IDD0
CKE: H; External clock: on; tCK, nRC, nRAS, CL: see Table 4; BL: 8*1; AL: 0; /CS: H
between ACT and PRE; Command, address, bank address inputs: partially toggling
according to Table 6; Data I/O: MID-LEVEL; DM: stable at 0;
Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 6);
Output buffer and RTT: enabled in MR*2; ODT signal: stable at 0; Pattern details: see
Table 6
IDD1
CKE: H; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 4; BL: 8*1, *6; AL:
0; /CS: H between ACT, RD and PRE; Command, address, bank address inputs, data
I/O: partially toggling according to Table 7;
DM: stable at 0; Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,...
(see Table 7); Output buffer and RTT: enabled in MR*2; ODT Signal: stable at 0;
Pattern details: see Table 7
IDD2N
CKE: H; External clock: on; tCK, CL: see Table 4 BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to Table 8;
data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer
and RTT: enabled in mode registers*2; ODT signal: stable at 0; pattern details: see
Table 8
Precharge standby
ODT current
IDD2NT
CKE: H; External clock: on; tCK, CL: see Table 4; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to Table 9;
data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer
and RTT: enabled in MR*2; ODT signal: toggling according to Table 9; pattern details:
see Table 9
Precharge standby
ODT IDDQ current
IDDQ2NT
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD
current
IDD2P0
CKE: L; External clock: on; tCK, CL: see Table 4; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL; DM:
stable at 0; bank activity: all banks closed; output buffer and RTT: EMR*2; ODT
signal: stable at 0; precharge power down mode: slow exit*3
IDD2P1
CKE: L; External clock: on; tCK, CL: see Table 4; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;
DM:stable at 0; bank activity: all banks closed; output buffer and RTT: enabled in
MR*2; ODT signal: stable at 0; precharge power down mode: fast exit*3
IDD2Q
CKE: H; External clock: On; tCK, CL: see Table 4; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;
DM: stable at 0;bank activity: all banks closed; output buffer and RTT: enabled in
MR*2; ODT signal: stable at 0
IDD3N
CKE: H; External clock: on; tCK, CL: see Table 4; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to Table 8;
data I/O: MID-LEVEL; DM: stable at 0;
bank activity: all banks open; output buffer and RTT: enabled in MR*2;
ODT signal: stable at 0; pattern details: see Table 8
IDD3P
CKE: L; External clock: on; tCK, CL: see Table 4; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL;
DM:stable at 0; bank activity: all banks open; output buffer and RTT:
enabled in MR*2; ODT signal: stable at 0
Operating burst read
current
IDD4R
CKE: H; External clock: on; tCK, CL: see Table 4; BL: 8*1, *6; AL: 0; /CS: H between
RD; Command, address, bank address Inputs: partially toggling according to
Table 10; data I/O: seamless read
data burst with different data between one burst and the next one according to
Table 10; DM: stable at 0;
bank activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...
(see Table 10); Output buffer and RTT: enabled in MR*2; ODT signal: stable at 0;
pattern details: see Table 10
Operating burst read
IDDQ current
IDDQ4R
Same definition like for IDD4R, however measuring IDDQ current instead of IDD
current
Operating one bank
active precharge
current
Operating one bank
active-read-precharge
current
Precharge standby
current
Precharge power-down
current slow exit
Precharge power-down
current fast exit
Precharge quiet
standby current
Active standby current
Active power-down
current
Data Sheet E1772E40 (Ver. 4.0)
10
EDJ2104BDBG, EDJ2108BDBG
Table 5: Basic IDD and IDDQ Measurement Conditions (cont’d)
Parameter
Operating burst write current
Burst refresh current
Self-refresh current: normal
temperature range
Symbol
Description
IDD4W
CKE: H; External clock: on; tCK, CL: see Table 4; BL: 8*1; AL: 0; /CS: H between WR;
command, address, bank address inputs: partially toggling according to Table 11;
data I/O: seamless write data burst with different data between one burst and the next
one according to IDD4W Measurement-Loop Pattern table; DM: stable at 0; bank
activity: all banks open,
WR commands cycling through banks: 0,0,1,1,2,2,.. (see Table 11); Output buffer
