Seme LAB D2004UK Metal gate rf silicon fet Datasheet

TetraFET
D2004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
PUSH–PULL
A
C
B
(2 pls)
K
3
2
1
E
D
5
4
G (4 pls)
F
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H
J
M
I
N
• SUITABLE FOR BROAD BAND APPLICATIONS
DK
PIN 1
SOURCE (COMMON) PIN 2
DRAIN 1
• VERY LOW Crss
PIN 3
DRAIN 2
GATE 2
• SIMPLE BIAS CIRCUITS
PIN 5
GATE 1
PIN 4
• LOW NOISE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
58W
65V
±20V
2A
–65 to 150°C
200°C
* Per Side
Semelab plc.
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E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 01/01
D2004UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
Drain–Source
V
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
0.4
mA
VGS = 20V
VDS = 0
1
mA
VGS(th) Gate Threshold Voltage *
ID = 10mA
VDS = VGS
7
V
gfs
VDS = 10V
ID = 0.4A
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance *
65
1
0.36
S
10
dB
40
%
20:1
—
TOTAL DEVICE
GPS
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
h
VDS = 28V
IDQ = 0.4A
f = 1GHz
PER SIDE
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
* Pulse Test:
PO = 10W
VDS = 0V
VGS = –5V f = 1MHz
24
pF
VDS = 28V
VGS = 0
f = 1MHz
12
pF
VDS = 28V
VGS = 0
f = 1MHz
1
pF
Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Max. 3.0°C / W
Prelim. 01/01
D2004UK
3RXW
:
I
,GT
9GV
*+]
$
9
3LQ:
*DLQ
3RXW
G%
:
I
,GT
9GV
*+]
$
9
3LQ:
3RXW
*DLQ
'UDLQ(IILFLHQF\
3RXW
'UDLQ(IILFLHQF\
Figure 1
Figure 2
Output Power and Gain vs. Input Power
Output Power and Efficiency vs. Input Power.
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
ZS
ZL
1000MHZ
2.4 - j2.5
5 + j1
W
W
N.B.
Impedances measured terminal to terminal.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
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Prelim. 01/01
D2004UK
1 0
+ 2 8 V
1 K 2
G a te -B ia s
1 n F
1 0 0 n F
1 n F
1 K 2
L 1
T 4
T 5
1 0 0 n F
T 1 2
T 1 3
L 2
T 1 1
T 6
T 1
1 -8 p F
8 .2 p F
1 0 p F
2 .2 p F
T 1 4
3 6 p F
T 2
1 -8 p F
1 0 0 u F
1 K 2
D 2 0 0 4 U K
3 6 p F T 3
L 3
3 .6 p F
T 1 9
1 -8 p F
3 6 p F
3 6 p F T 7
T 8
T 9
T 1 0
D 2 0 0 4 U K
T 1 5
T 1 6
T 1 7
T 1 8
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass
All microstrip lines W = 2.7mm
T1
T2, T19
T3, T7
T4, T8
T5, T9
T6, T10
T11,T15
T12,T16
T13,T17
T14,T18
23 mm
50mm 50 OHM UT 34 semi-rigid coax
6mm
8mm
15mm
9mm
8mm
7mm
11mm
5mm
L1,L2
L3
6 turns of 24swg enamelled copper wire, 3mm i.d.
1.5 turns of 24swg enamelled copper wire on Siemens B62152-a7x 2 hole core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 01/01
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