CYSTEKEC MTC5806Q8 N- and p-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 1/9
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806Q8
Description
The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
MTC5806Q8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTC5806Q8
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 2)
BVDSS
VGS
ID
ID
IDM
Pd
(Note 1)
(Note 1)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Tj
Tstg
Rth,ja
Limits
N-channel
P-channel
60
±20
4.5
4
20
-55
±20
-3.5
-3
-20
2
0.016
-55~+150
-55~+150
62.5
Unit
V
V
A
A
A
W
W / °C
°C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
60
1.0
-
55
42
14
3.0
±100
1
10
85
58
-
V
V
nA
μA
μA
650
80
35
11
8
19
6
12
2.4
2.6
20
18
35
15
16
-
-
1.0
1.3
2.6
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*IS
*ISM
-
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=48V, VGS=0
VDS=40V, VGS=0, Tj=55°C
ID=4A, VGS=4.5V
ID=4.5A, VGS=10V
VDS=10V, ID=4.5A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=30V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=30V, ID=4.5A, VGS=10V
V
A
A
VGS=0V, IS=1.3A
mΩ
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC5806Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 3/9
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
-55
-1.0
-
70
100
9
-3.0
±100
-1
-10
90
135
-
V
V
nA
μA
μA
630
81
33
6
8
17
11
11
2.1
2.5
13
18
31
20
15
-
-
-1.0
-1.3
-2.6
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*IS
*ISM
-
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-48V, VGS=0
VDS=-40V, VGS=0, Tj=55°C
ID=-3.5A, VGS=-10V
ID=-3A, VGS=-4.5V
VDS=-5V, ID=-3.5A
pF
VDS=-30V, VGS=0, f=1MHz
mΩ
ns
ns
VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-27V, ID=-3.5A, VGS=-10V
V
VGS=0V, IS=-1.3A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC5806Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 4/9
N-channel Characteristic Curves
MTC5806Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 5/9
N-channel Characteristic Curves(Cont.)
MTC5806Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 6/9
P-channel Characteristic Curves
MTC5806Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 7/9
P-channel Characteristic Curves(Cont.)
MTC5806Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 8/9
Test Circuit and Waveforms
MTC5806Q8
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
I
C
B
Marking:
Device Name
5806SS
Date Code
□□□□
H
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; pure tin plated plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC5806Q8
CYStek Product Specification
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