CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free package Equivalent Circuit MTC5806Q8 Outline SOP-8 G：Gate S：Source D：Drain MTC5806Q8 CYStek Product Specification Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 2) BVDSS VGS ID ID IDM Pd (Note 1) (Note 1) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Tj Tstg Rth,ja Limits N-channel P-channel 60 ±20 4.5 4 20 -55 ±20 -3.5 -3 -20 2 0.016 -55~+150 -55~+150 62.5 Unit V V A A A W W / °C °C °C °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit 60 1.0 - 55 42 14 3.0 ±100 1 10 85 58 - V V nA μA μA 650 80 35 11 8 19 6 12 2.4 2.6 20 18 35 15 16 - - 1.0 1.3 2.6 *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - Test Conditions S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=48V, VGS=0 VDS=40V, VGS=0, Tj=55°C ID=4A, VGS=4.5V ID=4.5A, VGS=10V VDS=10V, ID=4.5A pF VDS=25V, VGS=0, f=1MHz ns VDS=30V, ID=1A, VGS=10V, RG=6Ω nC VDS=30V, ID=4.5A, VGS=10V V A A VGS=0V, IS=1.3A mΩ *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 3/9 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit -55 -1.0 - 70 100 9 -3.0 ±100 -1 -10 90 135 - V V nA μA μA 630 81 33 6 8 17 11 11 2.1 2.5 13 18 31 20 15 - - -1.0 -1.3 -2.6 *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - Test Conditions S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-48V, VGS=0 VDS=-40V, VGS=0, Tj=55°C ID=-3.5A, VGS=-10V ID=-3A, VGS=-4.5V VDS=-5V, ID=-3.5A pF VDS=-30V, VGS=0, f=1MHz mΩ ns ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-27V, ID=-3.5A, VGS=-10V V VGS=0V, IS=-1.3A A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 4/9 N-channel Characteristic Curves MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 5/9 N-channel Characteristic Curves(Cont.) MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 6/9 P-channel Characteristic Curves MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 7/9 P-channel Characteristic Curves(Cont.) MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 8/9 Test Circuit and Waveforms MTC5806Q8 CYStek Product Specification Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A I C B Marking: Device Name 5806SS Date Code □□□□ H J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; pure tin plated plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC5806Q8 CYStek Product Specification