PD - 91273C IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) ® ™ RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.40Ω 0.40Ω 0.40Ω 0.40Ω ID QPL Part Number 9.4A JANSR2N7381 9.4A JANSF227381 9.4A JANSG2N7381 9.4A JANSH2N7381 TO-257AA HEXFET® International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 9.4 6.0 37 75 0.6 ±20 150 5.5 7.5 16 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( 0.063 in.(1.6mm) from case for 10s) 7.0 (Typical ) C g For footnotes refer to the last page www.irf.com 1 12/17/01 IRHY7230CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units 200 — — V — 0.23 — V/°C — — 2.0 2.5 — — — — — — — — 0.40 0.49 4.0 — 25 250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 7.0 100 -100 50 10 25 35 75 70 60 — C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 250 63 — — — Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =6.0A ➃ VGS = 12V, ID = 9.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 6.0A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =9.4A VDS = 100V V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 100V, ID =9.4A VGS =12V, RG = 7.5Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 9.4 37 1.4 460 2.4 Test Conditions A V nS µC Tj = 25°C, IS = 9.4A, VGS = 0V ➃ Tj = 25°C, IF = 9.4A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 80 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHY7230CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100 K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-257AA) Diode Forward Voltage ➃ 300 - 1000K Rads (Si)2 Test Conditions Units Min Max Min Max 200 2.0 — — — — — 4.0 100 -100 25 0.40 200 1.25 — — — — — 4.5 100 -100 25 0.53 nA — 0.40 — 0.53 Ω VGS = 12V, ID =6.0A — 1.4 — 1.4 V VGS = 0V, IS = 9.4A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =6.0A V µA Ω 1. Part number IRHY7230CM (JANSR2N7381) 2. Part numbers IRHY3230CM, IRHY4230CM, and IRHY8230CM (JANSF2N7381, JANSG2N7381 and JANSH2N7381) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) Energy (MeV) VDS(V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V Cu 28 285 43 190 180 170 125 — Br 36.8 305 39 100 100 100 50 — 200 VDS 150 Cu 100 Br 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHY7230CM Pre-Irradiation 100 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 5.0V 20µs PULSE WIDTH T = 25 C J 1 1 ° 10 10 5.0V TJ = 150 ° C 10 V DS = 50V 20µs PULSE WIDTH 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 12 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C 8 100 Fig 2. Typical Output Characteristics 2.5 7 ° 10 VDS , Drain-to-Source Voltage (V) 100 6 J 1 100 Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH T = 150 C 1 VDS , Drain-to-Source Voltage (V) 5 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 9.4A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1500 C iss 1000 C oss 500 C rss 20 VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) IRHY7230CM ID = 9.4A 16 12 8 4 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 10 VDS , Drain-to-Source Voltage (V) 20 30 40 50 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 I D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS = 160V VDS = 100V VDS = 40V TJ = 150 ° C TJ = 25 ° C 1 10us 100us 10 1ms 10ms 1 V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.2 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHY7230CM Pre-Irradiation 10 RD VDS VGS 8 D.U.T. I D , Drain Current (A) RG + -VDD 6 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHY7230CM 1 5V L VD S D .U .T RG IA S VGS 20V D R IV E R + - VD D 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 400 ID 4.2A 5.9A BOTTOM 9.4A TOP 300 200 100 0 25 V (B R )D S S 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHY7230CM Pre-Irradiation Foot Notes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L=3.40mH Peak IL = 9.4A, VGS =12V ➂ ISD ≤ 9.4A, di/dt ≤ 660A/µs, VDD ≤ 200V, TJ ≤ 150°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-257AA 0.13 [.005] A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 16.89 [.665] 16.39 [.645] 13.63 [.537] 13.39 [.527] 10.92 [.430] 10.42 [.410] 1 2 1.14 [.045] 0.89 [.035] B 3 0.71 [.028] MAX. C 15.88 [.625] 12.70 [.500] 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. C A 3.05 [.120] B PIN AS S IGNMENT S 1 = DRAIN 2 = S OURCE 3 = GAT E IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com