Pan Jit ER1000FCT Superfast recovery rectifier Datasheet

ER1000FCT~ER1006FCT
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
50 to 600 Volts
10 Amperes
CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
.177(4.5)
.137(3.5)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
.027(.67)
.022(.57)
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
S YMB OL
E R1 00 0 F C T E R1 0 01 F C T E R1 00 1 A F C T E R10 02 F C T E R1 00 3F C T E R1 00 4F C T E R1 00 6F C T
UNITS
M a xi m um Re c urre nt P e a k Re ve rs e Vo lta g e
V RRM
50
100
150
200
300
400
600
V
M a xi m um RM S Vo lta g e
V RMS
35
70
105
140
210
280
420
V
M a xi m um D C B lo ck i ng Vo lta g e
V DC
50
100
150
200
300
400
600
V
M a xi m um A ve ra g e F o rwa rd C urre nt a t Tc =1 0 0 O C
IF (AV )
1 0 .0
A
P e a k F o rwa rd S urg e C urre nt, 8 .3 ms si ng le ha lf s i ne -wa ve
s up e ri m p o se d o n ra te d lo a d (JE D E C me tho d )
IF S M
150
A
M a xi m um F o rwa rd Vo lta g e a t 5 A , p e r e le me nt
VF
M a xi m um D C Re ve rs e C urre nt a t T J =2 5 O C
Ra te d D C B lo cki ng Vo lta g e T J =1 0 0 O C
IR
M a xi m um Re ve rse Re co ve ry Ti m e (No te 2 )
t rr
Typ i ca l Juncti o n c a p a ci ta nce (No te 1 )
CJ
62
R θ JC
3 .0
T J ,T STG
-5 5 to +1 5 0
0 .9 5
1 .3 0
1.7
1 .0
500
35
V
μA
50
ns
pF
O
Typ i c a l The rm a l Re s i s ta nc e
Op e ra ti ng J uncti o n a nd S to ra g e Te m p e ra ture Ra ng e
C /
W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
May 5,2010-REV.02
PAGE . 1
ER1000FCT~ER1006FCT
10
8
6
4
LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
2
0
0
20
40
60
80
100
120
140
160
PEAK FORWARD SURGE CURRENT,
AVERAGE FORWARD CURRENT,
AMPERES
RATING AND CHARACTERISTIC CURVES
150
125
8.3ms Single
Half Since-Wave
JEDEC Method
100
75
50
25
0
O
1
2
5
CASE TEMPERAURE, C
10
20
50
100
NO. OF CYCLE AT 60HZ
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
TJ = 125°C
Per Diode
1
TJ = 75°C
TJ = 25°C
0.1
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, (%)
INSTNTANEOUS FORWARD CURRENT
AMPERES
INSTANTANEOUS REVERSE
CURRENT, μA
40
10
300-400V
200V
600V
1
O
T J =25 C
Pulse Width=200us
.1
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
May 5,2010-REV.02
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
PAGE . 2
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