ATP302 Ordering number : ENA1654A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP302 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=10mΩ (typ.) 4.5V drive • • Input capacitance Ciss=5400pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% V ±20 V --70 A --280 A Channel Temperature PD Tch Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 197 mJ --42 A Avalanche Current *2 Tc=25°C Unit --60 70 W 150 °C Note : *1 VDD=--36V, L=100μH, IAV=--42A *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP302-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP302 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 0.8 1.7 2,4 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 62712 TKIM/21710QA TKIM TC-00002247 No.A1654-1/7 ATP302 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--35A 75 RDS(on)1 ID=--35A, VGS=--10V 10 13 mΩ RDS(on)2 ID=--35A, VGS=--4.5V 13 18 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --10 μA ±10 μA --2.6 V S 5400 pF 500 pF Crss 370 pF Turn-ON Delay Time td(on) 35 ns Rise Time tr 430 ns Turn-OFF Delay Time td(off) 420 ns Fall Time tf 500 ns Total Gate Charge Qg 115 nC Gate-to-Source Charge Qgs 20 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--36V, VGS=--10V, ID=--70A Switching Time Test Circuit 0V --10V VDS=--20V, f=1MHz 25 IS=--70A, VGS=0V nC --1.0 --1.5 V Avalanche Resistance Test Circuit VDD= --36V VIN L ID= --35A RL=1.03Ω VIN D PW=10μs D.C.≤1% ≥50Ω RG VOUT ATP302 0V --10V G VDD 50Ω ATP302 P.G 50Ω S Ordering Information Device ATP302-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.A1654-2/7 ATP302 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 30 25 20 15 Tc=75°C 10 25°C --25°C 5 0 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 100 7 2 C 5° = Tc 10 7 5 --2 °C 75 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 7 --100 VDD= --36V VGS= --10V 1000 75°C 25° C Tc= -5°C °C Tc= 7 25 ° --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 IT15339 Single pulse 25 20 A --35 I D= , V A 4.5 --35 = -I D= , V GS V 0 = --1 VGS 15 10 5 0 --50 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 150 IT15341 IS -- VSD VGS=0V Single pulse 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 --1.4 IT15343 f=1MHz 7 Ciss 5 7 Ciss, Coss, Crss -- pF td(off) 5 3 tf 2 tr 100 7 5 td(on) 3 2 --0.1 --2.0 RDS(on) -- Tc IT15342 SW Time -- ID 2 --1.5 30 Source Current, IS -- A °C 25 3 --1.0 Gate-to-Source Voltage, VGS -- V --10 VDS= --10V 5 --0.5 IT15340 | yfs | -- ID 2 0 IT15338 Single pulse ID= --50A 35 0 --1.8 --2.0 5°C 25°C --0.2 --0.4 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S --20 VGS= --3.0V 0 --40 Tc= 7 0 --60 --2 5 --40 --80 C --60 --100 --25° C --80 VDS= --10V --120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A --100 --20 Switching Time, SW Time -- ns 5V --4. Drain Current, ID -- A 0V V 0. --8.0 .0V --6 --1 --120 ID -- VGS --140 Tc=25°C 25°C ID -- VDS --140 2 3 5 7 --1.0 2 3 3 2 1000 7 Coss 5 Crss 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT15344 2 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT15345 No.A1654-3/7 ATP302 VGS -- Qg --10 --7 --6 --5 --4 0 20 40 60 80 100 Total Gate Charge, Qg -- nC PD -- Tc 120 50 40 30 20 10 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15348 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 60 20 2 IT15346 70 0 Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 0 --1.0 7 5 μs n 0 Operation in this area is limited by RDS(on). 3 2 --1 1m s 10 ms 10 0m s 3 2 3 2 0μ s tio --2 ID= --70A --10 7 5 10 10 era --3 --100 7 5 PW≤10μs op Drain Current, ID -- A --8 IDP= --280A DC Gate-to-Source Voltage, VGS -- V --9 ASO 7 5 3 2 VDS= --36V ID= --70A 5 7 --100 IT15347 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No.A1654-4/7 ATP302 Taping Specification ATP302-TL-H No.A1654-5/7 ATP302 Outline Drawing ATP302-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A1654-6/7 ATP302 Note on usage : Since the ATP302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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