AD ADR3540WARMZ-R7 Micropower, high accuracy Datasheet

FEATURES
PIN CONFIGURATION
Maximum temperature coefficient: 5 ppm/°C (B grade)
Low long-term drift (LTD): 30 ppm (initial 1 khr typical)
Initial output voltage error: ±0.1% (maximum)
Operating temperature range: −40°C to +125°C
Output current: +10 mA source/−3 mA sink
Low quiescent current: 100 μA (maximum)
Low dropout voltage: 250 mV at 2 mA
Output voltage noise (0.1 Hz to 10 Hz): 29 μV p-p at
4.096 V (typical)
Qualified for automotive applications
ENABLE 1
GND SENSE 2
GND FORCE 3
ADR35xx
TOP VIEW
(Not to Scale)
NC 4
8
VIN
7
VOUT SENSE
6
VOUT FORCE
5
NC
NOTES
1. NC = NO CONNECT. DO NOT
CONNECT TO THIS PIN.
09594-001
Data Sheet
Micropower, High Accuracy
Voltage References
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Figure 1. 8-Lead MSOP (RM-8 Suffix)
APPLICATIONS
Automotive battery monitors
Portable instrumentation
Process transmitters
Remote sensors
Medical instrumentation
GENERAL DESCRIPTION
The ADR3525W, ADR3530W, ADR3533W, ADR3540W, and
ADR3550W are low cost, low power, high precision CMOS
voltage references, featuring a maximum temperature coefficient (TC) of 5 ppm/°C (B grade), 8 ppm/°C (A grade), low
operating current, and low output noise in an 8-lead MSOP
package. For high accuracy, the output voltage and temperature
coefficient are trimmed digitally during final assembly using the
Analog Devices, Inc., patented DigiTrim® technology.
Table 1. Selection Guide
Model
ADR3525W
ADR3530W
ADR3533W
ADR3540W
ADR3550W
Output Voltage (V)
2.500
3.000
3.300
4.096
5.000
Input Voltage Range (V)
2.7 to 5.5
3.2 to 5.5
3.5 to 5.5
4.3 to 5.5
5.2 to 5.5
The low output voltage hysteresis and low long-term output
voltage drift improve lifetime system accuracy.
These CMOS references are available in five output voltages, all
of which are specified over the automotive temperature range of
−40°C to +125°C.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2011 Analog Devices, Inc. All rights reserved.
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Terminology .................................................................................... 16
Applications ....................................................................................... 1
Theory of Operation ...................................................................... 17
Pin Configuration ............................................................................. 1
Long-Term Output Voltage Drift ............................................. 17
General Description ......................................................................... 1
Power Dissipation....................................................................... 17
Revision History ............................................................................... 2
Applications Information .............................................................. 18
Specifications..................................................................................... 3
Basic Voltage Reference Connection ....................................... 18
ADR3525 Electrical Characteristics .......................................... 3
Input and Output Capacitors .................................................... 18
ADR3530 Electrical Characteristics .......................................... 4
4-Wire Kelvin Connections ...................................................... 18
ADR3533 Electrical Characteristics .......................................... 5
VIN Slew Rate Considerations ................................................... 18
ADR3540 Electrical Characteristics .......................................... 6
Shutdown/Enable Feature ......................................................... 18
ADR3550 Electrical Characteristics .......................................... 7
Sample Applications ................................................................... 19
Absolute Maximum Ratings............................................................ 8
Outline Dimensions ....................................................................... 20
Thermal Resistance ...................................................................... 8
Ordering Guide .......................................................................... 20
ESD Caution .................................................................................. 8
Automotive Products ................................................................. 20
Pin Configuration and Function Descriptions ............................. 9
Typical Performance Characteristics ........................................... 10
REVISION HISTORY
9/11—Revision 0: Initial Version
Rev. 0 | Page 2 of 20
Data Sheet
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
SPECIFICATIONS
ADR3525 ELECTRICAL CHARACTERISTICS
VIN = 2.7 V to 5.5 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
OUTPUT VOLTAGE
INITIAL OUTPUT VOLTAGE ERROR
Symbol
VOUT
VOERR
Conditions
TEMPERATURE COEFFICIENT
A Grade
B Grade
LINE REGULATION
TCVOUT
−40°C ≤ TA ≤ +125°C
LOAD REGULATION
Sourcing
ΔVOUT/ΔVIN
IL = 0 mA to 10 mA,
VIN = 3.0 V, −40°C ≤ TA ≤ +125°C
IL = 0 mA to −3 mA,
VIN = 3.0 V, −40°C ≤ TA ≤ +125°C
VIN = 3.0 V to 5.5 V
VIN = 3.0 V to 5.5 V
Unit
V
%
mV
2.5
2.5
5
8
5
50
120
ppm/°C
ppm/°C
ppm/V
ppm/V
10
30
ppm/mA
10
50
ppm/mA
10
−3
mA
mA
IQ
VDO
ENABLE PIN
Shutdown Voltage
ENABLE Voltage
ENABLE Pin Leakage Current
OUTPUT VOLTAGE NOISE
VL
VH
IEN
en p-p
OUTPUT VOLTAGE NOISE DENSITY
OUTPUT VOLTAGE HYSTERESIS 2
RIPPLE REJECTION RATIO
LONG-TERM OUTPUT VOLTAGE DRIFT
TURN-ON SETTLING TIME
en
ΔVOUT_HYS
RRR
ΔVOUT_LTD
tR
2
Max
2.5025
±0.1
±2.5
IL
Shutdown
DROPOUT VOLTAGE 1
1
VIN = 2.7 V to 5.5 V
VIN = 2.7 V to 5.5 V, −40°C ≤ TA ≤ +125°C
Typ
2.500
ΔVOUT/ΔIL
Sinking
OUTPUT CURRENT CAPACITY
Sourcing
Sinking
QUIESCENT CURRENT
Normal Operation
Min
2.4975
ENABLE ≥ VIN × 0.85
ENABLE = VIN, −40°C ≤ TA ≤ +125°C
ENABLE ≤ 0.7 V
IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C
IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C
50
75
0
VIN × 0.85
ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz to 10 kHz
f = 1 kHz
TA = +25°C to −40°C to +125°C to +25°C
fIN = 60 Hz
1000 hours at 50°C
CIN = 0.1 μF, CL = 0.1 μF, RL = 1 kΩ
1
18
42
1
70
−60
30
600
Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section.
