CHENMKO ENTERPRISE CO.,LTD CHT4401N1PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE FBPT-923 * Small flat package. ( FBPT-923 ) * Low current (Max.=600mA). * Suitable for high packing density. 0.5±0.05 1.0±0.05 * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. 0.37(REF.) 1.0±0.05 CONSTRUCTION 0.25(REF.) * NPN Switching Transistor 0.05±0.04 0.68±0.05 0.42±0.05 3 CIRCUIT 0.3±0.05 1 0.26±0.05 2 FBPT-923 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current DC − 600 mA Ptot total po wer dissipation − 100 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 2006-07 RATING CHARACTERISTIC CURVES ( CHT4401N1PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 200 °C/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 60 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 1 50 mA V CE = 2 V;note 2 IC = 500 mA 20 40 80 100 − − − 300 40 − − − 400 mV 750 mV 750 − 950 1200 mV mV VCEsat VBEsat collector-emitter saturation voltage IC = 150 mA; IB = 1 5 mA base-emitter saturation voltage IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 5 0 mA IC = 500 mA; IB = 5 0 mA Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz − 6.5 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 140KHz − 30 pF fT transition frequency IC = 20 mA; VCE = 10 V; f = 100 MHz 250 − MHz Switching times (between 10% and 90% levels); − 35 ns − 15 ns rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = 150 mA; IBon = 15 mA; IBoff = −1 5 mA RATING CHARACTERISTIC CURVES ( CHT4401N1PT ) V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0.4 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) Collector-Emitter Saturation Voltage vs Collector Current 10 1 0.1 f = 1 MHz 16 12 C 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT4401N1PT ) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Switching Times vs Collector Current 400 Ic 320 TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off 80 tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000