MOTOROLA MC33286 Automotive dual Datasheet

Freescale Semiconductor, Inc.
Order Number: MC33286/D
Rev. 5.4, 06/2001
MOTOROLA
Semiconductor Technical Data
MC33286
Advance Information
AUTOMOTIVE DUAL HIGH
SIDE DRIVER
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Automotive Dual
High Side Driver
SEMICONDUCTOR
TECHNICAL DATA
DW SUFFIX
SO20WB Package
This device is a dual high side power switch dedicated for automoive
applications. In comparison with mechanical relays, this device offers higher
reliability as well as protection and diagnostic features.
The device consists of two independent 35mΩ Rdson switches in a
surface mount package. It can be directly interfaced with a microcontroller
for control and diagnostic functions. The device is fully protected against
overcurrents, short-circuits and incorporates an overtemperature shutdown.
It can be directly and continuously supplied by the battery and offers a very
low quiescent current in standby mode.
CASE 751D-05
PIN ASSIGNMENT
• Designed for Automotive Applications
• Junction Temperature Range from -40°C to 150°C
• Operating Voltage Range from 8V to 40V
• Maximum Breakdown Voltage greater than 40V
• Surface Mount Package
• 35mΩ Rdson at 25°C
• Overtemperature Protection with Hysteresis
• Under Voltage Shutdown
• Reverse Battery protected
• Open Load Detection in On-State
• Diagnostic Output
• ESD Protection 2kV
• Current Limitation at 30A
• Loss of ground protected
• Standby Current less than 10µA at Vbat = 14V
Vbat
1
20
Vbat
Vbat
2
19
Vbat
Out1
3
18
Out2
Out1
4
17
Out2
Vbat
5
16
Vbat
Vbat
6
15
Vbat
NC
7
14
NC
In 1
8
13
In 2
St1
9
12
St2
10
11
Gnd
Vbatc
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
PC33286DW
TA=-40° to +125°C
SO20
Simplified Application Schematic
5V
5V
5V
V BAT
+
VBATC
-
ST1
OUT1
ST2
MCU
IN1
MC33286
21W
OUT2
IN2
21W
This document contains information on a new product. Specifications and
information herein are subject to change without notice.
TM
© Motorola, Inc., 2001. All rights reserved.
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MC33286
MAXIMUM RATINGS
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Ratings
Symbol
Value
Unit
Vbat and Vbatc Voltage : Continuous/Pulse
Vbat
-0.3 to 40
V
OUT1, OUT2 Voltage with Respect to Gnd : Continuous/
Pulse
Vout
-0.3 to 40
V
OUT1, OUT2 to Vbtap Voltage : Continuous
Vout
40
V
St1, St2 Voltage : Continuous/Pulse
Vst
-0.3 to 5.5
V
IN1, IN2 Voltage : Continuous/Pulse
Vin
-0.3 to 10
V
In1, In2, St1, St2 Current
Iin
+/-4
mA
ESD all Pins
Vesd
+/-2000
V
OUT1, OUT2 DC Output Current
Iout
6
A
OUT1, OUT2 Pulse Current (Note 1)
Ioutp
30
A
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tst
-65 to 150
°C
Rthja
70
°C/W
THERMAL RATINGS
Thermal Resistance Junction to Ambient (note 2)
NOTES : 1. During lamps inrush current. Value internally limited.
2. Device mounted with minimum pcb dimensions.
ELECTRICAL CHARACTERISTICS Tj from - 40°C to +125°C, Vbat from 8V to 16V, unless otherwise noted.Typical values reflect approximate mean
at 25°C, V bat =12V, at time of device characterization.