See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
Rev. 0 | Page 3 of 20
85
100
5
200
250
μA
μA
μA
mV
mV
0.7
VIN
3
V
V
μA
μV p-p
μV rms
μV/√Hz
ppm
dB
ppm
μs
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
ADR3530 ELECTRICAL CHARACTERISTICS
VIN = 3.2 V to 5.5 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
OUTPUT VOLTAGE
INITIAL OUTPUT VOLTAGE ERROR
Symbol
VOUT
VOERR
Conditions
TEMPERATURE COEFFICIENT
A Grade
B Grade
LINE REGULATION
TCVOUT
−40°C ≤ TA ≤ +125°C
LOAD REGULATION
Sourcing
ΔVOUT/ΔVIN
IL = 0 mA to 10 mA,
VIN = 3.5 V, −40°C ≤ TA ≤ +125°C
IL = 0 mA to −3 mA,
VIN = 3.5 V, −40°C ≤ TA ≤ +125°C
VIN = 3.5 V to 5.5 V
VIN = 3.5 V to 5.5 V
Unit
V
%
mV
2.5
2.5
5
8
5
50
120
ppm/°C
ppm/°C
ppm/V
ppm/V
9
30
ppm/mA
10
50
ppm/mA
10
−3
mA
mA
IQ
VDO
ENABLE PIN
Shutdown Voltage
ENABLE Voltage
ENABLE Pin Leakage Current
OUTPUT VOLTAGE NOISE
VL
VH
IEN
en p-p
OUTPUT VOLTAGE NOISE DENSITY
OUTPUT VOLTAGE HYSTERESIS 2
RIPPLE REJECTION RATIO
LONG-TERM OUTPUT VOLTAGE DRIFT
TURN-ON SETTLING TIME
en
ΔVOUT_HYS
RRR
ΔVOUT_LTD
tR
2
Max
3.0030
±0.1
±3.0
IL
Shutdown
DROPOUT VOLTAGE 1
1
VIN = 3.2 V to 5.5 V
VIN = 3.2 V to 5.5 V, −40°C ≤ TA ≤ +125°C
Typ
3.0000
ΔVOUT/ΔIL
Sinking
OUTPUT CURRENT CAPACITY
Sourcing
Sinking
QUIESCENT CURRENT
Normal Operation
Min
2.9970
ENABLE ≥ VIN × 0.85
ENABLE = VIN, −40°C ≤ TA ≤ +125°C
ENABLE ≤ 0.7 V
IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C
IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C
50
75
0
VIN × 0.85
ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz to 10 kHz
f = 1 kHz
TA = +25°C to −40°C to +125°C to +25°C
fIN = 60 Hz
1000 hours at 50°C
CIN = 0.1 μF, CL = 0.1 μF, RL = 1 kΩ
0.85
22
45
1.1
70
−60
30
700
Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section.
See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
Rev. 0 | Page 4 of 20
85
100
5
200
250
μA
μA
μA
mV
mV
0.7
VIN
3
V
V
μA
μV p-p
μV rms
μV/√Hz
ppm
dB
ppm
μs
Data Sheet
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
ADR3533 ELECTRICAL CHARACTERISTICS
VIN = 3.5 V to 5.5 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 4.
Parameter
OUTPUT VOLTAGE
INITIAL OUTPUT VOLTAGE ERROR
Symbol
VOUT
VOERR
Test Conditions/Comments
TEMPERATURE COEFFICIENT
A Grade
B Grade
LINE REGULATION
TCVOUT
−40°C ≤ TA ≤ +125°C
LOAD REGULATION
Sourcing
ΔVOUT/ΔVIN
IL = 0 mA to 10 mA,
VIN = 3.8 V, −40°C ≤ TA ≤ +125°C
IL = 0 mA to −3 mA,
VIN = 3.8 V, −40°C ≤ TA ≤ +125°C
VIN = 3.8 V to 5.5 V
VIN = 3.8 V to 5.5 V
Unit
V
%
mV
2.5
2.5
5
8
5
50
120
ppm/°C
ppm/°C
ppm/V
ppm/V
9
30
ppm/mA
10
50
ppm/mA
10
−3
mA
mA
IQ
VDO
ENABLE PIN
Shutdown Voltage
ENABLE Voltage
ENABLE Pin Leakage Current
OUTPUT VOLTAGE NOISE
VL
VH
IEN
en p-p
OUTPUT VOLTAGE NOISE DENSITY
OUTPUT VOLTAGE HYSTERESIS 2
RIPPLE REJECTION RATIO
LONG-TERM OUTPUT VOLTAGE DRIFT
TURN-ON SETTLING TIME
en
ΔVOUT_HYS
RRR
ΔVOUT_LTD
tR
2
Max
3.3033
±0.1
±3.3
IL
Shutdown
DROPOUT VOLTAGE 1
1
VIN = 3.5 V to 5.5 V
VIN = 3.5 V to 5.5 V, −40°C ≤ TA ≤ +125°C
Typ
3.3000
ΔVOUT/ΔIL
Sinking
OUTPUT CURRENT CAPACITY
Sourcing
Sinking
QUIESCENT CURRENT
Normal Operation
Min
3.2967
ENABLE ≥ VIN × 0.85
ENABLE = VIN, −40°C ≤ TA ≤ +125°C
ENABLE ≤ 0.7 V
IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C
IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C
50
75
0
VIN × 0.85
ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz to 10 kHz
f = 1 kHz
TA = +25°C to −40°C to +125°C to +25°C
fIN = 60 Hz
1000 hours at 50°C
CIN = 0.1 μF, CL = 0.1 μF, RL = 1 kΩ
0.85
25
46
1.2
70
−60
30
750
85
100
5
200
250
μA
μA
μA
mV
mV
0.7
VIN
3
V
V
μA
μV p-p
μV rms
μV/√Hz
ppm
dB
ppm
μs
Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section.
