October 2007 HYS64T128020EDL–[2.5/3S/3.7]–B 2 0 0 - P i n S m a l l - O u t l i n e d D D R 2 S D R A M Mo d u l e s DDR2 SDRAM SO-DIMM SDRAM RoHS Compliant Internet Data Sheet Rev. 1.12 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules HYS64T128020EDL–[2.5/3S/3.7]–B Revision History: 2007-10, Rev. 1.12 Page Subjects (major changes since last revision) 6-11 Editorial change and adapted to internet edition Previous Revision: 2007-05, Rev. 1.11 All Editorial change Previous Revision: 2007-05, Rev. 1.1 All Added Product Types HYS64T128020EDL-2.5-B and HYS64T128020EDL-3S-B Previous Revision: 2006-10, Rev. 1.0 21 Added IDD currents Previous Revision: 2006-09, Rev. 0.51 All Qimonda update Previous Revision: 2006-04, Rev. 0.5 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] qag_techdoc_rev411 / 3.31 QAG / 2007-01-22 10312006-I253-V1V0 2 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 1 Overview This chapter gives an overview of the 200-pin small-outline DDR2 SDRAM modules product family and describes its main characteristics. 1.1 Features • 200-Pin PC2-6400, PC2-5300 and PC2-4200 DDR2 SDRAM memory modules. • 128Mx64 module organization, and 64Mx16 chip organization • 1GB Modules built with 1 Gbit DDR2 SDRAMs in PGTFBGA-84-11 chipsize packages • Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power supply • All speed grades faster than DDR2-400 comply with DDR2-400 timing specifications. • Programmable CAS Latencies (3, 4, 5 ), Burst Length (8 & 4). • • • • • • • • • • • Auto Refresh (CBR) and Self Refresh Auto Refresh for temperatures above 85 °C tREFI = 3.9 µs. Programmable self refresh rate via EMRS2 setting. Programmable partial array refresh via EMRS2 settings. DCC enabling via EMRS2 setting. All inputs and outputs SSTL_1.8 compatible Off-Chip Driver Impedance Adjustment (OCD) and On-Die Termination (ODT) Serial Presence Detect with E2PROM SO-DIMM Dimensions (nominal): 50 mm42 mm30 mm high, 67.6 mm wide Based on standard reference layouts Raw Cards 'A' RoHS compliant products1) TABLE 1 Performance Table QAG Speed Code –2.5 –3 –3.7 Unit DRAM Speed Grade DDR2 –800E –667C –533C Module Speed Grade PC2 –6400E –5300C –4200C 6–6–6 4–4–4 4–4–4 tCK 200 200 200 MHz 266 333 266 MHz CAS-RCD-RP latencies Max. Clock Frequency CL3 CL4 CL5 CL6 Min. RAS-CAS-Delay Min. Row Precharge Time Min. Row Active Time Min. Row Cycle Time fCK3 fCK4 fCK5 fCK6 tRCD tRP tRAS tRC 333 333 266 MHz 400 – – MHz 15 12 15 ns 15 12 15 ns 45 45 45 ns 60 57 60 ns 1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers. Rev. 1.12, 2007-10 10312006-I253-V1V0 3 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 1.2 Description The Qimonda HYS64T128020EDL–[2.5/3S/3.7]–B module family are small-outline DIMM modules “SO-DIMMs” with 50 mm42 mm30 mm height based on DDR2 technology. DIMMs are available as non-ECC modules in128M × 64 (1GB) in organization and density, intended for mounting into 200-pin connector sockets. The memory array is designed with 1 Gbit Double-Data-RateTwo (DDR2) Synchronous DRAMs. Decoupling capacitors are mounted on the PCB board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and are write protected; the second 128 bytes are available to the customer. TABLE 2 Ordering Information for RoHS Compliant Products Product Type1) Compliance Code2) Description SDRAM Technology 2 Ranks, Non-ECC 1Gbit (×16) 1GB 2R×16 PC2–5300S–555–12–A0 2 Ranks, Non-ECC 1Gbit (×16) HYS64T128020EDL–3.7–B 1GB 2R×16 PC2–4200S–444–12–A0 2 Ranks, Non-ECC 1Gbit (×16) PC2-6400-666 HYS64T128020EDL–2.5–B 1GB 2R×16 PC2–6400S–666–12–A0 PC2-5300-555 HYS64T128020EDL–3S–B PC2-4200-444 1) For detailed information regarding Product Type of Qimonda please see chapter "Product Type Nomenclature" of this datasheet. 2) The Compliance Code is printed on the module label and describes the speed grade, for example "PC2–6400S–666–12–A0" where 6400S means Small-Outline DIMM modules with 6.40 GB/sec Module Bandwidth and "666–12" means Column Address Strobe (CAS) latency =6, Row Column Delay (RCD) latency = 6 and Row Precharge (RP) latency = 6 using the latest JEDEC SPD Revision 1.2 and produced on the Raw Card "A". TABLE 3 Address Format DIMM Density Module Organization Memory Ranks ECC/ Non-ECC # of SDRAMs # of row/bank/column bits Raw Card 1GB 128M × 64 2 Non-ECC 8 A 13/3/10 TABLE 4 Components on Modules Product Type1)2) DRAM Components1) DRAM Density DRAM Organisation HYS64T128020EDL HYB18T1G160BF 1Gbit 64M x 16 1) Green Product 2) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet. Rev. 1.12, 2007-10 10312006-I253-V1V0 4 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 2 Pin Configurations and Block Diagrams 2.1 Pin Configurations The pin configuration of the Small Outline DDR2 SDRAM DIMM is listed by function in Table 5 (200 pins). The abbreviations used in columns Pin Type and Buffer Type are explained in Table 6 and Table 7 respectively. The Pin numbering is depicted in Figure 1 TABLE 5 Pin Configuration of SO-DIMM Pin No. Name Pin Type Buffer Type Function 30 CK0 I SSTL 164 CK1 I SSTL 32 CK0 I SSTL 166 CK1 I SSTL Clock Signals 1:0, Complement Clock Signals 1:0 The system clock inputs. All address and command lines are sampled on the cross point of the rising edge of CK and the falling edge of CK. A Delay Locked Loop (DLL) circuit is driven from the clock inputs and output timing for read operations is synchronized to the input clock. 79 CKE0 I SSTL 80 CKE1 I SSTL NC NC — Not Connected Note: 1-rank module 110 S0 I SSTL 115 S1 I SSTL Chip Select Rank 1:0 Enables the associated DDR2 SDRAM command decoder when LOW and disables the command decoder when HIGH. When the command decoder is disabled, new commands are ignored but previous operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1. Ranks are also called "Physical banks".2 Ranks module NC NC — Not Connected Note: 1-rank module 108 RAS I SSTL Row Address Strobe When sampled at the cross point of the rising edge of CK, and falling edge of CK, RAS, CAS and WE define the operation to be executed by the SDRAM. 113 CAS I SSTL Column Address Strobe Clock Signals Clock Enable Rank 1:0 Activates the DDR2 SDRAM CK signal when HIGH and deactivates the CK signal when LOW. By deactivating the clocks, CKE LOW initiates the Power Down Mode or the Self Refresh Mode. Note: 2 Ranks module Control Signals Rev. 1.12, 2007-10 10312006-I253-V1V0 5 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Pin No. Name Pin Type Buffer Type Function 109 WE I SSTL Write Enable 107 BA0 I SSTL 106 BA1 I SSTL Bank Address Bus 2:0 Selects which DDR2 SDRAM internal bank of four or eight is activated. 