HUASHAN H3619 Npn silicon transistor Datasheet

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H3619
█ APPLICATIONS
High Voltage switching And amplifier.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-126ML
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 1.5W
VCBO ——Collector-Base Voltage………………………… 300V
VCEO ——Collector-Emitter Voltage……………………… 300V
1―Emitter,E
2―Collector,C
3―Base,B
VEBO ——Emitter-Base Voltage……………………………… 7V
IC——Collector Current……………………………………100mA
Ib——Base Current…………………………………………50mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
ICBO
Collector Cut-off Current
1.0
μA
VCB=240V, IE=0
IEBO
Emitter Cut-off Current
1.0
μA
VEB=7V, IC=0
HFE(1) DC Current Gain
20
HFE(2) DC Current Gain
30
VCE=10V, IC=4mA
VCE=10V, IC=20mA
200
VCE(sat) Collector- Emitter Saturation Voltage
1.0
V
IC=10mA, IB=1mA
VBE(sat) Base-Emitter Saturation Voltage
1.0
V
IC=10mA, IB=1mA
ft
Cob
Current Gain-Bandwidth Product
Output Capacitance
50
MHz
30
pF
VCE=10V, IC=20mA,
VCB=20V, IE=0,f=1MHz
Similar pages