ON MJ15002 Power transistors complementary silicon Datasheet

MJ15001 (NPN),
MJ15002 (PNP)
Complementary Silicon
Power Transistors
The MJ15001 and MJ15002 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
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20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
• High Safe Operating Area (100% Tested) − 5.0 A @ 40 V
0.5 A @ 100 V
• For Low Distortion Complementary Designs
• High DC Current Gain − hFE = 25 (Min) @ IC = 4 Adc
• These are Pb−Free Devices*
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
140
Vdc
Collector−Base Voltage
VCBO
140
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector Current − Continuous
IC
15
Adc
Base Current − Continuous
IB
5
Adc
Emitter Current − Continuous
IE
20
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
200
1.14
W
W/°C
TJ, Tstg
–65 to +200
°C
Symbol
Max
Unit
RqJC
0.875
°C/W
TL
265
°C
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500xG
AYYWW
MEX
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJ1500x = Device Code
x = 1 or 2
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 5
1
Package
Shipping
MJ15001G
TO−204AA
(Pb−Free)
100 Units/Tray
MJ15002G
TO−204AA
(Pb−Free)
100 Units/Tray
Publication Order Number:
MJ15001/D
MJ15001 (NPN), MJ15002 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
140
−
Vdc
−
−
100
2.0
mAdc
mAdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC, = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ICEX
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
−
250
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
−
100
mAdc
5.0
0.5
−
−
hFE
25
150
−
Collector−Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
VCE(sat)
−
1.0
Vdc
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
VBE(on)
−
2.0
Vdc
fT
2.0
−
MHz
Cob
−
1000
pF
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1 s (non−repetitive))
(VCE = 100 Vdc, t = 1 s (non−repetitive))
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 2 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ (pk) = 200°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
200
IC, COLLECTOR CURRENT (AMP)
TC = 25°C
10
7
5
3
2
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
1
0.7
0.5
0.3
0.2
2
3
5 7 10
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
Figure 1. Active−Region Safe Operating Area
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2
MJ15001 (NPN), MJ15002 (PNP)
C, CAPACITANCE (pF)
TJ = 25°C
Cib
300
200
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS
1000
700
500
Cib
Cob
100
70
50
Cob
30
MJ15001 (NPN)
MJ15002 (PNP)
20
10
1.5 2
3
5
20 30
50
7 10
VR, REVERSE VOLTAGE (VOLTS)
100 150
70
10
9
7
5
4
3
1
0
MJ15001
0.1
2 3
0.2 0.3
0.5 0.7 1
IC, COLLECTOR CURRENT (AMP)
5
7
10
MJ15002
200
VCE = 2 Vdc
TJ = 100°C
25°C
30
20
10
7
5
3
2
0.2 0.3
0.5 0.7 1
2
3
5
7
IC, COLLECTOR CURRENT (AMP)
10
70
50
25°C
30
20
10
7
5
3
2
0.2 0.3
20
VCE = 2 Vdc
TJ = 100°C
100
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
MJ15001
(NPN)
2
Figure 3. Current−Gain — Bandwidth Product
200
70
50
TJ = 25°C
VCE = 10 V
ftest = 0.5 MHz
6
Figure 2. Capacitances
100
MJ15002 (PNP)
8
0.5 0.7 1
2
3
5 7
IC, COLLECTOR CURRENT (AMP)
10
20
10
20
Figure 4. DC Current Gain
MJ15002
2.0
1.6
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
MJ15001
2.0
1.2
VBE @ VCE = 2 Vdc
0.8
TJ = 25°C
0.4
100°C
VCE(sat) @ IC/IB = 10
0
0.2 0.3
0.5 0.7
TJ = 100°C
1.2
0.8
2
3
TJ = 25°C
5
TJ = 100°C
100°C
0.4
VCE(sat) @ IC/IB = 10
25°C
1
VBE @ VCE = 2 Vdc
7
10
0
0.2 0.3
20
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1
25°C
2
3
5
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
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3
7
MJ15001 (NPN), MJ15002 (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
A
N
C
E
D
−T−
K
2 PL
0.13 (0.005)
U
V
SEATING
PLANE
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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