85 BA2 I SSTL Bank Address Bus 2 Greater than 512Mb DDR2 SDRAMS NC NC SSTL Less than 1Gb DDR2 SDRAMS Address Bus 12:0 During a Bank Activate command cycle, defines the row address when sampled at the cross-point of the rising edge of CK and falling edge of CK. During a Read or Write command cycle, defines the column address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is HIGH, autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is LOW, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is HIGH, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is LOW, then BA0-BAn are used to define which bank to precharge. Address Signals 102 A0 I SSTL 101 A1 I SSTL 100 A2 I SSTL 99 A3 I SSTL 98 A4 I SSTL 97 A5 I SSTL 94 A6 I SSTL 92 A7 I SSTL 93 A8 I SSTL 91 A9 I SSTL 105 A10 I SSTL AP I SSTL 90 A11 I SSTL 89 A12 I SSTL Address Signal 12 Note: Module based on 256 Mbit or larger dies 116 A13 I SSTL Address Signal 13 Note: 1 Gbit based module NC NC — Not Connected Note: Module based on 512 Mbit or smaller dies A14 I SSTL Address Signal 14 Note: 2 Gbit based module NC NC — Not Connected Note: Module based on 1 Gbit or smaller dies 5 DQ0 I/O SSTL 7 DQ1 I/O SSTL Data Bus 63:0 Note: Data Input / Output pins 17 DQ2 I/O SSTL 19 DQ3 I/O SSTL 4 DQ4 I/O SSTL 6 DQ5 I/O SSTL 14 DQ6 I/O SSTL 16 DQ7 I/O SSTL 23 DQ8 I/O SSTL 86 Data Signals Rev. 1.12, 2007-10 10312006-I253-V1V0 6 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Pin No. Name Pin Type Buffer Type Function 25 DQ9 I/O SSTL 35 DQ10 I/O SSTL Data Bus 63:0 Note: Data Input / Output pins 37 DQ11 I/O SSTL 20 DQ12 I/O SSTL 22 DQ13 I/O SSTL 36 DQ14 I/O SSTL 38 DQ15 I/O SSTL 43 DQ16 I/O SSTL 45 DQ17 I/O SSTL 55 DQ18 I/O SSTL 57 DQ19 I/O SSTL 44 DQ20 I/O SSTL 46 DQ21 I/O SSTL 56 DQ22 I/O SSTL 58 DQ23 I/O SSTL 61 DQ24 I/O SSTL 63 DQ25 I/O SSTL 73 DQ26 I/O SSTL 75 DQ27 I/O SSTL 62 DQ28 I/O SSTL 64 DQ29 I/O SSTL 74 DQ30 I/O SSTL 76 DQ31 I/O SSTL 123 DQ32 I/O SSTL 125 DQ33 I/O SSTL 135 DQ34 I/O SSTL 137 DQ35 I/O SSTL 124 DQ36 I/O SSTL 126 DQ37 I/O SSTL 134 DQ38 I/O SSTL 136 DQ39 I/O SSTL 141 DQ40 I/O SSTL 143 DQ41 I/O SSTL 151 DQ42 I/O SSTL 153 DQ43 I/O SSTL 140 DQ44 I/O SSTL 142 DQ45 I/O SSTL 152 DQ46 I/O SSTL 154 DQ47 I/O SSTL 157 DQ48 I/O SSTL Rev. 1.12, 2007-10 10312006-I253-V1V0 7 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Pin No. Name Pin Type Buffer Type Function 159 DQ49 I/O SSTL 173 DQ50 I/O SSTL Data Bus 63:0 Note: Data Input / Output pins 175 DQ51 I/O SSTL 158 DQ52 I/O SSTL 160 DQ53 I/O SSTL 174 DQ54 I/O SSTL 176 DQ55 I/O SSTL 179 DQ56 I/O SSTL 181 DQ57 I/O SSTL 189 DQ58 I/O SSTL 191 DQ59 I/O SSTL 180 DQ60 I/O SSTL 182 DQ61 I/O SSTL 192 DQ62 I/O SSTL 194 DQ63 I/O SSTL DQS0 I/O SSTL Data Strobe Signals 13 11 DQS0 I/O SSTL 31 DQS1 I/O SSTL 29 DQS1 I/O SSTL 51 DQS2 I/O SSTL 49 DQS2 I/O SSTL 70 DQS3 I/O SSTL 68 DQS3 I/O SSTL 131 DQS4 I/O SSTL 129 DQS4 I/O SSTL 148 DQS5 I/O SSTL 146 DQS5 I/O SSTL 169 DQS6 I/O SSTL 167 DQS6 I/O SSTL 188 DQS7 I/O SSTL 186 DQS7 I/O SSTL Data Strobe Bus 7:0 The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe is sourced by the controller and is centered in the data window. In Read mode the data strobe is sourced by the DDR2 SDRAM and is sent at the leading edge of the data window. DQS signals are complements, and timing is relative to the cross-point of respective DQS and DQS. If the module is to be operated in single ended strobe mode, all DQS signals must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately. Data Mask Signals Rev. 1.12, 2007-10 10312006-I253-V1V0 8 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Pin No. Name Pin Type Buffer Type Function 10 DM0 I SSTL 26 DM1 I SSTL 52 DM2 I SSTL 67 DM3 I SSTL Data Mask Bus 7:0 The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask by allowing input data to be written if it is LOW but blocks the write operation if it is HIGH. In Read mode, DM lines have no effect. 130 DM4 I SSTL 147 DM5 I SSTL 170 DM6 I SSTL 185 DM7 I SSTL 197 SCL I CMOS Serial Bus Clock This signal is used to clock data into and out of the SPD EEPROM and Thermal sensor. 195 SDA I/O OD Serial Bus Data This is a bidirectional pin use to transfer data into and out of the SPD EEPROM and Thermal sensor. A resistor must be connected from SDA to VDDSPD on the motherboard to act as a pull-up. 198 SA0 I CMOS 200 SA1 I CMOS Serial Address Select Bus 2:0 Address pins used to select the SPD and Thermal sensor base address. 50 EVENT O OD EVENT The optional EVENT pin is reserved for use to flag critical module temperature and is used in conjunction with Thermal Sensor. NC - - Not Connected Not connected on modules without temperature sensors. 1 VREF AI — I/O Reference Voltage Reference voltage for the SSTL-18 inputs. 199 VDDSPD PWR — EEPROM Power Supply Power supplies for Serial Presence Detect, Thermal Sensor and ground for the module. 81,82,87,88,95,96,103,104, 111,112,117,118 VDD PWR — Power Supply Power supplies for core, I/O and ground for the module. VSS 2,3,8,9,12,15,18,21,24,27,28, 33,34,39,40,41,42,47,48,53, 54,59,60,65,66,71,72,77,78, 121,122,127,128,132,133,138,13 9,144,145,149,150,155,156, 161,162,165,168, 171,172,177, 178,183,184,187,190,193,196 GND — Ground Plane Power supplies for core, I/O, Serial Presence Detect, Thermal Sensor and ground for the module. I SSTL On-Die Termination Control 1:0 EEPROM Power Supplies Other pins 114 Rev. 1.12, 2007-10 10312006-I253-V1V0 ODT0 9 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Pin No. Name Pin Type Buffer Type Function 119 ODT1 I SSTL On-Die Termination Control 1 Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR2 SDRAM mode register. Note: 2 Rank modules NC NC — Not Connected Note: 1 Rank modules NC NC — Not connected Pins not connected on Qimonda SO-DIMMs 69,83,84,120,163 TABLE 6 Abbreviations for pin Type Abbreviation Description I Standard input-only pin. Digital levels. O Output. Digital levels. I/O I/O is a bidirectional input/output signal. AI Input. Analog levels. PWR Power GND Ground NC Not Connected TABLE 7 Abbreviations for Buffer Type Abbreviation Description SSTL Serial Stub Terminated Logic (SSTL_18) LV-CMOS Low Voltage CMOS CMOS CMOS Levels OD Open Drain. The corresponding pin has 2 operational states, active low and tri-state, and allows multiple devices to share as a wire-OR. Rev. 1.12, 2007-10 10312006-I253-V1V0 10 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules FIGURE 1 Pin Configuration SO-DIMM (200 pin) 62%& $1 633 $13 $1 633 $1 $13 633 $1 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 633 $1 $13 633 $1 $1 633 .# $1 633 6$$ .#"! ! ! ! ! !!0 7% #!3 6$$ 633 $1 $13 633 $1 $1 633 633 $1 $1 633 633 $13 $1 633 $1 $- $1 633 3#, 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 633 $1 $13 633 $1 $1 633 $13 $1 633 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN $1 633 $13 $1 633 $1 $- 633 $1 #+% .# 6$$ ! 6$$ ! 6$$ "! 6$$ .#3 .#/$4 $1 633 $13 $1 633 $1 $- $1 633 $1 .# $13 633 $1 $1 633 633 $1 3$! 6$$30$ 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN & 2 / . 4 3 ) $ % " ! # + 3 ) $ % 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN $1 633 633 $1 $1 633 633 #+ $1 633 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN $1 633 $- $1 633 $1 $13 633 $1 .##+% .# 6$$ ! 6$$ ! 6$$ 2!3 6$$ .#! .# $1 633 633 $1 $1 633 $13 $1 633 $1 #+ 633 633 $1 $1 633 $13 $1 633 3! 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 633 $1 $- $1 633 $1 $- #+ 633 $1 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 0IN 633 $1 .#%6%.4 633 $1 $1 633 $13 $1 633 6$$ .#! ! ! ! ! "! 3 /$4 6$$ 633 $1 $- $1 633 $1 $13 633 $1 $1 633 #+ $- $1 633 $1 $13 633 $1 3! -004 Rev. 1.12, 2007-10 10312006-I253-V1V0 11 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 3 Electrical Characteristics 3.1 Absolute Maximum Ratings Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TABLE 8 Absolute Maximum Ratings Symbol Parameter Rating Unit Note Min. Max. Voltage on VDD pin relative to VSS –1.0 +2.3 V 1) Voltage on VDDQ pin relative to VSS –0.5 +2.3 V 1)1) Voltage on VDDL pin relative to VSS –0.5 +2.3 V 1)1) Voltage on any pin relative to VSS –0.5 +2.3 1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV. V 1) VDD VDDQ VDDL VIN, VOUT TABLE 9 Environmental Requirements Parameter Symbol Values Unit Note Min. Max. 0 +65 °C Storage Temperature TOPR TSTG – 50 +100 °C 1) Barometric Pressure (operating & storage) PBar +69 +105 kPa 2) Operating Humidity (relative) HOPR HSTG 10 90 % 5 95 % Operating temperature (ambient) Storage Humidity (without condensation) 1) Storage Temperature is the case surface temperature on the center/top side of the DRAM. 2) Up to 3000 m. Rev. 1.12, 2007-10 10312006-I253-V1V0 12 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules TABLE 10 DRAM Component Operating Temperature Range Symbol TCASE Parameter Rating Operating Temperature Min. Max. 0 95 Unit Note °C 1)2)3)4) 1) Operating Temperature is the case surface temperature on the center / top side of the DRAM. 2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case temperature must be maintained between 0 - 95 °C under all other specification parameters. 3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs 4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50% 3.2 DC Operating Conditions TABLE 11 Supply Voltage Levels and DC Operating Conditions Parameter Device Supply Voltage Output Supply Voltage Input Reference Voltage SPD Supply Voltage DC Input Logic High DC Input Logic Low Symbol VDD VDDQ VREF VDDSPD VIH(DC) VIL (DC) IL Values Unit Min. Typ. Max. 1.7 1.8 1.9 V 1.7 1.8 1.9 V 1) 0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ V 2) 1.7 — 3.6 V VREF + 0.125 — V – 0.30 — VDDQ + 0.3 VREF – 0.125 V In / Output Leakage Current –5 — 5 µA 1) Under all conditions, VDDQ must be less than or equal to VDD 2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ. 3) Input voltage for any connector pin under test of 0 V ≤ VIN ≤ VDDQ + 0.3 V; all other pins at 0 V. Current is per pin Rev. 1.12, 2007-10 10312006-I253-V1V0 Note 13 3) Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 3.3 Timing Characteristics 3.3.1 Speed Grade Definitions TABLE 12 Speed Grade Definition Speed Grade DDR2–800E QAG Sort Name –2.5 CAS-RCD-RP latencies 6–6–6 Parameter Clock Period @ CL = 3 @ CL = 4 @ CL = 5 @ CL = 6 Row Active Time Row Cycle Time RAS-CAS-Delay Row Precharge Time Unit Note tCK Symbol Min. Max. — tCK tCK tCK tCK tRAS tRC tRCD tRP 5 8 ns 1)2)3)4) 3.75 8 ns 1)2)3)4) 3 8 ns 1)2)3)4) 2.5 8 ns 1)2)3)4) 45 70k ns 1)2)3)4)5) 60 — ns 1)2)3)4) 15 — ns 1)2)3)4) 15 — ns 1)2)3)4) TABLE 13 Speed Grade Definition Speed Grade DDR2–667C DDR2–533C QAG Sort Name –3 –3.7 CAS-RCD-RP latencies 4–4–4 4–4–4 Parameter Clock Period @ CL = 3 @ CL = 4 @ CL = 5 Row Active Time Row Cycle Time RAS-CAS-Delay Row Precharge Time Unit Note tCK Symbol Min. Max. Min. Max. — tCK tCK tCK tRAS tRC tRCD tRP 5 8 5 8 ns 1)2)3)4) 3 8 3.75 8 ns 1)2)3)4) 3 8 3.75 8 ns 1)2)3)4) 45 70k 45 70k ns 1)2)3)4)5) 57 — 60 — ns 1)2)3)4) 12 — 15 — ns 1)2)3)4) 12 — 15 — ns 1)2)3)4) 1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal OCD drive strength (EMRS(1) A1 = 0) mentioned in Component datasheet. Rev. 1.12, 2007-10 10312006-I253-V1V0 14 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS, input reference level is the crosspoint when in differential strobe mode 3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ 4) The output timing reference voltage level is VTT. 5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI. 3.3.2 Component AC Timing Parameters TABLE 14 DRAM Component Timing Parameter by Speed Grade - DDR2–800 and DDR2–667 Parameter Symbol DDR2–800 DDR2–667 Unit Note2)3)5 )6)7)8) Min. tCCD tCH.AVG Average clock period tCK.AVG CKE minimum pulse width ( high and tCKE Max. Min. Max. CAS to CAS command delay 2 — 2 — nCK Average clock high pulse width 0.48 0.52 0.48 0.52 tCK.AVG 2500 8000 3000 8000 ps 3 — 3 — nCK 12) 0.48 0.52 0.48 0.52 tCK.AVG 10)11) WR + tnRP — WR + tnRP — nCK 13)14) 10)11) low pulse width) Average clock low pulse width Auto-Precharge write recovery + precharge time tCL.AVG tDAL Minimum time clocks remain ON after tDELAY CKE asynchronously drops LOW tIS + tCK .AVG –– + tIH tIS + –– tCK .AVG + tIH ns tDH.BASE DQ and DM input pulse width for each tDIPW 125 –– 175 –– ps 0.35 — 0.35 — tCK.AVG DQS input high pulse width tDQSH tDQSL DQS-DQ skew for DQS & associated tDQSQ 0.35 — 0.35 — DQS input low pulse width 0.35 — 0.35 — tCK.AVG tCK.AVG — 200 — 240 ps 16) 17) DQ and DM input hold time input 15)19)20) DQ signals DQS latching rising transition to associated clock edges tDQSS – 0.25 + 0.25 – 0.25 + 0.25 tCK.AVG DQ and DM input setup time tDS.BASE tDSH tDSS tFAW 50 –– 100 –– ps 18)19)20) 17) CK half pulse width 0.2 — 0.2 — 0.2 — 0.2 — tCK.AVG tCK.AVG 45 — 50 — ns 35) tHP Min(tCH.ABS, tCL.ABS) __ Min(tCH.ABS, tCL.ABS) __ ps 21) Data-out high-impedance time from CK / CK tHZ — tAC.MAX — tAC.MAX ps 9)22) Address and control input hold time tIH.BASE tIPW 250 — 275 — ps 23)25) 0.6 — 0.6 — tCK.AVG DQS falling edge hold time from CK DQS falling edge to CK setup time Four Activate Window for 2KB page size products