APM9968C N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely D 1 8 D S1 2 7 S2 S1 3 6 S2 G1 4 5 G2 Low RDS(ON) • • Reliable and Rugged TSSOP-8 TSSOP-8 Packages D Applications • G1 G2 Power Management in Notebook Computer , S1 Portable Equipment and Battery Powered Systems. • D S1 S2 S2 N-Channel MOSFET Zener Diode Protected Gate Provide Human Body Mode Electrostatic Discharge Protection to 2500 V. Ordering and Marking Information APM9968C Package Code O : TSSOP-8 Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM9968C O : APM9968C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 1 www.anpec.com.tw APM9968C Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±8 ID* Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 20 PD Maximum Power Dissipation TJ Maximum Junction Temperature V A TA=25°C 1 TA=100°C 0.4 TSTG Storage Temperature Range RθJA* Thermal Resistance – Junction to Ambient Unit W 150 °C -55 to 150 °C 80 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM9968C Typ. Max. Min. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=16V , VGS=0V VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250µA Gate Leakage Current Drain-Source On-state VGS=±8V , VDS=0V VGS=4.5V , IDS=6A 16 20 Resistance VGS=2.5V , IDS=5.2A 20 25 Diode Forward Voltage ISD=0.5A , VGS=0V 0.7 1.3 VDS=10V , IDS= 6A 19 25 VGS=4.5V , 2 IGSS RDS(ON)a VSDa 20 0.6 V 0.7 1 µA 1 V ±10 µA mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time 37 68 Tr Turn-on Rise Time VDD=10V , IDS=6A , 33 62 td(OFF) Turn-off Delay Time VGEN=4.5V , RG=6Ω 100 182 54 100 Tf 5 Turn-off Fall Time Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 nC 2 ns www.anpec.com.tw APM9968C Electrical Characteristics Cont. Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM9968C Typ. Max. Min. Ciss Input Capacitance VGS=0V 1253 Coss Output Capacitance VDS=15V 340 Crss Reverse Transfer Capacitance Frequency=1.0MHz Notes a b Unit pF 260 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 3 www.anpec.com.tw APM9968C Typical Characteristics Output Characteristics Transfer Characteristics 20 20 VGS=1.8,2,3,4,5,6,7,8,9,10V ID-Drain Current (A) ID-Drain Current (A) 16 12 VGS=1.5V 8 4 16 12 TJ=125°C 8 TJ=25°C TJ=-55°C 4 VGS=1V 0 0 2 4 6 0 0.0 8 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.022 1.6 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 0.021 0.020 VGS=2.5V 0.019 0.018 0.017 0.016 VGS=4.5V 0.015 0.014 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 0 4 8 12 16 20 ID - Drain Current (A) 4 www.anpec.com.tw APM9968C Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1.8 0.044 0.040 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) ID=6A 0.036 0.032 0.028 0.024 0.020 0.016 0.012 0.008 0 1 2 3 4 5 6 7 1.6 VGS=4.5V ID=6A 1.4 1.2 1.0 0.8 0.6 0.4 -50 8 VGS - Gate-to-Source Voltage (V) -25 0 25 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Capacitance 2500 5 Frequency=1MHz V DS =10V ID=6A 2000 4 Capacitance (pF) VGS-Gate-Source Voltage (V) 50 3 2 1500 Ciss 1000 1 500 0 0 Coss Crss 0 4 8 12 16 20 24 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM9968C Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 20 60 48 Power (W) IS-Source Current (A) 10 TJ=25°C TJ=150°C 1 36 24 12 0.1 0.0 0.4 0.8 1.2 0 0.01 1.6 0.1 VSD -Source-to-Drain Voltage (V) 1 10 100 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM ZthJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 6 www.anpec.com.tw APM9968C Packaging Information TSSOP-8 e 8 7 2x E/2 E1 ( 2) E GAUGE PLANE S 1 2 e/2 0.25 D L A2 A b Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 1 (L1) ( 3) A1 Millimeters Min. Inches Max. 1.2 0.15 1.05 0.30 3.1 0.00 0.80 0.19 2.9 Min. 0.000 0.031 0.007 0.114 0.65 BSC 6.40 BSC 4.30 0.45 0.026 BSC 0.252 BSC 4.50 0.75 0.169 0.018 8° 0.004 0.004 0.008 0° 1.0 REF 0.09 0.09 0.2 0° Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 Max. 0.047 0.006 0.041 0.012 0.122 0.177 0.030 0.039REF 12° REF 12° REF 8° 12° REF 12° REF 7 www.anpec.com.tw APM9968C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 8 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9968C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TSSOP-8 A B J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 330 ± 1 2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 2.0 ± 0.1 7.0 ± 0.1 9 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013 www.anpec.com.tw APM9968C Cover Tape Dimensions Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 10 www.anpec.com.tw