isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD316 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -8A ·Collector-Emitter Saturation Voltage: VCE(sat)= -1.0 V(Max)@ IC = -8A ·Complement to Type BD315 APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD316 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-200mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A; IB= -0.8A -1.8 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -2V -1.5 V ICBO Collector Cutoff Current VCB= -80V; IB= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -8A; VCE= -4V 25 hFE-2 DC Current Gain IC= -10A; VCE= -4V 15 Current Gain-Bandwidth Product IC= -1A; VCE= -20V 1 fT CONDITIONS B MIN -80 B B B isc Website：www.iscsemi.cn 2 MAX UNIT V MHz