Sirectifier HUR3020CT High-performance wide temperature range ultra fast recovery epitaxial diode Datasheet

HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
200
300
HUR3020CT
HUR3030CT
Symbol
VRRM
V
200
300
Test Conditions
IFRMS
IFAVM
TC=135oC; rectangular, d=0.5
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Ptot
TC=25oC
Md
mounting torque
typical
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Maximum Ratings
Unit
35
2 x 15
A
140
A
0.8
mJ
0.3
A
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Weight
Dim.
o
C
95
W
0.4...0.6
Nm
2
g
HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
100
0.5
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
1.21
1.68
V
RthJC
RthCH
trr
IRM
1.6
0.5
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
30
o
VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C
K/W
ns
2.7
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
40
20
500
TVJ = 100°C
nC
A
VR = 150V
400
30
IF
TVJ = 100°C
A
VR = 150V
IF = 30A
15
IF = 15A
IF = 30A
300
TVJ = 100°C
20
IRM
Qr
TVJ = 150°C
IF = 7.5A
IF = 15A
TVJ = 25°C
10
IF = 7.5A
200
10
5
100
0
0
V
1
0
100
2
0
A/us 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
1.4
80
trr
1.2
0.85
TVJ = 100°C
IF = 15A
12
VFR
IF = 30A
us
0.80
tfr
tfr
VFR
10
IF = 15A
1.0
600 A/us
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
VR = 150V
60
400
V
70
Kf
200
14
TVJ = 100°C
ns
0
0.75
IF = 7.5A
IRM
50
8
0.70
40
6
0.65
Qr
0.8
0.6
30
0
40
80
120 °C 160
4
0
TVJ
200
400
600
800 1000
A/us
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
10
0.60
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
1
2
3
ZthJC
0.1
0.01
0.001
0.00001
0
0.0001
0.001
0.01
s
0.1
t
Fig. 7 Transient thermal resistance junction to case
1
Rthi (K/W)
ti (s)
0.908
0.35
0.342
0.005
0.0003
0.017
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