BSS44 ® SILICON PNP TRANSISTOR ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) - 65 V V CEO Collector-Emitter Voltage (I B = 0) - 60 V V EBO Emitter-Base Voltage (I C = 0) -6 V Collector Current -5 A 5 0.87 W W IC P tot T stg Tj Parameter Total Dissipation at T case ≤ 25 o C T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature November 1998 -65 to 200 o C 200 o C 1/4 BSS44 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE =0) Test Conditions Min. Typ. V CE = -60 V Max. Unit -0.5 µA V (BR)CBO ∗ Collector-base Breakdown Voltage (I E = 0) I C = -1 mA -65 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = -50 mA -60 V Emitter-base Voltage (I C = 0) I E =.- 1 mA -6 V Collector-Emitter Saturation Voltage I C = -0.5 A IC = - 5 A I B = -50 mA I B = -0.5 A -0.1 -0.4 -1 V V Base-Emitter Saturation Voltage I C = -0.5 A IC = - 5 A I B = -50 mA I B = -0.5 A -0.8 -1.1 -1.6 V V DC Current Gain I C = -0.5 A I C = -2 A I C = -5 A V CE = -2 V V CE = -2 V V CE = -2 V Transition Frequency I C = -0.5 A V CE = -5 V C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V t on Turn-on Time t off Turn-off Time IC = -0.5 A V CC = -20 V I B1 = -IB2 = -50 mA V EBO ∗ V CE(sat) ∗ V BE(sat) ∗ h FE ∗ f T∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 30 40 70 45 80 MHz 100 pF 0.065 µs 0.45 µs BSS44 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 BSS44 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4