and RTT: enabled in MR*2; ODT signal: stable
at H; pattern details: see Table 11
IDD5B
CKE: H; External clock: on; tCK, CL, nRFC: see Table 4; BL: 8*1; AL: 0; /CS: H
between REF;
Command, address, bank address Inputs: partially toggling according to Table 12;
data I/O: MID-LEVEL; DM: stable at 0;
bank activity: REF command every nRFC (Table 12); output buffer and RTT: enabled
in MR*2; ODT signal: stable at 0; pattern
details: see Table 12
IDD6
TC: 0 to 85°C; ASR: disabled*4; SRT:
Normal*5; CKE: L; External clock: off; CK and /CK: L; CL: see Table 4; BL: 8*1;
AL: 0; /CS, command, address, bank address, data I/O: MID-LEVEL; DM: stable
at 0; bank activity: Self-refresh operation; output buffer and RTT: enabled in MR*2;
ODT signal: MID-LEVEL
Self-refresh current: extended
IDD6ET
temperature range
TC: 0 to 95°C; ASR: Disabled*4; SRT: Extended*5; CKE: L; External clock: off; CK
and /CK: L; CL: Table 4; BL: 8*1; AL: 0; /CS, command, address, bank address, data
I/O: MID-LEVEL;
DM: stable at 0; bank activity: Extended temperature self-refresh operation; output
buffer and RTT: enabled in MR*2; ODT signal: MID-LEVEL
Auto self-refresh current
(Optional)
IDD6TC
TC: 0 to 95°C; ASR: Enabled*4; SRT: Normal*5; CKE: L; External clock: off;
CK and /CK: L; CL: Table 4; BL: 8*1; AL: 0; /CS, command, address, bank address,
data I/O: MID-LEVEL; DM: stable at 0; bank activity: Auto self-refresh operation;
output buffer and RTT: enabled in MR*2; ODT signal: MID-LEVEL
IDD7
CKE: H; External clock: on; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Table 4;
BL: 8*1, *6; AL: CL-1; /CS: H between ACT and RDA; Command, address, bank
address Inputs: partially toggling according to Table 13; data I/O: read data bursts
with different data between one burst and the next one according to Table 13; DM:
stable at 0; bank activity: two times interleaved cycling through banks (0, 1, …7) with
different addressing, see Table 13; output buffer and RTT: enabled in MR*2; ODT
signal: stable at 0; pattern details: see Table 13
IDD8
/RESET: low; External clock: off; CK and /CK: low; CKE: FLOATING; /CS, command,
address, bank address, Data IO: FLOATING; ODT signal: FLOATING
RESET low current reading is valid once power is stable and /RESET has been low
for at least 1ms.
Operating bank interleave
read current
RESET low current
Notes: 1.
2.
3.
4.
5.
6.
Burst Length: BL8 fixed by MRS: MR0 bits [1,0] = [0,0].
MR: Mode Register
Output buffer enable: set MR1 bit A12 = 1 and MR1 bits [5, 1] = [0,1];
RTT_Nom enable: set MR1 bits [9, 6, 2] = [0, 1, 1]; RTT_WR enable: set MR2 bits [10, 9] = [1,0].
Precharge power down mode: set MR0 bit A12= 0 for Slow Exit or MR0 bit A12 = 1 for fast exit.
Auto self-refresh (ASR): set MR2 bit A6 = 0 to disable or 1 to enable feature.
Self-refresh temperature range (SRT): set MR0 bit A7= 0 for normal or 1 for extended temperature range.
Read burst type: nibble sequential, set MR0 bit A3 = 0
Data Sheet E1772E40 (Ver. 4.0)
11
EDJ2104BDBG, EDJ2108BDBG
Table 6: IDD0 Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
0
Toggling Static H
Notes: 1.
2.
3.
4.
Command /CS
/RAS /CAS /WE
ODT
A11
BA*3 -Am
A10
A7
-A9
A3
-A6
A0
-A2
0
ACT
0
0
1
1
0
0
0
0
0
0
0
1, 2
D, D
1
0
0
0
0
0
0
0
0
0
0
3, 4
/D, /D 1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
…
Repeat pattern 1…4 until nRAS − 1, truncate if necessary
nRAS
PRE
…
Repeat pattern 1...4 until nRC − 1, truncate if necessary
1 × nRC
+0
ACT
0
0
1
1
0
0
0
0
0
F
0
1 × nRC
+1, 2
D, D
1
0
0
0
0
0
0
0
0
F
0
1 × nRC
+ 3, 4
/D, /D 1
1
1
1
0
0
0
0
0
F
0
0
0
1
0
0
0
0
…
Repeat pattern nRC + 1,...,4 until 1 × nRC + nRAS − 1, truncate if necessary
1 × nRC
+ nRAS
PRE
0
0
1
0
0
0
0
0
…
Repeat nRC + 1,...,4 until 2 × nRC − 1, truncate if necessary
1
2 × nRC
Repeat Sub-Loop 0, use BA= 1 instead
2
4 × nRC
Repeat Sub-Loop 0, use BA= 2 instead
3
6 × nRC
Repeat Sub-Loop 0, use BA= 3 instead
4
8 × nRC
Repeat Sub-Loop 0, use BA= 4 instead
5
10 × nRC Repeat Sub-Loop 0, use BA= 5 instead
6
12 × nRC Repeat Sub-Loop 0, use BA= 6 instead
7
14 × nRC Repeat Sub-Loop 0, use BA= 7 instead
DM must be driven low all the time. DQS, /DQS are MID-LEVEL.
DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Data Sheet E1772E40 (Ver. 4.0)
12
0
F
0
Data*2
EDJ2104BDBG, EDJ2108BDBG
Table 7: IDD1 Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
0
Toggling Static H
Notes: 1.
2.
3.
4.
