High Performance Schottky Diode for Transient Suppression Technical Data HSMS-2700/-2702 -270B/-270C Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification (Top View) • Picosecond Switching SINGLE 3 • Low Capacitance Description SERIES 3 • Lead-free Option Available Applications 1 0, B 2 1 2, C 2 RF and computer designs that require circuit protection, highspeed switching, and voltage clamping. The HSMS-2700 series of Schottky diodes, commonly referred to as clipping /clamping diodes, are optimal for circuit and waveshape preservation applications with high speed switching. Ultra-low series resistance, R S, makes them ideal for protecting sensitive circuit elements against higher current transients carried on data lines. With picosecond switching, the HSMS-270x can respond to noise spikes with rise times as fast as 1 ns. Low capacitance minimizes waveshape loss that causes signal degradation. HSMS-270x DC Electrical Specifications, TA = +25°C [1] Part Package Number Marking Lead HSMS- Code [2] Code Configuration -2700 0 J0 -270B 2 J2 -270C SOT-23 Single B -2702 SOT-323 (3-lead SC-70) 550 [3] 15 [4] 6.7 [5] 0.65 100 [6] SOT-23 Series C Package Maximum Minimum Typical Maximum Forward Breakdown Typical Series Eff. Carrier Voltage Voltage Capacitance Resistance Lifetime VF (mV) VBR (V) C T (pF) R S (Ω) τ (ps) SOT-323 (3-lead SC-70) Notes: 1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board. 2. Package marking code is laser marked. 3. I F = 100 mA; 100% tested 4. I F = 100 µA; 100% tested 5. VF = 0; f =1 MHz 6. Measured with Karkauer method at 20 mA; guaranteed by design. 2 Absolute Maximum Ratings, TA= 25ºC Symbol IF I F-peak PT PINV TJ TSTG θ JC Parameter DC Forward Current Peak Surge Current (1µs pulse) Total Power Dissipation Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance, junction to lead Absolute Maximum [1] Unit HSMS-2700/-2702 HSMS-270B/-270C 350 1.0 250 15 150 -65 to 150 500 750 1.0 825 15 150 -65 to 150 150 mA A mW V °C °C °C/W Note: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. Linear and Non-linear SPICE Model 0.08 pF 2 nH RS SPICE model SPICE Parameters Parameter BV CJO EG IBV IS N RS PB PT M Unit V pF eV A A Ω V Value 25 6.7 0.55 10E-4 1.4E-7 1.04 0.65 0.6 2 0.5 3 Typical Performance I F – FORWARD CURRENT (mA) I F – FORWARD CURRENT (mA) 100 10 1 0.1 TA = +75°C TA = +25°C TA = –25°C 0.01 0 0.1 0.2 0.3 0.4 0.5 100 10 1 0.1 TA = +75°C TA = +25°C TA = –25°C 0.01 0.6 0 VF – FORWARD VOLTAGE (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF – FORWARD VOLTAGE (V) Figure 1. Forward Current vs. Forward Voltage at Temperature for HSMS-2700 and HSMS-2702. 160 Max. safe junction temp. 100 80 60 40 20 0 6 5 4 3 2 1 0 150 300 450 600 750 IF – FORWARD CURRENT (mA) Figure 4. Junction Temperature vs. Current as a Function of Heat Sink Temperature for HSMS-270B and HSMS-270C. Note: Data is calculated from SPICE parameters. 140 TA = +75°C TA = +25°C 120 TA = –25°C 100 80 60 40 20 0 0 50 100 150 200 250 300 350 Figure 3. Junction Temperature vs. Forward Current as a Function of Heat Sink Temperature for the HSMS-2700 and HSMS-2702. Note: Data is calculated from SPICE parameters. 7 140 TA = +75°C TA = +25°C 120 T = –25°C A 160 Max. safe junction temp. IF – FORWARD CURRENT (mA) Figure 2. Forward Current vs. Forward Voltage at Temperature for HSMS-270B and HSMS-270C. CT – TOTAL CAPACITANCE (pF) TJ – JUNCTION TEMPERATURE (°C) TJ – JUNCTION TEMPERATURE (°C) 500 300 0 5 10 15 VF – REVERSE VOLTAGE (V) Figure 5. Total Capacitance vs. Reverse Voltage. 20 4 Package Dimensions Device Orientation Outline SOT-23 For Outlines SOT-23/323 REEL 1.02 (0.040) 0.89 (0.035) 0.54 (0.021) 0.37 (0.015) PACKAGE MARKING CODE (XX) DATE CODE (X) 3 1.40 (0.055) 1.20 (0.047) XXX CARRIER TAPE 2 1 0.60 (0.024) 0.45 (0.018) 2.65 (0.104) 2.10 (0.083) USER FEED DIRECTION 2.04 (0.080) 1.78 (0.070) COVER TAPE TOP VIEW TOP VIEW 0.152 (0.006) 0.066 (0.003) 3.06 (0.120) 2.80 (0.110) END VIEW 4 mm 1.02 (0.041) 0.85 (0.033) 8 mm 0.69 (0.027) 0.45 (0.018) 0.10 (0.004) 0.013 (0.0005) SIDE VIEW ABC ABC ABC END VIEW Note: "AB" represents package marking code. "C" represents date code. DIMENSIONS ARE IN MILLIMETERS (INCHES) Tape Dimensions and Product Orientation For Outline SOT-23 P P2 D E P0 F W D1 t1 Ko 9° MAX 13.5° MAX 8° MAX B0 A0 DESCRIPTION ABC SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.05 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 ± 0.002 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 + 0.10 4.00 ± 0.10 1.75 ± 0.10 0.059 + 0.004 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 +0.30 –0.10 0.229 ± 0.013 0.315 +0.012 –0.004 0.009 ± 0.0005 DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 5 Package Dimensions Outline SOT-323 (SC-70 3 Lead) PACKAGE MARKING CODE (XX) 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) XXX DATE CODE (X) 1.35 (0.053) 1.15 (0.045) 0.650 BSC (0.025) 0.425 (0.017) TYP. 