NLAS4053 Analog Multiplexer/ Demultiplexer Triple 2:1 Analog Switch−Multiplexer Improved Process, Sub−Micron Silicon Gate CMOS http://onsemi.com MARKING DIAGRAMS The NLAS4053 is an improved version of the MC14053 and MC74HC4053 fabricated in sub−micron Silicon Gate CMOS technology for lower RDS(on) resistance and improved linearity with low current. This device may be operated either with a single supply or dual supply up to ±3.0 V to pass a 6 VPP signal without coupling capacitors. When operating in single supply mode, it is only necessary to tie VEE, pin 7 to ground. For dual supply operation, VEE is tied to a negative voltage, not to exceed maximum ratings. Pin for pin compatible with all industry standard versions of ‘4053.’ SOIC−16 D SUFFIX CASE 751B Features TSSOP−16 DT SUFFIX CASE 948F • Improved RDS(on) Specifications • Pin for Pin Replacement for MAX4053 and MAX4053A • 16 NLAS4053G AWLYWW 1 16 NLAS 4053 ALYWG G 1 − One Half the Resistance Operating at 5.0 Volts Single or Dual Supply Operation − Single 3−5 Volt Operation, or Dual ±3.0 Volt Operation − With VCC of 3.0 to 3.3 V, Device Can Interface with 1.8 V Logic, − No Translators Needed − Address and Inhibit Pins are Over−Voltage Tolerant and May Be − Driven Up +6.0 V Regardless of VCC − Greatly Improved Noise Margin Over MAX4053 and MAX4053A Improved Linearity Over Standard HC4053 Devices • • Popular SOIC and the Space Saving TSSOP Packages • Pb−Free Packages are Available* A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week G = Pb−Free Package G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 2 1 Publication Order Number: NLAS4053/D NLAS4053 NOB VCC 16 1 NOB COMB COMC 15 14 2 3 NCB NOA NOC NCC 13 12 4 5 AddC AddB 11 10 6 COMA NCA Inhibit AddA NCB COMB 9 NOA COMC 7 8 VEE GND COMA NOC NCA NCC Enable C Figure 1. Pin Connection (Top View) B A Figure 2. Logic Diagram TRUTH TABLE Address Inhibit C B A ON SWITCHES* 1 X don’t care X don’t care X don’t care All switches open 0 0 0 0 COMA−NCA, COMB−NCB, COMC−NCC 0 0 0 1 COMA−NOA, COMB−NCB, COMC−NCC 0 0 1 0 COMA−NCA, COMB−NOB, COMC−NCC 0 0 1 1 COMA−NOA, COMB−NOB, COMC−NCC 0 1 0 0 COMA−NCA, COMB−NCB, COMC−NOC 0 1 0 1 COMA−NOA, COMB−NCB, COMC−NOC 0 1 1 0 COMA−NCA, COMB−NOB, COMC−NOC 0 1 1 1 COMA−NOA, COMB−NOB, COMC−NOC *NO, NC, and COM pins are identical and interchangeable. Either may be considered an input or output; signals pass equally well in either direction. http://onsemi.com 2 NLAS4053 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Value Unit VEE Negative DC Supply Voltage (Referenced to GND) −7.0 to 0.5 V VCC Positive DC Supply Voltage (Note 1) (Referenced to GND) (Referenced to VEE) −0.5 to 7.0 −0.5 to 7.0 V VIS Analog Input Voltage VEE −0.5 to VCC 0.5 V VIN Digital Input Voltage −0.5 to 7.0 V 50 mA −65 to 150 _C 260 _C 150 _C I TSTG Parameter (Referenced to GND) DC Current, Into or Out of Any Pin Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias JA Thermal Resistance SOIC TSSOP 143 164 °C/W PD Power Dissipation in Still Air, SOIC TSSOP 500 450 mW MSL Moisture Sensitivity FR Flammability Rating VESD ILATCHUP Level 1 Oxygen Index: 30% − 35% Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) 2000 200 1000 V Above VCC and Below GND at 125°C (Note 5) 300 mA ESD Withstand Voltage Latchup Performance UL 94 V−0 @ 0.125 in Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The absolute value of VCC |VEE| ≤ 7.0. