Intersil IRF420 2.2a and 2.5a, 450v and 500v, 3.0 and 4.0 ohm, n-channel power mosfet Datasheet

IRF420, IRF421,
IRF422, IRF423
Semiconductor
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
July 1998
Features
Description
• 2.2A and 2.5A, 450V and 500V
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
• rDS(ON) = 3.0Ω and 4.0Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17405.
Symbol
Ordering Information
D
PART NUMBER
PACKAGE
BRAND
IRF420
TO-204AA
IRF420
IRF421
TO-204AA
IRF421
IRF422
TO-204AA
IRF422
IRF423
TO-204AA
IRF423
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number
1571.3
IRF420, IRF421, IRF422, IRF423
Absolute Maximum Ratings
TC = 25oC Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . .TJ , TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg
IRF420
500
500
2.5
1.6
10
±20
50
0.4
210
-55 to 150
IRF421
450
450
2.5
1.6
10
±20
50
0.4
210
-55 to 150
IRF422
500
500
2.2
1.4
8
±20
50
0.4
210
-55 to 150
IRF423
450
450
2.2
1.4
8
±20
50
0.4
210
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
MIN
TYP
MAX
UNITS
IRF420, IRF422
500
-
-
V
IRF421, IRF423
450
-
-
V
2.0
-
4.0
V
VDS = Rated BVDSS , VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ = 125oC
-
-
250
µA
2.5
-
-
A
2.2
-
-
A
-
-
±100
nA
IRF420, IRF421
-
2.5
3.0
Ω
IRF422, IRF423
-
3.0
4.0
Ω
1.5
2.3
-
S
-
10
15
ns
-
12
18
ns
-
28
42
ns
-
12
18
ns
-
11
19
nC
-
5
-
nC
-
6
-
nC
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
SYMBOL
BVDSS
VGS(TH)
IDSS
ID(ON)
IRF420, IRF421
TEST CONDITIONS
ID = 250µA, VGS = 0V, (Figure 10)
VGS = VDS , ID = 250µA
VDS > ID(ON) x rDS(ON)MAX , VGS = 10V
(Figure 7)
IRF422, IRF423
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
VGS = ±20V
ID = 1.4A, VGS = 10V, (Figures 8, 9)
VDS ≥ 10V, ID = 2.0A, (Figure 12)
VDD = 250V, ID ≈ 2.5A, RG = 18Ω, RL = 96Ω,
VGS = 10V, (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature
tf
Qg(TOT)
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
VGS = 10V, ID ≈ 2.5A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
5-2
IRF420, IRF421, IRF422, IRF423
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
300
-
pF
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
Output Capacitance
COSS
-
75
-
pF
Reverse Transfer Capacitance
CRSS
-
20
-
pF
-
5.0
-
nH
-
12.5
-
nH
-
-
2.5
oC/W
-
-
30
oC/W
MIN
TYP
MAX
UNITS
-
-
2.5
A
-
-
10
A
-
-
1.4
V
Internal Drain Inductance
LD
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.
D
LD
G
LS
S
Free Air Operation
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
D
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
TJ = 25oC, ISD = 2.5A, VGS = 0V, (Figure 13)
trr
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs
130
270
540
ns
QRR
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs
0.57
1.2
2.3
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25Ω, peak IAS = 2.5A, Figures 15, 16.
5-3
IRF420, IRF421, IRF422, IRF423
Typical Performance Curves
TC = 25oC Unless Otherwise Specified
POWER DISSIPATION MULTIPLIER
1.2
2.5
ID , DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
2.0
IRF420, IRF421
1.5
IRF422, IRF423
1.0
0.5
0
0
0
50
100
150
25
50
75
TC, CASE TEMPERATURE (oC)
125
100
150
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
ZθJC, TRANSIENT
THERMAL IMPEDANCE
10
1
0.5
0.2
0.1
PDM
0.05
0.1
0.02
0.01
t1
SINGLE PULSE
0.01
10-5
t2
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
5
10
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10µs
IRF422/3
IRF420/1
100µs
IRF422/3
1
OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
1
80µs PULSE TEST
VGS = 10V
IRF420/1
10
1ms
IRF420/2
10ms
VGS = 6V
4
3
VGS = 5.5V
2
1
VGS = 5V
VGS = 4V
IRF421/3
DC
102
0
103
0
VDS , DRAIN TO SOURCE VOLTAGE (V)
50
100
150
VGS = 4.5V
200
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5-4
250
IRF420, IRF421, IRF422, IRF423
Typical Performance Curves
TC = 25oC Unless Otherwise Specified (Continued)
5
10
80µs PULSE TEST
VDS ≥ 50V
80µs PULSE TEST
4
ID , DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
VGS = 10V
VGS = 6V
3
2
VGS = 5.5V
1
TJ = 150oC
TJ = 25oC
1
0.1
VGS = 5V
VGS = 4V
VGS = 4.5V
0
0
4
8
12
16
VDS , DRAIN TO SOURCE VOLTAGE (V)
0.01
0
20
2
FIGURE 6. SATURATION CHARACTERISTICS
3.0
NORMALIZED ON RESISTANCE
rDS(ON) , DRAIN TO SOURCE
ON RESISTANCE (Ω)
80µs PULSE TEST
8
6
VGS = 10V
VGS = 20V
2
0
0
2
4
6
8
6
8
10
FIGURE 7. TRANSFER CHARACTERISTICS
10
4
4
VGS , GATE TO SOURCE VOLTAGE (V)
ID = 2.5A
VGS = 10V
2.4
1.8
1.2
0.6
0
-60
10
-40
ID , DRAIN CURRENT (A)
-20
0
20
60
40
80
100 120 140 160
TJ , JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION
TEMPERATURE
1000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
ID = 250µA
1.15
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.25
1.05
0.95
0.85
800
600
CISS
400
200
COSS
CRSS
0.75
-60 -40
0
-20
0
20
40
60
80
100 120 140 160
1
TJ , JUNCTION TEMPERATURE (oC)
10
102
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
IRF420, IRF421, IRF422, IRF423
Typical Performance Curves
TC = 25oC Unless Otherwise Specified (Continued)
4.0
10
TJ = 25oC
2.4
TJ = 150oC
1.6
0.8
0
0
0.8
1.6
2.4
PULSE DURATION = 80µs
ISD , SOURCE TO DRAIN CURRENT (A)
3.2
3.2
TJ = 150oC
1
TJ = 25oC
0.1
4.0
0
ID , DRAIN CURRENT (A)
0.4
0.8
1.6
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 2.5A
VDS = 400V
VDS = 250V
VDS = 100V
16
12
8
4
0
0
1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
VGS , GATE TO SOURCE VOLTAGE (V)
gfs , TRANSCONDUCTANCE (S)
PULSE DURATION = 80µs
4
8
12
16
20
Qg(TOT) , TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-6
2.0
IRF420, IRF421, IRF422, IRF423
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
IAS
+
RG
REQUIRED PEAK IAS
VDS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
+
RG
-
VDD
10%
0
10%
DUT
90%
VGS
VGS
0
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
0.2µF
50%
PULSE WIDTH
10%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50kΩ
Qgd
0.3µF
VGS
Qgs
D
VDS
DUT
G
0
IG(REF)
S
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
IG(REF)
0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
5-7
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