See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
Rev. 0 | Page 5 of 20
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
ADR3540 ELECTRICAL CHARACTERISTICS
VIN = 4.3 V to 5.5 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 5.
Parameter
OUTPUT VOLTAGE
INITIAL OUTPUT VOLTAGE ERROR
Symbol
VOUT
VOERR
Test Conditions/Comments
TEMPERATURE COEFFICIENT
A Grade
B Grade
LINE REGULATION
TCVOUT
−40°C ≤ TA ≤ +125°C
LOAD REGULATION
Sourcing
ΔVOUT/ΔVIN
IL = 0 mA to 10 mA,
VIN = 4.6 V, −40°C ≤ TA ≤ +125°C
IL = 0 mA to −3 mA,
VIN = 4.6 V, −40°C ≤ TA ≤ +125°C
VIN = 4.6 V to 5.5 V
VIN = 4.6 V to 5.5 V
Unit
V
%
mV
2.5
2.5
3
8
5
50
120
ppm/°C
ppm/°C
ppm/V
ppm/V
6
30
ppm/mA
15
50
ppm/mA
10
−3
mA
mA
IQ
VDO
ENABLE PIN
Shutdown Voltage
ENABLE Voltage
ENABLE Pin Leakage Current
OUTPUT VOLTAGE NOISE
VL
VH
IEN
en p-p
OUTPUT VOLTAGE NOISE DENSITY
OUTPUT VOLTAGE HYSTERESIS 2
RIPPLE REJECTION RATIO
LONG-TERM OUTPUT VOLTAGE DRIFT
TURN-ON SETTLING TIME
en
ΔVOUT_HYS
RRR
ΔVOUT_LTD
tR
2
Max
4.1000
±0.1
±4.096
IL
Shutdown
DROPOUT VOLTAGE 1
1
VIN = 4.3 V to 5.5 V
VIN = 4.3 V to 5.5 V, −40°C ≤ TA ≤ +125°C
Typ
4.0960
ΔVOUT/ΔIL
Sinking
OUTPUT CURRENT CAPACITY
Sourcing
Sinking
QUIESCENT CURRENT
Normal Operation
Min
4.0919
ENABLE ≥ VIN × 0.85
ENABLE = VIN, −40°C ≤ TA ≤ +125°C
ENABLE ≤ 0.7 V
IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C
IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C
50
75
0
VIN × 0.85
ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz to 10 kHz
f = 1 kHz
TA = +25°C to −40°C to +125°C to +25°C
fIN = 60 Hz
1000 hours at 50°C
CIN = 0.1 μF, CL = 0.1 μF, RL = 1 kΩ
0.85
29
53
1.4
70
−60
30
800
Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section.
See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
Rev. 0 | Page 6 of 20
85
100
5
200
250
μA
μA
μA
mV
mV
0.7
VIN
3
V
V
μA
μV p-p
μV rms
μV/√Hz
ppm
dB
ppm
μs
Data Sheet
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
ADR3550 ELECTRICAL CHARACTERISTICS
VIN = 5.2 V to 5.5 V, TA = 25°C, ILOAD = 0 mA, unless otherwise noted.
Table 6.
Parameter
OUTPUT VOLTAGE
INITIAL OUTPUT VOLTAGE ERROR
Symbol
VOUT
VOERR
Test Conditions/Comments
TEMPERATURE COEFFICIENT
A Grade
B Grade
LINE REGULATION
TCVOUT
−40°C ≤ TA ≤ +125°C
LOAD REGULATION
Sourcing
ΔVOUT/ΔIL
ΔVOUT/ΔVIN
VIN = 5.5 V
VIN = 5.5 V
Max
5.005
±0.1
±5.0
Unit
V
%
mV
2.5
2.5
3
8
5
50
120
ppm/°C
ppm/°C
ppm/V
ppm/V
3
30
ppm/mA
19
50
ppm/mA
10
−3
mA
mA
IQ
VDO
ENABLE PIN
Shutdown Voltage
ENABLE Voltage
ENABLE Pin Leakage Current
OUTPUT VOLTAGE NOISE
VL
VH
IEN
en p-p
OUTPUT VOLTAGE NOISE DENSITY
OUTPUT VOLTAGE HYSTERESIS 2
RIPPLE REJECTION RATIO
LONG-TERM OUTPUT VOLTAGE DRIFT
TURN-ON SETTLING TIME
en
ΔVOUT_HYS
RRR
ΔVOUT_LTD
tR
2
Typ
5.000
IL
Shutdown
DROPOUT VOLTAGE 1
1
VIN = 5.2 V to 5.5 V
VIN = 5.2 V to 5.5 V, −40°C ≤ TA ≤ +125°C
IL = 0 mA to 10 mA,
VIN = 5.5 V, −40°C ≤ TA ≤ +125°C
IL = 0 mA to −3 mA,
VIN = 5.5 V, −40°C ≤ TA ≤ +125°C
Sinking
OUTPUT CURRENT CAPACITY
Sourcing
Sinking
QUIESCENT CURRENT
Normal Operation
Min
4.995
ENABLE > VIN × 0.85
ENABLE = VIN, −40°C ≤ TA ≤ +125°C
ENABLE < 0.7 V
IL = 0 mA, −40°C ≤ TA ≤ +125°C
IL = 2 mA, −40°C ≤ TA ≤ +125°C
50
75
0
VIN × 0.85
ENABLE = VIN, −40°C ≤ TA ≤ +125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz to 10 kHz
f = 1 kHz
TA = +25°C to −40°C to +125°C to +25°C
fIN = 60 Hz
1000 hours at 50°C
CIN = 0.1 μF, CL = 0.1 μF, RL = 1 kΩ
0.85
35
60
1.5
70
−58
30
900
Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section.
