AP3P2R2CDT
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ 100% Rg & UIS Test
BVDSS
RDS(ON)
ID4
D
▼ Ultra Low On-resistance
-30V
2.2mΩ
-205A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP3P2R2 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The PDFN 5x6 package used advanced package and silicon
combination for ultra low on-resistance and high efficiency,
special for DC-DC converters application and the foot print is
compatible with SO-8 with backside heat sink and lower
profile.
D
D
D
PDFN 5x6
D
G
S
S
S
Bottom View
.
Top View
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
Drain Current (Chip), VGS @ 10V
4
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
5
Rating
Units
-30
V
+20
V
-205
A
-39.2
A
-31.4
A
-200
A
138.8
W
5
W
245
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
0.9
℃/W
25
℃/W
1
201508241
AP3P2R2CDT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-20A
-
1.3
2.2
mΩ
VGS=-4.5V, ID=-20A
-
2
3.2
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-20A
-
96
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-20A
-
138
221
nC
Qgs
Gate-Source Charge
VDS=-15V
-
31
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
50
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
20
-
ns
tr
Rise Time
ID=-1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
390
-
ns
tf
Fall Time
VGS=-10V
-
200
-
ns
Ciss
Input Capacitance
VGS=0V
-
17600 28160
pF
Coss
Output Capacitance
VDS=-15V
Crss
Rg
-
2100
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
725
-
pF
Gate Resistance
f=1.0MHz
-
4.2
8.4
Ω
Min.
Typ.
IS=-20A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-20A, VGS=0V,
-
50
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
60
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec
4.Package limitation current is 100A .
o
5.Starting Tj=25 C , VDD=-30V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3P2R2CDT
200
320
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
240
T C = 150 o C
160
-ID , Drain Current (A)
-ID , Drain Current (A)
T C =25 o C
160
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
120
80
80
40
0
0
0
0
1
1
2
0
2
0
-V DS , Drain-to-Source Voltage (V)
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
2.0
I D = -20A
V G = -10V
I D = -20 A
o
T C =25 C
1.6
1.6
.
Normalized RDS(ON)
RDS(ON) (mΩ)
2
1.2
0.8
1.2
0.4
0.8
0.0
2
4
6
8
10
-100
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.0
I D = -1mA
Normalized VGS(th)
1.6
-IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
2.01E+09
0.0
0.1
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3P2R2CDT
I D = -20 A
V DS = -15V
20000
6
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
24000
8
C iss
16000
12000
4
8000
2
4000
C oss
C rss
0
0
0
40
80
120
160
200
1
240
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
33
37
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10us
100us
100
Operation in this area
limited by RDS(ON)
.
10
1ms
10ms
1
T C =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthjc)
1000
-ID (A)
13
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
0.1
0.01
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
240
V DS =-5V
200
-ID , Drain Current (A)
-ID , Drain Current (A)
160
120
80
T j =150 o C
o
160
120
Limited by package
80
T j =25 C
40
2.01E+09
40
o
T j = -55 C
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 12. Drain Current v.s. Case Temperature
4
AP3P2R2CDT
160
2
I D = -1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
120
80
40
0.4
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
10
T j =25 o C
RDS(ON) (mΩ)
8
6
.
4
-4.5V
V GS = -10V
2
0
0
20
40
60
80
100
120
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP3P2R2CDT
MARKING INFORMATION
Part Number
3P2R2C
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6