Micronas HAL82X High-precision programmable linear hall-effect sensor family Datasheet

Hardware
Documentation
Data Sheet
®
HAL 82x
High-Precision Programmable
Linear Hall-Effect Sensor Family
Edition Feb. 3, 2009
DSH000143_003EN
HAL82x
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391. Sensor programming
with VDD-Modulation protected by Micronas Patent
No. EP 0 953 848.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL82x
DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
1.7.
Introduction
Major Applications
Features
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability and Welding
Pin Connections and Short Descriptions
6
6
8
11
11
2.
2.1.
2.2.
2.3.
2.3.1.
Functional Description
General Function
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
13
13
17
17
17
18
18
19
20
21
22
22
22
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.6.1.
3.7.
3.8.
3.9.
3.10.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Definition of Sensitivity Error ES
Open-Circuit Detection
Power-On Operation
Overvoltage and Undervoltage Detection
Magnetic Characteristics
23
23
23
23
24
24
4.
4.1.
4.2.
4.3.
4.4.
4.5.
Application Notes
Application Circuit
Use of two HAL82x in Parallel
Temperature Compensation
Ambient Temperature
EMC and ESD
25
25
25
27
28
28
31
5.
5.1.
5.2.
5.3.
5.4.
5.5.
5.5.1.
Programming of the Sensor
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
32
6.
Data Sheet History
Micronas
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HAL82x
DATA SHEET
High-Precision Programmable Linear Hall-Effect
Sensor Family
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL82x is a new member of the Micronas family
of programmable linear Hall sensors. As an extension
to the HAL 8x5, it offers an improved temperature performance, enhanced wiring failure detection and a 14bit multiplexed analog data output. It is possible to program different sensors which are in parallel to the
same supply voltage individually.
The HAL82x is an universal magnetic field sensor with
a linear output based on the Hall effect. The IC can be
used for angle or distance measurements if combined
with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output
quiescent voltage (output voltage at B = 0 mT), and
output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage.
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
The sensor is designed for hostile industrial and
automotive applications and operates with typically
5 V supply voltage in the ambient temperature range
from −40 °C up to 150 °C. The HAL 82x is available
in the very small leaded packages TO92UT-1 and
TO92UT-2.
1.1. Major Applications
Due to the sensor’s versatile programming characteristics and low temperature drifts, the HAL82x is the
optimal system solution for applications such as:
– contactless potentiometers,
– angle sensors (like throttle position, paddle position
and EGR applications),
– distance measurements,
– magnetic field and current measurement.
The HAL82x features a temperature-compensated
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, a D/A converter
with output driver, an EEPROM memory with redundancy and lock function for the calibration data, an
EEPROM for customer serial number, a serial interface for programming the EEPROM, and protection
devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the
sensor accuracy.
1.2. Features
The HAL82x is programmable by modulating the supply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.
– open-circuit (ground and supply line break detection) with 5 kΩ pull-up and pull-down resistor, overvoltage and undervoltage detection
In addition, the temperature compensation of the Hall
IC can be fit to common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high
accuracy.
4
– high-precision linear Hall effect sensor with ratiometric output and digital signal processing
– Low output voltage drifts over temperature
– 12-bit analog output and 14-bit multiplex analog
output
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– for programming an individual sensor within several
sensors in parallel to the same supply voltage, a
selection can be done via the output pin
– temperature characteristics are programmable for
matching common magnetic materials
– programmable clamping function
– programming through a modulation of the supply
voltage
– operates from −40 °C up to 150 °C ambient temperature
– operates from 4.5 V up to 5.5 V supply voltage in
specification and functions up to 8.5 V
– operates with static magnetic fields and dynamic
magnetic fields up to 1 kHz
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HAL82x
DATA SHEET
– overvoltage and reverse-voltage protection at all
pins
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
1.6. Solderability and Welding
Solderability
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
1.3. Marking Code
The HAL82x has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
Temperature Range
A
K
HAL824
824A
824K
HAL825
825A
825K
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.7. Pin Connections and Short Descriptions
1.4. Operating Junction Temperature Range (TJ)
Pin
No.
Pin Name
Type
Short Description
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
1
VDD
IN
Supply Voltage and
Programming Pin
A: TJ = −40 °C to +170 °C
K: TJ = −40 °C to +140 °C
2
GND
3
OUT
Ground
OUT
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.4.
on page 24.
1
Push Pull Output
and Selection Pin
VDD
1.5. Hall Sensor Package Codes
HALXXXPA-T
OUT
3
Temperature Range: A and K
Package: UT for TO92UT-1/-2
Type: 824 or 825
2
GND
Fig. 1–1: Pin configuration
Example: HAL825UT-K
→ Type:
825
→ Package:
TO92UT
→ Temperature Range: TJ = −40 °C to +140 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
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HAL82x
DATA SHEET
2. Functional Description
analog output is switched off during the communication. Several sensors in parallel to the same supply
and ground line can be programmed individually. The
selection of each sensor is done via its output pin.
