(l£ii£ii ^Etnl-CondiKitoi t-Pioaucti, Una.
C/
LS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
PNP
NPN
MJ11011 MJ11012
MJ11013 MJ11014
MJ11015 MJ11016
..designed for use as output devices in complementary general
purpose amplifier applications.
FEATURES:
* High Gain Darlington Performance
* High DC Current Gain hFE = 1000(Min) @ lc = 20 A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
30 AMPERE
COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTOR
60-120 VOLTS
MAXIMUM RATINGS
200 WATTS
Characteristic
Symbol MJ11011 MJ11013 MJ1101S
MJ11012
Unit
MJ11014 MJ11016
Collector-Emitter Voltage
VCEO
60
90
120
V
COIIector-Base Voltage
VCBO
60
90
120
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current-Continuous
-Peak
'c
'CM
30
50
A
Base Current
IB
1.0
A
Total Power Dissipation ©Tc= 25°C
Derate above 25°C
PD
200
1.15
W
W/°C
Operating and Storage Junction
Temperature Range
TO-3
^
.-H— 1 ..
Hi F
j
,—iJ
°C
Tj i^STO
- 65 to +200
~\
/tti~]E
I* *. ii.,/—^
X
THERMAL CHARACTERISTICS
.. ...i
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Case
Rejc
0.87
°c/w
A
PIN 1 BASE
Z.EMfTTER
COLLECTOR(CASE)
FIGURE -1 POWER DERATING
200
t 175
u
ni
LSI vi
XN
N
|l50
^\
§125
'x V
I 1°°
5 75
N.
\
I ^
' 25
25
50
75
100
125
150
175 200
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
MIN
MAX
38.75
19.28
39.96
22.23
9.23
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.18
796
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
TC,TEMPERATURE('C)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
MJ11011, MJ11013, MJ11015 PNP / MJ11012, MJ11014, MJ11016 NPN
ELECTRICAL CHARACTERISTICS ( Tc = 25°C
unless othenMse noted )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
(l c =100mA.I B = 0)
MJ1 101 1,MJ1 1012
MJ1 101 3.MJ1 1014
MJ11015.MJ11016
Collector Cutoff Current
(VCB = 50V, l. = 0.0)
VCE<X«us)
V
60
90
120
mA
ICEO
Collector-Emitter Leakage Current
(Vel = 60V,RM=1.0k ohm )
(Vei = 90V,RM=1.0k ohm )
( V = 1 2 0 V , R i B = 1.0k ohm )
( V = 60 V,R = 1.0k ohm ,Te = 125°C )
(Ves = 90V,RiI=1.0kohm,Te=125°C)
(VeB = 120 V,R,B = 1.0k ohm,Te =125°C )
MJ1 101 1.MJ1 1012
MJ11013.MJ11014
MJ11015.MJ11016
MJ1 101 1.MJ1 1012
MJ11013.MJ11014
MJ11015,MJ11016
Emitter Cutoff Current
(VEB = 5.0V,IC=0 )
1.0
mA
'CER
1.0
1.0
1.0
5.0
5.0
5.0
mA
IEBO
5.0
ON CHARACTERISTICS (1)
DC Current Gain
(I C = 20A,VCS = 5.0V)
(I C =30A,V C1 = 5.0V)
hFE
1000
200
Collector-Emitter Saturation Voltage
(lc = 20A,l. = 200mA)
(lc = 30AI. = 300mA)
V
VCE,-*
Base-Emitter Saturation Voltage
( lc = 20 A, I, = 200 mA )
{ lc = 30 A, I, = 300 mA ) )
3.0
4.0
V
VBE(«D
3.5
5.0
DYNAMIC CHARACTERISTICS
M
Small-Signal Current Gain
(lc = 10A,Vce = 3.0V,f =1.0 MHz)
(1) Pulse Test Pulse width - 300 us , Duty Cycle ^ 2.0%
(2)f T = n,. -In
INTERNAL SCHEMATIC DIAGRAM
NPN
MJ11011
MJ11013
MJ11015
Co 11 act e»f
PNP
MJ11012
MJ11014
MJ11016
4.0