NST489AMT1, NSVT489AMT1G High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications Features http://onsemi.com 30 VOLTS, 3.0 AMPS NPN TRANSISTOR AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring TSOP−6 CASE 318G STYLE 6 Unique Site and Control Change Requirements Pb−Free Packages are Available* COLLECTOR 1, 2, 5, 6 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V IC 2.0 A ICM 3.0 A Symbol Max Unit 535 4.3 mW mW/C Rating Collector Current − Continuous Collector Current − Peak 3 BASE 4 EMITTER DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25C Derate above 25C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Thermal Resistance, Junction−to−Lead #1 RqJL (Note 1) RqJL (Note 2) Total Device Dissipation (Single Pulse < 10 s) PDsingle (Notes 2 and 3) 1.75 TJ, Tstg −55 to +150 Junction and Storage Temperature Range C/W 234 1.180 9.4 W mW/C C/W 106 110 50 C/W C/W W C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 with 1 oz and 3.9 mm2 of copper area. 2. FR−4 with 1 oz and 645 mm2 of copper area. 3. Refer to Figure 8. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 N2 M G G 1 N2 M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NST489AMT1 TSSOP−6 3,000 / Tape & Reel NST489AMT1G TSSOP−6 (Pb−Free) 3,000 / Tape & Reel NSVT489AMT1G TSSOP−6 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST489AMT1/D NST489AMT1, NSVT489AMT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 30 − − V Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 50 − − V Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 30 V, IE = 0) ICBO − − 0.1 mA Collector−Emitter Cutoff Current (VCES = 30 V) ICES − − 0.1 mA Emitter Cutoff Current (VEB = 4.0 V) IEBO − − 0.1 mA hFE 300 300 200 − 500 − − 900 − VCE(sat) − − − 0.10 0.06 0.05 0.200 0.125 0.075 V Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) VBE(sat) − − 1.1 V Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) − − 1.1 V fT 200 300 − MHz Cobo − − 15 pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (IC = 1.0 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) DC Current Gain (Note 4) Collector −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (f = 1.0 MHz) 4. Pulsed Condition: Pulse Width 300 msec, Duty Cycle 2%. 1.0 0.9 IC = 2 A 0.8 0.7 0.8 0.7 IC = 1 A 0.6 VCE(sat) (V) VCE(sat) (V) 1.0 0.9 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 Ic/Ib = 10 0.2 0.1 IC = 100 mA 0.001 0.01 Ib (A) 0.1 0 0.2 0.001 700 600 1 2 Figure 2. VCE (sat) versus Ic 1.2 VCE = 5 V +125C VCE = 5 V 1.0 +25C hFE VBE(on) (V) 500 400 300 0.1 Ic (A) Figure 1. VCE (sat) versus Ib 800 0.01 −55C 0.8 0.6 0.4 −55C +25C +125C 200 0.2 100 0 0.001 0.01 Ic (A) 0.1 1 0 2 0.001 Figure 3. hFE versus Ic 0.01 Ic (A) 0.1 Figure 4. VBE(on) versus Ic http://onsemi.com 2 1 2 NST489AMT1, NSVT489AMT1G 1.2 VBE (sat) (V) 1.0 IC COLLECTOR CURRENT (A) 10.00 Ic/Ib = 10 0.8 Ic/Ib = 100 0.6 0.4 0.2 0 0.001 0.01 1 0.1 2 Ic (A) 3.0 1.00 1 ms 10 ms 100 ms 0.10 1s SINGLE PULSE Tamb = 25C 0.01 0.10 1.00 10.00 VCE(sat) (V) Figure 5. VBE(sat) versus Ic dc 100.00 Figure 6. Safe Operating Area fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 1 10 100 1000 IC, COLLECTOR CURRENT (mA) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 3 10 100 1000 NST489AMT1, NSVT489AMT1G PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE U D H 6 5 ÉÉ E1 1 NOTE 5 2 L2 4 GAUGE PLANE E 3 L b DETAIL Z e 0.05 M A C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. SEATING PLANE DIM A A1 b c D E E1 e L L2 M c A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10 − STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NST489AMT1/D