BA679, BA679S Vishay Semiconductors RF PIN Diodes - Single in MiniMELF SOD-80 Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications • Current controlled HF resistance in adjustable attenuators 94 9371 Mechanical Data Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: Black Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Type differentiation Ordering code Type Marking Remarks BA679 Part ZR > 5 kΩ BA679-GS18 or BA679-GS08 - Tape and Reel BA679S ZR > 9 kΩ BA679S-GS18 or BA679S-GS08 - Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 30 Unit V Forward continuous current IF 50 mA Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Tj 125 °C Tstg - 55 to + 150 °C Junction temperature Storage temperature range Document Number 85529 Rev. 1.7, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BA679, BA679S Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Max Unit 1000 mV IR 50 nA f = 100 MHz, VR = 0 CD 0.5 pF f = 100 MHz, IF = 1.5 mA rf 50 Ω Forward voltage IF = 20 mA VF Reverse current VR = 30 V Diode capacitance Differential forward resistance f = 100 MHz, VR = 0 Reverse impedance BA679 zr 5 BA679S zr 9 Typ. kΩ kΩ τ IF = 10 mA, IR = 10 mA Minority carrier lifetime Min 4 µs Typical Characteristics IF - Forward Current (mA) 100 10 Tamb = 25 °C 1 Scattering Limit 0.1 0.01 0 95 9735 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 20 Π - Circuit with 10 dB Attenuation V 0 = 40 dBmV 0 f 1 = 100 MHz unmodulated - 20 - 40 - 60 - 80 95 9733 Figure 1. Forward Current vs. Forward Voltage rf - Differential Forward Resistance (Ω) a - Typical Cross Modulation Distortion (dB) Tamb = 25 °C, unless otherwise specified 0 20 40 60 80 f 2 , modulated with 200 kHz, m = 100 % (MHz) Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2 10 000 1000 100 10 1 0.001 95 9734 f > 20 MHz Tj = 25 °C 0.01 0.1 1 10 IF - Forward Current (mA) Figure 2. Differential Forward Resistance vs. Forward Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85529 [email protected], [email protected], [email protected] Rev. 1.7, 05-Aug-10 BA679, BA679S Vishay Semiconductors Package Dimensions in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 85529 Rev. 1.7, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 MiniMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number: 84013 Rev. 1.3, 12-Jan-07 For technical questions, contact: [email protected] www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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