Control & address input pulse width for each input Rev. 1.12, 2007-10 10312006-I253-V1V0 15 17) Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Parameter Symbol DDR2–800 DDR2–667 Unit Note2)3)5 )6)7)8) Min. Max. Min. Max. Address and control input setup time tIS.BASE 175 — 200 — ps 24)25) DQ low impedance time from CK/CK tLZ.DQ 2 x tAC.MIN tAC.MAX 2 x tAC.MIN ps 9)22) tAC.MIN tAC.MAX tAC.MIN tAC.MAX tAC.MAX ps 9)22) MRS command to ODT update delay tMOD 0 12 0 12 ns 35) Mode register set command cycle time tMRD 2 — 2 — nCK OCD drive mode output delay tOIT tQH tQHS tREFI 0 12 0 12 ns 35) tHP – tQHS — tHP – tQHS — ps 26) — 300 — 340 ps 27) — 7.8 — 7.8 µs 28)29) — 3.9 — 3.9 µs 28)30) — 127.5 — ns 31) DQS/DQS low-impedance time from CK / CK DQ/DQS output hold time from DQS DQ hold skew factor Average periodic refresh Interval tLZ.DQS Auto-Refresh to Active/Auto-Refresh command period tRFC 127.5 Precharge-All (8 banks) command period tRP tRP + 1 × tCK — tRP + 1 × tCK — ns Read preamble tRPRE tRPST tRRD 0.9 1.1 0.9 1.1 32)33) 0.4 0.6 0.4 0.6 tCK.AVG tCK.AVG 10 — 10 — ns 35) Internal Read to Precharge command tRTP delay 7.5 — 7.5 — ns 35) tWPRE Write postamble tWPST Write recovery time tWR Internal write to read command delay tWTR Exit power down to read command tXARD Exit active power-down mode to read tXARDS 0.35 — 0.35 — 0.4 0.6 0.4 0.6 tCK.AVG tCK.AVG 15 — 15 — ns 35) 7.5 — 7.5 — ns 35)36) 2 — 2 — nCK 8 – AL — 7 – AL — nCK Read postamble Active to active command period for 2KB page size products Write preamble 32)34) command (slow exit, lower power) Exit precharge power-down to any valid command (other than NOP or Deselect) tXP 2 — 2 — nCK Exit self-refresh to a non-read command tXSNR tRFC +10 — tRFC +10 — ns — 200 — Exit self-refresh to read command tXSRD 200 Write command to DQS associated clock edges WL RL – 1 RL–1 35) nCK nCK 1) For details and notes see the relevant Qimonda component data sheet 2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. 3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down and then restarted through the specified initialization sequence before normal operation can continue. 4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Rev. 1.12, 2007-10 10312006-I253-V1V0 16 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS, input reference level is the crosspoint when in differential strobe mode. component 6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low. 7) The output timing reference voltage level is VTT. component datasheet 8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min). 9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272 ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN – tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and tDQSCK.MAX(DERATED) = tDQSCK.MAX – tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED) = - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!) 10) Input clock jitter spec parameter. These parameters component datasheet are referred to as 'input clock jitter spec parameters' and these parameters apply to DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution. 11) These parameters are specified per their average values, however it is understood that the relationship component datasheet between the average timing and the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations component datasheet). 12) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 x tCK + tIH. 13) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks. 14) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR. 15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and VIH.DC.MIN. See Figure 3. 16) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output slew rate mismatch between DQS / DQS and associated DQ in any given cycle. 17) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not. 18) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See Figure 3. 19) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed. 20) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal ((L/U/R)DQS / DQS) crossing. 21) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the minimum of the actual instantaneous clock low time. 22) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) . 23) input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied to the device under test. See Figure 4. 24) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied to the device under test. See Figure 4. 25) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is present or not. 26) tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.} Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum. Rev. 1.12, 2007-10 10312006-I253-V1V0 17 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 27) 28) 29) 30) 31) 32) 33) 34) 35) 36) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation of the output drivers. The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C and 95 °C. 0 °C≤ TCASE ≤ 85 °C. 85 °C < TCASE ≤ 95 °C. A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST), or begins driving (tRPRE). Figure 2 shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX + tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!). When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX + tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!). For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK.AVG}, which is in clock cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK.AVG}, which is in clock cycles, if all input clock jitter specifications are met. This means: For DDR2–667 5–5–5, of which tRP = 15 ns, the device will support tnRP = RU{tRP / tCK.AVG} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at Tm + 5 is valid even if (Tm + 5 - Tm) is less than 15 ns due to input clock jitter. tWTR is at lease two clocks (2 x tCK) independent of operation frequency. FIGURE 2 Method for calculating transitions and endpoint 92+[P9 977[P9 92+[P9 977[P9 W/= W+= W535(EHJLQSRLQW W5367 H QGSRLQW 92/[P9 977[P9 92/[P9 977[P9 7 7 7 7 W+=W5367 HQGSRLQW 77 Rev. 1.12, 2007-10 10312006-I253-V1V0 W/=W535( E HJLQSRLQW 7 7 18 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules FIGURE 3 Differential input waveform timing tDS and tDH '46 '46 W'6 W'+ W' 6 W'+ 9 '' 4 9 PL Q ,+ D F 9 PL Q ,+ G F 95() GF 9 PD [ ,/ G F 9 PD [ ,/ D F 9 66 0377 FIGURE 4 Differential input waveform timing tlS and tlH &. &. W,6 W,+ W,6 W,+ 9''4 9,+DF PLQ 9,+GF PLQ 95() GF 9,/ GF PD[ 9,/ DF PD[ 966 Rev. 1.12, 2007-10 10312006-I253-V1V0 19 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules TABLE 15 DRAM Component Timing Parameter by