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol Parameter Min Max Unit VEE Negative DC Supply Voltage (Referenced to GND) −5.5 GND V VCC Positive DC Supply Voltage (Referenced to GND) (Referenced to VEE) 2.5 2.5 5.5 6.6 V VEE VCC V 0 5.5 V −55 125 _C 0 0 100 20 ns/V VIS Analog Input Voltage VIN Digital Input Voltage TA Operating Temperature Range, All Package Types tr, tf Input Rise/Fall Time (Channel Select or Enable Inputs) (Note 6) (Referenced to GND) VCC = 3.0 V 0.3 V VCC = 5.0 V 0.5 V 6. Unused digital inputs may not be left open. All digital inputs must be tied to a high−logic voltage level or a low−logic input voltage level. http://onsemi.com 3 NLAS4053 ORDERING INFORMATION Package Shipping† NLAS4053D SOIC−16 48 Units / Rail NLAS4053DG SOIC−16 (Pb−Free) 48 Units / Rail NLAS4053DR2 SOIC−16 2500 Tape & Reel NLAS4053DR2G SOIC−16 (Pb−Free) 2500 Tape & Reel NLAS4053DT TSSOP−16* 96 Units / Rail NLAS4053DTG TSSOP−16* 96 Units / Rail NLAS4053DTR2 TSSOP−16* 2500 Tape & Reel NLAS4053DTR2G TSSOP−16* 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) VCC V Guaranteed Limit Symbol Parameter −55 to 25°C v85°C v125°C Unit VIH Minimum High−Level Input Voltage, Address and Inhibit Inputs 2.0 3.0 4.5 5.5 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 V VIL Maximum Low−Level Input Voltage, Address and Inhibit Inputs 2.0 3.0 4.5 5.5 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 V IIN Maximum Input Leakage Current, Address or Inhibit Inputs VIN = 6.0 or GND 0 V to 6.0 V 0.1 1.0 1.0 A ICC Maximum Quiescent Supply Current (per Package) Channel Select, Enable and VIS = VCC or GND 6.0 4.0 40 80 A Condition ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS − Analog Section Symbol RON Parameter Test Conditions Guaranteed Limit VCC V VEE V −55 to 25°C v85_C v125_C Unit 3.0 4.5 3.0 0 0 −3.0 86 37 26 108 46 33 120 55 37 3.0 4.5 3.0 0 0 −3.0 15 13 10 20 18 15 20 18 15 Maximum “ON” Resistance VIN = VIL or VIH VIS = VEE to VCC |IS| = 10 mA (Figures 4 thru 9) Maximum Difference in “ON” Resistance Between Any Two Channels in the Same Package VIN = VIL or VIH, Rflat(ON) COM−NO On−Resistance Flatness Vcom 1, 2, 3.5 V Vcom −2, 0, 2 V |IS| = 10 mA 4.5 3.0 0 −3.0 4 2 4 2 5 3 INC(OFF) INO(OFF) Maximum Off−Channel Leakage Current Switch Off VIN = VIL or VIH VIO = VCC −1.0 V or VEE +1.0 V (Figure 17) 6.0 3.0 0 −3.0 0.1 0.1 5.0 5.0 100 100 nA ICOM(ON) Maximum On−Channel Leakage Current, Channel− to−Channel Switch On VIO = VCC −1.0 V or VEE +1.0 V (Figure 17) 6.0 3.0 0 −3.0 0.1 0.1 5.0 5.0 100 100 nA RON |IS| = 10 mA, VIS = 2.0 V VIS = 3.5 V VIS = 2.0 V http://onsemi.com 4 NLAS4053 