The HAL82x is a monolithic integrated circuit which
provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior).
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric
behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP
are explained in Section 2.2. on page 8.
The open-circuit detection provides a defined output
voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant and nonredundant EEPROM cells. The non-redundant
EEPROM cells are only used to store production information inside the sensor. In addition, the sensor IC is
equipped with devices for overvoltage and reversevoltage protection at all pins.
The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset.
VDD (V)
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply
voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a
command, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
HAL
82x
VDD
8
VOUT (V)
2.1. General Function
7
6
5
VDD
digital
OUT
analog
GND
Fig. 2–1: Programming with VDD modulation
VDD
Internally
stabilized
Supply and
Protection
Devices
Switched
Hall Plate
Temperature
Dependent
Bias
A/D
Converter
Open-circuit,
Overvoltage,
Undervoltage
Detection
Oscillator
Digital
Signal
Processing
D/A
Converter
Analog
Output
50 Ω
Protection
Devices
50 Ω
OUT
EEPROM Memory
Supply
Level
Detection
Digital
Output
Lock Control
Open-circuit
Detection
GND
Fig. 2–2: HAL82x block diagram
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HAL82x
DATA SHEET
Digital Output
14 bit
Digital Signal Processing
A/D
Converter
TC
TCSQ
5 bit
3 bit
Digital
Filter
Mode Register
Filter
Range
2 bit
1 bit
Multiplier
Sensitivity
14 bit
Adder
Limiter
D/A
Converter
VOQ
Min-Out
Max-Out
Lock
Micronas
11 bit
8 bit
9 bit
1 bit
Register
Other: 5 bit
TC Range Select 2 bit
EEPROM Memory
Lock
Control
Fig. 2–3: Details of EEPROM and Digital Signal Processing
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HAL82x
DATA SHEET
2.2. Digital Signal Processing and EEPROM
The DSP is the main part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2–3.
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity:
name of the parameter
The EEPROM registers consist of four groups:
Group 1 contains the registers for the adaption of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC,
TCSQ and TC-Range for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW,
and CLAMP-HIGH. The output characteristic of the
sensor is defined by these 4 parameters.
– The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT.
converter offset compensation, and several other special settings.
An external magnetic field generates a Hall voltage
on the Hall plate. The ADC converts the amplified
positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the
package) to a digital value. The digital signal is filtered in the internal low-pass filter and manipulated
according to the settings stored in the EEPROM. The
digital value after signal processing is readable in the
D/A-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating
range of the A/D converter is from −30 mT...+30 mT
up to −100 mT...+100 mT.
During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent
output voltage and limited according to the clamping
voltage. The result is converted to an analog signal
and stabilized by a push-pull output transistor stage.
The D/A-READOUT at any given magnetic field
depends on the programmed magnetic field range, the
low-pass filter, TC values and CLAMP-LOW and
CLAMP-HIGH. The D/A-READOUT range is min. 0
and max. 16383.
– The parameter Sensitivity defines the magnetic sensitivity:
Note: During application design, it should be taken
into consideration that the maximum and minimum D/A-READOUT should not saturate in the
operational range of the specific application.
ΔV OUT
Sensitivity = ----------------ΔB
– The output voltage can be calculated as:
Range
The RANGE bits are bit 2 and 3 of the MODE register;
they define the magnetic field range of the A/D converter.
VOUT ∼ Sensitivity × B + V OQ
The output voltage range can be clamped by setting
the registers CLAMP-LOW and CLAMP-HIGH in order
to enable failure detection (such as short-circuits to
VDD or GND and open connections).
Magnetic Field Range
RANGE
−30 mT...30 mT
0
−60 mT...60 mT
1
Group 3 contains the general purpose register GP. The
GP Register can be used to store customer information, like a serial number after manufacturing. Micronas will use this GP REGISTER to store informations
like, Lot number, wafer number, x and y position of the
die on the wafer, etc. This information can be readout
by the customer and stored in it’s on data base or it
can stay in the sensor as is.
−80 mT...80 mT
2
−100 mT...100 mT
3
Group 4 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production. These registers are used for oscillator frequency trimming, A/D
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HAL82x
DATA SHEET
Filter
The FILTER bit is bit number 4 of the MODE register; it
defines the −3 dB frequency of the digital low pass filter.
−3 dB Frequency
FILTER
500 Hz
0
1 kHz
1
Note: Please contact Micronas for further information
about Multiplex Analog Output Mode.
In Burn-In Mode, the signal path of the sensors DSP is
stimulated internally without applied magnetic field. In
this mode, the sensor provides a “saw tooth” shape
output signal. Shape and frequency of the saw tooth
signal depends on the programming of the sensor.
This mode can be used for Burn-In test in the customers production line.
TC Register
Bit Time
The BITTIME bit is bit number 5 of the MODE register;
It defines the protocol bit time for the communication
between the sensor and the programmer board.
