EIC FKBP210 Fast recovery Datasheet

TH97/2478
FKBP200 - FKBP210
IATF 0060636
SGS TH07/1033
FAST RECOVERY
BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
KBP
0.59 (14.9)
0.57 (14.5)
FEATURES :
*
*
*
*
*
*
*
*
TH09/2479
High case dielectric strength of 2000 VDC
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Ideal for printed circuit board
Pb / RoHS Free
Φ3
0.448 (11.4)
0.433 (11.0)
+
AC AC
0.0307 (0.78)
0.0303 (0.77)
0.696 (17.7)
MIN.
0.150 (3.82)
0.148 (3.78)
0.151 (3.85 )
0.147 (3.75)
0.051 (1.30)
0.043 (1.10)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
FKBP FKBP FKBP FKBP FKBP FKBP FKBP
200
201
202
204
206
208
210
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 50 °C
IF(AV)
2.0
A
IFSM
35
A
Current Squared Time at t < 8.3 ms.
2
It
10
A2S
Maximum Forward Voltage drop per Diode at I F = 1.0 A
VF
1.3
V
IR
10
μA
IR(H)
500
μA
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Trr
150
250
500
ns
RθJA
30
°C/W
TJ
- 50 to + 150
°C
TSTG
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Ambient on P.C. Board with, 0.47" X 0.47" ( 12 mm. x 12 mm. ) Cu. pads.
Page 1 of 2
Rev. 03 : June 11, 2009
TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( FKBP200 - FKBP210 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
+
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25 A
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES :
1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
2.5
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
1.5
1.0
0.5
Tc = 50 °C
40
30
20
10
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
CASE TEMPERATURE, ( °C)
2
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
Pulse Width = 300 μs
2% Duty Cycle
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
4
TJ = 25 °C
10
1.0
1.0
0.1
TJ = 25 °C
0.01
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 03 : June 11, 2009
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