Speed Grade - DDR2–533 Parameter Symbol DDR2–533 Unit Notes2)3)4)5)6) 7) Min. Max. tCCD tCH tCKE tCL tDAL 2 — Minimum time clocks remain ON after CKE asynchronously drops LOW DQ and DM input hold time (differential data strobe) 0.45 0.55 3 — 0.45 0.55 WR + tRP — tCK tCK tCK tCK tCK tDELAY tIS + tCK + tIH –– ns 9) tDH.BASE 225 –– ps 10) –25 — ps 11) tDIPW 0.35 — tCK DQS input HIGH pulse width (write cycle) tDQSH 0.35 — DQS input LOW pulse width (write cycle) tDQSL 0.35 — tCK tCK CAS A to CAS B command period CK, CK high-level width CKE minimum high and low pulse width CK, CK low-level width Auto-Precharge write recovery + precharge time DQ and DM input hold time (single ended tDH1.BASE data strobe) DQ and DM input pulse width (each input) 8) 11) DQS-DQ skew (for DQS & associated DQ signals) tDQSQ — 300 ps Write command to 1st DQS latching transition tDQSS – 0.25 + 0.25 tCK 100 — ps 11) 11) DQ and DM input setup time (differential tDS.BASE data strobe) DQ and DM input setup time (single ended data strobe) tDS1.BASE –25 — ps DQS falling edge hold time from CK (write cycle) tDSH 0.2 — tCK DQS falling edge to CK setup time (write tDSS cycle) 0.2 — tCK tFAW Clock half period tHP Data-out high-impedance time from CK / tHZ 50 — ns Four Activate Window period Address and control input pulse width (each input) Address and control input setup time DQ low-impedance time from CK / CK DQS low-impedance from CK / CK MRS command to ODT update delay Mode register set command cycle time Rev. 1.12, 2007-10 10312006-I253-V1V0 12) MIN. (tCL, tCH) — tAC.MAX ps 13) tIH.BASE tIPW 375 — ps 11) 0.6 — tCK tIS.BASE tLZ(DQ) tLZ(DQS) tMOD tMRD 250 — ps 11) 2 × tAC.MIN ps 14) tAC.MIN tAC.MAX tAC.MAX ps 14) 0 12 ns 2 — tCK CK Address and control input hold time 13) 20 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Parameter Symbol DDR2–533 Unit Notes2)3)4)5)6) 7) OCD drive mode output delay tOIT tQH tQHS tREFI tREFI tRFC Min. Max. 0 12 ns tHP –tQHS — — 400 ps — 7.8 µs 14)15) — 3.9 µs 16)18) 127.5 — ns 17) Precharge-All (8 banks) command period tRP tRP + 1 × tCK — ns tRPRE Read postamble tRPST Active bank A to Active bank B command tRRD 0.9 1.1 14) 0.40 0.60 tCK tCK 10 — ns 16)22) Data output hold time from DQS Data hold skew factor Average periodic refresh Interval Average periodic refresh Interval Auto-Refresh to Active/Auto-Refresh command period Read preamble 14) period Internal Read to Precharge command delay tRTP 7.5 — ns Write preamble tWPRE tWPST tWR 0.25 — 0.40 0.60 tCK tCK 15 — ns tWTR tXARD 7.5 — ns 20) 2 — tCK 21) Exit active power-down mode to Read command (slow exit, lower power) tXARDS 6 – AL — tCK 21) Exit precharge power-down to any valid command (other than NOP or Deselect) tXP 2 — tCK tRFC +10 — ns — tCK tCK Write postamble Write recovery time for write without Auto-Precharge Internal Write to Read command delay Exit power down to any valid command (other than NOP or Deselect) Exit Self-Refresh to non-Read command tXSNR Exit Self-Refresh to Read command tXSRD 200 Write recovery time for write with AutoPrecharge WR tWR/tCK 19) 22) 1) For details and notes see the relevant Qimonda component data sheet 2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. 3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down and then restarted through the specified initialization sequence before normal operation can continue. 4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. 5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS, input reference level is the crosspoint when in differential strobe mode. component 6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low. 7) The output timing reference voltage level is VTT. component datasheet 8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter stored in the MR. 9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode. 10) For timing definition, refer to the Component data sheet. 11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate mis-match between DQS / DQS and associated DQ in any given cycle. Rev. 1.12, 2007-10 10312006-I253-V1V0 21 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving (tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These parameters are verified by design and characterization, but not subject to production test. 14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C and 95 °C. 15) 0 °C≤ TCASE ≤ 85 °C. 16) 85 °C < TCASE ≤ 95 °C. 17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device 18) The tRRD timing parameter depends on the page size of the DRAM organization. 19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. 20) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz. 21) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active powerdown mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow power-down exit timing tXARDS has to be satisfied. 22) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter stored in the MRS. 3.3.3 ODT AC Electrical Characteristics This chapter describes the ODT AC electrical characteristics. TABLE 16 ODT AC Characteristics and Operating Conditions for DDR2-667 & DDR2-800 Symbol tAOND tAON tAONPD tAOFD tAOF tAOFPD tANPD tAXPD Parameter / Condition Values Unit Note Min. Max. ODT turn-on delay 2 2 nCK 1) ODT turn-on tAC.MAX + 0.7 ns 2 tCK + tAC.MAX + 1 ns ns 1)2) ODT turn-on (Power-Down Modes) tAC.MIN tAC.MIN + 2 ns ns 1) ODT turn-off delay 2.5 2.5 nCK 1) ns 1)3) ns 1) nCK nCK 1) ODT turn-off (Power-Down Modes) tAC.MIN tAC.MIN + 2 ns tAC.MAX + 0.6 ns 2.5 tCK + tAC.MAX + 1 ns ODT to Power Down Mode Entry Latency 3 — ODT turn-off 1) ODT Power Down Exit Latency 8 — 1) New units, “tCK.AVG” and “nCK”, are introduced in DDR2-667 and DDR2-800. Unit “tCK.AVG” represents the actual tCK.AVG of the input clock under operation. Unit “nCK” represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and DDR2-533, “tCK” is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min). 