UNISONIC TECHNOLOGIES CO., LTD DTC144T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) 3 1 2 SOT-23 FEATURES 3 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. 1 2 SOT-323 3 EQUIVALENT CIRCUIT 2 B 1 C R1 SOT-523 *Pb-free plating product number:DTC144TL E ORDERING INFORMATION Order Number Normal Lead Free Plating DTC144T-AE3-R DTC144TL-AE3-R DTC144T-AL3-R DTC144TL-AL3-R DTC144T-AN3-R DTC144TL-AN3-R DTC144TL-AE3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING CE4T For SOT -23/SOT-323 Package C9T For SOT-523 Package ofwww.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1of 3 QW-R206-066,B DTC144T NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATING UNIT 50 V 50 V 5 V 100 mA SOT-523 150 mW Collector Power Dissipation PC SOT-23/SOT-323 200 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency * Transition frequency of the device SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE R1 fT TEST CONDITIONS IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC=5mA, IB=0.5mA VCE=5V, IC=1mA VCE=10V, IE=-5mA, f=100MHz* UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 50 50 5 TYP 100 32.9 250 47 250 MAX UNIT V V V 0.5 µA 0.5 µA 0.3 V 600 61.1 kΩ MHz 2 of 3 QW-R206-066,B DTC144T ■ NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Saturation Voltage vs. Collector Current Collector Saturation Voltage, V CE(SAT) (mV) DC Current Gain vs. Collector Current 1k DC Current Gain, hFE 500 VCE=5V 200 100 Ta=100℃ 50 25℃ 20 -40℃ 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Current, Ic (mA) 1000 500 200 100 50 Ic/IB=10 Ta=100℃ 25℃ -40℃ 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Current, Ic (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-066,B