See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown.
Rev. 0 | Page 7 of 20
85
100
5
200
250
μA
μA
μA
mV
mV
0.7
VIN
3
V
V
μA
μV p-p
μV rms
μV/√Hz
ppm
dB
ppm
μs
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
THERMAL RESISTANCE
Table 7.
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Parameter
Supply Voltage
ENABLE to GND SENSE Voltage
Operating Temperature Range
Storage Temperature Range
Junction Temperature Range
Rating
6V
VIN
−40°C to +125°C
−65°C to +150°C
−65°C to +150°C
Table 8. Thermal Resistance
Package Type
8-Lead MSOP (RM-8 Suffix)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. 0 | Page 8 of 20
θJA
132.5
θJC
43.9
Unit
°C/W
Data Sheet
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
ENABLE 1
GND SENSE 2
GND FORCE 3
ADR35xx
TOP VIEW
(Not to Scale)
NC 4
8
VIN
7
VOUT SENSE
6
VOUT FORCE
5
NC
NOTES
1. NC = NO CONNECT. DO NOT
CONNECT TO THIS PIN.
09594-002
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pin Configuration
Table 9. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
7
8
Mnemonic
ENABLE
GND SENSE
GND FORCE
NC
NC
VOUT FORCE
VOUT SENSE
VIN
Description
Enable Connection. Enables or disables the device.
Ground Voltage Sense Connection. Connect directly to the point of lowest potential in the application.
Ground Force Connection.
No Connect. Do not connect to this pin.
No Connect. Do not connect to this pin.
Reference Voltage Output.
Reference Voltage Output Sensing Connection. Connect directly to the voltage input of the load devices.
Input Voltage Connection.
Rev. 0 | Page 9 of 20
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, unless otherwise noted.
2.5008
5.0010
OUTPUT VOLTAGE (V)
5.0015
2.5004
2.5002
2.5000
2.4998
2.4996
5.0005
5.0000
4.9995
4.9990
4.9985
2.4992
4.9980
2.4990
–40
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (ºC)
09594-003
2.4994
4.9975
–40
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (ºC)
Figure 3. ADR3525 Output Voltage vs. Temperature
Figure 6. ADR3550 Output Voltage vs. Temperature
45
40
40
35
35
25
20
15
30
25
20
15
10
10
5
5
0
1
2
3
4
5
6
7
8
9
TEMPERATURE COEFFICIENT (ppm/°C)
10
11
0
09594-004
0
0
1
2
3
4
5
6
7
8
9
10
11
TEMPERATURE COEFFICIENT (ppm/°C)
Figure 4. ADR3525 Temperature Coefficient Distribution
09594-007
NUMBER OF DEVICES
30
Figure 7. ADR3550 Temperature Coefficient Distribution
24
35
ADR3525
ADR3530
ADR3533
ADR3540
ADR3550
20
18
ADR3525
ADR3530
ADR3533
ADR3540
ADR3550
IL = 0mA TO 10mA
SOURCING
30
LOAD REGULATION (ppm/V)
22
16
14
12
10
8
6
4
IL = 0mA TO –3mA
SINKING
25
20
15
10
2
–25
–10
5
20
35
50
65
TEMPERATURE (°C)
80
95
110
125
5
–40
09594-005
0
–40
Figure 5. Load Regulation vs. Temperature (Sourcing)
–25
–10
5
20
35
50
65
TEMPERATURE (°C)
80
95
110
Figure 8. Load Regulation vs. Temperature (Sinking)
Rev. 0 | Page 10 of 20
125
09594-008
NUMBER OF DEVICES
VIN = 5.5V
5.0020
2.5006
LOAD REGULATION (ppm/V)
OUTPUT VOLTAGE (V)
5.0025
VIN = 5.5V
09594-006
2.5010
Data Sheet
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
400
–40°C
+25°C
+125°C
300
250
1
200
150
10µV/DIV
100
50
TIME = 1s/DIV
–2
–1
0
1
2
3
4
5
6
7
8
9
10
LOAD CURRENT (mA)
CH1 pk-pk = 18µV
09594-009
0
–3
Figure 9. ADR3525 Dropout Voltage vs. Load Current
CH1 RMS = 3.14µV
09594-012
DIFFERENTIAL VOLTAGE (mV)
350
Figure 12. ADR3525 Output Voltage Noise (0.1 Hz to 10 Hz)
350
–40°C
+25°C
+125°C
DIFFERENTIAL VOLTAGE (mV)
300
250
200
1
150
100
100µV/DIV
–2
–1
0
1
2
3
4
5
6
7
8
9
10
LOAD CURRENT (mA)
09594-010
TIME = 1s/DIV
CH1 pk-pk = 300µV
Figure 10. ADR3550 Dropout Voltage vs. Load Current
Figure 13. ADR3525 Output Voltage Noise (10 Hz to 10 kHz)
12
140
10
NOISE DENSITY (µV p-p/ Hz)
100
ADR3525
ADR3530
ADR3533
ADR3540
ADR3550
80
60
40
8
6
4
2
20
0
–40 –25
–10
5
20
35
50
65
80
95
TEMPERATURE (°C)
110
125
0
0.1
09594-011
LINE REGULATION (ppm/V)
120
CH1 RMS = 42.0µV
1
10
100
1k
FREQUENCY (Hz)
Figure 14. ADR3525 Output Noise Spectral Density
Figure 11. Line Regulation vs. Temperature
Rev. 0 | Page 11 of 20
10k
09594-014
0
–3
09594-013
50