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ AC CHARACTERISTICS (Input tr = tf = 3 ns) Guaranteed Limit Symbol tBBM Parameter Minimum Break−Before−Make Time Test Conditions VIN = VIL or VIH VIS = VCC RL = 300 CL = 35 pF (Figure 19) −55 to 25_C VCC V VEE V Min Typ* v85_C v125_C Unit 3.0 4.5 3.0 0.0 0.0 −3.0 1.0 1.0 1.0 6.5 5.0 3.5 − − − − − − ns *Typical Characteristics are at 25_C. AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 3 ns) Guaranteed Limit v85°C −55 to 25°C v125°C VCC V VEE V Transition Time (Address Selection Time) (Figure 18) 2.5 3.0 4.5 3.0 0 0 0 −3.0 40 28 23 23 tON Turn−on Time (Figures 14, 15, 20, and 21) Enable to NO or NC 2.5 3.0 4.5 3.0 0 0 0 −3.0 tOFF Turn−off Time (Figures 14, 15, 20, and 21) Enable to NO or NC 2.5 3.0 4.5 3.0 0 0 0 −3.0 CIN Maximum Input Capacitance,Select Inputs 8 CNO or CNC Analog I/O 10 CCOM Common I/O 10 C(ON) Feedthrough 1.0 Symbol tTRANS Parameter Min Typ Max Min Max Min Max Unit 45 30 25 25 50 35 30 28 ns 40 28 23 23 45 30 25 25 50 35 30 28 ns 40 28 23 23 45 30 25 25 50 35 30 28 ns Typical @ 25°C, VCC = 5.0 V pF ADDITIONAL APPLICATION CHARACTERISTICS (GND = 0 V) Symbol Parameter Condition Typ VCC V VEE V 25°C Unit BW Maximum On−Channel Bandwidth or Minimum Frequency Response VIS = ½ (VCC − VEE) Source Amplitude = 0 dBm (Figures 10 and 22) 3.0 4.5 6.0 3.0 0.0 0.0 0.0 −3.0 145 165 180 180 MHz VISO Off−Channel Feedthrough Isolation f = 100 kHz; VIS = ½ (VCC − VEE) Source = 0 dBm (Figures 12 and 22) 3.0 4.5 6.0 3.0 0.0 0.0 0.0 −3.0 −93 −93 −93 −93 dB VONL Maximum Feedthrough On Loss VIS = ½ (VCC − VEE) Source = 0 dBm (Figures 10 and 22) 3.0 4.5 6.0 3.0 0.0 0.0 0.0 −3.0 −2 −2 −2 −2 dB Charge Injection VIN = VCC to VEE, fIS = 1 kHz, tr = tf = 3 ns RIS = 0 , CL= 1000 pF, Q = CL * VOUT (Figures 16 and 23) 5.0 3.0 0.0 −3.0 9.0 12 pC Total Harmonic Distortion THD + Noise fIS = 1 MHz, RL = 10 K, CL = 50 pF, VIS = 5.0 VPP sine wave VIS = 6.0 VPP sine wave (Figure 13) 6.0 3.0 0.0 −3.0 0.10 0.05 Q THD http://onsemi.com 5 % NLAS4053 100 100 10 2.0 V 80 RON () ICC (nA) 1 0.1 0.01 40 VCC = 3.0 V 0.001 3.0 V 3.3 V 4.5 V 5.5 V 20 0.0001 VCC = 5.0 V 0.00001 −40 −20 0 20 60 80 100 0 −4.0 120 −2.0 0 2.0 4.0 6.0 Temperature (°C) VIS (VDC) Figure 3. ICC versus Temp, VCC = 3 V and 5 V Figure 4. RON versus VCC, Temp = 255C 50 100 125°C 90 125°C 85°C 40 80 25°C 70 60 RON () RON () 60 50 85°C 40 25°C 30 20 −55°C 30 10 20 −55°C 10 0 0 0.5 1.0 1.5 0 2.0 1.0 1.5 2.0 2.5 VCom (V) Figure 5. Typical On Resistance VCC = 2.0 V, VEE = 0 V Figure 6. Typical On Resistance VCC = 3.0 V, VEE = 0 V 25 3.0 25 125°C 125°C 85°C 85°C 20 20 15 RON () RON () 0.5 VCom (V) 10 25°C 15 25°C 10 −55°C −55°C 5 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCom (V) VCom (V) Figure 7. Typical On Resistance VCC = 4.5 V, VEE = 0 V Figure 8. Typical On Resistance VCC = 5.5 V, VEE = 0 V http://onsemi.com 6 5 5.5 NLAS4053 25 125°C 85°C RON () 20 15 10 −55°C 25°C 5 0 −4 −2 0 VCom (V) 2 4 50 90 40 72 30 54 PHASE SHIFT (Deg) BANDWIDTH (dB) Figure 9. Typical On Resistance VCC = 3.3 