Command /CS
/RAS /CAS /WE
ODT
A11
BA*3 -Am
A10
A7 A3 A0
-A9 -A6 -A2 Data*2
0
ACT
0
0
1
1
0
0
0
0
0
0
0
⎯
1, 2
D, D
1
0
0
0
0
0
0
0
0
0
0
⎯
3, 4
/D, /D 1
1
1
1
0
0
0
0
0
0
0
⎯
0
0
0
0
00000000
0
0
0
0
⎯
…
Repeat pattern 1...4 until nRCD − 1, truncate if necessary
nRCD
RD
…
Repeat pattern 1...4 until nRAS − 1, truncate if necessary
nRAS
PRE
…
Repeat pattern 1...4 until nRC − 1, truncate if necessary
1 × nRC
+0
ACT
0
0
1
1
0
0
0
0
0
F
0
⎯
1 × nRC
+ 1, 2
D, D
1
0
0
0
0
0
0
0
0
F
0
⎯
1 × nRC
+ 3, 4
/D, /D 1
1
1
1
0
0
0
0
0
F
0
⎯
0
00110011
0
⎯
0
0
1
0
0
1
1
0
0
0
0
0
0
0
…
Repeat pattern nRC + 1,..., 4 until nRC + nRCD − 1, truncate if necessary
1 × nRC
+ nRCD
RD
…
Repeat pattern nRC + 1,..., 4 until nRC +nRAS − 1, truncate if necessary
1 × nRC
+ nRAS
PRE
0
0
1
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
…
Repeat pattern nRC + 1,..., 4 until 2 × nRC − 1, truncate if necessary
1
2 × nRC
Repeat Sub-Loop 0, use BA= 1 instead
2
4 × nRC
Repeat Sub-Loop 0, use BA= 2 instead
3
6 × nRC
Repeat Sub-Loop 0, use BA= 3 instead
4
8 × nRC
Repeat Sub-Loop 0, use BA= 4 instead
5
10 × nRC Repeat Sub-Loop 0, use BA= 5 instead
6
12 × nRC Repeat Sub-Loop 0, use BA= 6 instead
7
14 × nRC Repeat Sub-Loop 0, use BA= 7 instead
F
F
DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise MID-LEVEL.
Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Data Sheet E1772E40 (Ver. 4.0)
13
EDJ2104BDBG, EDJ2108BDBG
Table 8: IDD2N and IDD3N Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
0
/RAS /CAS /WE
ODT
A11
BA*3 -Am
A10
A7
-A9
A3
-A6
A0
-A2
0
D
1
0
0
0
0
0
0
0
0
0
0
1
D
1
0
0
0
0
0
0
0
0
0
0
2
/D
1
1
1
1
0
0
0
0
0
F
0
1
1
1
1
0
0
0
0
0
F
0
3
/D
4 to 7
Repeat Sub-Loop 0, use BA= 1 instead
8 to 11
Repeat Sub-Loop 0, use BA= 2 instead
3
12 to 15
Repeat Sub-Loop 0, use BA= 3 instead
4
16 to 19
Repeat Sub-Loop 0, use BA= 4 instead
5
20 to 23
Repeat Sub-Loop 0, use BA= 5 instead
6
24 to 27
Repeat Sub-Loop 0, use BA= 6 instead
7
28 to 31
Repeat Sub-Loop 0, use BA= 7 instead
1
Toggling Static H 2
Notes: 1.
2.
3.
4.
Command /CS
Data*2
DM must be driven low all the time. DQS, /DQS are MID-LEVEL.
DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Table 9: IDD2NT and IDDQ2NT Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
0
/RAS /CAS /WE
ODT
A11
BA*3 -Am
A10
A7
-A9
A3
-A6
A0
-A2
0
D
1
0
0
0
0
0
0
0
0
0
0
1
D
1
0
0
0
0
0
0
0
0
0
0
2
/D
1
1
1
1
0
0
0
0
0
F
0
1
1
1
1
0
0
0
0
0
F
0
3
/D
4 to 7
Repeat Sub-Loop 0, but ODT = 0 and BA= 1
8 to 11
Repeat Sub-Loop 0, but ODT = 1 and BA= 2
3
12 to 15
Repeat Sub-Loop 0, but ODT = 1 and BA= 3
4
16 to 19
Repeat Sub-Loop 0, but ODT = 0 and BA= 4
5
20 to 23
Repeat Sub-Loop 0, but ODT = 0 and BA= 5
6
24 to 27
Repeat Sub-Loop 0, but ODT = 1 and BA= 6
7
28 to 31
Repeat Sub-Loop 0, but ODT = 1 and BA= 7
1
Toggling Static H 2
Notes: 1.
2.
3.
4.
Command /CS
DM must be driven low all the time. DQS, /DQS are MID-LEVEL.
DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Data Sheet E1772E40 (Ver. 4.0)
14
Data*2
EDJ2104BDBG, EDJ2108BDBG
Table 10: IDD4R and IDDQ4R Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
0
Toggling Static H 1
Notes: 1.
2.
3.
4.