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.30 REF. 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 10° 0.20 (0.008) 0.10 (0.004) 0.30 (0.012) 0.10 (0.004) DIMENSIONS ARE IN MILLIMETERS (INCHES) Tape Dimensions and Product Orientation For Outline SOT-323 (SC-70 3 Lead) P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 8° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.254 ± 0.02 0.315 ± 0.012 0.0100 ± 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 6 Applications Information Schottky Diode Fundamentals The HSMS-270x series of clipping/ clamping diodes are Schottky devices. A Schottky device is a rectifying, metal-semiconductor contact formed between a metal and an n-doped or a p-doped semiconductor. When a metalsemiconductor junction is formed, free electrons flow across the junction from the semiconductor and fill the free-energy states in the metal. This flow of electrons creates a depletion or potential across the junction. The difference in energy levels between semiconductor and metal is called a Schottky barrier. P-doped, Schottky-barrier diodes excel at applications requiring ultra low turn-on voltage (such as zero-biased RF detectors). But their very low, breakdown-voltage and high series-resistance make them unsuitable for the clipping and clamping applications involving high forward currents and high reverse voltages. Therefore, this discussion will focus entirely on n-doped Schottky diodes. cross the junction. The reverse leakage current will be in the nanoampere to microampere range, depending upon the diode type, the reverse voltage, and the temperature. In contrast to a conventional p-n junction, current in the Schottky diode is carried only by majority carriers (electrons). Because no minority-carrier (hole) charge storage effects are present, Schottky diodes have carrier lifetimes of less than 100 ps. This extremely fast switching time makes the Schottky diode an ideal rectifier at frequencies of 50 GHz and higher. Another significant difference between Schottky and p-n diodes is the forward voltage drop. Schottky diodes have a threshold of typically 0.3 V in comparison to that of 0.6 V in p-n junction diodes. See Figure 6. P N METAL N CAPACITANCE Under a forward bias (metal connected to positive in an n-doped Schottky), or forward voltage, VF, there are many electrons with enough thermal energy to cross the barrier potential into the metal. Once the applied bias exceeds the built-in potential of the junction, the forward current, IF, will increase rapidly as VF increases. When the Schottky diode is reverse biased, the potential barrier for electrons becomes large; hence, there is a small probability that an electron will have sufficient thermal energy to CURRENT CAPACITANCE CURRENT 0.3V 0.6 V – + – + BIAS VOLTAGE BIAS VOLTAGE PN JUNCTION SCHOTTKY JUNCTION Figure 6. Through the careful manipulation of the diameter of the Schottky contact and the choice of metal deposited on the n-doped silicon, the important characteristics of the diode (junction capacitance, CJ ; parasitic series resistance, R S; breakdown voltage, V BR; and forward voltage, V F,) can be optimized for specific applications. The HSMS-270x series and HBAT-540x series of diodes are a case in point. Both diodes have similar barrier heights; and this is indicated by corresponding values of saturation current, I S. Yet, different contact diameters and epitaxiallayer thickness result in very different values of C J and R S. This is seen by comparing their SPICE parameters in Table 1. Table 1. HSMS-270x and HBAT-540x SPICE Parameters. Parameter HSMS270x HBAT540x BV 25 V 40 V CJ0 6.7 pF 3.0 pF EG 0.55 eV 0.55 eV IBV 10E-4 A 10E-4 A IS 1.4E-7 A 1.0E-7 A N 1.04 1.0 RS 0.65 Ω 2.4 Ω PB 0.6 V 0.6 V PT 2 2 M 0.5 0.5 At low values of IF ≤ 1 mA, the forward voltages of the two diodes are nearly identical. However, as current rises above 10 mA, the lower series resistance of the HSMS-270x allows for a much lower forward voltage. This gives the HSMS-270x a much higher current handling capability. The trade-off is a higher value of junction capacitance. The forward voltage and current plots illustrate the differences in these two Schottky diodes, as shown in Figure 7. 