V, VEE = −3.3 V 20 10 0 −10 BANDWIDTH (ON−RESPONSE) −20 36 18 0 −36 −30 −54 −40 −72 −50 PHASE SHIFT −18 −90 0.1 1.0 10 0.1 100 1.0 10 100 FREQUENCY (mHz) FREQUENCY (mHz) Figure 10. Bandwidth Figure 11. Phase Shift 0 0 −20 DISTORTION (%) OFF ISOLATION 10 dB/DIV −10 −30 −40 −50 −60 −70 3.0 5.5 4.5 0.1 3.3 −80 −90 0.01 −100 0.1 1.0 10 10 100 FREQUENCY (mHz) 100 1000 10000 10000 FREQUENCY (mHz) Figure 13. Total Harmonic Distortion Figure 12. Off Isolation http://onsemi.com 7 NLAS4053 30 30 VCC = 4.5 V 25 20 20 TIME (ns) TIME (ns) TA = 25_C 25 15 tON (ns) 10 tOFF (ns) 5 0 2.5 3 3.5 4 4.5 15 10 tON 5 tOFF 0 −55 5 −40 25 85 125 VCC (VOLTS) Temperature (°C) Figure 14. tON and tOFF versus VCC Figure 15. tON and tOFF versus Temp 3.0 100 2.5 10 VCC = 5 V LEAKAGE (nA) Q (pC) 2.0 1.5 1.0 0.5 1 ICOM(ON) 0.1 ICOM(OFF) VCC = 3 V 0.01 0 VCC = 5.0 V INO(OFF) −0.5 0.001 0 1 2 3 4 5 −55 −20 25 70 85 125 VCOM (V) TEMPERATURE (°C) Figure 16. Charge Injection versus COM Voltage Figure 17. Switch Leakage versus Temperature http://onsemi.com 8 NLAS4053 VCC 0.1 F VCC Output VOUT VEE 300 50% Input 50% 0V 35 pF VCC 90% Output Address Select Pin 10% VEE ttrans ttrans Figure 18. Channel Selection Propagation Delay VCC DUT VCC Input Output GND VOUT 0.1 F 300 tBMM 35 pF 90% 90% of VOH Output Address Select Pin GND Figure 19. tBBM (Time Break−Before−Make) VCC DUT VCC 0.1 F Input 50% 0V Output VOUT Open 300 50% VOH 35 pF 90% 90% Output Input GND Enable tON Figure 20. tON/tOFF http://onsemi.com 9 tOFF NLAS4053 VCC VCC Input DUT Output 50% 0V 300 VOUT Open 50% VCC 35 pF Output Input 10% VOL Enable tOFF 10% tON Figure 21. tON/tOFF 50 Reference DUT Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VVOUT for VIN at 100 kHz IN VOUT for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 22. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL http://onsemi.com 10 NLAS4053 DUT VCC VIN Output Open GND CL Output Off Off On VIN Figure 23. Charge Injection: (Q) TYPICAL OPERATION +5.0 V 16 VEE GND +3.0 V VCC 16 VEE 7 8 GND VCC 7 8 −3.0 V Figure 24. 5.0 Volts Single Supply VCC = 5.0 V, VEE = 0 Figure 25. Dual Supply VCC = 3.0 V, VEE = −3.0 V http://onsemi.com 11 VOUT NLAS4053 PACKAGE DIMENSIONS SOIC−16 D SUFFIX CASE 751B−05 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 16 9 −B− 1 P 8 PL 0.25 (0.010) 8 B M S G R K F X 45 _ C −T− SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S http://onsemi.com 12 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 NLAS4053 PACKAGE DIMENSIONS TSSOP−16 DT SUFFIX CASE 948F−01 ISSUE A 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S ÇÇÇ ÇÇÇ ÉÉÉ ÇÇÇ ÉÉÉ K K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. 8 1 N 0.15 (0.006) T U S 0.25 (0.010) A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. M N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE H D DETAIL E G http://onsemi.com 13 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ NLAS4053 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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