Bit Time
BITTIME
1:64 (Typ. 1.75 ms)
1
1:128 (Typ. 3.5 ms)
0
Output Format
The OUTPUTMODE bits are the bits number 6 to 7 of
the MODE register; They define the different output
modes.
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can
be matched to the magnet and the sensor assembly.
As a result, the output voltage characteristic can be
fixed over the full temperature range. The sensor can
compensate for linear temperature coefficients ranging
from about −3100 ppm/K up to 1000 ppm/K and quadratic coefficients from about −7 ppm/K² to 2 ppm/K².
The full TC range is separated in the following four
ranges:
TC-Range [ppm/k]
GROUP
Output Format
OUTPUTMODE
−3100 to −1800
0
Analog Output (12 bit)
0
−1750 to −550
2
Internal Burn-In Mode
2
−500 to +450 (default value)
1
Multiplex Analog Output
(external trigger)
−
+450 to +1000
3
In Analog Output mode, the sensor provides an ratiometric 12-bit analog output voltage between 0 V and
5 V.
TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example: 0 ppm/k
requires TC-Range = 1, TC = 15 and TCSQ = 1.
In Multiplex Analog Output mode, the sensor transmits
the LSN and MSN of the output value separately. This
enables the sensor to transmit a 14-bit signal. In external trigger mode the ECU can switch the output of the
sensor between LSN and MSN by changing current
flow direction through sensor output. In case the output is pulled up by a 10 kΩ resistor the sensor sends
the MSN. If the output is pulled down the sensor will
send the LSN. Maximum refresh rate is about 500 Hz
(2 ms). Three pins are sufficient.
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HAL82x
DATA SHEET
Sensitivity
GP Register
The SENSITIVITY register contains the parameter for
the multiplier in the DSP. The Sensitivity is programmable between −4 and 4. For VDD = 5 V, the register
can be changed in steps of 0.00049.
This register can be used to store some information,
like production date or customer serial number. Micronas will store production Lot number, wafer number
and x,y coordinates in three blocks of this registers.
The total register contains of four blocks with a length
of 13 bit each. The customer can read out this information and store it in his own production data base for reference or he can change them and store own production information.
For all calculations, the digital value from the magnetic
field of the D/A converter is used. This digital information is readable from the D/A-READOUT register.
ΔV out × 16384
SENSITIVITY = --------------------------------------------------------2 ⋅ ΔDA-Readout ⋅ VDD
Note: To enable programming of the GP register bit 0
of the MODE register has to be set to 1. This
register is not a guarantee for trace-ability.
VOQ
The VOQ register contains the parameter for the
adder in the DSP. VOQ is the output voltage without
external magnetic field (B = 0 mT) and programmable
from −VDD up to VDD. For VDD = 5 V, the register can
be changed in steps of 4.9 mV.
Note: If VOQ is programmed to a negative voltage, the
maximum output voltage is limited to:
LOCKR
By setting the first bit of this 2-bit register, all registers
will be locked, and the sensor will no longer respond to
any supply voltage modulation. This bit is active after
the first power-off and power-on sequence after setting
the LOCK bit.
Warning: This register cannot be reset!
D/A-READOUT
VOUTmax = VOQ + V DD
Clamping Voltage
The output voltage range can be clamped in order to
detect failures like shorts to VDD or GND or an open
circuit.
The CLAMP-LOW register contains the parameter for
the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 9.77 mV.
This 14-bit register delivers the actual digital value of
the applied magnetic field after the signal processing.
This register can be read out and is the basis for the
calibration procedure of the sensor in the system environment.
Note: The MSB and LSB are reversed compared with
all the other registers. Please reverse this register after readout.
The CLAMP-HIGH register contains the parameter for
the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in
steps of 9.77 mV.
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HAL82x
DATA SHEET
2.3. Calibration Procedure
Step 3: Define Calibration Points
2.3.1. General Procedure
The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for VOUT1
and VOUT2 result from the application requirements.
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming (Programmer Board Version 5.1) and the
corresponding software (PC824 and PC825) for the
input of the register values.
For the individual calibration of each sensor in the customer application, a two point adjustment is recommended. The calibration shall be done as follows:
Step 1: Input of the registers which need not be
adjusted individually
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, the
output mode and the GP Register value are given for
this application. Therefore, the values of the following
registers should be identical for all sensors of the customer application.
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the
sensor position)
– OUTPUTMODE
– TC, TCSQ and TC-RANGE
(depends on the material of the magnet and the
other temperature dependencies of the application)
Lowclampingvoltage ≤ VOUT1,2 ≤ Highclampingvoltage
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are recommended. The difference of the output voltage
between calibration point 1 and calibration point 2
should be more than 3.5 V.
Step 4: Calculation of VOQ and Sensitivity
Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/AREADOUT1.
Now, set the system to calibration point 2, read the
register D/A-READOUT again, and get the value D/AREADOUT2.
