ISC BD316 Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD316
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC = -8A
·Collector-Emitter Saturation Voltage: VCE(sat)= -1.0 V(Max)@ IC = -8A
·Complement to Type BD315
APPLICATIONS
·Designed for high quality amplifiers operating up to 100 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-16
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
B
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
UNIT
0.875
℃/W
isc Website:www.iscsemi.cn
1
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD316
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=-200mA; IB=0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -8A; IB= -0.8A
-1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -8A; IB= -0.8A
-1.8
V
VBE(on)
Base-Emitter On Voltage
IC= -8A; VCE= -2V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -80V; IB= 0
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-1.0
mA
hFE-1
DC Current Gain
IC= -8A; VCE= -4V
25
hFE-2
DC Current Gain
IC= -10A; VCE= -4V
15
Current Gain-Bandwidth Product
IC= -1A; VCE= -20V
1
fT
CONDITIONS
B
MIN
-80
B
B
B
isc Website:www.iscsemi.cn
2
MAX
UNIT
V
MHz
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