Command /CS
/RAS /CAS /WE
ODT
A11
BA*3 -Am
A7
A10 -A9
A3
-A6
A0
-A2
Data*2
0
RD
0
1
0
1
0
0
0
0
0
0
0
00000000
1
D
1
0
0
0
0
0
0
0
0
0
0
⎯
2,3
/D, /D 1
1
1
1
0
0
0
0
0
0
0
⎯
4
RD
0
1
0
1
0
0
0
0
0
F
0
00110011
5
D
1
0
0
0
0
0
0
0
0
F
0
⎯
6,7
/D, /D 1
1
1
1
0
0
0
0
0
F
0
⎯
8 to 15
Repeat Sub-Loop 0, but BA= 1
2
16 to 23
Repeat Sub-Loop 0, but BA= 2
3
24 to 31
Repeat Sub-Loop 0, but BA= 3
4
32 to 39
Repeat Sub-Loop 0, but BA= 4
5
40 to 47
Repeat Sub-Loop 0, but BA= 5
6
48 to 55
Repeat Sub-Loop 0, but BA= 6
7
56 to 63
Repeat Sub-Loop 0, but BA= 7
DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise MID-LEVEL.
Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Data Sheet E1772E40 (Ver. 4.0)
15
EDJ2104BDBG, EDJ2108BDBG
Table 11: IDD4W Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
0
Toggling Static H 1
Notes: 1.
2.
3.
4.
Command /CS
/RAS /CAS /WE
ODT
A11
BA*3 -Am
A7
A10 -A9
A3
-A6
A0
-A2
Data*2
0
WR
0
1
0
0
1
0
0
0
0
0
0
00000000
1
D
1
0
0
0
1
0
0
0
0
0
0
⎯
2,3
/D, /D 1
1
1
1
1
0
0
0
0
0
0
⎯
4
WR
0
1
0
0
1
0
0
0
0
F
0
00110011
5
D
1
0
0
0
1
0
0
0
0
F
0
⎯
6,7
/D, /D 1
1
1
1
1
0
0
0
0
F
0
⎯
8 to 15
Repeat Sub-Loop 0, but BA= 1
2
16 to 23
Repeat Sub-Loop 0, but BA= 2
3
24 to 31
Repeat Sub-Loop 0, but BA= 3
4
32 to 39
Repeat Sub-Loop 0, but BA= 4
5
40 to 47
Repeat Sub-Loop 0, but BA= 5
6
48 to 55
Repeat Sub-Loop 0, but BA= 6
7
56 to 63
Repeat Sub-Loop 0, but BA= 7
DM must be driven low all the time. DQS, /DQS are used according to write commands, otherwise MID-LEVEL.
Burst sequence driven on each DQ signal by write command. Outside burst operation, DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Table 12: IDD5B Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
Command /CS
/RAS /CAS /WE
ODT
A11
BA*3 -Am
A7
A10 -A9
A3
-A6
A0
-A2
Data*2
REF
0
0
0
1
0
0
0
0
0
0
0
⎯
1, 2
D
1
0
0
0
0
0
0
0
0
0
0
⎯
3,4
/D, /D 1
1
1
1
0
0
0
0
0
F
0
⎯
5 to 8
Repeat cycles 1...4, but BA= 1
0
0
Toggling Static H
1
2
Notes: 1.
2.
3.
4.
9 to 12
Repeat cycles 1...4, but BA= 2
13 to 16
Repeat cycles 1...4, but BA= 3
17 to 20
Repeat cycles 1...4, but BA= 4
21 to 24
Repeat cycles 1...4, but BA= 5
25 to 28
Repeat cycles 1...4, but BA= 6
29 to 32
Repeat cycles 1...4, but BA= 7
33 to
Repeat Sub-Loop 1, until nRFC − 1. Truncate, if necessary.
nRFC − 1
DM must be driven low all the time. DQS, /DQS are MID-LEVEL.
DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Data Sheet E1772E40 (Ver. 4.0)
16
EDJ2104BDBG, EDJ2108BDBG
Table 13: IDD7 Measurement-Loop Pattern
CK,
/CK
CKE
Sub
Cycle
-Loop number
0
/CS
/RAS /CAS /WE ODT
A11
BA*3 -Am
A7 A3 A0
A10 -A9 -A6 -A2 Data*2
0
ACT
0
0
1
1
0
0
0
0
0
0
0
⎯
1
RDA
0
1
0
1
0
0
0
1
0
0
0
00000000
2
D
1
0
0
0
0
0
0
0
0
0
0
⎯
…
Repeat above D Command until nRRD − 1
nRRD
ACT
0
0
1
1
0
1
0
0
0
F
0
⎯
nRRD + 1
RDA
0
1
0
1
0
1
0
1
0
F
0
00110011
nRRD + 2
D
1
0
0
0
0
1
0
0
0
F
0
⎯
…
Repeat above D Command until 2 × nRRD − 1
2
2 × nRRD
Repeat Sub-Loop 0, but BA= 2
3
3 × nRRD
0
0
0
F
0
⎯
0
⎯
1
Repeat Sub-Loop 1, but BA= 3
D
1
0
0
0
0
3
4
4 × nRRD
5
nFAW
Repeat Sub-Loop 0, but BA= 4
6
nFAW
+ nRRD
Repeat Sub-Loop 1, but BA= 5
7
nFAW
Repeat Sub-Loop 0, but BA= 6
+ 2 × nRRD
8
nFAW
Repeat Sub-Loop 1, but BA= 7
+ 3 × nRRD
9
D
1
0
0
0
0
7
0
0
0
F
nFAW
+ 4 × nRRD Assert and repeat above D Command until 2 × nFAW − 1, if necessary
Toggling Static H 10
ACT
0
0
1
1
0
0
0
0
0
F
0
⎯
2 × nFAW
+1
RDA
0
1
0
1
0
0
0
1
0
F
0
00110011
D
1
0
0
0
0
0
0
0
0
F
0
⎯
2 × nFAW
+ nRRD
11
Assert and repeat above D Command until nFAW − 1, if necessary
2 × nFAW
+0
2 × nFAW
+2
Notes: 1.