2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is 2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges. 3) ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5 ns (= 0.5 x 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges. Rev. 1.12, 2007-10 10312006-I253-V1V0 22 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules TABLE 17 ODT AC Characteristics and Operating Conditions for DDR2-533 Symbol tAOND tAON tAONPD tAOFD tAOF tAOFPD tANPD tAXPD Parameter / Condition Values Unit Min. Max. ODT turn-on delay 2 2 tCK ODT turn-on tAC.MAX + 1 ns 2 tCK + tAC.MAX + 1 ns ns ODT turn-on (Power-Down Modes) tAC.MIN tAC.MIN + 2 ns ns ODT turn-off delay 2.5 2.5 tCK ODT turn-off tAC.MIN tAC.MIN + 2 ns tAC.MAX + 0.6 ns 2.5 tCK + tAC.MAX + 1 ns ns tCK tCK ODT turn-off (Power-Down Modes) ODT to Power Down Mode Entry Latency 3 — ODT Power Down Exit Latency 8 — Note 1) 2) ns 1) ODT turn on time min. is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns (= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns. 2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is 12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns. Rev. 1.12, 2007-10 10312006-I253-V1V0 23 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 3.4 IDD Specifications and Conditions List of tables defining IDD Specifications and Conditions. TABLE 18 IDD Measurement Conditions Symbol Note1)2) Parameter 3)4)5) Operating Current 0 IDD0 One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING. Operating Current 1 One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, tRCD = tRCD.MIN, AL = 0, CL = CLMIN; CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING. IDD1 6) Precharge Standby Current IDD2N All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are SWITCHING, Databus inputs are SWITCHING. Precharge Power-Down Current Other control and address inputs are STABLE, Data bus inputs are FLOATING. IDD2P Precharge Quiet Standby Current All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE, Data bus inputs are FLOATING. IDD2Q Active Standby Current Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN; tRAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA. IDD3N Active Power-Down Current IDD3P(0) All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit); Active Power-Down Current IDD3P(1) All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit); Operating Current - Burst Read IDD4R All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCKMIN; tRAS = tRASMAX; tRP = tRPMIN; CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING; Data bus inputs are SWITCHING; IOUT = 0mA. Operating Current - Burst Write All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN; tRAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are SWITCHING; Data Bus inputs are SWITCHING; IDD4W Burst Refresh Current tCK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING. IDD5B Distributed Refresh Current tCK = tCK.MIN., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING. IDD5D Rev. 1.12, 2007-10 10312006-I253-V1V0 24 6) Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Symbol Note1)2) Parameter 3)4)5) Self-Refresh Current IDD6 CKE ≤ 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 °C max. 6) All Bank Interleave Read Current IDD7 All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control and address bus inputs are STABLE during DESELECTS. Iout = 0 mA. 1) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V 2) IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled. 3) Definitions for IDD see Table 19 4) For two rank modules: All active current measurements in the same IDD current mode. The other rank is in IDD2P Precharge Power-Down Mode. 5) For details and notes see the relevant Qimonda component data sheet. 6) IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH. TABLE 19 Definitions for IDD Parameter Description LOW VIN ≤ VIL(ac).MAX, HIGH is defined as VIN ≥ VIH(ac).MIN STABLE Inputs are stable at a HIGH or LOW level FLOATING Inputs are VREF = VDDQ /2 SWITCHING Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ signals not including mask or strobes. Rev. 1.12, 2007-10 10312006-I253-V1V0 25 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules TABLE 20 IDD Specification for HYS64T128020EDL–[2.5/3S/3.7]–B Units Note1) 548 mA 2) 628 568 mA 2) 560 520 440 mA 3) 96 96 96 mA 3) 520 480 400 mA 3) 720 560 480 mA 3) 384 360 304 mA 3)4) 120 120 120 mA 3)5) 1008 868 748 mA 2) 1008 868 748 mA 2) 948 888 848 mA 2) 104 104 104 mA 3)6) 64 64 64 mA 3)6) 1408 1248 1168 mA 2) Product Type HYS64T128020EDL–2.5–B HYS64T128020EDL–3S–B HYS64T128020EDL–3.7–B Organization 1 GB 1 GB 1 GB ×64 ×64 ×64 2 Ranks 2 Ranks 2 Ranks –2.5 –3S –3.7 648 588 688 IDD0 IDD1 IDD2N IDD2P IDD2Q IDD3N IDD3P_0 (fast) IDD3P_1 (slow) IDD4R IDD4W IDD5B IDD5D IDD6 IDD7 1) 2) 3) 4) 5) 6) Calculated values from component data. ODT disabled. IDD1, IDD4R, and IDD7, are defined with the outputs disabled. The other rank is in IDD2P Precharge Power-Down Current mode Both ranks are in the same IDD current mode Fast: MRS(12)=0 Slow: MRS(12)=1 IDD5D and IDD6 values are for 0°C ≤ TCase ≤ 85°C Rev. 1.12, 2007-10 10312006-I253-V1V0 26 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 4 SPD Codes This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands for serial presence detect. All values with XX in the table are module specific bytes which are defined during production. List of SPD Code Tables • Table 21 “HYS64T128020EDL–2.5–B” on Page 27 • Table 22 “HYS64T128020EDL–3S–B” on Page 31 • Table 23 “HYS64T128020EDL–3.7–B” on Page 35 TABLE 21 HYS64T128020EDL–2.5–B Product Type HYS64T128020EDL–2.5–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–6400S–666 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 0 Programmed SPD Bytes in EEPROM 80 1 Total number of Bytes in EEPROM 08 2 Memory Type (DDR2) 08 3 Number of Row Addresses 0D 4 Number of Column Addresses 0A 5 DIMM Rank and Stacking Information 61 6 Data Width 40 7 Not used 00 8 Interface Voltage Level 05 9 tCK @ CLMAX (Byte 18) [ns] tAC SDRAM @ CLMAX (Byte 18) [ns] 25 10 11 Error Correction Support (non-ECC, ECC) 00 12 Refresh Rate and Type 82 13 Primary SDRAM Width 10 14 Error Checking SDRAM Width 00 15 Not used 00 16 Burst Length Supported 0C 17 Number of Banks on SDRAM Device 08 18 Supported CAS Latencies 70 19 DIMM Mechanical Characteristics 01 Rev. 1.12, 2007-10 10312006-I253-V1V0 40 27 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–2.5–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–6400S–666 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 20 DIMM Type Information 04 21 DIMM Attributes 00 22 Component Attributes 07 23 30 30 tCK @ CLMAX -1 (Byte 18) [ns] tAC SDRAM @ CLMAX -1 [ns] tCK @ CLMAX -2 (Byte 18) [ns] tAC SDRAM @ CLMAX -2 [ns] tRP.MIN [ns] tRRD.MIN [ns] tRCD.MIN [ns] tRAS.MIN [ns] 31 Module Density per Rank 80 32 17 12 38 tAS.MIN and tCS.MIN [ns] tAH.MIN and tCH.MIN [ns] tDS.MIN [ns] tDH.MIN [ns] tWR.MIN [ns] tWTR.MIN [ns] tRTP.MIN [ns] 39 Analysis Characteristics 00 40 06 45 tRC and tRFC Extension tRC.MIN [ns] tRFC.MIN [ns] tCK.MAX [ns] tDQSQ.MAX [ns] tQHS.MAX [ns] 46 PLL Relock Time 00 47 TCASE.MAX Delta / ∆T4R4W Delta 5F 48 Psi(T-A) DRAM 58 49 ∆T0 (DT0) 53 50 ∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM) 3B 51 ∆T2P (DT2P) 27 52 ∆T3N (DT3N) 2A 24 25 26 27 28 29 33 34 35 36 37 41 42 43 44 Rev. 1.12, 2007-10 10312006-I253-V1V0 45 3D 50 3C 28 3C 2D 25 05 3C 1E 1E 3C 7F 80 14 1E 28 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–2.5–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–6400S–666 JEDEC SPD Revision Rev. 1.2 Byte# HEX Description 53 ∆T3P.fast (DT3P fast) 43 54 ∆T3P.slow (DT3P slow) 1E 55 ∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W) 54 56 ∆T5B (DT5B) 22 57 ∆T7 (DT7) 42 58 Psi(ca) PLL 00 59 Psi(ca) REG 00 60 ∆TPLL (DTPLL) 00 61 ∆TREG (DTREG) / Toggle Rate 00 62 SPD Revision 12 63 Checksum of Bytes 0-62 22 64 Manufacturer’s JEDEC ID Code (1) 7F 65 Manufacturer’s JEDEC ID Code (2) 7F 66 Manufacturer’s JEDEC ID Code (3) 7F 67 Manufacturer’s JEDEC ID Code (4) 7F 68 Manufacturer’s JEDEC ID Code (5) 7F 69 Manufacturer’s JEDEC ID Code (6) 51 70 Manufacturer’s JEDEC ID Code (7) 00 71 Manufacturer’s JEDEC ID Code (8) 00 72 Module Manufacturer Location xx 73 Product Type, Char 1 36 74 Product Type, Char 2 34 75 Product Type, Char 3 54 76 Product Type, Char 4 31 77 Product Type, Char 5 32 78 Product Type, Char 6 38 79 Product Type, Char 7 30 80 Product Type, Char 8 32 81 Product Type, Char 9 30 82 Product Type, Char 10 45 83 Product Type, Char 11 44 84 Product Type, Char 12 4C 85 Product Type, Char 13 32 Rev. 1.12, 2007-10 10312006-I253-V1V0 29 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–2.5–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–6400S–666 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 86 Product Type, Char 14 2E 87 Product Type, Char 15 35 88 Product Type, Char 16 42 89 Product Type, Char 17 20 90 Product Type, Char 18 20 91 Module Revision Code 0x 92 Test Program Revision Code xx 93 Module Manufacturing Date Year xx 94 Module Manufacturing Date Week xx 95 - 98 Module Serial Number xx 99 - 127 Not used 00 128 255 FF Blank for customer use Rev. 1.12, 2007-10 10312006-I253-V1V0 30 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules TABLE 22 HYS64T128020EDL–3S–B Product Type HYS64T128020EDL–3S–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–5300S–555 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 0 Programmed SPD Bytes in EEPROM 80 1 Total number of Bytes in EEPROM 08 2 Memory Type (DDR2) 08 3 Number of Row Addresses 0D 4 Number of Column Addresses 0A 5 DIMM Rank and Stacking Information 61 6 Data Width 40 7 Not used 00 8 Interface Voltage Level 05 9 30 10 tCK @ CLMAX (Byte 18) [ns] tAC SDRAM @ CLMAX (Byte 18) [ns] 11 Error Correction Support (non-ECC, ECC) 00 12 Refresh Rate and Type 82 13 Primary SDRAM Width 10 14 Error Checking SDRAM Width 00 15 Not used 00 16 Burst Length Supported 0C 17 Number of Banks on SDRAM Device 08 18 Supported CAS Latencies 38 19 DIMM Mechanical Characteristics 01 20 DIMM Type Information 04 45 21 DIMM Attributes 00 22 Component Attributes 07 23 tCK @ CLMAX -1 (Byte 18) [ns] tAC SDRAM @ CLMAX -1 [ns] tCK @ CLMAX -2 (Byte 18) [ns] tAC SDRAM @ CLMAX -2 [ns] tRP.MIN [ns] tRRD.MIN [ns] tRCD.MIN [ns] 3D 24 25 26 27 28 29 Rev. 1.12, 2007-10 10312006-I253-V1V0 50 50 60 3C 28 3C 31 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–3S–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–5300S–555 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 30 tRAS.MIN [ns] 2D 31 Module Density per Rank 80 32 17 38 tAS.MIN and tCS.MIN [ns] tAH.MIN and tCH.MIN [ns] tDS.MIN [ns] tDH.MIN [ns] tWR.MIN [ns] tWTR.MIN [ns] tRTP.MIN [ns] 39 Analysis Characteristics 00 40 45 tRC and tRFC Extension tRC.MIN [ns] tRFC.MIN [ns] tCK.MAX [ns] tDQSQ.MAX [ns] tQHS.MAX [ns] 46 PLL Relock Time 00 47 TCASE.MAX Delta / ∆T4R4W Delta 5D 48 Psi(T-A) DRAM 58 49 ∆T0 (DT0) 43 50 ∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM) 32 51 ∆T2P (DT2P) 27 52 ∆T3N (DT3N) 24 53 ∆T3P.fast (DT3P fast) 39 54 ∆T3P.slow (DT3P slow) 1E 55 ∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W) 48 33 34 35 36 37 41 42 43 44 20 27 10 3C 1E 1E 06 3C 7F 80 18 22 56 ∆T5B (DT5B) 21 57 ∆T7 (DT7) 34 58 Psi(ca) PLL 00 59 Psi(ca) REG 00 60 ∆TPLL (DTPLL) 00 61 ∆TREG (DTREG) / Toggle Rate 00 62 SPD Revision 12 Rev. 1.12, 2007-10 10312006-I253-V1V0 32 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–3S–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–5300S–555 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 63 Checksum of Bytes 0-62 12 64 Manufacturer’s JEDEC ID Code (1) 7F 65 Manufacturer’s JEDEC ID Code (2) 7F 66 Manufacturer’s JEDEC ID Code (3) 7F 67 Manufacturer’s JEDEC ID Code (4) 7F 68 Manufacturer’s JEDEC ID Code (5) 7F 69 Manufacturer’s JEDEC ID Code (6) 51 70 Manufacturer’s JEDEC ID Code (7) 00 71 Manufacturer’s JEDEC ID Code (8) 00 72 Module Manufacturer Location xx 73 Product Type, Char 1 36 74 Product Type, Char 2 34 75 Product Type, Char 3 54 76 Product Type, Char 4 31 77 Product Type, Char 5 32 78 Product Type, Char 6 38 79 Product Type, Char 7 30 80 Product Type, Char 8 32 81 Product Type, Char 9 30 82 Product Type, Char 10 45 83 Product Type, Char 11 44 84 Product Type, Char 12 4C 85 Product Type, Char 13 33 86 Product Type, Char 14 53 87 Product Type, Char 15 42 88 Product Type, Char 16 20 89 Product Type, Char 17 20 90 Product Type, Char 18 20 91 Module Revision Code 1x 92 Test Program Revision Code xx 93 Module Manufacturing Date Year xx 94 Module Manufacturing Date Week xx 95 - 98 Module Serial Number xx Rev. 1.12, 2007-10 10312006-I253-V1V0 33 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–3S–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–5300S–555 JEDEC SPD Revision Rev. 1.2 Byte# HEX Description 99 - 127 Not used 00 128 255 FF Blank for customer use Rev. 1.12, 2007-10 10312006-I253-V1V0 34 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules TABLE 23 HYS64T128020EDL–3.7–B Product Type HYS64T128020EDL–3.7–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–4200S–444 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 0 Programmed SPD Bytes in EEPROM 80 1 Total number of Bytes in EEPROM 08 2 Memory Type (DDR2) 08 3 Number of Row Addresses 0D 4 Number of Column Addresses 0A 5 DIMM Rank and Stacking Information 61 6 Data Width 40 7 Not used 00 8 Interface Voltage Level 05 9 3D 10 tCK @ CLMAX (Byte 18) [ns] tAC SDRAM @ CLMAX (Byte 18) [ns] 11 Error Correction Support (non-ECC, ECC) 00 12 Refresh Rate and Type 82 13 Primary SDRAM Width 10 14 Error Checking SDRAM Width 00 15 Not used 00 16 Burst Length Supported 0C 17 Number of Banks on SDRAM Device 08 18 Supported CAS Latencies 38 19 DIMM Mechanical Characteristics 