RoHS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MJD112 TO-251/TO-252-2 Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD112 TRANSISTOR (NPN) 1. BASE FEATURES y Complementary darlington power transistors dpak for surface mount applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W RθJC Thermal resistance, junction to case 6.25 ℃/W RθJA Thermal resistance, junction to Ambient 71.4 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC =30mA,IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE=5mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 20 µA Collector-emitter cut-off current ICEO VCE=50V,IE=0 20 µA Emitter cut-off current IEBO VEB=5V,IC=0 2 mA hFE(1) VCE=3V,IC=500mA 500 hFE(2) VCE=3V,IC=2A 1000 hFE(3) VCE=3V,IC=4A 200 VCE(sat)1 IC=2A,IB=8mA 2 V VCE(sat)2 IC=4A,IB=40mA 3 V 2.8 V DC current gain 12000 Collector-emitter saturation voltage Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=3V,IC=2A VCE=10V,IC=0.75A,f=1MHz VCB=10V,IE=0,f=0.1MHz WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn 25 MHz 100 E-mail:[email protected] pF RoHS MJD112 Typical Characteristics WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn MJD112 E-mail:[email protected]