AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic BVDSS -20V RDS(ON) 150mΩ ID G -10A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252(H) This device is suited for low voltage and lower power applications. G D TO-251(J) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage - 20 V VGS Gate-Source Voltage ± 12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -10 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -6.2 A 1 IDM Pulsed Drain Current -24 A PD@TC=25℃ Total Power Dissipation 15.6 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 8.0 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 201029074-1/4 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - VGS=-4.5V, ID=-2.8A - - 150 mΩ VGS=-2.5V, ID=-2.0A - - 250 mΩ VDS=VGS, ID=-250uA -0.5 - - V VDS=-5V, ID=-2.8A - 2.8 - S VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-16V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±12V - - ID=-2.8A - 4.2 - nC Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS Min. Typ. Max. Units 2 2 - V ±100 nA Qg Total Gate Charge Qgs Gate-Source Charge VDS=-6V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.4 - nC VDS=-6V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 8 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-5V - 13 - ns tf Fall Time RD=6Ω - 5 - ns Ciss Input Capacitance VGS=0V - 320 - pF Coss Output Capacitance VDS=-6V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Min. Typ. Max. Units Tj=25℃, IS=-10A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-2.8A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Maximum junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP3310GH/J 20 20 T C =25 o C T C =150 o C -5.0V -4.5V -5.0V -4.5V 16 -3.5V 12 -2.5V 8 -ID , Drain Current (A) -ID , Drain Current (A) 16 V G = -2.0V 4 65mΩ 12 -3.5V 8 -2.5V V G = -2.0V 4 0 0 0 1 2 3 4 5 6 7 8 0 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 7 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 280 I D =-2A I D = -2.8A V GS = -4.5V T C =25 o C 1.4 Normalized RDS(ON) 240 RDS(ON) (Ω ) 1 200 160 1.2 1 0.8 120 0.6 80 0 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 4 1.2 -IS(A) Normalized -VGS(th) (V) 1.4 T j =150 o C 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 3 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 2 1 0.8 0.6 1 2.01E+08 0.4 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP3310GH/J f=1.0MHz 12 1000 I D = -2.8A V DS = -6V Ciss 65mΩ 8 C (pF) -VGS , Gate to Source Voltage (V) 10 6 100 Coss 4 Crss 2 0 10 0 1 2 3 4 5 6 7 8 9 10 1 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 Normalized Thermal Response (Rthjc) 100 -ID (A) 100us 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse 0.1 DUTY=0.5 0.2 0.1 PDM 0.1 t 0.05 T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + 0.01 Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -5V QGS QGD 10% VGS td(on) tr Charge Q td(off) tf Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 E1 B1 F1 e Millimeters SYMBOLS F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 3310GH LOGO YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence ADVANCED POWER ELECTRONICS CORP. D Millimeters A c1 SYMBOLS MIN D1 NOM MAX Original Original E2 E1 E A1 B2 F B1 Original A 2.10 2.30 2.50 A1 0.60 1.20 1.80 B1 0.40 0.60 0.80 B2 0.60 0.95 1.25 c c1 0.40 0.50 0.65 0.40 0.55 0.70 D 6.00 6.50 7.00 D1 4.80 5.40 5.90 E1 5.00 5.50 6.00 E2 1.20 1.70 2.20 e ---- 2.30 ---- F 7.00 --- 16.70 1.All Dimensions Are in Millimeters. c e 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number meet Rohs requirement Package Code 3310GJ LOGO YWWSSS Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence