ZP IRLML9301TRPBF Hexfet power mosfet Datasheet

IRLML9301TRPbF
HEXFET® Power MOSFET
VDS
-30
V
VGS Max
± 20
V
RDS(on) max
64
mΩ
103
mΩ
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
G 1
3 D
S
2
Micro3TM (SOT-23)
IRLML9301TRPbF
Application(s)
• System/Load Switch
Features and Benefits
Benefits
Features
Low RDS(on) ( ≤ 64mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Symbol
VDS
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
⇒
Increased reliability
Parameter
Max.
Units
-30
V
ID @ TA = 25°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
-3.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-2.9
IDM
Pulsed Drain Current
-15
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 20
W/°C
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
A
W
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
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f
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Typ.
Max.
–––
100
–––
99
Units
°C/W
1 of 2
IRLML9301TRPbF
HEXFET® Power MOSFET
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Drain-to-Source Leakage Current
-30
–––
–––
–––
0.02
–––
–––
51
64
–––
82
103
-1.3
–––
-2.4
–––
–––
1
–––
–––
150
V
Conditions
VGS = 0V, ID = -250μA
V/°C Reference to 25°C, ID = -1mA
mΩ
V
μA
VGS = -4.5V, ID
VDS = VGS, ID = -10μA
VDS =-24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
RG
Internal Gate Resistance
–––
12
–––
Ω
gfs
Qg
Forward Transconductance
5.0
–––
–––
S
Total Gate Charge
–––
4.8
–––
Qgs
Gate-to-Source Charge
–––
1.2
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.5
–––
VGS = -4.5V
td(on)
Turn-On Delay Time
–––
9.6
–––
VDD =-15V
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
16
–––
tf
Fall Time
–––
15
–––
VGS = -4.5V
Ciss
Input Capacitance
–––
388
–––
VGS = 0V
Coss
Output Capacitance
–––
93
–––
Crss
Reverse Transfer Capacitance
–––
65
–––
nA
d
= -2.9A d
VGS = -10V, ID = -3.6A
VGS = -20V
VGS = 20V
VDS = -10V, ID =-3.6A
ID = -3.6A
nC
ns
pF
VDS =-15V
d
d
ID = -1A
RG = 6.8Ω
VDS = -25V
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
Min. Typ. Max. Units
–––
–––
-1.3
A
–––
-15
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
14
21
ns
Qrr
Reverse Recovery Charge
–––
7.2
11
nC
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Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
d
TJ = 25°C, VR = -24V, IF=-1.3A
di/dt = 100A/μs
d
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