APM4804K N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/8A, D RDS(ON) = 17mΩ(typ.) @ VGS = 10V RDS(ON) = 22mΩ(typ.) @ VGS = 4.5V • • • • D D D S S Super High Density Cell Design S G Reliable and Rugged SOP − 8 SOP-8 Package DD D D Lead Free Available (RoHS Compliant) Applications G • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S S S N-Channel MOSFET Ordering and Marking Information Package Code K : SO P-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4804 Lead Free Code Handling Code Tem p. Range Package Code APM4804 K : APM4804 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM4804K Absolute Maximum Ratings Symbol Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±16 ID* Continue Drain Current IDM* IS* 300µs Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V 8 VGS=10V A 30 A 4 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a Test Condition VGS=0V, IDS=250µA Gate Leakage Current VGS=±16V, VDS=0V Dynamic Characteristics Typ. Max. 30 1 30 0.6 Unit V TJ=85°C VDS=VGS, IDS=250µA Diode Forward Voltage Min. VDS=24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM4804K 1 µA 1.5 V ±100 nA VGS=10V, IDS=8A 17 22 VGS=4.5V, IDS=5.6A 22 28 ISD=4A, VGS=0V 0.8 1.3 mΩ V b Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 713 VGS=0V, VDS=15V, Frequency=1.0MHz 142 VGS=0V, VDS=0V, f=1MHz 1.5 2 pF 120 Ω www.anpec.com.tw APM4804K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition Dynamic Characteristics b td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge Min. Typ. Max. 3 6 17 32 24 44 16 30 15.7 20 Unit ns b Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω APM4804K VDS=15V, VGS=10V, IDS=8A 1.9 nC 2.2 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM4804K Typical Characteristics Power Dissipation o TA=25 C Drain Current 10 2.5 8 ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 6 4 2 0.5 o TA=25 C, VG=10V o 0.0 TA=25 C 0 20 0 40 60 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im )L on Rd s( 10 ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 100 300µs 1ms 1 10ms 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4804K Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 30 30 VGS= 3,4,5,6,7,8,9,10V 27 RDS(ON) - On - Resistance (mΩ) 28 ID - Drain Current (A) 24 21 2.5V 18 15 12 9 2V 6 3 26 24 VGS=4.5V 22 20 18 VGS=10V 16 14 1.5V 0 0 2 4 6 8 12 10 0 4 8 12 16 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 20 1.4 30 Normalized Threshold Voltage IDS=250µA ID - Drain Current (A) 25 20 15 10 o Tj=125 C 5 o 0.5 1.0 1.0 0.8 0.6 o Tj=25 C 0 0.0 1.2 Tj=-55 C 1.5 2.0 2.5 3.0 0.4 -50 -25 3.5 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0 5 www.anpec.com.tw APM4804K Typical Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 30 1.8 VGS = 10V IDS = 8A 10 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 17mΩ 0 25 50 75 0.1 0.0 100 125 150 0.2 0.4 1.0 1.2 1.4 Gate Charge Capacitance 1400 10 Frequency=1MHz VDS=15V VGS - Gate - source Voltage (V) 1200 C - Capacitance (pF) 0.8 VSD - Source-Drain Voltage (V) Tj - Junction Temperature (°C) 1000 800 Ciss 600 400 Coss 200 0.6 IDS=8A 8 6 4 2 Crss 0 0 5 10 15 20 25 0 30 VDS - Drain-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0 2 4 6 8 10 12 14 16 QG - Gate Charge (nC) 6 www.anpec.com.tw APM4804K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 1. 27B S C 0. 50B S C 8° 8° φ 1 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 7 www.anpec.com.tw APM4804K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8 www.anpec.com.tw APM4804K Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 D1 9 www.anpec.com.tw APM4804K Carrier Tape(Cont.) T2 J C A B T1 Application SOP-8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 .3±0.013 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 10 www.anpec.com.tw