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
CL = 1.1µF
CIN = 0.1µF
–10
–20
–30
–40
1
–50
–60
10µV/DIV
–70
10
100
1k
10k
100k
FREQUENCY (Hz)
CH1 pk-pk = 33.4µV
Figure 15. ADR3525 Ripple Rejection Ratio vs. Frequency
CH1 RMS = 5.68µV
09594-018
–90
09594-015
–80
Figure 18. ADR3550 Output Voltage Noise (0.1 Hz to 10 Hz)
CIN = CL = 0.1µF
RL = ∞
1
VIN = 2V/DIV
1
09594-016
VOUT = 1V/DIV
CH1 pk-pk = 446µV
Figure 16. ADR3525 Start-Up Response
CH1 RMS = 60.3µV
09594-019
100µV/DIV
TIME = 200µs/DIV
2
Figure 19. ADR3550 Output Voltage Noise (10 Hz to 10 kHz)
12
10
VENABLE = 1V/DIV
VIN = 3.0V
CIN = CL = 0.1µF
RL = ∞
NOISE DENSITY (µV p-p/ Hz)
1
VOUT = 1V/DIV
TIME = 200µs/DIV
2
8
6
4
2
0
0.1
1
10
100
1k
FREQUENCY (Hz)
Figure 17. ADR3525 Restart Response from Shutdown
Figure 20. ADR3550 Output Noise Spectral Density
Rev. 0 | Page 12 of 20
10k
09594-020
ENABLE
09594-017
RIPPLE REJECTION RATIO (dB VOUT/VIN)
0
Data Sheet
CL = 1.1µF
CIN = 0.1µF
–10
ENABLE
1V/DIV
–20
CIN = CL = 0.1µF
VIN = 3V
RL = 1kΩ
–30
–40
1
–50
–60
2
–90
10
100
1k
10k
100k
FREQUENCY (Hz)
VOUT = 1V/DIV
TIME = 200µs/DIV
09594-021
–80
09594-024
–70
Figure 24. ADR3525 Shutdown Response
Figure 21. ADR3550 Ripple Rejection Ratio vs. Frequency
3.2V
CIN = 0µF
CL = 0.1µF
RL = ∞
VIN
2V/DIV
2.7V
500mV/DIV
CIN = CL = 0.1µF
1
2
VOUT = 10mV/DIV
VOUT
2V/DIV
09594-022
09594-025
TIME = 200µs/DIV
2
TIME = 1ms/DIV
1
Figure 22. ADR3550 Start-Up Response
Figure 25. ADR3525 Line Transient Response
SOURCING
IL
ENABLE
1
+10mA
SINKING
SINKING
VENABLE = 2V/DIV
VIN = 5.5V
CIN = CL = 0.1µF
RL = ∞
–3mA
CIN = 0.1µF
CL = 0.1µF
RL = 250Ω
VOUT = 2V/DIV
2.5V
2
TIME = 1ms/DIV
Figure 26. ADR3525 Load Transient Response
Figure 23. ADR3550 Restart Response from Shutdown
Rev. 0 | Page 13 of 20
09594-026
VOUT = 20mV/DIV
TIME = 200µs/DIV
09594-023
RIPPLE REJECTION RATIO (dB VOUT/VIN)
0
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
100
VIN = 5.5 V
90
SUPPLY CURRENT (µA)
80
ENABLE
2V/DIV
CIN = CL = 0.1µF
VIN = 5V
RL = 1kΩ
1
70
60
50
40
30
20
TIME = 200µs/DIV
0
–40
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
Figure 27. ADR3550 Shutdown Response
09594-030
VOUT = 2V/DIV
09594-027
10
2
Figure 30. Supply Current vs. Temperature
2.0
–40°C
+25°C
+125°C
1.8
VIN = 100mV/DIV
1.6
SUPPLY CURRENT (mA)
5.5V
CIN = CL = 0.1µF
1
5.2V
1.4
1.2
1.0
0.8
0.6
0.4
VOUT = 5mV/DIV
0
09594-028
TIME = 1ms/DIV
0
OUTPUT IMPEDANCE (Ω)
+10mA
SINKING
SINKING
30
40
50
60
70
80
90
100
Figure 31. Supply Current vs. ENABLE Pin Voltage
10
SOURCING
20
ENABLE VOLTAGE (% of V IN)
Figure 28. ADR3550 Line Transient Response
IL
10
09594-031
0.2
2
–3mA
CIN = 0.1µF
CL = 0.1µF
RL = 500Ω
CL = 0.1µF
CL = 1.1µF
1
0.1
VOUT = 20mV/DIV
0.01
0.01
09594-029
TIME = 1ms/DIV
0.1
1
10
100
1k
FREQUENCY (Hz)
Figure 32. ADR3550 Output Impedance vs. Frequency
Figure 29. ADR3550 Load Transient Response
Rev. 0 | Page 14 of 20
10k
09594-032
5.0V
Data Sheet
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
80
8
NUMBER OF DEVICES
7
6
5
4
3
2
0.020
Figure 33. Output Voltage Drift Distribution After Reflow (SHR Drift)
TA = +25°C → –40°C → +125°C → +25°C
7
6
5
4
3
2
1
40
09594-034
OUTPUT VOLTAGE HYSTERESIS (ppm)
20
30
10
–10
0
–20
–40
–30
–50
–70
–60
–80
–100
–90
–110
–130
–120
0
–140
0
–20
–40
–60
0
200
400
600
800
1000
Figure 35. ADR3550 Typical Long-Term Output Voltage Drift
(Four Devices, 1000 Hours)
8
–150
20
ELAPSED TIME (Hours)
09594-033
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0
RELATIVE SHIFT IN VOUT (%)
NUMBER OF DEVICES
40
–80
0.002
–0.002
–0.004
–0.006
–0.008
0
–0.010
1
60
Figure 34. ADR3550 Thermally Induced Output Voltage Hysteresis Distribution
Rev. 0 | Page 15 of 20
09594-035
LONG-TERM OUTPUT VOLTAGE DRIFT (ppm)
9
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
TERMINOLOGY
Dropout Voltage (VDO)
Dropout voltage, sometimes referred to as supply voltage
headroom or supply-output voltage differential, is defined as
the minimum voltage differential between the input and output
such that the output voltage is maintained to within 0.1%
accuracy.
