PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection ■ General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/ Window material ➀/Q * ➁/Q ➂/Q Package Active area size Effective active area TO-18 TO-5 TO-8 (mm) 1.1 × 1.1 2.3 × 2.3 4.6 × 4.6 (mm2) 1.0 5.2 21 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -10 to +60 -20 to +70 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. Spectral Peak response sensitivity range wavelength λ λp (nm) (nm) G1961 G1962 190 to 550 440 G1963 * Window material Q: quartz glass Photo sensitivity S (A/W) Short circuit current Isc lx Hg line 400 nm Min. 254 nm (µA) 0.04 0.12 0.03 0.1 0.23 0.75 λp Dark current ID Max. Typ. V4=10 mV (µA) (pA) 0.05 2.5 0.3 5 0.9 10 Terminal Temp. Rise time Shunt capacitance coefficient tr resistance Ct of VR=0 V Rsh VR=0 V ID VR=10 mV RL=1 kΩ TCID f=10 kHz V4=1 V (pA) (times/°C) 25 50 1.11 100 (µs) 5 10 30 NEP Min. Typ. (pF) (GΩ) (GΩ) (W/Hz1/2) 400 4 40 5.4 × 10-15 1500 2 20 7.6 × 10-15 5000 1 1 1.1 × 10-14 G1961, G1962, G1963 GaP photodiode ■Spectral response ■Photo sensitivity temperature characteristic (Typ. Ta=25 ˚C) (Typ.) +1.5 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.2 0.15 0.1 0.05 0 190 400 600 +1.0 +0.5 0 -0.5 190 800 WAVELENGTH (nm) 400 600 800 WAVELENGTH (nm) KGPDB0014EA ■Rise time vs. load resistance KGPDB0017EB ■Dark current vs. reverse voltage (Typ. Ta=25 ˚C, VR=0 V) 10 ms (Typ. Ta=25 ˚C) 1 nA G1963 1 ms 100 pA DARK CURRENT RISE TIME G1962 100 µs G1961 10 µs 10 pA G1962 1 pA 1 µs 100 ns 2 10 G1963 G1961 3 10 4 10 5 10 6 10 LOAD RESISTANCE (Ω) 100 fA 0.001 0.01 0.1 1 10 REVERSE VOLTAGE (V) KGPDB0015EA KGPDB0016EA GaP photodiode G1961, G1962, G1963 ■Short circuit current linearity ■Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 100 10 TΩ (Typ. Ta=25 ˚C, A light source fully illuminated) 10-2 RL=100 Ω OUTPUT CURRENT (A) SHUNT RESISTANCE 1 TΩ G1961 100 GΩ G1962 10 GΩ G1963 1 GΩ 10 -4 10 -6 10 -8 10 -10 10 -12 10 -14 100 MΩ 10 MΩ -20 0 +40 +20 +60 +80 DEPENDENT ON NEP 10-16 -16 -14 10 10 10-12 10-10 10-8 10-6 AMBIENT TEMPERATURE (˚C) 10-4 10-2 100 INCIDENT LIGHT LEVEL (lx) KGPDB0018EA KGPDB0008EA ■Dimensional outlines (unit: mm) ➀ G1961 ➁ G1962 4.1 ± 0.2 2.9 3.55 ± 0.2 8.1 ± 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 20 0.45 LEAD 4.7 ± 0.1 WINDOW 5.9 ± 0.1 2.4 PHOTOSENSITIVE SURFACE 9.1 ± 0.2 5.4 ± 0.2 14 WINDOW 3.0 ± 0.2 5.08 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE CONNECTED TO CASE KGPDA0005EA KGPDA0006EA GaP photodiode G1961, G1962, G1963 ➂ G1963 13.9 ± 0.2 5.0 ± 0.2 12.35 ± 0.1 1.9 PHOTOSENSITIVE SURFACE 0.45 LEAD 15 WINDOW 10.5 ± 0.1 7.5 ± 0.2 INDEX MARK ( 1.4) CONNECTED TO CASE KGPDA0007EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1007E01 Apr. 2001 DN