Chenmko CHT4401N1PT Npn switching transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT4401N1PT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts
CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
FBPT-923
* Small flat package. ( FBPT-923 )
* Low current (Max.=600mA).
* Suitable for high packing density.
0.5±0.05
1.0±0.05
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
0.37(REF.)
1.0±0.05
CONSTRUCTION
0.25(REF.)
* NPN Switching Transistor
0.05±0.04
0.68±0.05
0.42±0.05
3
CIRCUIT
0.3±0.05
1
0.26±0.05
2
FBPT-923
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current DC
−
600
mA
Ptot
total po wer dissipation
−
100
mW
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−55
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 1
2006-07
RATING CHARACTERISTIC CURVES ( CHT4401N1PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
200
°C/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 60 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
−
50
nA
hFE
DC current gain
VCE = 1 V; note 1
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 1 50 mA
V CE = 2 V;note 2
IC = 500 mA
20
40
80
100
−
−
−
300
40
−
−
−
400
mV
750
mV
750
−
950
1200
mV
mV
VCEsat
VBEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 1 5 mA
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 5 0 mA
IC = 500 mA; IB = 5 0 mA
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz −
6.5
pF
Ce
emitter capacitance
IC = ic = 0; VBE = 500 mV;
f = 140KHz
−
30
pF
fT
transition frequency
IC = 20 mA; VCE = 10 V;
f = 100 MHz
250
−
MHz
Switching times (between 10% and 90% levels);
−
35
ns
−
15
ns
rise time
−
20
ns
toff
turn-off time
−
250
ns
ts
storage time
−
200
ns
tf
fall time
−
60
ns
ton
turn-on time
td
delay time
tr
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
ICon = 150 mA; IBon = 15 mA;
IBoff = −1 5 mA
RATING CHARACTERISTIC CURVES ( CHT4401N1PT )
V CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
500
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
V BESAT - BASE-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
0.4
β = 10
0.3
125 °C
0.2
25 °C
0.1
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation
Voltage vs Collector Current
10
1
0.1
f = 1 MHz
16
12
C
8
C ob
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE (° C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
RATING CHARACTERISTIC CURVES ( CHT4401N1PT )
Turn On and Turn Off Times
vs Collector Current
400
I B1 = I B2 =
Switching Times
vs Collector Current
400
Ic
320
TIME (nS)
V cc = 25 V
240
160
240
ts
160
tr
t off
80
tf
80
t on
td
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
10
320
V cc = 25 V
0
10
Ic
I B1 = I B2 =
10
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
1000
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