IRF420, IRF421, IRF422, IRF423 Semiconductor 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17405. Symbol Ordering Information D PART NUMBER PACKAGE BRAND IRF420 TO-204AA IRF420 IRF421 TO-204AA IRF421 IRF422 TO-204AA IRF422 IRF423 TO-204AA IRF423 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1571.3 IRF420, IRF421, IRF422, IRF423 Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . .TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg IRF420 500 500 2.5 1.6 10 ±20 50 0.4 210 -55 to 150 IRF421 450 450 2.5 1.6 10 ±20 50 0.4 210 -55 to 150 IRF422 500 500 2.2 1.4 8 ±20 50 0.4 210 -55 to 150 IRF423 450 450 2.2 1.4 8 ±20 50 0.4 210 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF420, IRF422 500 - - V IRF421, IRF423 450 - - V 2.0 - 4.0 V VDS = Rated BVDSS , VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA 2.5 - - A 2.2 - - A - - ±100 nA IRF420, IRF421 - 2.5 3.0 Ω IRF422, IRF423 - 3.0 4.0 Ω 1.5 2.3 - S - 10 15 ns - 12 18 ns - 28 42 ns - 12 18 ns - 11 19 nC - 5 - nC - 6 - nC Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IRF420, IRF421 TEST CONDITIONS ID = 250µA, VGS = 0V, (Figure 10) VGS = VDS , ID = 250µA VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) IRF422, IRF423 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) IGSS rDS(ON) gfs td(ON) tr td(OFF) VGS = ±20V ID = 1.4A, VGS = 10V, (Figures 8, 9) VDS ≥ 10V, ID = 2.0A, (Figure 12) VDD = 250V, ID ≈ 2.5A, RG = 18Ω, RL = 96Ω, VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 10V, ID ≈ 2.5A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 5-2 IRF420, IRF421, IRF422, IRF423 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - 300 - pF Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) Output Capacitance COSS - 75 - pF Reverse Transfer Capacitance CRSS - 20 - pF - 5.0 - nH - 12.5 - nH - - 2.5 oC/W - - 30 oC/W MIN TYP MAX UNITS - - 2.5 A - - 10 A - - 1.4 V Internal Drain Inductance LD Measured between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die. Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from the Flange and Source Bonding Pad. Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Modified MOSFET Symbol Showing the Internal Devices Inductances. D LD G LS S Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge VSD TJ = 25oC, ISD = 2.5A, VGS = 0V, (Figure 13) trr TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 130 270 540 ns QRR TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 0.57 1.2 2.3 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25Ω, peak IAS = 2.5A, Figures 15, 16. 5-3 IRF420, IRF421, IRF422, IRF423 Typical Performance Curves TC = 25oC Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 2.5 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 2.0 IRF420, IRF421 1.5 IRF422, IRF423 1.0 0.5 0 0 0 50 100 150 25 50 75 TC, CASE TEMPERATURE (oC) 125 100 150 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE 10 1 0.5 0.2 0.1 PDM 0.05 0.1 0.02 0.01 t1 SINGLE PULSE 0.01 10-5 t2 NOTES: DUTY FACTOR: D = t1/t2 TJ = PDM x ZθJC + TC 10-4 10-3 10-2 0.1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 5 10 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10µs IRF422/3 IRF420/1 100µs IRF422/3 1 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 80µs PULSE TEST VGS = 10V IRF420/1 10 1ms IRF420/2 10ms VGS = 6V 4 3 VGS = 5.5V 2 1 VGS = 5V VGS = 4V IRF421/3 DC 102 0 103 0 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 100 150 VGS = 4.5V 200 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 250 IRF420, IRF421, IRF422, IRF423 Typical Performance Curves TC = 25oC Unless Otherwise Specified (Continued) 5 10 80µs PULSE TEST VDS ≥ 50V 80µs PULSE TEST 4 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 10V VGS = 6V 3 2 VGS = 5.5V 1 TJ = 150oC TJ = 25oC 1 0.1 VGS = 5V VGS = 4V VGS = 4.5V 0 0 4 8 12 16 VDS , DRAIN TO SOURCE VOLTAGE (V) 0.01 0 20 2 FIGURE 6. SATURATION CHARACTERISTICS 3.0 NORMALIZED ON RESISTANCE rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) 80µs PULSE TEST 8 6 VGS = 10V VGS = 20V 2 0 0 2 4 6 8 6 8 10 FIGURE 7. TRANSFER CHARACTERISTICS 10 4 4 VGS , GATE TO SOURCE VOLTAGE (V) ID = 2.5A VGS = 10V 2.4 1.8 1.2 0.6 0 -60 10 -40 ID , DRAIN CURRENT (A) -20 0 20 60 40 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION TEMPERATURE 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS ID = 250µA 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 800 600 CISS 400 200 COSS CRSS 0.75 -60 -40 0 -20 0 20 40 60 80 100 120 140 160 1 TJ , JUNCTION TEMPERATURE (oC) 10 102 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF420, IRF421, IRF422, IRF423 Typical Performance Curves TC = 25oC Unless Otherwise Specified (Continued) 4.0 10 TJ = 25oC 2.4 TJ = 150oC 1.6 0.8 0 0 0.8 1.6 2.4 PULSE DURATION = 80µs ISD , SOURCE TO DRAIN CURRENT (A) 3.2 3.2 TJ = 150oC 1 TJ = 25oC 0.1 4.0 0 ID , DRAIN CURRENT (A) 0.4 0.8 1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 ID = 2.5A VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 0 0 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS , GATE TO SOURCE VOLTAGE (V) gfs , TRANSCONDUCTANCE (S) PULSE DURATION = 80µs 4 8 12 16 20 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 2.0 IRF420, IRF421, IRF422, IRF423 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN IAS + RG REQUIRED PEAK IAS VDS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7