Long-Term Output Voltage Drift (ΔVOUT_LTD)
Long-term output voltage drift refers to the shift in output
voltage after 1000 hours of operation in a constant 50°C
environment. This is expressed as either a shift in voltage or a
difference in ppm from the nominal output.
ΔVOUT _ LTD = VOUT (t 1 ) − VOUT (t 0 ) [V]
VDO = (VIN − VOUT)min | IL = constant
Because the dropout voltage depends upon the current passing
through the device, it is always specified for a given load current.
In series-mode devices, dropout voltage typically increases
proportionally to load current (see Figure 9 and Figure 10).
Temperature Coefficient (TCVOUT)
The temperature coefficient relates the change in output voltage
to the change in ambient temperature of the device, as normalized
by the output voltage at 25°C. This parameter is expressed in
ppm/°C and can be determined by the following equations:
TCVOUT 1 =
max{VOUT (T1 , T2 )} − min{VOUT (T1 , T2 )}
VOUT (T2 ) × (T2 − T1 )
×
max{VOUT (T2 ,T3 )} − min{VOUT (T2 ,T3 )}
VOUT (T2 ) × (T3 − T2 )
×
106 [ ppm / °C ]
TCVOUT = max{TCVOUT1 ,TCVOUT 2 }
(1)
where:
VOUT(T) is the output voltage at Temperature T.
T1 = −40°C.
T2 = +25°C.
T3 = +125°C.
Solder Heat Resistance (SHR) Drift
SHR drift refers to the permanent shift in output voltage
induced by exposure to reflow soldering, expressed in units of
ppm. This is caused by changes in the stress exhibited upon the
die by the package materials when exposed to high temperatures. This effect is more pronounced in lead-free soldering
processes due to higher reflow temperatures.
ΔVOUT _ HYS = VOUT (25°C ) − VOUT _ TC [V]
VOUT (25°C )
× 106 [ppm]
Line Regulation
Line regulation refers to the change in output voltage in response
to a given change in input voltage and is expressed in percent
per volt, ppm per volt, or microvolts per volt change in input
voltage. This parameter accounts for the effects of self-heating.
Thermally Induced Output Voltage Hysteresis (ΔVOUT_HYS)
Thermally induced output voltage hysteresis represents the
change in output voltage after the device is exposed to a
specified temperature cycle. This is expressed as either a shift in
voltage or a difference in ppm from the nominal output.
VOUT (25°C ) − VOUT _ TC
VOUT (t 0 )
where:
VOUT(t0) is the VOUT at 50°C at Time 0.
VOUT(t1) is the VOUT at 50°C after 1000 hours of operation
at 50°C.
This three-point method ensures that TCVOUT accurately
portrays the maximum difference between any of the three
temperatures at which the output voltage of the part is
measured.
ΔVOUT _ HYS =
VOUT (t 1 ) −VOUT (t 0 )
Load Regulation
Load regulation refers to the change in output voltage in
response to a given change in load current and is expressed in
microvolts per mA, ppm per mA, or ohms of dc output
resistance. This parameter accounts for the effects of selfheating.
106 [ ppm / °C ]
TCVOUT 2 =
ΔVOUT _ LTD =
× 10 6 [ppm]
where:
VOUT(25°C) is the output voltage at 25°C.
VOUT_TC is the output voltage after temperature cycling.
Rev. 0 | Page 16 of 20
Data Sheet
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
THEORY OF OPERATION
VIN
ENABLE
BAND GAP
VOLTAGE
REFERENCE
LONG-TERM OUTPUT VOLTAGE DRIFT
VBG
VOUT FORCE
VOUT SENSE
RFB1
GND FORCE
09594-036
RFB2
GND SENSE
Figure 36. Block Diagram
The ADR3525W/ADR3530W/ADR3533W/ADR3540W/
ADR3550W use a patented voltage reference architecture to
achieve high accuracy, low temperature coefficient (TC), and
low noise in a CMOS process. Like all band gap references, the
references combine two voltages of opposite TCs to create an
output voltage that is nearly independent of ambient temperature. However, unlike traditional band gap voltage references, the
temperature-independent voltage of the references is arranged to
be the base-emitter voltage, VBE, of a bipolar transistor at room
temperature rather than the VBE extrapolated to 0 K (the VBE of
bipolar transistor at 0 K is approximately VG0, the band gap
voltage of silicon). A corresponding positive TC voltage is then
added to the VBE voltage to compensate for its negative TC.
The key benefit of this technique is that the trimming of the
initial accuracy and TC can be performed without interfering
with one another, thereby increasing overall accuracy across
temperature. Curvature correction techniques further reduce
the temperature variation.
The band gap voltage (VBG) is then buffered and amplified to
produce stable output voltages of 2.5 V and 5.0 V. The output
buffer can source up to 10 mA and sink up to −3 mA of load
current.
