ON MUN5116DW1T1G Dual bias resistor transistor Datasheet

MUN5111DW1T1G Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1G series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
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(3)
R1
Q2
R2
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(4)
Value
Unit
Collector-Base Voltage
VCBO
−50
Vdc
Collector-Emitter Voltage
VCEO
−50
Vdc
IC
−100
mAdc
Collector Current
(5)
MARKING DIAGRAM
6
xx M G
G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Symbol
Max
Unit
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
1
xx
M
G
= Device Code (Refer to page 2)
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
(6)
1
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Symbol
R1
SC−88 / SOT−363
CASE 419B
STYLE 1
MAXIMUM RATINGS
Rating
(1)
R2
Q1
Features
•
•
•
•
(2)
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
1
Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1G Series
ORDERING INFORMATION, DEVICE MARKINGS AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping†
MUN5111DW1T1G
SOT−363
(Pb−Free)
0A
10
10
3000/Tape & Reel
MUN5112DW1T1G
SOT−363
(Pb−Free)
0B
22
22
3000/Tape & Reel
MUN5113DW1T1G
SOT−363
(Pb−Free)
0C
47
47
3000/Tape & Reel
MUN5114DW1T1G
SOT−363
(Pb−Free)
0D
10
47
3000/Tape & Reel
MUN5115DW1T1G
SOT−363
(Pb−Free)
0E
10
∞
3000/Tape & Reel
MUN5116DW1T1G
SOT−363
(Pb−Free)
0F
4.7
∞
3000/Tape & Reel
MUN5130DW1T1G
SOT−363
(Pb−Free)
0G
1.0
1.0
3000/Tape & Reel
MUN5131DW1T1G
SOT−363
(Pb−Free)
0H
2.2
2.2
3000/Tape & Reel
MUN5132DW1T1G
SOT−363
(Pb−Free)
0J
4.7
4.7
3000/Tape & Reel
MUN5133DW1T1G
SOT−363
(Pb−Free)
0K
4.7
47
3000/Tape & Reel
MUN5134DW1T1G
SOT−363
(Pb−Free)
0L
22
47
3000/Tape & Reel
MUN5135DW1T1G
SOT−363
(Pb−Free)
0M
2.2
47
3000/Tape & Reel
MUN5136DW1T1G
SOT−363
(Pb−Free)
0N
100
100
3000/Tape & Reel
MUN5137DW1T1G
SOT−363
(Pb−Free)
0P
47
22
3000/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MUN5111DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = −50 V, IE = 0)
ICBO
−
−
−100
nAdc
Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0)
ICEO
−
−
−500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
mAdc
Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0)
V(BR)CBO
−50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0)
V(BR)CEO
−50
−
−
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = −6.0 V, IC = 0)
MUN5111DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage
(IC = −10 mA, IB = −0.3 mA)
(IC = −10 mA, IB = −5 mA)
(IC = −10 mA, IB = −1 mA)
DC Current Gain
(VCE = −10 V, IC = −5.0 mA)
MUN5111DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5137DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5111DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
VCE(sat)
hFE
Vdc
MUN5111DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
ON CHARACTERISTICS (Note 4) (Continued)
Output Voltage (on)
(VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −5.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −4.0 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW)
MUN5111DW1T1G
MUN5112DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5113DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
MUN5111DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5130DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5137DW1T1G
VOL
VOH
Vdc
Vdc
Input Resistor
MUN5111DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
Resistor Ratio
MUN5111DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
R1/R2
0.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
0.038
0.8
1.7
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.12
0.47
0.047
1.0
2.15
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
0.056
1.2
2.6
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
kW
MUN5111DW1T1G Series
ALL MUN5111DW1T1G SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve − ALL DEVICES
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5
150
MUN5111DW1T1G Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1G
TA=-25°C
0.1
25°C
75°C
0.01
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
100
10
50
-25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
4
25°C
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=-25°C
10
1
0.1
0.01
0.001
50
VO = 5 V
0
1
2
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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6
50
10
MUN5111DW1T1G Series
1000
10
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1G
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
0.01
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
0
20
IC, COLLECTOR CURRENT (mA)
1
50
40
10
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
10
1
0.1
0.01
0.001
50
Figure 9. Output Capacitance
VO = 5 V
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
9
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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7
MUN5111DW1T1G Series
1
1000
IC/IB = 10
TA=-25°C
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1G
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
0.6
0.4
0.2
0
0
-25°C
1
0.1
0.01
Figure 14. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
10
Figure 15. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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8
MUN5111DW1T1G Series
1
180
IC/IB = 10
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1G
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
-25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
1
2
4
6
Figure 17. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=-25°C
75°C
1
0
10
8
10
Figure 20. Output Current versus Input Voltage
10
0.1
25°C
-25°C
1
50
Figure 19. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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9
MUN5111DW1T1G Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
10
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 24. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
1
75°C
0.1
0
9
10
Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 23. DC Current Gain
12
0
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1G
25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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10
50
MUN5111DW1T1G Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
100
10
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 29. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 30. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 28. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1G
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
http://onsemi.com
11
50
MUN5111DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
25°C
TA = −25°C
1
30
1
10
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
100
Figure 33. DC Current Gain
IC, COLLECTOR CURRENT (mA)
TBD
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
VO = 5 V
0
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 35. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
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12
25
MUN5111DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
1
30
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10 75°C
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 39. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 40. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 38. DC Current Gain
12
0
25°C
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
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13
25
MUN5111DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
25°C
10
TA = −25°C
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 44. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
12
10
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
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14
50
MUN5111DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
7
6
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
0.1
TA = −25°C
0.01
0.001
50
Figure 49. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 50. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 48. DC Current Gain
8
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 51. Input Voltage versus Output Current
http://onsemi.com
15
50
MUN5111DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 52. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
0.1
TA = −25°C
0.01
0.001
50
Figure 54. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 55. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 53. DC Current Gain
3.5
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 56. Input Voltage versus Output Current
http://onsemi.com
16
50
MUN5111DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 59. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 60. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
8
0
100
Figure 58. DC Current Gain
12
10
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 61. Input Voltage versus Output Current
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17
50
MUN5111DW1T1G Series
1
0.1
−25°C
0.01
75°C
25°C
IC/IB = 10
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1G
1000
75°C
TA = −25°C
100
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA = −25°C
1
V
VO
O == 55VV
0
1
2
3
4
TA = −25°C
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 65. Output Current versus Input Voltage
10
1
5
Vin, INPUT VOLTAGE (VOLTS)
100
25°C
75°C
10
0.1
60
Figure 64. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 63. DC Current Gain
1.2
0
25°C
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 66. Input Voltage versus Output Current
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18
20
MUN5111DW1T1G Series
1
TA = −25°C
75°C
0.1
25°C
0.01
IC/IB = 10
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1G
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 67. VCE(sat) versus IC
Figure 68. DC Current Gain
100
1.0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
TA = −25°C
10
25°C
1
0.1
0.01
0.001
60
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 70. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 69. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
1.2
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 71. Input Voltage versus Output Current
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19
MUN5111DW1T1G Series
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
DIM
A
A1
A3
b
C
D
E
e
L
HE
4
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
A3
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
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MUN5111DW1T1/D