Analog Power AM4825P P-channel 30-v (d-s) mosfet Datasheet

AM4825P
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
13 @ VGS = -10V
-30
19 @ VGS = -4.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
ID (A)
-11.5
-9.3
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-30
Drain-Source Voltage
VDS
V
VGS
±25
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
-11.5
ID
IDM
±50
IS
-2.1
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
Symbol
t <= 5 sec
t <= 5 sec
RθJC
RθJA
A
3.1
PD
W
2.3
TJ, Tstg
Operating Junction and Storage Temperature Range
A
-9.3
o
C
-55 to 150
Maximum
25
50
Units
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4825_G
AM4825P
Analog Power
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Min
Limits
Unit
Typ Max
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VGS = 0 V, ID = -250 uA
-30
VGS(th)
VDS = VGS, ID = -250 uA
-1
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V(BR)DSS
A
IDSS
V
VDS = 0 V, VGS = ±25 V
±100
nA
VDS = -24 V, VGS = 0 V
-1
-5
uA
o
VDS = -24 V, VGS = 0 V, TJ = 55 C
ID(on)
VDS = -5 V, VGS = -10 V
rDS(on)
VGS = -10 V, ID = -11.5 A
VGS = -4.5 V, ID = -9.3 A
Forward Tranconductance
gfs
VDS = -15 V, ID = -11.5 A
29
S
Diode Forward Voltage
VSD
IS = 2.5 A, VGS = 0 V
-0.8
V
A
Drain-Source On-Resistance
A
Dynamic
-50
A
13
19.0
mΩ
b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Qgd
Ciss
Coss
Crss
td(on)
Rise Time
Turn-Off Delay Time
Fall-Time
tr
td(off)
25
VDS = -15 V, VGS = -5 V,
ID = -11.5 A
VDS=-15V, VGS=0V, f=1MHz
VDD = -15 V, RL = 6 Ω ,
= -1 A, VGEN = -10 V
tf
ID
11
nC
17
2300
600
300
15
pF
13
100
nS
54
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM4825_G
AM4825P
Analog Power
Typical Electrical Characteristics (P-Channel)
-5 0
4 V thru 1 0 v
-4 0
3 .5 V
-3 0
-2 0
3V
-1 0
2 .5 V
0
0
-1
-2
-3
VDS - Dra in to S o urc e Vo lta ge (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.05
1.6
VGS=10V
ID=11.5A
1.5
Normalized rDS(on)
1.4
0.04
1.3
RDS(ON)
1.2
1.1
1.0
0.9
0.8
0.03
ID =11.5a
0.02
0.01
0.7
0
0.6
-50
-25
0
25
50
75
100
125
0
150
2
4
6
8
10
VGS - Gate to Source Voltage (V)
TJ - Junction Temperature (ºC)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance with Gate to Source Voltage
100
-50
10
I - Drain Current (A)
IS - Source Current (A)
25C
TJ = 150°C
TJ = 25°C
1
-40
125C
-55C
-30
-20
-10
0
0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage (V)
VSD - Source to Drain Current (V)
Figure 6. Body Diode Forward Voltage Variation
Figure 5. Transfer Characteristics
with Source Current and Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM4825_G
AM4825P
Analog Power
Typical Electrical Characteristics (P-Channel)
4000
VGS Gate to Source Voltage (V)
10
VDS = 10V
Capacit ance (pF)
8
6
4
2
2000
CRSS
10
20
30
40
0
50
0
-5
-1 0
Figure 7. Gate Charge Characteristics
-2 0
Figure 8. Capacitance Characteristics
50
45
40
0.8
0.6
35
30
25
20
15
0.4
Power (W)
Variance (V)
-1 5
VDS (V)
QGS, T otal Gate Charge (nC)
0.2
0
V
COSS
1000
0
0
CISS
3000
-0.2
10
5
0
0.01
-0.4
-50
-25
0
25
50
75
100
125 150
T J - Juncation T emperature (ºC)
0.1
1
10
100
1000
Pulse T ime (S)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.5
0.2
P DM
0.1
0.1
t1
t2
0.05
0.02
1. Duty Cycal D = t1/t2
2. Per Unit Base RθJ A =70C/W
3. TJ M - TA = PDM Zθjc
4. Sureface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM4825_G
AM4825P
Analog Power
Package Information
SO-8: 8LEAD
H x 45°
5
PRELIMINARY
Publication Order Number:
DS-AM4825_G
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