The ADR35xx references leverage Analog Devices patented
DigiTrim technology to achieve high initial accuracy and low
TC, and precision layout techniques lead to very low long-term
drift and thermal hysteresis.
One of the key parameters of the ADR35xx references is longterm output voltage drift. Independent of the output voltage
model and in a 50°C environment, these devices exhibit a
typical drift of approximately 30 ppm after 1000 hours of
continuous, unloaded operation.
It is important to understand that long-term output voltage drift
is not tested or guaranteed by design and that the output from
the device may shift beyond the typical 30 ppm specification.
Because most of the drift occurs in the first 200 hours of device
operation, burning in the system board with the reference
mounted can reduce subsequent output voltage drift over time.
See the AN-713 Application Note, The Effect of Long-Term Drift
on Voltage References, at www.analog.com for more information
regarding the effects of long-term drift and how it can be
minimized.
POWER DISSIPATION
The ADR35xx voltage references are capable of sourcing up to
10 mA of load current at room temperature across the rated
input voltage range. However, when used in applications subject
to high ambient temperatures, the input voltage and load current should be carefully monitored to ensure that the device
does not exceed its maximum power dissipation rating. The
maximum power dissipation of the device can be calculated via
the following equation:
PD 
TJ  TA
 JA
[W ]
where:
PD is the device power dissipation.
TJ is the device junction temperature.
TA is the ambient temperature.
θJA is the package (junction-to-air) thermal resistance.
Because of this relationship, the acceptable load current in high
temperature conditions may be less than the maximum currentsourcing capability of the device. In no case should the part be
operated outside of its maximum power rating because doing so
can result in premature failure or permanent damage to the device.
Rev. 0 | Page 17 of 20
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
APPLICATIONS INFORMATION
BASIC VOLTAGE REFERENCE CONNECTION
1µF
0.1µF
8 VIN
VOUT FORCE 6
1 ENABLE
VOUT SENSE 7
AD3525/ADR3530/
ARD3533/ADR3540/
ADR3550
VOUT
2.5V
0.1µF
09594-037
GND SENSE 2
GND FORCE 3
voltages can be sensed accurately. These voltages are fed back
into the internal amplifier and used to automatically correct for
the voltage drop across the current-carrying output and ground
lines, resulting in a highly accurate output voltage across the
load. To achieve the best performance, the sense connections
should be connected directly to the point in the load where the
output voltage should be the most accurate. See Figure 38 for an
example application.
OUTPUT CAPACITOR(S) SHOULD
BE MOUNTED AS CLOSE
TO VOUT FORCE PIN AS POSSIBLE.
Figure 37. Basic Reference Connection
The circuit shown in Figure 37 illustrates the basic configuration
for the ADR35xx references. Bypass capacitors should be
connected according to the following guidelines.
0.1µF
VIN
INPUT AND OUTPUT CAPACITORS
A 1 μF to 10 μF electrolytic or ceramic capacitor can be
connected to the input to improve transient response in
applications where the supply voltage may fluctuate. An
additional 0.1 μF ceramic capacitor should be connected
in parallel to reduce high frequency supply noise.
1µF
0.1µF
8 V
IN
VOUT FORCE 6
1 ENABLE
VOUT SENSE 7
AD3525/ADR3530/
ARD3533/ADR3540/
ADR3550
LOAD
SENSE CONNECTIONS
SHOULD CONNECT AS
CLOSE TO LOAD
DEVICE AS POSSIBLE.
GND SENSE 2
GND FORCE 3
09594-038
VIN
2.7V TO
5.5V
Figure 38. Application Showing Kelvin Connection
A ceramic capacitor of at least a 0.1 μF must be connected to
the output to improve stability and help filter out high frequency noise. An additional 1 μF to 10 μF electrolytic or
ceramic capacitor can be added in parallel to improve transient
performance in response to sudden changes in load current;
however, the designer should keep in mind that doing so
increases the turn-on time of the device.
Best performance and stability is attained with low ESR (for
example, less than 1 Ω), low inductance ceramic chip-type
output capacitors (X5R, X7R, or similar). If using an electrolytic
capacitor on the output, a 0.1 μF ceramic capacitor should be
placed in parallel to reduce overall ESR on the output.
4-WIRE KELVIN CONNECTIONS
Current flowing through a PCB trace produces an IR voltage
drop, and with longer traces, this drop can reach several
millivolts or more, introducing a considerable error into the
output voltage of the reference. A 1 inch long, 5 millimeter wide
trace of 1 ounce copper has a resistance of approximately
100 mΩ at room temperature; at a load current of 10 mA, this
can introduce a full millivolt of error. In an ideal board layout,
the reference should be mounted as close to the load as possible
to minimize the length of the output traces, and, therefore, the
error introduced by voltage drop. However, in applications
where this is not possible or convenient, force and sense
connections (sometimes referred to as Kelvin sensing
connections) are provided as a means of minimizing the IR
drop and improving accuracy.
Kelvin connections work by providing a set of high impedance
voltage-sensing lines to the output and ground nodes. Because
very little current flows through these connections, the IR drop
across their traces is negligible, and the output and ground
It is always advantageous to use Kelvin connections whenever
possible. However, in applications where the IR drop is negligible or an extra set of traces cannot be routed to the load, the
force and sense pins for both VOUT and GND can simply be
tied together, and the device can be used in the same way as a
normal 3-terminal reference (as shown in Figure 37).
VIN SLEW RATE CONSIDERATIONS
In applications with slow rising input voltage signals, the reference exhibits overshoot or other transient anomalies that appear
on the output. These phenomena also appear during shutdown
as the internal circuitry loses power.
To avoid such conditions, ensure that the input voltage waveform has both a rising and falling slew rate of at least 0.1 V/ms.
