DATA SHEET book, halfpage M3D071 BFG92A/X NPN 5 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X FEATURES DESCRIPTION • High power gain Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. • Low noise figure • Gold metallization ensures excellent reliability. handbook, 2 columns 4 PINNING APPLICATIONS PIN Wideband applications in the UHF and microwave range. 3 1 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MSB014 Marking code: V14. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage − − 20 V VCEO collector-emitter voltage − − 15 V IC collector current (DC) − − 25 mA Ptot total power dissipation Ts ≤ 60 °C − − 400 mW Cre feedback capacitance IC = ic = 0; VCB = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz − 11 − dB Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 2 − dB F noise figure 1998 Sep 23 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 25 mA Ptot total power dissipation Ts ≤ 60 °C; note 1 − 400 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 10 V − − 50 hFE DC current gain IC = 15 mA; VCE = 10 V 40 90 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.6 − pF nA Ce emitter capacitance IC = ic = 0; VEB = 10 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = ic = 0; VCB = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz − 11 − dB Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 2 − dB Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz − 3 − dB F noise figure Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) 1998 Sep 23 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X MBB963 - 1 800 MCD074 120 handbook, halfpage handbook, halfpage P tot (mW) h FE 600 80 400 40 200 0 0 0 50 100 150 200 0 10 20 Ts ( o C) I C (mA) 30 VCE = 10 V. Fig.3 DC current gain as a function of collector current; typical values. Fig.2 Power derating curve. MBB275 MCD075 handbook,0.6 halfpage 6 handbook, halfpage fT (GHz) C re (pF) 0.4 4 0.2 2 0 0 0 6 12 18 0 24 10 VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. 1998 Sep 23 I C (mA) 30 VCE = 10 V; Tamb = 25 °C; f = 500 MHz. IC = ic = 0; f = 1 MHz. Fig.4 20 Fig.5 4 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X MCD077 30 MCD078 30 handbook, halfpage handbook, halfpage MSG gain gain (dB) (dB) MSG G UM 20 20 G UM 10 10 0 0 5 10 0 20 25 I C (mA) 15 0 5 VCE = 10 V; f = 500 MHz. VCE = 10 V; f = 1 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. MCD079 50 10 25 20 I C (mA) 15 Gain as a function of collector current; typical values. MCD080 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 G UM 40 G UM MSG 30 30 MSG 20 20 G max G max 10 10 0 10 10 2 10 3 f (MHz) 10 0 4 10 10 VCE = 10 V; IC = 5 mA. VCE = 10 V; IC = 15 mA. Fig.8 Fig.9 Gain as a function of frequency; typical values. 1998 Sep 23 5 2 10 3 f (MHz) 10 4 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X MCD081 4 MCD082 4 handbook, halfpage handbook, halfpage f = 2 GHz F (dB) I C = 15 mA F (dB) 3 10 mA 3 5 mA 1 GHz 500 MHz 2 2 1 1 0 1 10 I C (mA) 0 10 2 10 2 10 3 f (MHz) 10 4 VCE = 10 V. VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. stability circle 1 handbook, full pagewidth 0.5 un re sta gio bl n e 2 0.2 5 OPT 10 * + j F min = 1.6 dB 0 –j MSG 23.9 dB 0.2 0.5 1 2 5 ∞ 10 10 2 dB 5 0.2 3 dB 4 dB 2 0.5 Zo = 50 Ω. Maximum stable gain = 23.9 dB. 1 MCD083 Fig.12 Common emitter noise figure circles; typical values. 1998 Sep 23 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 1 handbook, full pagewidth 0.5 2 unsta ble re gion stability circle 0.2 5 OPT 10 * +j F min = 2.1 dB 0 MSG 0.2 19.9 dB –j 1 0.5 2 5 ∞ 10 10 2.5 dB 3 dB 0.2 5 4 dB 2 0.5 1 MCD084 Zo = 50 Ω. Maximum stable gain = 19.9 dB. Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth 0.5 2 5 dB 4 dB 0.2 5 3.5 dB OPT 10 * +j F min = 3 dB 0 0.2 Gmax –j 0.5 1 2 5 ∞ 10 10 * 12.5 dB 0.2 12 dB 5 10 dB 2 0.5 1 MCD085 Zo = 50 Ω. Fig.14 Common emitter noise figure circles; typical values. 1998 Sep 23 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 + j 0.2 0 0.5 1 2 5 10 ∞ 40 MHz –j 10 5 0.2 2 0.5 1 MCD086 VCE = 10 V; IC = 15 mA. Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 45 o 135 o 180 o 40 MHz 50 40 30 20 10 _ 45 o _ 135 o VCE = 10 V; IC = 15 mA. 0o 3 GHz _ 90 o MCD072 Fig.16 Common emitter forward transmission coefficient (S21); typical values. 1998 Sep 23 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 90 o handbook, full pagewidth 45 o 135 o 3 GHz 40 MHz 180 o 0.04 0.08 0.12 0.16 0.20 0o _ 45 o _ 135 o _ 90 o VCE = 10 V; IC = 15 mA. MCD071 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 –j 10 ∞ 40 MHz 0.2 10 5 3 GHz 2 0.5 1 MCD073 VCE = 10 V; IC = 15 mA. Fig.18 Common emitter output reflection coefficient (S22); typical values. 1998 Sep 23 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X SPICE parameters for BFR90A/X die SEQUENCE No. PARAMETER SEQUENCE No. VALUE UNIT PARAMETER 36 (note 1) VJS VALUE UNIT 750.0 mV 1 IS 411.8 aA 37 (note 1) MJS 0.000 − 2 BF 102.6 − 38 FC 850.0 m 3 NF 997.2 m Note 4 VAF 62.67 V 5 IKF 3.200 A 1. These parameters have not been extracted, the default values are shown. 6 ISE 4.010 fA 7 NE 1.577 − 8 BR 18.10 − 9 NR 996.2 m 10 VAR 3.369 V 11 IKR 1.281 A 12 ISC 279.9 aA 13 NC 1.075 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 1.164 Ω 18 RC 2.320 Ω 19 (note 1) XTB 0.000 − 20 (note 1) EG 1.110 eV 21 (note 1) XTI 3.000 − 22 CJE 890.5 fF 23 VJE 600.0 mV 24 MJE 258.5 m 25 TF 15.49 ps 26 XTF 39.14 − 27 VTF 2.152 V 28 ITF 213.7 mA Cbe 84 fF 29 PTF 0.000 deg Ccb 17 fF 30 CJC 546.5 fF Cce 191 fF 31 VJC 380.8 mV L1 0.12 nH 32 MJC 202.9 m L2 0.21 nH 33 XCJC 150.0 m L3 0.06 nH 34 TR 5.618 ns LB 0.95 nH 35 (note 1) CJS 0.000 F LE 0.40 nH 1998 Sep 23 C cb handbook, halfpage L1 LB B L2 B' C' C E' C be Cce LE MBC964 L3 E QLB = 50; QLE = 50. QLB,E (f) = QLB,E √ (f/fc). fc = scaling frequency = 100 MHz. Fig.19 Package equivalent circuit SOT143B. List of components (see Fig.19) DESIGNATION 10 VALUE UNIT Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1998 Sep 23 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998 Sep 23 Document order number: 9397 750 04344