2.
3.
4.
Command
Repeat above D Command until 2 × nFAW + nRRD − 1
ACT
0
0
1
1
0
1
0
0
0
0
0
⎯
2 × nFAW
RDA
+ nRRD + 1
0
1
0
1
0
1
0
1
0
0
0
00000000
1
0
0
0
0
1
0
0
2 × nFAW D
+ nRRD + 2 Repeat above D Command until 2 × nFAW + 2 × nRRD − 1
0
0
0
⎯
0
⎯
0
⎯
12
2 × nFAW
Repeat Sub-Loop 10, but BA= 2
+2 × nRRD
13
2 × nFAW
Repeat Sub-Loop 11, but BA= 3
+ 3 × nRRD
14
1
0
0
0
0
3
0
0
0
0
2 × nFAW D
+ 4 × nRRD Assert and repeat above D Command until 3 × nFAW − 1, if necessary
15
3 × nFAW
Repeat Sub-Loop 10, but BA= 4
16
3 × nFAW
+nRRD
Repeat Sub-Loop 11, but BA= 5
17
3 × nFAW
Repeat Sub-Loop 10, but BA= 6
+ 2 × nRRD
18
3 × nFAW
Repeat Sub-Loop 11, but BA= 7
+ 3 × nRRD
19
1
0
0
0
0
7
0
0
0
0
3 × nFAW D
+ 4 × nRRD Assert and repeat above D Command until 4 × nFAW − 1, if necessary
DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise MID-LEVEL.
Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Data Sheet E1772E40 (Ver. 4.0)
17
EDJ2104BDBG, EDJ2108BDBG
2.
2.1
Electrical Specifications
DC Characteristics
Table 14: DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Data rate
×4
×8
Symbol
(Mbps)
max
max
Unit
IDD0
800
1066
1333
1600
1866
40
45
50
55
60
40
45
50
55
60
mA
IDD1
800
1066
1333
1600
1866
50
55
60
65
70
50
55
60
65
70
mA
IDD2P1
800
1066
1333
1600
1866
16
18
18
20
22
16
18
18
20
22
mA
Fast PD Exit
IDD2P0
800
1066
1333
1600
1866
12
12
12
12
12
12
12
12
12
12
mA
Slow PD Exit
IDD2N
800
1066
1333
1600
1866
25
27
30
33
35
25
27
30
33
35
mA
IDD2NT
800
1066
1333
1600
1866
25
27
30
33
35
25
27
30
33
35
mA
IDD2Q
800
1066
1333
1600
1866
25
27
30
33
35
25
27
30
33
35
mA
Active power-down current
IDD3P
(Always fast exit)
800
1066
1333
1600
1866
25
27
27
30
30
25
27
27
30
30
mA
Active standby current
800
1066
1333
1600
1866
35
37
40
43
45
35
37
40
43
45
mA
Parameter
Operating current
(ACT-PRE)
Operating current
(ACT-RD-PRE)
Precharge power-down
standby current
Precharge standby current
Precharge standby
ODT current
Precharge quiet standby
current
IDD3N
Data Sheet E1772E40 (Ver. 4.0)
18
Notes
EDJ2104BDBG, EDJ2108BDBG
Table 14: DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)(cont’d)
Data rate
×4
×8
Symbol
(Mbps)
max
max
Unit
IDD4R
800
1066
1333
1600
1866
75
85
95
105
110
80
90
100
110
120
mA
IDD4W
800
1066
1333
1600
1866
80
90
100
110
120
85
95
105
115
125
mA
IDD5B
800
1066
1333
1600
1866
170
170
170
175
175
170
170
170
175
175
mA
All bank interleave read
current
IDD7
800
1066
1333
1600
1866
135
145
165
175
185
140
150
170
180
190
mA
RESET low current
IDD8
12
12
mA
Parameter
Operating current
(Burst read operating)
Operating current
(Burst write operating)
Burst refresh current
Notes
Table 15: Self-Refresh Current (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
max
Unit
Self-refresh current
normal temperature range
IDD6
12
mA
