JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6LPlastic-Encapsulate Transistors CJ2045 SOT-23-6L Dual 40V complementary transistors FEATURES z z z 40V complementary device High hFE Mounting cost and area can be cut in half MARKING EQUIVALENT CIRCUIT PIN1 Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25℃) Symbol Value Parameter Unit NPN PNP VCBO Collector-Base Voltage 40 -40 V VCEX Collector-Emitter Voltage 40 -40 V VCEO Collector-Emitter Voltage 30 -30 V VEBO Emitter-Base Voltage 7 -7 V 1.5 -1.5 A 5 -5 A IC Collector Current- Continuous ICM Collector Current- Peak PC Collector Power Dissipation 350 350 mW Thermal Resistance from Junction to Ambient 357 357 ℃/W RθJA TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 D,May,2015 ELECTRICAL CHARACTERISTICS Tr1 NPN (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=10mA, IB=0 30 V Collector-emitter breakdown voltage V(BR)CEX IC=1μA, VBE(off)=-0.5V 40 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 7 V Collector cut-off current ICBO VCB=32V, IE=0 20 nA Collector cut-off current ICER VCE=16V, R≤1kΩ 20 nA Emitter cut-off current IEBO VEB=6V, IC=0 20 nA DC current gain hFE* VCE=2V, IC=100mA Collector-emitter saturation voltage 180 500 VCE(sat)* 0.375 V 1.2 V IC=750mA, IB=15mA Base-emitter saturation voltage VBE(sat)* Tr2 PNP (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Uni t Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA, IB=0 -30 V Collector-emitter breakdown voltage V(BR)CEX IC=-1μA, VBE(off)=0.5V -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -7 V Collector cut-off current ICBO VCB=-32V, IE=0 -20 nA Collector cut-off current ICER VCE=-16V, R≤1kΩ -20 nA Emitter cut-off current IEBO VEB=-6V, IC=0 -20 nA DC current gain hFE* VCE=-2V, IC=-100mA Collector-emitter saturation voltage VCE(sat)* 180 500 -0.375 V -1.2 V IC=-750mA, IB=-15mA Base-emitter saturation voltage VBE(sat)* *Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. www.cj-elec.com 2 D,May,2015 Typical Characteristics NPN Transistor hFE Static Characteristic 10000 300 COMMON EMITTER Ta=25℃ 0.80mA (mA) 250 COMMON EMITTER VCE=2V 0.72mA hFE 0.64mA IC 200 0.48mA 150 0.40mA 100 0.32mA 50 0.16mA 1000 DC CURRENT GAIN 0.56mA COLLECTOR CURRENT IC —— 0.24mA Ta=100℃ Ta=25℃ 100 IB=0.08mA 0 10 0 1 2 4 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 5 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 800 600 Ta=25℃ 400 Ta=100 ℃ 1 10 IC Ta=100 ℃ Ta=25℃ IC —— IC 1 10 100 COLLECTOR CURREMT (mA) fT VBE —— IC 1000 1500 (mA) IC 500 COMMON EMITTER VCE=2V COMMON EMITTER VCE=10V Ta=25℃ (MHz) (mA) 100 1000 1500 100 COLLECTOR CURREMT fT 100 TRANSITION FREQUENCY 10 T =2 5℃ a T= a 10 0℃ IC COLLECTOR CURRENT —— (mA) 10 200 0.1 1 0.1 0 200 400 600 800 1000 100 10 1.53 1200 10 BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib 1000 —— VCB/VEB PC 400 —— IC (mA) Ta COLLECTOR POWER DISSIPATION PC (mW) 350 Ta=25 ℃ (pF) 100 COLLECTOR CURRENT f=1MHz IE=0/IC=0 CT IC β=50 1000 CAPACITANCE 1000 1500 100 COLLECTOR CURRENT β=50 1500 1000 10 VCE (V) 100 Cib Cob 10 300 250 200 150 100 50 1 0.1 0 1 REVERSE VOLTAGE www.cj-elec.com 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 3 125 100 Ta 150 (℃ ) D,May,2015 Typical Characteristics PNP Transistor hFE Static Characteristic 10000 -300 COMMON EMITTER Ta=25℃ (mA) COMMON EMITTER VCE= -2V -0.80mA -250 IC —— COLLECTOR CURRENT -0.56mA -150 -0.48mA -100 -0.32mA -50 -0.16mA 1000 DC CURRENT GAIN -0.64mA -200 IC hFE -0.72mA -0.40mA -0.24mA Ta=100℃ Ta=25℃ 100 IB=-0.08mA 10 -0 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VBEsat —— -1200 -5 -1 COLLECTOR CURRENT IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -800 -600 Ta=25℃ -400 Ta=100 ℃ -1 IC IC Ta=100 ℃ Ta=25℃ -1 -10 -100 COLLECTOR CURREMT (mA) fT VBE —— IC -1000 -1500 (mA) IC 500 COMMON EMITTER VCE=-2V COMMON EMITTER VCE=-10V Ta=25℃ (MHz) (mA) —— IC fT -100 TRANSITION FREQUENCY -10 T =2 5℃ a T= a 10 0℃ IC COLLECTOR CURRENT -100 -1000 -1500 -100 -10 COLLECTOR CURREMT -1 -0.1 -0 -200 -400 -600 -800 -1000 100 10 -1.25 -1200 -10 BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib 1000 —— COLLECTOR CURRENT VCB/VEB —— -100 IC (mA) Ta COLLECTOR POWER DISSIPATION PC (mW) 350 Ta=25 ℃ (pF) PC 400 f=1MHz IE=0/IC=0 CT —— (mA) -10 -200 -0.1 CAPACITANCE IC β=50 -1000 -1000 -1500 -1000 VCEsat -1500 β=50 -1000 -1500 -100 -10 VCE (V) 100 Cib Cob 10 300 250 200 150 100 50 1 -0.1 0 -1 REVERSE VOLTAGE www.cj-elec.com -10 V 0 -30 25 50 75 AMBIENT TEMPERATURE (V) 4 125 100 Ta 150 (℃ ) D,May,2015 SOT-23-6L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-6L Suggested Pad Layout www.cj-elec.com 5 D,May,2015 SOT-23-6L Tape and Reel www.cj-elec.com 6 D,May,2015