Vishay BA782-G Band switching diode Datasheet

BA782-G, BA783-G
www.vishay.com
Vishay Semiconductors
Band Switching Diodes
FEATURES
• Silicon epitaxial planar diode switches
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-123
DESCRIPTION
Weight: approx. 9.4 mg
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BA782-G
BA783-G
ORDERING CODE
TYPE MARKING
REMARKS
R4
Tape and reel
R5
Tape and reel
BA782-G3-08 or BA782-G3-18
BA782-HG3-08 or BA782-HG3-18
BA783-G3-08 or BA783-G3-18
BA783-HG3-08 or BA783-HG3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Reverse voltage
VR
35
V
Forward continuous current
IF
100
mA
SYMBOL
VALUE
UNIT
Tj
125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Top
- 55 to + 125
°C
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Junction temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
IR
50
nA
f = 1 MHz, VR = 1 V
CD1
1.5
pF
BA782-G
CD2
1.25
pF
BA783-G
CD2
1.2
pF
BA782-G
rf1
0.7

Diode capacitance
TEST CONDITION
f = 1 MHz, VR = 3 V
f = (50 to 1000) MHz, IF = 3 mA
Dynamic forward resistance
f = (50 to 1000) MHz, IF = 10 mA
Series inductance across case
PART
SYMBOL
MIN.
TYP.
BA783-G
rf1
1.2

BA782-G
rf2
0.5

BA783-G
rf2
0.9
LS
2.5

nH
Rev. 1.1, 14-May-14
Document Number: 85240
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA782-G, BA783-G
www.vishay.com
Vishay Semiconductors
rf - Dynamic Forward Resistance (Ω)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
CD - Diode Capacitance (pF)
2.0
1.8
Tj = 25 °C
f = 1 MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18798
1
10
10
BA782-G, BA783-G
1 kHz
Tamb = 25 °C
BA783-G
100 MHz
1
BA782-G
100 MHz
0.1
1
100
10
100
IF - Forward Current (mA)
VR - Reverse Voltage (V)
Fig. 1 - Diode Capacitance
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.1, 14-May-14
Document Number: 85240
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000
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