K2611B Product Description
Silicon N-Channel MOSFET
Features
D
�
11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 66nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Improved dv/dt capability
�
RoHS product
G
S
General Description
This N-Channel enhancement mode power field effect transistors are
produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance , provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power
supplies.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
900
V
Continuous Drain Current(@Tc=25℃)
11
A
Continuous Drain Current(@Tc=100℃)
6.9*
A
44
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
970
mJ
IAR
Avalanche Current
(Note1)
11
A
EAR
Repetitive Avalanche Energy
(Note1)
30.1
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.1
V/ ns
Total Power Dissipation(@Tc=25℃)
277
W
Derating Factor above 25℃
2.22
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
TL
Channel Temperature
300
℃
PD
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.45
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
40
℃/W
WT-F055-Rev.A1 Jan.2014
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K2611B Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=900V,VGS=0V
-
-
1
µA
10
µA
IDSS
VDS=720V,Tc=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=250µA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250µA
3.0
-
5.0
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=5.5A
-
0.90
1.10
Ω
Forward Transconductance
gfs
VDS=40V,ID=5.5A
-
9.5
-
S
Input capacitance
Ciss
VDS=25V,
-
2550
3340
Reverse transfer capacitance
Crss
VGS=0V,
-
22
30
Output capacitance
Coss
f=1MHz
-
210
270
VDD=450V,
-
130
280
ID=11A
-
54
122
RG=25Ω
-
80
181
-
125
304
-
66
80
-
13
-
-
35
-
Min
Type
Turn-on Rise time
tr
Turn-on Delay time
td(on)
pF
Switching time
ns
Turn-on Fall time
tf
Turn-off Delay time
(Note4,5)
td(off)
Total gate charge(gate-source
VDD=720V,
Qg
plus gate-drain)
VGS=10V,
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=11A
(Note4,5)
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Max
Unit
Continuous drain reverse current
IDR
-
-
-
11
A
Pulse drain reverse current
IDRP
-
-
-
44
A
Forward voltage(diode)
VDSF
IDR=11A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=11A,VGS=0V,
-
999
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
16.9
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=11A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤11A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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K2611B Product Description
Silicon N-Channel MOSFET
VG S
15V
10V
9V
8V
7V
6 .5 V
6V
5 .5 V
B o tto m 5 V
10
10
150。C
I D[A]
I D[ A]
To p
2 5。C
1
Notes:
1.250us pulse test
2.Tc=25。C
1
Notes:
1.250us pulse test
2.VD S =40V
0 .1
1
10
2
4
6
8
10
V G S [V]
VD S [ V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
1 .4
1 .2
I DR[A]
R DS (on)[ Ω ]
10
VG S =10V
150。C
1
1 .0
。
25 C
VG S =20V
Notes:
1.250us pulse test
2.V G S =0V
。
0 .8
N ote:T j = 25 C
0
2
4
5
6
10
12
14
16
18
20
0 .1
0 .2
0 .3
0 .4
0 .5
0 .6
0 .7
0 .8
1 .1
1.2
1.3
1.4
1.5
Fig.4 Body Diode Forward voltage
Variation with Source Current And
Temperature
Fig.3 On-Resistance Variation vs
Drain current and Gate Voltage
12
4500
Ciss=Cgs+Cgd(Cds=shorted)
4000
Coss=Cds+Cgd
Cis s
3000
2500
2000
Co s s
1500
1000
Cr s s
500
0
1 0 -1
VD S =720V
VD S =450V
10
Crss=Cgd
V GS Gate Source Voltage[V]
3500
Capacitance[pF]
1 .0
V S D [V]
ID [A]
VD S =180V
8
6
4
2
*Note:ID =11A
0
100
0
101
10
VD S Drain-Source Voltage[V]
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20
30
40
50
60
70
Qg Toltal Gate Charge[nC]
Fig.5 Capacitance Characteristics
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Fig.6 Gate Charge Characteristics
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K2611B Product Description
Silicon N-Channel MOSFET
1 .2
4 .0
1 .1
3 .0
R DS(on)(Normalized)
BV D S (Normalized)
3 .5
1 .0
0 .9
2 .5
2 .0
1 .5
1 .0
Notes:
1.V G S =0V
2.I D =250uA
0 .8
-7 5
-5 0
-2 5
25
0
50
。
Tj [ C ]
100
75
125
Notes:
1.V G S =10V
2.I D =5.5A
0 .5
0 .0
-7 5
150
-5 0
-2 5
Fig.7 Breakdown Voltage Variation
vs.Temperature
25
0
50
。
Tj [ C ]
75
100
125
150
Fig.8 On-Resistance Variation
vs.Temperature
12
Operation on This Area
is limited by RDS (ON)
10
I D D rain C urrent[A]
I D DrainCurrent[A]
10
2
10µs
100µ s
101
1m s
10ms
100ms
100
8
6
4
DC
Note:
1.T C =25 。
C
。
2.T C =150 C
3.Single Pulse
1 0 -1
100
2
102
101
VD S Drain-SourceVoltage[V]
0
25
103
50
75
100
。
TC Case Temperature[ C ]
125
150
Fig.10 Maximum Drain Current
vs Case temperature
Fig.9 Maximum Safe Operation Area
ZθJC(t),Thermal Response
1
D = 0. 5
0. 2
0 .1
0. 1
*Notes:
。
1.ZθJ C (t)=0.45 C/W Max.
2.Duty Factor,D=t1/t2
3.T JM -T C =PDM * ZθJ C (t)
0. 05
0. 02
0. 01
PD M
0 .0 1
t1
t2
Single pulse
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
t 1 Square Wave Pulse Duration[sec]
Fig.11 Transient thermal Response Curve
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K2611B Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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K2611B Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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K2611B Product Description
Silicon N-Channel MOSFET
TO-3PB Package Dimension
U n it:m m
E
A
ФP
符 号
symbol
L2
D
Q
F
M in
M ax
A
4. 60
5. 00
B
2. 90
3. 20
B1
1. 90
2. 20
b
0. 90
1. 10
c
0. 50
0. 70
D
19. 40
20. 40
E
15. 40
15. 80
5 . 45（TYP )
e
B1
L
B
e
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F
1. 40
1. 60
L
19. 50
20. 50
L2
3. 30
3. 70
Q
4. 90
5. 10
Q1
1 .3 0
1. 50
P
3. 10
3. 50
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K2611B Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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