Characteristics
Description
Symbol
Unit
Min
Operating Voltage
Vbat
Typ
8
Conditions
Max
40
V
Vuv
7
8
V
Drain-Source on Resistance
Rdson
25
35
mΩ
V bat > 9V ; T j = 25°C
Drain-Source on Resistance
Rdson
35
50
mΩ
High Current Limitation
Ilimh
30
A
Vbat > 9V ; Tj = 150°C
VOUT > 1V
Short-Circuit Current Limitation
Iliml
10
A
VOUT < 1V, Tj = 25°C
Body Diode Forward Voltage
Vf
0.7
V
Iout = -2A, Tj = 25°C
Body Diode Forward Voltage
Vf
0.6
V
Iout = -2A, Tj = 125°C
Hot Open Load Current
Iol
400
Under Voltage Threshold
700
mA
Device in On State
Istdby
10
µA
Vbat < 14V ; Vin < 0.8V
Supply Current : One Channel On
Ion1
10
mA
In1 or In 2 in High State
Supply Current : Both Channels On
Ion2
20
mA
In1 and In 2 in High State
Low Input Voltage
Vil
1.5
V
0.7
0.9
V
20
100
µA
Vin = 3.5V
0.5
V
Ist = 1mA ; Output in Fault
Standby Current
High Input Voltage
Input Hysteresis
Vih
3.5
Vhyst
0.4
Input Current
Iih
Status Voltage
Vstatus
V
Thermal Shutdown
Tshut
Thermal Shutdown Hysteresis
T hyst
Output Maximum Positive Slew Rate
Srpout
0.05
0.2
Output Maximum Negative Slew Rate
Srnout
0.15
0.8
PWM frequency
fPWM
Turn-on Delay Time
tdon
150
°C
20
100
°C
0.5
V/µs
Load = 6Ω, Vbat =12V
Load = 6Ω, Vbat =12V
1.5
V/µs
150
Hz
150
µs
Automotive Dual High Side Driver
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In=2.5V to 10% Vout,
Vbat=12V
2
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MC33286
ELECTRICAL CHARACTERISTICS Tj from - 40°C to +125°C, Vbat from 8V to 16V, unless otherwise noted.Typical values reflect approximate mean
at 25°C, V bat =12V, at time of device characterization.
Characteristics
Description
Symbol
Min
Typ
Max
150
Turn-off Delay Time
tdoff
100
Open Load to Status Low Delay Time
TOL
10
Unit
Conditions
µs
IN = 2.5V to 90% Vout,
Vbat=12V
µs
FUNCTIONAL TRUTH TABLE
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Conditions
IN1
IN2
OUT1
OUT2
St1
St2
Normal Operation
L
H
L
H
L
L
H
H
L
H
L
H
L
L
H
H
H
H
H
H
H
H
H
H
Undervoltage
X
X
L
L
H
H
Overtemperature Channel 1
Overtemperature Channel 2
Overtemperature Channel 1/Channel 2
H
X
H
X
H
H
L
X
L
X
L
L
L
H
L
H
L
L
Open Load Channel 1
Open Load Channel 2
H
X
X
H
H
X
X
H
L
H
H
L
Overcurrent Channel 1
Overcurrent Channel 2
H
X
X
H
X
X
X
X
H
H
H
H
L = ‘Low level’ ; H = ‘High level’ ; X = ‘don’t care’
Figure 1. Application Schematic
Vbatc
Battery
V bat V bat Vbat Vbat
Vbat V bat V bat V bat
100nF
OUT2
OUT2
Load 2
Thermal
Sensor
5V
Over
Temp
Status pull-up
resistors
Charge
Pump
Status 2
10KΩ
10KΩ
IN2
Vbatc
CHANNEL 2
OUT1
OUT1
Open
Load
Input
Trigger
MCU
IN1
Load 1
Over
Current
U.V.
Lockout
Status 1
CHANNEL 1
GND
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MC33286
PIN FUNCTION DESCRIPTION
Pin No.
1, 2, 5, 6, 15, 16, 19, 20
Description
Vbat
Supply Voltage
These are the power supply pins of the device. These pins are
directly connected with the lead frame of the package and are tied to
the drain of the switching MOSFET. These pins can be directly
connected to the battery voltage. In addition to their supply functions,
these pins participate to the thermal behaviour of the device in
conducting the heat from the switching MOSFET to the printed circuit
board.
OUT1
OUTPUT Channel 1
OUT 2
OUTPUT Channel 2
Pins 3 and 4 are the output 1 terminals. Pins 17 and 18 are the output 2
terminals. They are directly connected to the source of the power
MOSFET. The Rdson is 35mΩ max per output at 25°C. Its value
increases up to 50mΩ at 150°C junction temperature.
