Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 f = n n 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline operation Half-bridge output is out of phase with RT Description The IR51H214 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 250 volts. VIN (max) 250V Duty Cycle 50% Deadtime 1.2µs RDS(on) 2.0Ω Ω PD (TA = 25 ºC) 2.0W Package IR51H214 9506 Typical Connection U P TO 250V DC BU S V IN IR 5 1 H 2 1 4 1 6 V CC V B 2 9 R T V IN RT 3 7 C T VO CT TO LO AD 4 COM COM To Order Previous Datasheet Index Next Data Sheet IR51H214 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VIN VB VO VRT VCT ICC IRT dv/dt PD RθJA TJ TS TL Parameter Definition High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage RT Voltage CT Voltage Supply Current (Note 1) RT Output Current Peak Diode Recovery dv/dt Package Power Dissipation @ TA ≤ +25ºC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) Min. Max. -0.3 -0.3 -0.3 -0.3 -0.3 ---5 -------55 -55 --- 250 275 VIN + 0.3 VCC + 0.3 VCC + 0.3 25 5 4.8 2.00 60 150 150 300 Units V mA V/ns W ºC/W ºC Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol VB VIN VO ID ICC TA Note 1: Parameter Definition High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Continuous Drain Current (TA = 25ºC) (TA = 85ºC) Supply Current (Note 1) Ambient Temperature Min. Max. VO + 10 -----------40 VO + VCLAMP 250 250 0.85 0.55 5 125 Units V A mA ºC Because of the IR51H214's application specificity toward off-line supply systems, this IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC supply voltage is normally derived by current feeding the VCC lead (typically by means of a high value resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance power source of greater than VCLAMP. To Order Previous Datasheet Index Next Data Sheet IR51H214 Dynamic Electrical Characteristics VBIAS (VCC, VB) = 12V unless otherwise specified. Symbol trr Qrr DT D Parameter Definition TA = 25ºC Min. Typ. Max. Units Reverse Recovery Time (MOSFET Body Diode) Reverse Recovery Charge (MOSFET Body Diode) Deadtime, LS Turn-Off to HS Turn-On & HS Turn-Off to LS Turn-On RT Duty Cycle Test Conditions ------- 190 0.64 1.2 ------- ns µC µs IF = 850mA di/dt = 100A/µs --- 50 --- % f OSC = 20 kHz Static Electrical Characteristics VBIAS (VCC, VB) = 12V unless otherwise specified. Symbol Parameter Definition TA = 25ºC Min. Typ. Max. Units Supply Characteristics VCCUV+ VCC Supply Undervoltage Positive Going Threshold VCCUV- VCC Supply Undervoltage Negative Going Threshold IQCC Quiescent VCC Supply Current VCLAMP VCC Zener Shunt Clamp Voltage Floating Supply Characteristics IQBS Quiescent VBS Supply Current IOS Offset Supply Leakage Current--Oscillator I/O Characteristics f OSC Oscillator Frequency --- --- 8.4 --- --- 8.0 --- ----- 300 15.6 ----- µA V --- 30 V --- µA 20 --- V 50 ----- CT Input Current CT Undervoltage Lockout --RT High Level Output Voltage, VCC - RT VRT- RT Low Level Output Voltage VRTUV RT Undervoltage Lockout, VCC - RT VCT+ 2/3 VCC Threshold VCT1/3 VCC Threshold Output Characteristics RDS(on) Static Drain-to-Source On-Resistance VSD Diode Forward Voltage --0.8 100 --- To Order 100 --- --- 0.001 ----20 --200 --20 --200 --100 --8.0 --4.0 1.0 µA 2.5V < V ----mV --------V --- --- --- 2.0 ICC = 5 mA B kHz ICT VCTUV VRT+ Test Conditions Ω V = VIN = 250V RT = 35.7 kΩ, CT = 1 nF RT = 7.04 kΩ, CT = 1 nF CC < VCCUV+ IRT = -100 µA IRT = -1 mA IRT = 100 µA IRT = 1 mA 2.5V < VCC < VCCUV+ ID = 850mA Tj = 150 ºC Previous Datasheet Index Next Data Sheet IR51H214 Functional Block Diagram VB V IN 6 9 1 IR F C 2 1 4 VCC 2 RT 7 IR 2 1 5 1 VO 3 CT IR F C 2 1 4 4 COM Lead Definitions Lead Symbol Description VCC Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V nominal is included to allow the Vcc to be current fed directly from VIN typically by means of a high value resistor. RT Oscillator timing resistor input; a resistor is connected from RT to CT . RT is out of phase with the half-bridge output (VO). CT Oscillator timing capacitor output; a capacitor is connected from CT to COM in order to program the oscillator frequency according to the following equation: 1 f = 1. 4 × (RT + 75 Ω ) × CT where 75Ω is the effective impedance of the RT output stage. VB High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. VIN High voltage supply. VO Half-bridge output. COM Logic and low side of half-bridge return. To Order Previous Datasheet Index Next Data Sheet IR51H214 Lead Assignments 1 2 VCC RT 3 4 CT COM 6 7 9 VB V0 VIN 9 Lead SIP w/o Leads 5 & 8 IR51H214 VCCUV+ RT VCLAMP 50% 50% VCC 90% RT HIGH SIDE CT 10% DT V+ VO 0 Figure 1. Input/Output Timing Diagram To Order LOW SIDE 90% 10% Figure 2. Deadtime Waveform Definitions Previous Datasheet Index Next Data Sheet IR51H214 Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 1996 International Rectifier Printed in U.S.A. 3-96 To Order Data and specifications subject to change without notice.