With these values and the target values VOUT1 and
VOUT2, for the calibration points 1 and 2, respectively,
the values for Sensitivity and VOQ are calculated as:
1
( Vout2 – Vout1 )
16384
Sensitivity = --- × --------------------------------------------------------------------------------- × --------------2 ( D/A-Readout2 – D/A-Readout1 )
5
– GP
(if the customer wants to store own production information. It is not necessary to change this register)
As the clamping voltages are given. They have an
influence on the D/A-Readout value and have to be set
therefore after the adjustment process.
1
Vout2 × 16384
V OQ = ------ × ------------------------------------- –
16
5
5
[ ( D/A-Readout2 – 8192 ) × Sensitivity × 2 ] × -----------1024
Write the appropriate settings into the HAL82x registers.
This calculation has to be done individually for each
sensor.
Step 2: Initialize DSP
As the D/A-READOUT register value depends on
the settings of SENSITIVITY, VOQ and CLAMPLOW/HIGH, these registers have to be initialized
with defined values, first:
– VOQINITIAL = 2.5 V
Next, write the calculated values for Sensitivity and
VOQ into the IC for adjusting the sensor. At that time it
is also possible to store the application specific values
for Clamp-Low and Clamp-High into the sensors
EEPROM.
– SensitivityINITIAL = 0.5
– Clamp-Low = 0 V
– Clamp-High = 4.999 V
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HAL82x
DATA SHEET
The sensor is now calibrated for the customer application. However, the programming can be changed again
and again if necessary.
Note: For a recalibration, the calibration procedure
has to be started at the beginning (step 1). A
new initialization is necessary, as the initial values from step 1 are overwritten in step 4.
Step 5: Locking the Sensor
The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK
function becomes effective after power-down and
power-up of the Hall IC. The sensor is now locked and
does not respond to any programming or reading commands.
Warning: This register can not be reset!
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HAL82x
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread
Weight approximately 0.12 g
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HAL82x
DATA SHEET
Fig. 3–2:
TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
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HAL82x
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Fig. 3–3:
TO92UT-2: Dimensions ammopack inline, not spread
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HAL82x
DATA SHEET
Fig. 3–4:
TO92UT-1: Dimensions ammopack inline, spread
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3.2. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
3.3. Positions of Sensitive Areas
TO92UT-1/-2
y
1.5 mm nominal
A4
0.3 mm nominal
Bd
0.3 mm
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−8.5
8.5
V
VDD
Supply Voltage
1
−14.41) 2)
14.41) 2)
V
−IDD
Reverse Supply Current
1
−
501)
mA
VOUT
Output Voltage
3
−55)
−55)
8.53)
14.43) 2)
V
VOUT − VDD
Excess of Output Voltage
over Supply Voltage
3,1
−
2
V
IOUT
Continuous Output Current
3
−10
10
mA
tSh
Output Short Circuit Duration
3
−
10
min
TJ
Junction Temperature Range
−40
−40
1704)
150
°C
°C
NPROG
Number of Programming Cycles
−
100
1)
2)
3)
4)
5)
as long as TJmax is not exceeded
t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min)
as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V)
t < 1000h
internal protection resistor = 50 Ω
Micronas
Feb. 3, 2009; DSH000143_003EN
17
HAL82x
DATA SHEET
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
4.5
5
5.5
V
IOUT
Continuous Output Current
3
−1
−
1
mA
RL
Load Resistor
3
5.0
10
−
kΩ
CL
Load Capacitance
3
0.33
10
1000
nF
RL: Can be pull-up or pull-down resistor
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Micronas
HAL82x
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V..