8, 13
IN 1
INPUT Channel 1
IN 2
INPUT Channel 2
These are the device input pins, which directly control their
associated output. The thresholds are CMOS compatible. When the
input is in low state, the associated output MOSFET is off. When
input is high, the MOSFET is turned on and the load is activated.
When both inputs are low, the device is in standby mode and its
supply current is less than 1mA for Vbat up to 12V.
9, 12
St1
Status for Channel 1
St2
Status for Channel 2
These pins are the channel 1 and 2 status. Their internal structure is
an open drain with an internal clamp at 6V. An external pull up
connected to the 5V is needed. When the device is in normal
condition the status is high. If open load or overtemperature occurs
on one channel, the associated output status will be pulled low. See
Functional Truth Table.
10
Vbatc
VBAT Control
This pin is the supply voltage pin for the control portion of the device. It
has to be connected to the Vbat line and to the other Vbat pins listed above.
An internal 45V zener diode is connected between pin 10 and Gnd.
11
GND
GROUND
This is the Gnd pin of the device.
3, 4, 18, 17
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Name/Function
Automotive Dual High Side Driver
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MC33286
FUNCTIONAL DESCRIPTION
Input Trigger
General Information
The MC33286 has a special input trigger circuitry allowing
This device is a dual high side power switch dedicated for
the device to have less than 0.5µA typical standby current.
automotive applications. In comparison with mechanical
When the input level is below 1.5V, the circuit is in sleep mode
relays, this device offers higher reliability as well as protection
(see Figure 4).
and diagnostic features. It has been designed to be directly
connected to the battery voltage.
Status Output
In the future, the number of electronic switches directly
The output status is an open drain structure, active at low
connected to the battery will increase, so the MC33286
level, so an external pull-up resistor is required to read the
includes a special input trigger and architecture which allows
status information.
to have a very low standby current when the Vbat is lower than
The status indicates the open load and the over
12V.
temperature information. The output short-circuit, current
The MC33286 concept uses a dual chip approach packaged
limitation and Vbat undervoltage are not reported on the status
in a single SO20 package. This low power package can be used
because the ON resistance of the switch (35mΩ max at 25°C)
pin. But an output short-circuit to Gnd will be detected by an
guarantees a low power dissipation (less than 300mW) when
overtemperature because the total power dissipation of the
driving two 21Watts lamps. The two chips are internally connected
device will make it reach the thermal detection.
by die to die wire bonding to allow the transfer of analog and
control information between the two dice.
Open Load Function
The two chips are the Control and Power dice.
The open load detection is active during the ON phase (Hot
The Control chip uses the SMARTMOS3.5NVM
open load detection). An amplifier measures the differential volttechnology. The two channels of this control chip are totally
age between Vbat and Vout (this value is typically 400mA) at
symmetrical and independant. It drives the gate of the output
25°C.
power MOSFET and manages the analog information from the
An open load condition will create a voltage lower than 12mV
power MOSFET die to ensure power device protection.
and the open load circuitry will detect it and will pull down the staThe Power chip uses the HDTMOS3 technology. It has
tus output. If the open load condition is present before the device
one independent sources plus current sensing cells for open
turn-on, the status will be pulled down after a delay due to the rise
load detection and current limitation. In addition, a thermal
time of the output.
sensor (diode) is located in the middle of each source to
protect the MC33286 against overtemperature. The drain of
Overcurrent Function (High Current Limitation)
the Power die is connected to the battery voltage by the lead
The device incorporates a current limitation at 30 Amps
frame of the package. This lead frame has been especially
typical when outputs are loaded (Vout > 1V) . A 21 Watts lamp
developed and has eight pins connected together to the Vbat.
has a nominal current of about 2 amp and at turn on, the
MC33286 has to drive a peak current of about 12A, as the
These pins are used as the Vbat connection as well as thermal
lamp inrush current is about six times the nominal DC current.
path.
