ISC BUT92 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUT92
DESCRIPTION
n
SGS-THOMSON PREFERRED SALESTYPE
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NPN TRANSISTOR hFE > 10 AT IC =35A
n
HIGH EFFICIENCY SWITCHING
n
VERY LOW SATURATION VOLTAGE
n
RECTANGULAR SAFE OPERATING AREA
n
WIDE ACCIDENTAL OVERLOAD AREA
APPLICATIONS
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UNINTERRUPTABLE POWER SUPPLY
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SWITCH MODE POWER SUPPLIES
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MOTOR CONTROL
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
350
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
50
A
ICM
Collector Current-Peak
75
A
IB
Base Current-Continuous
10
A
IBM
Base Current-peak
15
A
PC
Collector Power Dissipation
@TC=25℃
250
W
Tj
Junction Temperature
150
℃
-65~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.7
℃/W
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isc & iscsemi is registered trademark
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUT92
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
250
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 35A; IB= 3.5A
IC= 12.5A; IB= 0.625A; Tj= 100℃
1.2
1.9
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=35A; IB= 3.5A
IC=35A; IB= 3.5A; Tj= 100℃
1.5
1.5
V
ICER
Collector Cutoff Current
VCE= 250V; RBE= 10Ω
VCE= 250V; TC=100℃
0.2
2
mA
ICEV
Collector Cutoff Current
VCE= 250V; VBE= -1.5V
VCE=250V;TC=100℃
1
4
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0
mA
VCE(3s)
Collector-Emitter
Dynamic Voltage
VCC = 200V IB1 = 5.25 A
RC = 5.7 Tj = 100 oC
6
V
VCE(5s)
Collector-Emitter
Dynamic Voltage
VCC = 200V IB1 = 5.25 A
RC = 5.7 Tj = 100 oC
3
V
Rated of Rise on-state
Collector Current
VCC = 200V IB1 = 5.25 A RC = 0
tp = 3s Tj = 100 oC
diC/dt
CONDITIONS
MIN
MAX
125
UNIT
A/s
Switching Times; Resistive Load
ts
Storage Time
tf
Fall Time
tc
Crossover Time
VCEW
Maximum Collector
Emitter Voltage
without Snubber
VCC = 200 V VClamp = 250 V
IC = 35 A IB1 = 3.5 A
VBB = -5 V LC = 0.28 mH
RB2 = 0.7 Tj = 100 oC
VCC = 50 V ICWoff = 52 A
VBB = -5 V IB1 = 3.5 A
LC = 48 H RB2 = 0.7 
Tj = 125 oC
250
3
μs
0.4
μs
0.7
μs
V
* Pulsed : Pulse duration = 300 s, duty cycle = 2%
isc website：www.iscsemi.com
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isc & iscsemi is registered trademark