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
IDD
Supply Current
over Temperature Range
1
−
7
10
mA
VDDZ
Overvoltage Protection
at Supply
1
−
17.5
20
V
IDD = 25 mA, TJ = 25 °C, t = 20 ms
VOZ
Overvoltage Protection
at Output
3
−
17
19.5
V
IO = 10 mA, TJ = 25 °C, t = 20 ms
Resolution
3
−
12
−
bit
ratiometric to VDD 1)
Differential Non-Linearity of D/A Converter
3
−0.9
0
0.9
LSB
For HAL824:
Only at 25 °C ambient temperature
−2.0
0
2.0
LSB
For HAL825:
Only at 25 °C ambient temperature
−0.5
0
0.5
%
% of supply voltage2)
DNL
INL
Conditions
Non-Linearity of Output Voltage over
Temperature
3
ER
Ratiometric Error of Output
over Temperature
(Error in VOUT / VDD)
3
−0.5
0
0.5
%
⎥ VOUT1 - VOUT2⎥ > 2 V
during calibration procedure
Voffset
Offset Drift over Temperature Range
⎥VOUT(B = 0 mT)25°C− VOUT(B = 0 mT)max⎥
3
0
0.1
0.2
% VDD
For HAL824:
VDD = 5 V; 60 mT range, 3 db
frequency = 500 Hz, TC = 15,
TCSQ= 1, TC-Range = 1,
−0.6 < sensitivity < 0.6
0
0.15
0.25
% VDD
For HAL825:
VDD = 5 V; 60 mT range, 3 dB
frequency = 500 Hz, TC = 15,
TCSQ= 1, TC-Range = 1,
−0.6 < sensitivity < 0.6
−1
0
1
%
For HAL824:
VDD = 5 V; 60 mT range, 3 db
frequency = 500 Hz, TC & TCSQ
selection for 0 ppm/k
(see Section 3.6.1. on page 20)
−2
0
2
%
For HAL824 & HAL825:
VDD = 5 V; 60 mT range, 3 db
frequency = 500 Hz, TC & TCSQ
selection for linearized
temperature coefficients in TCRange = 1
(see Section 3.6.1. on page 20)
ES
For Vout = 0.35 V ... 4.65 V;
VDD = 5 V
Error in Magnetic Sensitivity over
Temperature Range
3
ΔVOUTCL
Accuracy of Output Voltage at Clamping
Low Voltage over Temperature Range
3
−45
0
45
mV
RL = 5 kΩ, VDD = 5 V
ΔVOUTCH
Accuracy of Output Voltage at Clamping
High Voltage over Temperature Range
3
−45
0
45
mV
RL = 5 kΩ, VDD = 5 V
VOUTH
Upper Limit of Signal Band3)
3
4.65
4.8
−
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA
VOUTL
3)
Lower Limit of Signal Band
3
−
0.2
0.35
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA
fADC
Internal ADC Frequency over Temperature
Range
−
−
128
−
kHz
1)
2)
3)
Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096
if more than 50% of the selected magnetic field range is used and the temperature compensation is suitable
Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH
Micronas
Feb. 3, 2009; DSH000143_003EN
19
HAL82x
DATA SHEET
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
tr(O)
Step Response Time of Output
3
−
3
2
5
4
ms
ms
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
CL = 10 nF, time from 10% to 90%
of final output voltage for a step
like
signal Bstep from 0 mT to Bmax
td(O)
Delay Time of Output
3
−
0.1
0.5
ms
CL = 10 nF
tPOD
Power-Up Time (Time to Reach Stabilized
Output Voltage)
−
1.5
1.7
1.9
ms
CL = 10 nF, 90% of VOUT
BW
Small Signal Bandwidth (−3 dB)
3
−
1
−
kHz
BAC < 10 mT;
3 dB Filter frequency = 1 kHz
VOUTn
Noise Output Voltagepp
3
−
6
15
mV
magnetic range = 60 mT4)
3 dB Filter frequency = 500 Hz
Sensitivity ≤ 0.7; C = 4.7 nF (VDD &
VOUT to GND)
ROUT
Output Resistance over Recommended
Operating Range
3
−
1
10
Ω
VOUTLmax ≤ VOUT ≤ VOUTHmin
TO92UT Packages
Thermal Resistance
Rthja
Junction to Air
−
−
−
235
K/W
Measured with a 1s0p board
Rthjc
Junction to Case
−
−
−
61
K/W
Measured with a 1s0p board
Rthjs
Junction to Solder Point
−
−
−
128
K/W
Measured with a 1s1p board
4)peak-to-peak
value exceeded: 5%
3.6.1. Definition of Sensitivity Error ES
ES is the maximum of the absolute value of 1 minus
the quotient of the normalized measured value1) over
the normalized ideal linear2) value:
meas
ES = max ⎛ abs ⎛ ------------ – 1⎞ ⎞
⎝ ⎝ ideal
⎠⎠
[ Tmin, Tmax ]
In the below example, the maximum error occurs at
°C:
−10
1.001
ES = ------------- – 1 = 0.9%
0.992
1) normalized to achieve a least-square-fit straight-line
that has a value of 1 at 25 °C
2) normalized to achieve a value of 1 at 25 °C
20
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Micronas
HAL82x
DATA SHEET
ideal 200 ppm/k
1.03
relative sensitivity related to 25 °C value
least-square-fit straight-line of
normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-square-fit
straight-line at 25 °C
1.02
1.01
1.001
1.00
0.992
0.99
0.98
−50 −25
-10
0
25
50
75 100
temperature [°C]
125
150
175
Fig. 3–5: ES definition example
3.7. Open-Circuit Detection
at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Comment
VOUT
Output Voltage at
Open VDD Line
3
0
0
0.15
V
VDD = 5 V
RL = 10 kΩ to 200 kΩ
0
0
0.2
V
VDD = 5 V
RL = 5 kΩ to 10 kΩ
4.85
4.9
5.0
V
VDD = 5 V
10 kΩ ≥RL ≤ 200 kΩ
4.8
4.9
5.0
V
VDD = 5 V
5 kΩ ≥ RL < 10 kΩ
VOUT
Output Voltage at
Open GND Line
3
RL: Can be pull-up or pull-down resistor
Micronas
Feb. 3, 2009; DSH000143_003EN
21
HAL82x
DATA SHEET
3.8. Power-On Operation
at TJ = −40 °C to +170 °C, after programming and locking. Typical Characteristics for TJ = 25 °C.
