MMBT8099LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 500 mAdc Collector Current − Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Symbol Max 1 Unit 2 PD RqJA 225 1.8 mW mW/°C 556 °C/W SOT−23 (TO−236) CASE 318 STYLE 6 300 2.4 mW mW/°C MARKING DIAGRAM °C/W PD Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 417 Junction and Storage Temperature Range TJ, Tstg −55 to +150 KB M G G °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. 1 KB = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT8099LT1G Package Shipping† SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2001 October, 2016 − Rev. 3 1 Publication Order Number: MMBT8099LT1/D MMBT8099LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 80 − 80 − 6.0 − − 0.1 − − 0.1 − − − 0.1 − 100 100 75 300 − − − − 0.4 0.3 − 0.6 − 0.8 150 − − 6.0 − 25 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. www.onsemi.com 2 MMBT8099LT1G TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms +40 V RL 100 RL 100 OUTPUT +10 V RB Vin RB Vin 0 tr = 3.0 ns OUTPUT * CS t 6.0 pF 5.0 mF * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 300 40 20 C, CAPACITANCE (pF) 5.0 V VCE = 1.0 V 100 70 Cibo 10 8.0 6.0 50 4.0 Cobo 30 1.0 1.0 k 700 500 2.0 3.0 5.0 7.0 10 20 30 50 70 0.5 1.0 2.0 10 5.0 20 Figure 2. Current−Gain − Bandwidth Product Figure 3. Capacitance tf 30 20 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 50 100 1.0 k 700 500 ts 100 70 50 10 0.2 VR, REVERSE VOLTAGE (VOLTS) 200 10 2.0 0.1 100 IC, COLLECTOR CURRENT (mA) VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) TJ = 25°C TJ = 25°C 200 I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 1. Switching Time Test Circuits 300 200 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 DUTY CYCLE ≤ 10% 200 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Switching Times Figure 5. Active−Region Safe Operating Area www.onsemi.com 3 MMBT8099LT1G 400 1.0 0.8 25°C 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN TJ = 125°C -55°C 100 VCE = 5.0 V 80 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 60 VCE(sat) @ IC/IB = 10 1.0 10 2.0 3.0 5.0 20 30 50 100 200 R qVB , TEMPERATURE COEFFICIENT (mV/ °C) IC = 50 mA IC = 100 mA IC = 200 mA 0.8 0.4 IC = 10 mA 1.0 0.7 0.5 0.1 0.07 0.05 5.0 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 100 200 -1.0 -1.4 -1.8 RqVB FOR VBE -55°C TO 125°C -2.2 -2.6 -3.0 0.2 20 50 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient D = 0.5 0.2 0.3 0.2 2.0 Figure 7. “ON” Voltages 1.2 0.05 1.0 Figure 6. DC Current Gain IC = 20 mA 0 0.02 0.5 IC, COLLECTOR CURRENT (mA) TJ = 25°C 1.6 0 0.2 IC, COLLECTOR CURRENT (mA) 2.0 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 0.2 0.3 0.5 0.1 0.05 0.02 SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) - TA = P(pk) ZqJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 DUTY CYCLE, D = t1/t2 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 10. Thermal Response www.onsemi.com 4 2.0 k 5.0 k 10 k 20 k 50 k 100 k MMBT8099LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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