IRLML9301TRPbF HEXFET® Power MOSFET VDS -30 V VGS Max ± 20 V RDS(on) max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 64mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Symbol VDS Lower switching losses Multi-vendor compatibility results in Easier manufacturing Environmentally friendly ⇒ Increased reliability Parameter Max. Units -30 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V -3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -2.9 IDM Pulsed Drain Current -15 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 20 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol Parameter e RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) [email protected] f www.zpsemi.com Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 IRLML9301TRPbF HEXFET® Power MOSFET Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Drain-to-Source Leakage Current -30 ––– ––– ––– 0.02 ––– ––– 51 64 ––– 82 103 -1.3 ––– -2.4 ––– ––– 1 ––– ––– 150 V Conditions VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA mΩ V μA VGS = -4.5V, ID VDS = VGS, ID = -10μA VDS =-24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 RG Internal Gate Resistance ––– 12 ––– Ω gfs Qg Forward Transconductance 5.0 ––– ––– S Total Gate Charge ––– 4.8 ––– Qgs Gate-to-Source Charge ––– 1.2 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 2.5 ––– VGS = -4.5V td(on) Turn-On Delay Time ––– 9.6 ––– VDD =-15V tr Rise Time ––– 19 ––– td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 15 ––– VGS = -4.5V Ciss Input Capacitance ––– 388 ––– VGS = 0V Coss Output Capacitance ––– 93 ––– Crss Reverse Transfer Capacitance ––– 65 ––– nA d = -2.9A d VGS = -10V, ID = -3.6A VGS = -20V VGS = 20V VDS = -10V, ID =-3.6A ID = -3.6A nC ns pF VDS =-15V d d ID = -1A RG = 6.8Ω VDS = -25V ƒ = 1.0KHz Source - Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c Min. Typ. Max. Units ––– ––– -1.3 A ––– -15 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– -1.2 V trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 7.2 11 nC [email protected] www.zpsemi.com Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V d TJ = 25°C, VR = -24V, IF=-1.3A di/dt = 100A/μs d 2 of 2