Self-refresh current
extended temperature range
IDD6ET
18
mA
Auto self-refresh current
(Optional)
IDD6TC
⎯
mA
Data Sheet E1772E40 (Ver. 4.0)
19
Notes
EDJ2104BDBG, EDJ2108BDBG
2.2
Pin Capacitance
Table 16: Pin Capacitance [DDR3-800 to 1600] (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V)
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Min
Max
Min
Max
Min
Max
Min
Max
Units Notes
Input/output capacitance CIO
1.4
3.0
1.4
2.7
1.4
2.5
1.4
2.3
pF
1, 2
Input capacitance,
CK and /CK
0.8
1.6
0.8
1.6
0.8
1.4
0.8
1.4
pF
2
Input capacitance delta,
CDCK
CK and /CK
0
0.15
0
0.15
0
0.15
0
0.15
pF
2, 3
Input/output capacitance
delta,
CDDQS
DQS and /DQS
0
0.2
0
0.2
0
0.15
0
0.15
pF
2, 4
Input capacitance,
(control, address,
command, input-only
pins)
0.75
1.4
0.75
1.35
0.75
1.3
0.75
1.3
pF
2, 5
Input capacitance delta,
(All control input-only
CDI_CTRL −0.5
pins)
0.3
−0.5
0.3
−0.4
0.2
−0.4
0.2
pF
2, 6, 7
Input capacitance delta,
CDI_ADD_
−0.5
(All addres/command
CMD
input-only pins)
0.5
−0.5
0.5
−0.4
0.4
−0.4
0.4
pF
2, 8, 9
Input/output capacitance
delta, DQ,DM, DQS,
CDIO
/DQS, TDQS, /TDQS
−0.5
0.3
−0.5
0.3
−0.5
0.3
−0.5
0.3
pF
2, 10
Input/output capacitance
CZQ
of ZQ pin
⎯
3
⎯
3
⎯
3
⎯
3
pF
2, 11
Parameter
Symbol
CCK
CI
Table 17: Pin Capacitance [DDR3-1866] (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V)
DDR3-1866
Parameter
Symbol
Min
Max
Units
Notes
Input/output capacitance
CIO
1.4
2.2
pF
1, 2
Input capacitance,
CK and /CK
CCK
0.8
1.3
pF
2
Input capacitance delta, CK and /CK CDCK
0
0.15
pF
2, 3
Input/output capacitance delta,
DQS and /DQS
CDDQS
0
0.15
pF
2, 4
Input capacitance,
(control, address, command, inputonly pins)
CI
0.75
1.2
pF
2, 5
Input capacitance delta,
(All control input-only pins)
CDI_CTRL
−0.4
0.2
pF
2, 6, 7
Input capacitance delta, (All
addres/command input-only pins)
CDI_ADD_CMD
−0.4
0.4
pF
2, 8, 9
Input/output capacitance delta,
CDIO
DQ,DM, DQS, /DQS, TDQS, /TDQS
−0.5
0.3
pF
2, 10
Input/output capacitance of ZQ pin
⎯
3
pF
2, 11
Notes: 1.
2.
3.
4.
CZQ
Although the DM, TDQS and /TDQS pins have different functions, the loading matches DQ and DQS.
VDD, VDDQ, VSS, VSSQ applied and all other pins floating (except the pin under test, CKE, /RESET and ODT as
necessary). VDD = VDDQ = 1.5V, VBIAS=VDD/2 and ondie termination off.
Absolute value of CCK-C/CK.
Absolute value of CIO(DQS)-CIO(/DQS).
Data Sheet E1772E40 (Ver. 4.0)
20
EDJ2104BDBG, EDJ2108BDBG
5.
6.
7.
8.
9.
10.
11.
CI applies to ODT, /CS, CKE, A0-A15, BA0-BA2, /RAS, /CAS and /WE.
CDI_CTRL applies to ODT, /CS and CKE.
CDI_CTRL = CI(CTRL) − 0.5 × (CI(CK)+CI(/CK)).
CDI_ADD_CMD applies to A0-A15, BA0-BA2, /RAS, /CAS and /WE.
CDI_ADD_CMD = CI(ADD_CMD) − 0.5 × (CI(CK)+CI(/CK)).
CDIO=CIO(DQ,DM) − 0.5 × (CIO(DQS)+CIO(/DQS)).
Maximum external load capacitance on ZQ pin: 5pF.