Symbol
Parameter
Min.
Typ.
Max.
Unit
PORUP
Power-On Reset Voltage (UP)
−
3.4
−
V
PORDOWN
Power-On Reset Voltage (DOWN)
−
3.0
−
V
3.9. Overvoltage and Undervoltage Detection
at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VDD,UV
Undervoltage Detection Level
1
−
4.2
4.3
V
1)
VDD,OV
Overvoltage Detection Level
1
8.5
8.9
10.0
V
1)
1)
If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (≥97% of VDD at RL = 10 kΩ to GND).
The CLAMP-LOW register has to be set to a voltage ≥ 200 mV.
Note: The over- and undervoltage detection is activated only after locking the sensor!
3.10. Magnetic Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
BOffset
Magnetic Offset
3
−0.5
0
0.5
mT
B = 0 mT, IOUT = 0 mA, TJ = 25 °C,
unadjusted sensor
ΔBOffset/ΔT
Magnetic Offset Change
due to TJ
−10
0
10
μT/K
B = 0 mT, IOUT = 0 mA
22
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Micronas
HAL82x
DATA SHEET
4. Application Notes
VDD
4.1. Application Circuit
OUT A & Select A
For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor each between ground and
the supply voltage, respectively the output voltage pin.
In addition, the input of the controller unit should be
pulled-down with a 10 kΩ resistor and a ceramic
4.7 nF capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12.5 V for 100 ms. All components connected to the
VDD line at this time must be able to resist this voltage.
10 nF
HAL82x
Sensor B
HAL82x
Sensor A
4.7 nF
OUT B & Select B
4.7 nF
GND
Fig. 4–2: Parallel operation of two HAL82x
4.3. Temperature Compensation
VDD
OUT
μC
HAL82x
4.7 nF
4.7 nF
4.7 nF
GND
10 kΩ
The relationship between the temperature coefficient
of the magnet and the corresponding TC, TCSQ and
TC-Range codes for linear compensation is given in
the following table. In addition to the linear change of
the magnetic field with temperature, the curvature can
be adjusted as well. For this purpose, other TC, TCSQ
and TC-Range combinations are required which are
not shown in the table. Please contact Micronas for
more detailed information on this higher order temperature compensation.
Fig. 4–1: Recommended application circuit
4.2. Use of two HAL82x in Parallel
Two different HAL82x sensors which are operated in
parallel to the same supply and ground line can be
programmed individually. In order to select the IC
which should be programmed, both Hall ICs are inactivated by the “Deactivate” command on the common
supply line. Then, the appropriate IC is activated by an
“Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program
commands. If the second IC has to be programmed,
the “Deactivate” command is sent again, and the second IC can be selected.
Note: The multi-programming of two sensors works
only if the outputs of the two sensors are pulled
to GND with a 10 kΩ pull-down resistor.
Micronas
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
TC
TCSQ
1075
3
31
7
1000
3
28
1
900
3
24
0
750
3
16
2
675
3
12
2
575
3
8
2
450
3
4
2
400
1
31
0
250
1
24
1
150
1
20
1
50
1
16
2
0
1
15
1
−100
1
12
0
−200
1
8
1
−300
1
4
4
−400
1
0
7
Feb. 3, 2009; DSH000143_003EN
23
HAL82x
DATA SHEET
TC
TCSQ
4.4. Ambient Temperature
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
−500
1
0
0
−600
2
31
2
−700
2
28
1
−800
2
24
3
−900
2
20
6
−1000
2
16
7
−1100
2
16
2
−1200
2
12
5
−1300
2
12
0
−1400
2
8
3
−1500
2
4
7
−1600
2
4
1
−1700
2
0
6
−1800
0
31
6
−1900
0
28
7
−2000
0
28
2
−2100
0
24
6
−2200
0
24
1
−2400
0
20
0
−2500
0
16
5
−2600
0
14
5
4.5. EMC and ESD
−2800
0
12
1
−2900
0
8
6
−3000
0
8
3
The HAL82x is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V on board system (product standard ISO 7637
part 1) are not relevant for these applications.
−3100
0
4
7
−3300
0
4
1
−3500
0
0
4
Note: The above table shows only some approximate
values. Micronas recommends to use the TCCalc software to find optimal settings for temperature coefficients. Please contact Micronas for
more detailed information.
24
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = IDD × V DD × R thJ
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the
temperature difference ΔT = 12.93 K.
For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be
calculated as:
T Amax = T Lmax – ΔT
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4–1 is recommended. Applications with this arrangement should
pass the EMC tests according to the product standards ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Feb. 3, 2009; DSH000143_003EN
Micronas
HAL82x
DATA SHEET
5. Programming of the Sensor
– Read a register (see Fig. 5–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
5.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with
a serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VDD-line and the output. The bit time for the
VDD-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
– Programming the EEPROM cells (see Fig. 5–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming voltage.
