DMN53D0LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25°C N-Channel MOSFET Low On-Resistance 2.0Ω @ VGS = 10V 360mA Low Input Capacitance 250mA Fast Switching Speed V(BR)DSS NEW PRODUCT 50V Features 3.0Ω @ VGS = 5V ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching Qualified to AEC-Q101 Standards for High Reliability Mechanical Data performance, making it ideal for high efficiency power management applications. Case: SOT323 Applications DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Battery Operated Systems and Solid-State Relays Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Terminal Connections: See Diagram Memories, Transistors, etc Weight: 0.006 grams (approximate) Drain SOT323 D Gate ESD PROTECTED Gate Protection Diode S G Top View Pin Configuration Top View Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN53D0LW-7 DMN53D0LW-13 Notes: Case SOT323 SOT323 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information MM5 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Shanghai A/T Site Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN53D0LW Document number: DS36579 Rev. 2 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 5 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D November 2013 © Diodes Incorporated DMN53D0LW Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT Characteristic Symbol Value Units Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V mA Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 360 250 Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C ID 250 200 mA IDM 700 mA Pulsed Drain Current (10µs pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Value 320 420 395 301 Units -55 to 150 °C PD RθJA Operating and Storage Temperature Range TJ, TSTG mW °C/W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 50 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ±10 µA VGS = ±12V, VDS = 0V VGS(TH) 0.8 1.5 V VDS = VGS, ID = 100µA -3.4 mV/°C 2.0 3.0 ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient (Note 8) Static Drain-Source On-Resistance VGS(TH) TJ RDS (ON) Ω — VGS = 10V, ID = 270mA VGS = 5V, ID = 200mA Forward Transconductance gFS 80 mS VDS = 10V, ID = 200mA Diode Forward Voltage VSD — 0.75 1.2 V VGS = 0V, IS = 115mA Input Capacitance Ciss 45.8 Output Capacitance Coss 5.3 pF Reverse Transfer Capacitance Crss 3.9 VDS = 25V, VGS = 0V f = 1.0MHz Total Gate Charge VGS = 10V Qg 1.2 Total Gate Charge VGS = 4.5V Qg 0.6 Gate-Source Charge Qgs 0.2 nC VGS = 10V, VDS = 10V, ID = 250mA Gate-Drain Charge nS VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA DYNAMIC CHARACTERISTICS (Note 8) Qgd 0.1 Turn-On Delay Time tD(on) 2.7 Turn-On Rise Time tr 2.5 Turn-Off Delay Time tD(off) 18.9 tf 11.0 Turn-Off Fall Time Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN53D0LW Document number: DS36579 Rev. 2 - 2 2 of 5 www.diodes.com November 2013 © Diodes Incorporated DMN53D0LW 1.5 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 5V 0.9 VGS = 4.5V VGS = 2.5V VGS = 3.5V 0.6 0.3 0.6 TA = 150°C 0.4 TA = 85°C TA = 125°C 0.2 VGS = 2V TA = 25°C VGS = 1.8V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 1 0.9 VGS = 5V 0.8 VGS = 10V 0.7 0.6 0.5 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.4 2.0 VGS = 10V ID = 500mA 1.6 VGS = 5V ID = 300mA 1.2 0.8 0.4 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 1.2 1 VGS = 3V VGS = 10V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN53D0LW Document number: DS36579 Rev. 2 - 2 3 of 5 www.diodes.com TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 2.5 VGS = 4.5V 2 TA = 150°C T A = 125°C 1.5 T A = 85°C 1 T A = 25°C 0.5 0 TA = -55°C 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 2 1.8 1.6 1.4 VGS = 5V ID = 300mA 1.2 1 0.8 VGS = 10V ID = 500mA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2013 © Diodes Incorporated DMN53D0LW 1.0 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.4 ID = 1mA 1.2 ID = 250µA 1.0 0.8 TA = 150°C 0.6 TA = 125°C 0.4 TA = 25°C TA = 85°C 0.2 TA = -55°C 0.6 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 100 Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 2.0 10 Coss Crss 8 6 VDS = 10V ID = 250mA 4 2 f = 1MHz 1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 0 0 0.3 0.6 0.9 1.2 1.5 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A B C G H K J DMN53D0LW Document number: DS36579 Rev. 2 - 2 M D L 4 of 5 www.diodes.com SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° All Dimensions in mm November 2013 © Diodes Incorporated DMN53D0LW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT Y Z Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 C X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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