Fairchild FDZ202P P-channel 2.5v specified powertrench bga mosfet Datasheet

FDZ202P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ202P minimizes both PCB space
This BGA MOSFET embodies a
and RDS(ON).
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
• –5.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V
RDS(ON) = 75 mΩ @ VGS = –2.5 V
• Occupies only 5 mm2 of PCB area: only 55% of the
area of SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Applications
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Battery management
• Load switch
• Ultra-low Qg x RDS(ON) figure-of-merit
• Battery protection
• High power and current handling capability
D
D
S
S
S
G
S
S
D
D
D
S
Pin 1
F202
Pin 1
D
Bottom
Top
Absolute Maximum Ratings
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
G
D
TA=25oC unless otherwise noted
Parameter
Ratings
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
–20
±12
–5.5
–20
2
–55 to +150
V
V
A
W
°C
64
8
0.7
°C/W
°C/W
°C/W
Thermal Characteristics
RθJA
RθJB
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
202P
2004 Fairchild Semiconductor Corporation
Device
FDZ202P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
FDZ202P Rev. D2 (W)
FDZ202P
January 2004
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–20
Typ
Max Units
–17
V
mV/°C
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
On Characteristics
–1
–100
100
µA
nA
nA
–0.9
3
–1.5
V
mV/°C
VGS= –4.5 V, ID= –5.5 A
VGS= –2.5 V, ID= –4.0 A
VGS= –4.5 V, ID= –5.5 A, TJ=125°C
VDS = –5 V,
ID = –5.5 A
37
57
50
15
45
75
65
mΩ
VDS = –10 V,
f = 1.0 MHz
884
pF
258
pF
103
pF
VDS = –16 V,
VGS = –12 V,
VGS = 12 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
(Note 2)
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
–0.6
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
V GS = 0 V,
(Note 2)
VDD = –6 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
12
22
ns
9
18
ns
td(off)
Turn–Off Delay Time
36
58
ns
tf
Turn–Off Fall Time
24
38
ns
Qg
Total Gate Charge
9
13
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V,
VGS = –4.5 V
ID = –5.5 A,
2
nC
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –1.7 A
Voltage
Diode Reverse Recovery Time
IF = –5.5 A,
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
–0.76
(Note 2)
–1.7
–1.2
25
26
A
V
nS
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
64°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
128°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ202P Rev D2 (W)
FDZ202P
Electrical Characteristics
FDZ202P
Dimensional Outline and Pad Layout
FDZ202P Rev D2 (W)
FDZ202P
Typical Characteristics
2
VGS = -4.5V
-3.0V
-ID, DRAIN CURRENT (A)
-3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
-2.5V
15
10
-2.0V
5
1.8
VGS = -2.5V
1.6
1.4
-3.0V
1.2
-3.5V
-4.0V
0.8
0
0
1
2
3
0
4
5
Figure 1. On-Region Characteristics.
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
1.6
ID = -5.5A
VGS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
ID = -2.8 A
0.14
0.1
TA = 125oC
0.06
TA = 25oC
0.02
-50
-25
0
25
50
75
100
125
150
1.5
2
o
TJ, JUNCTION TEMPERATURE ( C)
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
15
25oC
-IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VDS = -5V
-ID, DRAIN CURRENT (A)
-4.5V
1
125oC
10
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ202P Rev D2 (W)
FDZ202P
Typical Characteristics
1600
ID = -5.5A
VDS = -5V
f = 1MHz
VGS = 0 V
-10V
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
-15V
3
2
1200
1
CISS
800
COSS
400
CRSS
0
0
0
2
4
6
8
10
0
12
5
Figure 7. Gate Charge Characteristics.
15
20
Figure 8. Capacitance Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
50
RDS(ON) LIMIT
1ms
10ms
10
100ms
1s
1
DC
VGS = -4.5V
SINGLE PULSE
R JA = 128oC/W
0.1
TA = 25oC
0.01
0.1
1
10
S IN G LE P U LS E
R πJA = 128°C /W
T A = 25°C
40
30
20
10
0
0.001
100
VDS, DRAIN-SOURCE VOLTAGE (V)
0.01
0.1
1
10
100
1000
t 1 , TIM E (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 128 °C/W
0.2
0.1
0.1
P(pk)
t1
0.05
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ202P Rev D2 (W)
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I7
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