A standard current limitation set up at 30A will not being
activated during the inrush current of one lamp but will protect
Supply Voltage
the circuit against overcurrent. Figure 3 shows the overcurrent
The MC33286 can be directly connected to the Vbat line.
threshold versus temperature.
Figure 4 shows the supply voltage characteristics. The Vbatc
(Vbat of Control die, pin 10) and Vbat (Vbat of power die, pins 1,
2, 5, 6, 15, 16, 19, 20) are not internally connected, so the Vbat
Short Circuit Protection (Low Current Limitation)
During a hard short-circuit to Gnd, the power dissipation
and Vbatc have to be connected externally by the printed
would be 30A x 14V = 420 Watts if only the overcurrent
circuit board.
limitation exists. The thermal protection will be activated and
switch the device off. Nevertheless the peak power
Under Voltage
dissipation and energy is quite high.
Figure 4 also shows the supply voltage characteristic
Therefore, a short circuit protection has been
when one or two sides of the MC33286 are turned on. From
implemented and is activated when the output voltage is lower
0V to undervoltage level (7V typical), all blocks of the
than about 1V . As shown in the Figure 5, the low current
MC33286 are not totally supplied. The undervoltage threshold
limitation decreases with temperature. In the case of a short
value versus temperature is shown in Figure 2.The under
circuit, the power dissipated in the device decreases with time
voltage function allows the turn-off of the output transistor,
due to the decay of the current limitation with temperature.
because the Vbat voltage will be not enough to guarantee the
full on state of the output transistor due to an incomplete drive
Overtemperature Function
of the gate. When the Vbat is greater than the undervoltage
The overtemperature function uses a thermal sensor
threshold, the supply current increases due to the charge
located in the middle of each output power HDTMOS
pump start up and MOSFET driver activation.
transistor. The sensor is a diode connected to Vbat in the
power die. The diode forward voltage varies of -2mV/°C. So,
Reverse Battery Protection
by measuring the diode voltage the power output MOSFET
When a negative battery voltage arises, the current flows
temperature is monitored. This diode voltage information is
in a reverse direction from the source region to drain region of
transferred to the control die and compared to a reference
both of the MosFets through the body diode. The limitation is
voltage generated from the band gap reference generator.
then the temperature reached by the junction, which is linked
When the temperature reaches the overtemp threshold, the
to the thermal impedance from the junction to the ambiant.
circuit is turned off. As the input voltage is still high, the circuit
is not in wake mode but the current consumption decreases
due to the turn-off of the charge pump. The overtemperature
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FUNCTIONAL DESCRIPTION
comparator has an hysteresis which maintains the device off.
As soon as the die power temperature decreases by around
20°C the device automatically switches on again.
If the cause of the overtemperature has not been
removed, it is likely that the device will reach the
overtemperature shutdown again and will cycle off and on
until the overtemperature cause is removed. As soon as the
device switches off, due to overtemperature, the status pin is
pulled low to inform the microcontroller that an abnormal
condition has occured.
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Figure 3. High Current Limitation Versus Temperature
8
40
6
30
CURRENT (A)
VOLTAGE (V)
Figure 2. Undervoltage Threshold Versus Temperature
4
10
2
0
0
-50
0
50
100
-50
150
0
50
100
150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 4. Battery Supply Current Versus Vbat
200
Figure 5. Short Circuit Current Limitation Versus
Temperature
12
20
2 Sides ON
15
8
6
CURRENT (A)
CURRENT (mA)
10
1 Side ON
4
10
5
2
2 Sides OFF
0
0
0
10
20
30
40
-50
0
BATTERY VOLTAGE (V)
Figure 6. OpenLoad Current Threshold Versus
Temperature
50
100
TEMPERATURE (°C)
150
200
Figure 7. Ron Versus Temperature
600
1,5
RON, (NORMALIZED)
1,4
CURRENT (mA)
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20
450
300
150
1,3
1,2
1,1
1,0
0,90
0,80
0
-50
0
50
100
TEMPERATURE (°C)
150
0,70
-50
-25
0
25
50
75
100
125
TEMPERATURE (°C)
Automotive
Dual High
Side
Driver
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