Data Sheet E1772E40 (Ver. 4.0)
21
EDJ2104BDBG, EDJ2108BDBG
2.3
Standard Speed Bins
Table 18: DDR3-800 Speed Bins
Speed Bin
DDR3-800E
CL-tRCD-tRP
6-6-6
Symbol
min
max
Unit
Notes
tAA
/CAS write latency
15
20
ns
10
tRCD
15
⎯
ns
10
tRP
15
⎯
ns
10
tRC
52.5
⎯
ns
10
37.5
9 × tREFI
ns
9
tCK(avg) @CL=5
CWL = 5
3.0
3.3
ns
1, 2, 3, 11
tCK(avg) @CL=6
CWL = 5
2.5
3.3
ns
1, 2, 3, 11
tRAS
Supported CL settings
Supported CWL settings
5, 6
nCK
5
nCK
Table 19: DDR3-1066 Speed Bins
Speed Bin
DDR3-1066F
CL-tRCD-tRP
7-7-7
Symbol
/CAS write latency
tAA
min
max
Unit
Notes
13.125
20
ns
10
tRCD
13.125
⎯
ns
10
tRP
13.125
⎯
ns
10
tRC
50.625
⎯
ns
10
37.5
9 × tREFI
ns
9
CWL = 5
3.0
3.3
ns
1, 2, 3, 4, 5, 11
CWL = 6
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
ns
1, 2, 3, 5
CWL = 6
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
ns
1, 2, 3, 4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
ns
1, 2, 3
tRAS
tCK(avg) @CL=5
tCK(avg) @CL=6
tCK(avg) @CL=7
tCK(avg) @CL=8
Supported CL settings
Supported CWL settings
Data Sheet E1772E40 (Ver. 4.0)
22
5, 6, 7, 8
nCK
5, 6
nCK
EDJ2104BDBG, EDJ2108BDBG
Table 20: DDR3-1333 Speed Bins
Speed Bin
DDR3-1333H
CL-tRCD-tRP
9-9-9
Symbol
min
max
Unit
Notes
tAA
13.5
(13.125)
20
ns
10
tRCD
13.5
(13.125)
⎯
ns
10
tRP
13.5
(13.125)
⎯
ns
10
tRC
49.5
(49.125)
⎯
ns
10
tRAS
36
9 × tREFI
ns
9
CWL = 5
3.0
3.3
ns
1, 2, 3, 4, 6, 11
CWL = 6, 7
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
ns
1, 2, 3, 6
CWL = 6
Reserved
Reserved
ns
4
CWL = 7
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
ns
1, 2, 3, 4, 6
CWL = 7
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
ns
1, 2, 3, 6
CWL = 7
Reserved
Reserved
ns
4
CWL = 5, 6
Reserved
Reserved
ns
4
CWL= 7
1.5
< 1.875
ns
1, 2, 3, 4
CWL = 5, 6
Reserved
Reserved
ns
4
CWL= 7
1.5
< 1.875
ns
1, 2, 3
tCK(avg) @CL=5
tCK(avg) @CL=6
tCK(avg) @CL=7
tCK(avg) @CL=8
tCK(avg) @CL=9
tCK(avg) @CL=10
/CAS write latency
Supported CL settings
Supported CWL settings
Data Sheet E1772E40 (Ver. 4.0)
23
5, 6, 7, 8, 9, 10
nCK
5, 6, 7
nCK
EDJ2104BDBG, EDJ2108BDBG
Table 21: DDR3-1600 Speed Bins
Speed Bin
DDR3-1600K
CL-tRCD-tRP
Symbol
11-11-11
min
max
Unit
Notes
tAA
13.75
(13.125)
20
ns
10
tRCD
13.75
(13.125)
⎯
ns
10
tRP
13.75
(13.125)
⎯
ns
10
tRC
48.75
(48.125)
⎯
ns
10
tRAS
35
9 × tREFI
ns
9
tCK(avg) @CL=5
tCK(avg) @CL=6
tCK(avg) @CL=7
tCK(avg) @CL=8
tCK(avg) @CL=9
tCK(avg) @CL=10
tCK(avg) @CL=11
/CAS write latency
CWL = 5
3.0
3.3
ns
1, 2, 3, 4, 7, 11
CWL = 6, 7, 8
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
ns
1, 2, 3, 7
CWL = 6
Reserved
Reserved
ns
4
CWL = 7, 8
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
ns
1, 2, 3, 4, 7
CWL = 7
Reserved
Reserved
ns
4
CWL = 8
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
ns
1, 2, 3, 7
CWL = 7
Reserved
Reserved
ns
4
CWL = 8
Reserved
Reserved
ns
4
CWL = 5, 6
Reserved
Reserved
ns
4
CWL= 7
1.5
< 1.875
ns
1, 2, 3, 4, 7
CWL= 8
Reserved
Reserved
ns
4
CWL = 5, 6
Reserved
Reserved
ns
4
CWL= 7
1.5
< 1.875
ns
1, 2, 3, 7
CWL= 8
Reserved
Reserved
ns
4
CWL = 5, 6, 7
Reserved
Reserved
ns
4
CWL= 8
1.25
< 1.5
ns
1, 2, 3
Supported CL settings
Supported CWL settings
Data Sheet E1772E40 (Ver. 4.0)
24
5, 6, 7, 8, 9, 10, 11
nCK
5, 6, 7, 8
nCK
EDJ2104BDBG, EDJ2108BDBG
Table 22: DDR3-1866 Speed Bins
Speed Bin
DDR3-1866M
CL-tRCD-tRP
Symbol
13-13-13
/CAS write latency
min
max
Unit
tAA
13.91
20.0
ns
tRCD
13.91
⎯
ns
tRP
13.91
⎯
ns
tRC
47.91
⎯
ns
tRAS
34.0
9 × tREFI
ns
tCK(avg) @CL=5
tCK(avg) @CL=6
tCK(avg) @CL=7
tCK(avg) @CL=8
tCK(avg) @CL=9
tCK(avg) @CL=10
tCK(avg) @CL=11
tCK(avg) @CL=12
tCK(avg) @CL=13
Notes
9
CWL = 5
3.0
3.3
ns
1, 2, 3, 8
CWL = 6, 7, 8, 9
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
ns
1, 2, 3, 8
CWL = 6
Reserved
Reserved
ns
4
CWL = 7, 8, 9
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
2.5
ns
1, 2, 3, 8
CWL = 7, 8, 9
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
ns
4
CWL = 6
1.875
2.5
ns
1, 2, 3, 8
CWL = 7
Reserved
Reserved
ns
4
CWL = 8, 9
Reserved
Reserved
ns
4
CWL = 5, 6
Reserved
Reserved
ns
4
CWL= 7
1.5
1.875
ns
1, 2, 3, 8
CWL= 8
Reserved
Reserved
ns
4
CWL= 9
Reserved
Reserved
ns
4
CWL = 5, 6
Reserved
Reserved
ns
4
CWL= 7
1.5
1.875
ns
1, 2, 3, 8
CWL= 8
Reserved
Reserved
ns
4
CWL = 5, 6, 7
Reserved
Reserved
ns
4
CWL= 8
1.25
1.5
ns
1, 2, 3, 8
CWL= 9
Reserved
Reserved
ns
4