SHUTDOWN/ENABLE FEATURE
The ADR35xx references can be switched to a low power shutdown mode when a voltage of 0.7 V or lower is input to the
ENABLE pin. Likewise, the reference becomes operational for
ENABLE voltages of 0.85 × VIN or higher. During shutdown, the
supply current drops to less than 5 μA, useful in applications that
are sensitive to power consumption.
If using the shutdown feature, ensure that the ENABLE pin
voltage does not fall between 0.7 V and 0.85 × VIN because this
causes a large increase in the supply current of the device and
may keep the reference from starting up correctly (see Figure 31).
If not using the shutdown feature, however, the ENABLE pin
can simply be tied to the VIN pin, and the reference remains
operational continuously.
Rev. 0 | Page 18 of 20
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
SAMPLE APPLICATIONS
VIN
8 V
IN
Negative Reference
+5V
VOUT FORCE 6
R1
10kΩ
1 ENABLE V
7
OUT SENSE
Figure 39 shows how to connect the ADR3550 and a standard
CMOS op amp, such as the AD8663, to provide a negative
reference voltage. This configuration provides two main
advantages: first, it requires only two devices and, therefore,
does not require excessive board space; second, and more
importantly, it does not require any external resistors, meaning
that the performance of this circuit does not rely on choosing
expensive parts with low temperature coefficients to ensure
accuracy.
1µF
0.1µF
ADR3550
0.1µF
R2
10kΩ
GND SENSE 2
GND FORCE 3
+15V
–5V
ADA4000-1
R3
5kΩ
09594-040
Data Sheet
–15V
+VDD
Figure 40. ADR3550 Bipolar Output Reference
8
VIN
1
ENABLE VOUT SENSE 7
AD8663
VOUT FORCE 6
ADR3550
GND SENSE 2
Boosted Output Current Reference
–5V
0.1µF
–VDD
GND FORCE 3
0.1µF
Figure 39. ADR3550 Negative Reference
In this configuration, the VOUT FORCE and VOUT SENSE pins of
the reference sit at virtual ground, and the negative reference
voltage and load current are taken directly from the output of
the operational amplifier. Note that in applications where the
negative supply voltage is close to the reference output voltage,
a dual-supply, low offset, rail-to-rail output amplifier must be
used to ensure an accurate output voltage. The operational
amplifier must also be able to source or sink an appropriate
amount of current for the application.
Figure 41 shows a configuration for obtaining higher current
drive capability from the ADR35xx references without
sacrificing accuracy. The op amp regulates the current flow
through the MOSFET until VOUT equals the output voltage of
the reference; current is then drawn directly from VIN instead of
from the reference itself, allowing increased current drive
capability.
VIN
+16V
U6
8
1
1µF 0.1µF
Bipolar Output Reference
VIN
VOUT FORCE 6
ENABLE
VOUT SENSE 7
AD3525/ADR3530/
ARD3533/ADR3540/
ADR3550
R1
100Ω
2N7002
AD8663
VOUT
0.1µF
RL
200Ω
CL
0.1µF
GND SENSE 2
Figure 40 shows a bipolar reference configuration. By connecting
the output of the ADR3550 to the inverting terminal of an
operational amplifier, it is possible to obtain both positive and
negative reference voltages. R1 and R2 must be matched as
closely as possible to ensure minimal difference between the
negative and positive outputs. Resistors with low temperature
coefficients must also be used if the circuit is used in environments
with large temperature swings; otherwise, a voltage difference
develops between the two outputs as the ambient temperature
changes.
GND FORCE 3
09594-041
0.1µF
09594-039
1µF
Figure 41. Boosted Output Current Reference
Because the current-sourcing capability of this circuit depends
only on the ID rating of the MOSFET, the output drive capability
can be adjusted to the application simply by choosing an
appropriate MOSFET. In all cases, the VOUT SENSE pin should
be tied directly to the load device to maintain maximum output
voltage accuracy.
Rev. 0 | Page 19 of 20
ADR3525/ADR3530/ADR3533/ADR3540/ADR3550
Data Sheet
OUTLINE DIMENSIONS
3.20
3.00
2.80
3.20
3.00
2.80
8
1
5.15
4.90
4.65
5
4
PIN 1
IDENTIFIER
0.65 BSC
0.95
0.85
0.75
15° MAX
1.10 MAX
0.40
0.25
6°
0°
0.23
0.09
0.80
0.55
0.40
COMPLIANT TO JEDEC STANDARDS MO-187-AA
10-07-2009-B
0.15
0.05
COPLANARITY
0.10
Figure 42. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions show in millimeters
ORDERING GUIDE
Model 1, 2
ADR3525WARMZ-R7
ADR3525WBRMZ-R7
ADR3530WARMZ-R7
ADR3530WBRMZ-R7
ADR3533WARMZ-R7
ADR3533WBRMZ-R7
ADR3540WARMZ-R7
ADR3540WBRMZ-R7
ADR3550WARMZ-R7
ADR3550WBRMZ-R7
1
2
Output Voltage (V)
2.500
2.500
3.000
3.000
3.300
3.300
4.096
4.096
5.000
5.000
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Package Description
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
Package Option
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
Ordering
Quantity
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Branding
R3C
R2T
R3D
R37
R3E
R38
R3F
R39
R3G
R3B
Z = RoHS Compliant Part.
W = Qualified for Automotive Applications.
AUTOMOTIVE PRODUCTS
The ADR3525W/ADR3530W/ADR3533W/ADR3540W/ADR3550W models are available with controlled manufacturing to support the
quality and reliability requirements of automotive applications. Note that these automotive models may have specifications that differ
from the commercial models; therefore, designers should review the Specifications section of this data sheet carefully. Only the
automotive grade products shown are available for use in automotive applications. Contact your local Analog Devices account
representative for specific product ordering information and to obtain the specific Automotive Reliability reports for these models.
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