7 300 HSMS-270x I F – FORWARD CURRENT (mA) 100 HBAT-540x 10 1 .1 .01 0 0.1 0.2 0.3 0.4 0.5 0.6 VF – FORWARD VOLTAGE (V) Figure 7. Forward Current vs. Forward Voltage at 25°C. Consider the circuit shown in Figure 8, in which two Schottky diodes are used to protect a circuit from noise spikes on a stream of digital data. The ability of the diodes to limit the voltage spikes is related to their ability to sink the associated current spikes. The importance of current handling capacity is shown in Figure 9, where the forward voltage generated by a forward current is compared in two diodes. Because the automatic, pick-andplace equipment used to assemble these products selects dice from adjacent sites on the wafer, the two diodes which go into the HSMS-2702 or HSMS-270C (series pair) are closely matched — without the added expense of testing and binning. VF – FORWARD VOLTAGE (V) 6 current limiting Vs long cross-site cable pull-down (or pull-up) 0V voltage limited to Vs + Vd 0V – Vd Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit. nTJ –1 (1) 5 4 Rs = 7.7 Ω 2 1 1 T J n –4060 T J – 298 e IS = I0 298 (2) TJ = V F I F θ JC + TA (3) 3 2 Rs = 1.0 Ω 1 0 noisy data-spikes 11600 (V F – I F R S ) IF = IS e 0 Current Handling in Clipping/ Clamping Circuits The purpose of a clipping/clamping diode is to handle high currents, protecting delicate circuits downstream of the diode. Current handling capacity is determined by two sets of characteristics, those of the chip or device itself and those of the package into which it is mounted. Maximum reliability is obtained in a Schottky diode when the steady state junction temperature is maintained at or below 150°C, although brief excursions to higher junction temperatures can be tolerated with no significant impact upon mean-time-to-failure, MTTF. In order to compute the junction temperature, Equations (1) and (3) below must be simultaneously solved. 0.1 0.2 0.3 0.4 0.5 IF – FORWARD CURRENT (mA) Figure 9. Comparison of Two Diodes. The first is a conventional Schottky diode of the type generally used in RF circuits, with an RS of 7.7 Ω. The second is a Schottky diode of identical characteristics, save the R S of 1.0 Ω. For the conventional diode, the relatively high value of RS causes the voltage across the diode’s terminals to rise as current increases. The power dissipated in the diode heats the junction, causing R S to climb, giving rise to a runaway thermal condition. In the second diode with low R S, such heating does not take place and the voltage across the diode terminals is maintained at a low limit even at high values of current. where: IF = forward current IS = saturation current V F = forward voltage RS = series resistance TJ = junction temperature IO = saturation current at 25°C n = diode ideality factor θ JC = thermal resistance from junction to case (diode lead) = θ package + θ chip T A = ambient (diode lead) temperature Equation (1) describes the forward V-I curve of a Schottky diode. Equation (2) provides the value for the diode’s saturation current, which value is plugged into (1). Equation (3) gives the value of junction temperature as a function of power dissipated in the diode and ambient (lead) temperature. The key factors in these equations are: RS, the series resistance of the diode where heat is generated under high current conditions; θ chip, the chip thermal resistance of the Schottky die; and θ package, or the package thermal resistance. RS for the HSMS-270x family of diodes is typically 0.7 Ω and is the lowest of any Schottky diode available from Agilent. Chip thermal resistance is typically 40°C/W; the thermal resistance of the iron-alloy-leadframe, SOT-23 package is typically 460°C/W; and the thermal resistance of the copper-leadframe, SOT-323 package is typically 110°C/W. The impact of package thermal resistance on the current handling capability of these diodes can be seen in Figures 3 and 4. Here the computed values of junction temperature vs. forward current are shown for three values of ambient temperature. The SOT323 products, with their copper leadframes, can safely handle almost twice the current of the larger SOT-23 diodes. Note that the term “ambient temperature” refers to the temperature of the diode’s leads, not the air around the circuit board. It can be seen that the HSMS-270B and HSMS-270C products in the SOT-323 package will safely withstand a steady-state forward current of 550 mA when the diode’s terminals are maintained at 75°C. For pulsed currents and transient current spikes of less than one microsecond in duration, the junction does not have time to reach thermal steady state. Moreover, the diode junction may be taken to temperatures higher than 150°C for short time-periods without impacting device MTTF. Because of these factors, higher currents can be safely handled. The HSMS-270x family has the highest current handling capability of any Agilent diode. Part Number Ordering Information Part Number No. of Devices Container HSMS-2700-BLK HSMS-2700-TR1 HSMS-2700-TR2 100 3,000 10,000 Antistatic Bag 7" Reel 13" Reel HSMS-2702-BLK HSMS-2702-TR1 HSMS-2702-TR2 100 3,000 10,000 Antistatic Bag 7" Reel 13" Reel HSMS-270B-BLK HSMS-270B-TR1 HSMS-270B-TR2 100 3,000 10,000 Antistatic Bag 7" Reel 13" Reel HSMS-270C-BLK HSMS-270C-TR1 HSMS-270C-TR2 100 3,000 10,000 Antistatic Bag 7" Reel 13" Reel Note: For lead-free option, the part number will have the character "G" at the end, eg. HSMS-270x-TR2G for a 10,000 lead-free reel. www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5968-2351E March 24, 2004 5989-0473EN