– Activate a sensor (see Fig. 5–5)
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors will be pulled to
ground by the internal 10 kΩ resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands
will only be accepted from the activated sensor.
5.2. Definition of the Telegram
tr
tf
VDDH
Each telegram starts with the Sync Bit (logical 0),
3 bits for the Command (COM), the Command
Parity Bit (CP), 4 bits for the Address (ADR), and
the Address Parity Bit (AP).
tp0
logical 0
VDDL
There are 4 kinds of telegrams:
– Write a register (see Fig. 5–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
tp0
or
tp1
VDDH
tp0
logical 1
VDDL
or
tp0
tp1
Fig. 5–1: Definition of logical 0 and 1 bit
Table 5–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
VDDL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VDDH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise Time
1
−
−
0.05
ms
tf
Fall Time
1
−
−
0.05
ms
tp0
Bit Time on VDD
1
1.7
1.75
1.8
ms
tp0 is defined through the Sync Bit
tpOUT
Bit Time on Output Pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Voltage Change for Logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VDDPROG
Supply Voltage for
Programming the EEPROM
1
12.4
12.5
12.6
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
trp
Rise Time of Programming Voltage
1
0.2
0.5
1
ms
Micronas
Feb. 3, 2009; DSH000143_003EN
Remarks
25
HAL82x
DATA SHEET
Table 5–1: Telegram parameters, continued
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
tfp
Fall Time of Programming Voltage
1
0
−
1
ms
tw
Delay Time of Programming Voltage
after Acknowledge
1
0.5
0.7
1
ms
Vact
Voltage for an Activate Pulse
3
3
4
5
V
tact
Duration of an Activate Pulse
3
0.05
0.1
0.2
ms
Vout,deact
Output Voltage after Deactivate
Command
3
0
0.1
0.2
V
Remarks
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VDD
Acknowledge
VOUT
Fig. 5–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VDD
Acknowledge
DAT
DP
VOUT
Fig. 5–3: Telegram for coding a Read command
trp
tPROG
tfp
VDDPROG
ERASE and PROM
Sync
COM
CP
ADR
AP
VDD
Acknowledge
VOUT
tw
Fig. 5–4: Telegram for coding the EEPROM programming
VACT
tr
tACT
tf
VOUT
Fig. 5–5: Activate pulse
26
Feb. 3, 2009; DSH000143_003EN
Micronas
HAL82x
DATA SHEET
5.3. Telegram Codes
Address Parity Bit (AP)
Sync Bit
This parity bit is “1” if the number of zeros within the
4 Address bits is uneven. The parity bit is “0” if the
number of zeros is even.
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
Data Bits (DAT)
Command Bits (COM)
The 14 Data Bits contain the register information.
The Command code contains 3 bits and is a binary
number. Table 5–2 shows the available commands
and the corresponding codes for the HAL82x.
The registers use different number formats for the
Data Bits. These formats are explained in Section 5.4.
Command Parity Bit (CP)
In the Write command, the last bits are valid. If, for
example, the TC register (10 bits) is written, only the
last 10 bits are valid.
This parity bit is “1” if the number of zeros within the 3
Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
In the Read command, the first bits are valid. If, for
example, the TC register (10 bits) is read, only the first
10 bits are valid.
Address Bits (ADR)
Data Parity Bit (DP)
The Address code contains 4 bits and is a binary number. Table 5–3 shows the available addresses for the
HAL82x registers.
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is uneven.
Acknowledge
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
Table 5–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all nonvolatile registers (except the lock bits)
ERASE
5
erase all nonvolatile registers (except the lock bits)
Micronas
Feb. 3, 2009; DSH000143_003EN
27
HAL82x
DATA SHEET
5.4. Number Formats
VOQ
– The register range is from −1024 up to 1023.
Binary number:
– The register value is calculated by:
The most significant bit is given as first, the least significant bit as last digit.
V OQ
VOQ = ----------- × 1024
V DD
Example: 101001 represents 41 decimal.
SENSITIVITY
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
– The register value is calculated by:
0101001 represents +41 decimal
1101001 represents −41 decimal
Two’s complementary number:
SENSITIVITY = Sensitivity × 2048
TC
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
Example:
– The register range is from −8192 up to 8191.
– The TC register range is from 0 up to 1023.
– The register value is calculated by:
TC = GROUP × 256 + TCValue × 8 + TCSQValue
0101001 represents +41 decimal
1010111 represents −41 decimal
MODE
5.5. Register Information
– The register range is from 0 up to 255 and contains
the settings for FILTER and RANGE:
CLAMP-LOW
MODE = OUTPUTMODE × 32 + BITRATE × 16 +
FILTER × 8 + RANGE × 2 + EnableProgGPRegisters
– The register range is from 0 up to 255.
– The register value is calculated by:
LowClampingVoltage × 2
CLAMP-LOW = --------------------------------------------------------------- × 255
V DD
D/A-READOUT
– This register is read only.