CWL = 5, 6, 7, 8
Reserved
Reserved
ns
4
CWL= 9
Reserved
Reserved
ns
4
CWL = 5, 6, 7, 8
Reserved
Reserved
ns
4
CWL= 9
1.07
1.25
ns
4
5, 6, 7, 8, 9, 10, 11, 13
nCK
1, 2, 3, 8
5, 6, 7, 8, 9
nCK
Supported CL settings
Supported CWL settings
Data Sheet E1772E40 (Ver. 4.0)
25
EDJ2104BDBG, EDJ2108BDBG
Notes: 1.
The CL setting and CWL setting result in tCK(avg)min and tCK(avg)max requirements. When making a selection of
tCK(avg), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting.
2. tCK(avg)min limits: Since /CAS latency is not purely analog - data and strobe output are synchronized by the DLL - all
possible intermediate frequencies may not be guaranteed. An application should use the next smaller JEDEC standard
tCK(avg) value (3.0, 2.5, 1.875, 1.5, or 1.25ns) when calculating CL(nCK) = tAA(ns) / tCK(avg)(ns), rounding up to the
next ‘Supported CL’.
3. tCK(avg)max limits: Calculate tCK(avg) + tAA(max)/CL selected and round the resulting tCK(avg) down to the next valid
speed bin (i.e. 3.3ns or 2.5ns or 1.875ns or 1.25ns). This result is tCK(avg)max corresponding to CL selected.
4. Reserved’ settings are not allowed. User must program a different value.
5. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1066
Speed Bins which are not subject to production tests but verified by design/characterization.
6. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1333
Speed Bins which is not subject to production tests but verified by design/characterization.
7. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1600
Speed Bins which is not subject to production tests but verified by design/characterization.
8. Any DDR3-1866 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1866
Speed Bins which is not subject to production tests but verified by design/characterization.
9. tREFI depends on operating case temperature (TC).
10. For devices supporting optional down binning to CL = 7 and CL = 9, tAA/tRCD/tRP(min) must be 13.125 ns or lower. SPD
settings must be programmed to match.
11. DDR3-800 AC timing apply if DRAM operates at lower than 800 MT/s data rate.
Data Sheet E1772E40 (Ver. 4.0)
26
EDJ2104BDBG, EDJ2108BDBG
3.
3.1
Package Drawing
78-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
7.50 ± 0.10
0.20 S B
10.60 ± 0.10
INDEX MARK
0.20 S A
0.20 S
1.20 max.
S
0.35 ± 0.05
0.10 S
0.8
A
INDEX MARK
1.6
6.4
φ0.15 M S A B
9.6
78-φ0.45 ± 0.05
B
0.8
ECA-TS2-0306-01
Data Sheet E1772E40 (Ver. 4.0)
27
EDJ2104BDBG, EDJ2108BDBG
4.
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the 2G bits DDR3 SDRAM.
Type of Surface Mount Device
EDJ2104BDBG, EDJ2108BDBG: 78-ball FBGA < Lead free (Sn-Ag-Cu) >
Data Sheet E1772E40 (Ver. 4.0)
28
EDJ2104BDBG, EDJ2108BDBG
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Data Sheet E1772E40 (Ver. 4.0)
29
EDJ2104BDBG, EDJ2108BDBG
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Be aware that this product is for use in typical electronic equipment for general-purpose applications.
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, this product is not intended for use in the product in aerospace, aeronautics, nuclear power,
combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other
such application in which especially high quality and reliability is demanded or where its failure or
malfunction may directly threaten human life or cause risk of bodily injury. Customers are instructed to
contact Elpida Memory's sales office before using this product for such applications.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
Usage in environments with special characteristics as listed below was not considered in the design.
Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in
environments with the special characteristics listed below.
Example:
1) Usage in liquids, including water, oils, chemicals and organic solvents.
2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.
3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 ,
SO 2 , and NO x .
4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.
5) Usage in places where dew forms.
6) Usage in environments with mechanical vibration, impact, or stress.
7) Usage near heating elements, igniters, or flammable items.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E1007
Data Sheet E1772E40 (Ver. 4.0)
30