00 20 DIMM Type Information 04 50 21 DIMM Attributes 00 22 Component Attributes 07 23 tCK @ CLMAX -1 (Byte 18) [ns] tAC SDRAM @ CLMAX -1 [ns] tCK @ CLMAX -2 (Byte 18) [ns] tAC SDRAM @ CLMAX -2 [ns] tRP.MIN [ns] tRRD.MIN [ns] tRCD.MIN [ns] 3D 24 25 26 27 28 29 Rev. 1.12, 2007-10 10312006-I253-V1V0 50 50 60 3C 28 3C 35 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–3.7–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–4200S–444 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 30 tRAS.MIN [ns] 2D 31 Module Density per Rank 80 32 22 38 tAS.MIN and tCS.MIN [ns] tAH.MIN and tCH.MIN [ns] tDS.MIN [ns] tDH.MIN [ns] tWR.MIN [ns] tWTR.MIN [ns] tRTP.MIN [ns] 39 Analysis Characteristics 00 40 45 tRC and tRFC Extension tRC.MIN [ns] tRFC.MIN [ns] tCK.MAX [ns] tDQSQ.MAX [ns] tQHS.MAX [ns] 46 PLL Relock Time 00 47 TCASE.MAX Delta / ∆T4R4W Delta 59 48 Psi(T-A) DRAM 60 49 ∆T0 (DT0) 3F 50 ∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM) 2A 51 ∆T2P (DT2P) 2B 52 ∆T3N (DT3N) 20 53 ∆T3P.fast (DT3P fast) 35 54 ∆T3P.slow (DT3P slow) 21 55 ∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W) 40 33 34 35 36 37 41 42 43 44 25 37 10 3C 1E 1E 06 3C 7F 80 1E 28 56 ∆T5B (DT5B) 22 57 ∆T7 (DT7) 31 58 Psi(ca) PLL 00 59 Psi(ca) REG 00 60 ∆TPLL (DTPLL) 00 61 ∆TREG (DTREG) / Toggle Rate 00 62 SPD Revision 12 Rev. 1.12, 2007-10 10312006-I253-V1V0 36 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–3.7–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–4200S–444 JEDEC SPD Revision Rev. 1.2 Byte# Description HEX 63 Checksum of Bytes 0-62 42 64 Manufacturer’s JEDEC ID Code (1) 7F 65 Manufacturer’s JEDEC ID Code (2) 7F 66 Manufacturer’s JEDEC ID Code (3) 7F 67 Manufacturer’s JEDEC ID Code (4) 7F 68 Manufacturer’s JEDEC ID Code (5) 7F 69 Manufacturer’s JEDEC ID Code (6) 51 70 Manufacturer’s JEDEC ID Code (7) 00 71 Manufacturer’s JEDEC ID Code (8) 00 72 Module Manufacturer Location xx 73 Product Type, Char 1 36 74 Product Type, Char 2 34 75 Product Type, Char 3 54 76 Product Type, Char 4 31 77 Product Type, Char 5 32 78 Product Type, Char 6 38 79 Product Type, Char 7 30 80 Product Type, Char 8 32 81 Product Type, Char 9 30 82 Product Type, Char 10 45 83 Product Type, Char 11 44 84 Product Type, Char 12 4C 85 Product Type, Char 13 33 86 Product Type, Char 14 2E 87 Product Type, Char 15 37 88 Product Type, Char 16 42 89 Product Type, Char 17 20 90 Product Type, Char 18 20 91 Module Revision Code 3x 92 Test Program Revision Code xx 93 Module Manufacturing Date Year xx 94 Module Manufacturing Date Week xx 95 - 98 Module Serial Number xx Rev. 1.12, 2007-10 10312006-I253-V1V0 37 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Product Type HYS64T128020EDL–3.7–B Organization 1 GByte ×64 2 Ranks (×16) Label Code PC2–4200S–444 JEDEC SPD Revision Rev. 1.2 Byte# HEX Description 99 - 127 Not used 00 128 255 FF Blank for customer use Rev. 1.12, 2007-10 10312006-I253-V1V0 38 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 5 Package Outlines FIGURE 5 Package Outline Raw Card A L-DIM-200-31 -!8 $ETAIL OF CONTACTS -). $RAWING ACCORDING TO )3/ 'ENERAL TOLERANCES $IMENSIONS IN MM )32B/B',0BBBB Notes 1. Thermal Sensor (Optional) 2. SPD or Combidevice (if used then no Thermal Sensor needed) Rev. 1.12, 2007-10 10312006-I253-V1V0 39 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules 6 Product Type Nomenclature Qimonda’s nomenclature uses simple coding combined with some proprietary coding. Table 24 provides examples for module and component product type number as well as the field number. The detailed field description together with possible values and coding explanation is listed for modules in Table 25 and for components in Table 26. TABLE 24 Nomenclature Fields and Examples Example for Field Number 1 2 3 4 5 6 7 8 9 10 11 Micro-DIMM HYS 64 T 64/128 0 2 0 K M –5 –A DDR2 DRAM HYB 18 T 512/1G 16 0 A C –5 TABLE 25 DDR2 DIMM Nomenclature Field Description Values Coding 1 Qimonda Module Prefix HYS Constant 2 Module Data Width [bit] 64 Non-ECC 72 ECC 3 DRAM Technology T DDR2 4 Memory Density per I/O [Mbit]; Module Density1) 32 256 MByte 64 512 MByte 128 1 GByte 256 2 GByte 512 4 GByte 5 Raw Card Generation 0 .. 9 Look up table 6 Number of Module Ranks 0, 2, 4 1, 2, 4 7 Product Variations 0 .. 9 Look up table 8 Package, Lead-Free Status A .. Z Look up table 9 Module Type D SO-DIMM M Micro-DIMM R Registered U Unbuffered F Fully Buffered Rev. 1.12, 2007-10 10312006-I253-V1V0 40 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Field Description Values Coding 10 Speed Grade –19F PC2–8500 6–6–6 –1.9 PC2–8500 7–7–7 11 Die Revision –25F PC2–6400 5–5–5 –2.5 PC2–6400 6–6–6 –3 PC2–5300 4–4–4 –3S PC2–5300 5–5–5 –3.7 PC2–4200 4–4–4 –5 PC2–3200 3–3–3 –A First –B Second 1) Multiplying “Memory Density per I/O” with “Module Data Width” and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall module memory density in MBytes as listed in column “Coding”. TABLE 26 DDR2 DRAM Nomenclature Field Description Values Coding 1 Qimonda Component Prefix HYB Constant 2 Interface Voltage [V] 18 SSTL_18 3 DRAM Technology T DDR2 4 Component Density [Mbit] 256 256 Mbit 5+6 Number of I/Os 512 512 Mbit 1G 1 Gbit 2G 2 Gbit 40 ×4 80 ×8 16 ×16 7 Product Variations 0 .. 9 Look up table 8 Die Revision A First B Second 9 Package, Lead-Free Status C FBGA, lead-containing F FBGA, lead-free 10 Speed Grade Rev. 1.12, 2007-10 10312006-I253-V1V0 –19F PC2–8500 6–6–6 –1.9 PC2–8500 7–7–7 –25F PC2–6400 5–5–5 –2.5 PC2–6400 6–6–6 –3 PC2–5300 4–4–4 –3S PC2–5300 5–5–5 –3.7 PC2–4200 4–4–4 –5 PC2–3200 3–3–3 41 Internet Data Sheet HYS64T128020EDL–[2.5/3S/3.7]–B Small Outlined DDR2 SDRAM Modules Contents 1 1.1 1.2 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 2.1 Pin Configurations and Block Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 3.1 3.2 3.3 3.3.1 3.3.2 3.3.3 3.4 Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Speed Grade Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Component AC Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ODT AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDD Specifications and Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 6 Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Rev. 1.12, 2007-10 10312006-I253-V1V0 42 12 12 13 14 14 15 22 24 Internet Data Sheet Edition 2007-10 Published by Qimonda AG Gustav-Heinemann-Ring 212 D-81739 München, Germany © Qimonda AG 2007. All Rights Reserved. Legal Disclaimer The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Qimonda Office. Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. www.qimonda.com