– The register range is from 0 up to 16383.
CLAMP-HIGH
– The register range is from 0 up to 511.
DEACTIVATE
– The register value is calculated by:
– This register can only be written.
HighClampingVoltage
CLAMP-HIGH = ------------------------------------------------------ × 511
V DD
28
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
Feb. 3, 2009; DSH000143_003EN
Micronas
HAL82x
DATA SHEET
Table 5–3: Available register addresses
Register
Code
Data
Bits
Format
Customer
Remark
CLAMP-LOW
1
8
binary
read/write/program
Low clamping voltage
CLAMP-HIGH
2
9
binary
read/write/program
High clamping voltage
VOQ
3
11
two compl.
binary
read/write/program
SENSITIVITY
4
14
signed binary
read/write/program
Range, filter, output mode,
interface bit time settings
MODE
5
8
binary
read/write/program
Range and filter settings
LOCKR
6
2
binary
read/write/program
Lock Bit
GP REGISTERS 1..3
8
13
binary
read/write/program
It is only possible to program
this register if the mode register bit zero is set to 1.
D/A-READOUT
9
14
binary
read
Bit sequence is reversed
during read sequence.
TC
11
10
binary
read/write/program
bit 0 to 2 TCSQ
bit 3 to 7 TC
bit 7 to 9 TC-RANGE
GP REGISTER 0
12
13
binary
read/write/program
It is only possible to program
this register if the mode register bit zero is set to 1.
DEACTIVATE
15
12
binary
write
Deactivate the sensor
Micronas
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HAL82x
DATA SHEET
Table 5–4: Data formats
Char
DAT3
DAT2
DAT1
DAT0
Register
Bit
15
14
13
12
11
10
09
08
07
06
05
04
03
02
01
00
CLAMP
LOW
Write
Read
−
−
−
−
−
V
−
V
−
V
−
V
−
V
−
V
V
V
V
V
V
−
V
−
V
−
V
−
V
−
V
−
CLAMP
HIGH
Write
Read
−
−
−
−
−
V
−
V
−
V
−
V
−
V
V
V
V
V
V
V
V
V
V
−
V
−
V
−
V
−
V
−
VOQ
Write
Read
−
−
−
−
−
V
−
V
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
−
V
−
V
−
SENSITIVITY
Write
Read
−
−
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MODE
Write
Read
−
−
−
−
−
V
−
V
−
V
−
V
−
V
−
V
V
V
V
V
V
−
V
−
V
−
V
−
V
−
V
−
LOCKR
Write
Read
−
−
−
−
−
V
−
V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
−
V
−
GP 1..3
Registers
Write
Read
−
−
−
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
−
D/AREADOUT
Read
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
TC
Write
Read
−
−
−
−
−
V
−
V
−
V
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
−
V
−
V
−
V
−
GP 0
Register
Write
Read
−
−
−
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
−
DEACTIVATE
Write
−
−
−
−
1
0
0
0
0
0
0
0
1
1
1
1
V: valid, −: ignore, bit order: MSB first
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Micronas
HAL82x
DATA SHEET
5.5.1. Programming Information
If the content of any register (except the lock registers)
is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands must be zero.
ERASE and PROM act on all registers in parallel.
Note: To store data in the GP register it is necessary
to set bit number 0 of the MODE register to one,
before sending an ERASE and PROM command. Otherwise the data stored in the GP register will not be changed.
If all HAL82x registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board.
Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment
and programming of HAL82x. The LOCK function is active after the next power-up of the sensor. The success of the Lock Process should be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal. Electrostatic Discharges
(ESD) may disturb the programming pulses.
Please take precautions against ESD.
Micronas
Feb. 3, 2009; DSH000143_003EN
31
HAL82x
DATA SHEET
6. Data Sheet History
1. Advance Information: “HAL82x Programmable Linear Hall Effect Sensor”, Sept. 20, 2006, 6251-6921AI. First release of the advance information.
2. Data Sheet: “HAL82x High-Precision Programmable Linear Hall-Effect Sensor Family”, Jan. 9, 2008,
DSH000143_001EN. First release of the data sheet.
Major changes:
– package diagrams updated
– ammopack diagrams for TO92UA/UT updated
– Section 3.10. Magnetic Characteristics added
3. Data Sheet: “HAL82x High-Precision Programmable Linear Hall-Effect Sensor Family”,
March 18, 2008, DSH000143_002EN. Second
release of the data sheet. Minor changes:
– Section 2.2. Teminology: missing formualr added
– Section 2.2. Range: table added
– Section 3.10. Magnetic Characteristics added
4. Data Sheet: “HAL82x High-Precision Programmable Linear Hall-Effect Sensor Family”, Feb. 3, 2009,
DSH000143_003EN. Third release of the data
sheet. Major changes:
– Section 1.6. Solderability and Welding updated
– Section 2.2. Bit Time updated
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
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