Seme LAB D1053 Metal gate rf silicon fet Datasheet

TetraFET
D1053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
50W – 28V – 1GHz
PUSH–PULL
B
B
A
A
D
E
C
(2 pls) 2
1
3
4 5
9 8
7 6
K
O
(2 pls)
F
G
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
DB
PIN 1
PIN 3
PIN 5
PIN 7
PIN 9
SOURCE (COMMON)
DRAIN 2
DRAIN 4
GATE 3
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
mm
1.52
1.52
45°
16.38
6.35
18.41
12.70
5.08
24.76
1.52
0.81R
0.13
2.16
1.65R
PIN 2
PIN 4
PIN 6
PIN 8
Tol.
0.13
0.13
5°
0.26
0.13
0.13
0.26
0.13
0.13
0.13
0.13
0.02
0.13
0.13
DRAIN 1
DRAIN 3
GATE 4
GATE 2
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
Inches
0.060
0.060
45°
0.645
0.250
0.725
0.500
0.200
0.975
0.060
0.032R
0.005
0.085
0.065R
Tol.
0.005
0.005
5°
0.010
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.001
0.005
0.005
• HIGH GAIN – 7.5 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
175W
70V
±20V
5A
–65 to 150°C
200°C
Prelim. 3/95
D1053UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
1
mA
1
µA
7
V
IGSS
Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th)
Gate Threshold Voltage*
ID = 10mA
VDS = VGS
gfs
Forward Transconductance*
VDS = 10V
ID = 1A
ID = 10mA
VDS = VGS
VGS(th)match
Gate Threshold Voltage
Matching Between Sides
70
1
V
mhos
0.8
0.1
V
TOTAL DEVICE
GPS
Common Source Power Gain
PO = 50W
η
Drain Efficiency
VDS = 28V
VSWR
Load Mismatch Tolerance
f = 1GHz
IDQ = 0.8A
7.5
dB
45
%
20:1
—
PER SIDE
Ciss
Input Capacitance
VDS = 0
VGS = –5V f = 1MHz
60
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
30
pF
Crss
Reverse Transfer Capacitance VDS = 28V
VGS = 0
f = 1MHz
2.5
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Max. 1.0°C / W
Prelim. 3/95
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