SeCoS MMBTA56 Pnp plastic encapsulated transistor Datasheet

MMBTA56
-0.5A , -80V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
General Purpose Amplifier Applications
A
L
3
3
MARKING
C B
Top View
1
2GM
1
2
K
E
2
D
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7’ inch
F
H
G
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
-80
-80
-4
-500
225
V
V
V
mA
mW
RθJA
555
°C / W
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
http://www.SeCoSGmbH.com/
11-Jul-2011 Rev. A
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
VBE
fT
-80
-80
-4
100
100
50
-
-0.1
-0.1
-0.1
400
-0.25
-1.2
-
V
V
V
µA
µA
µA
IC= -100µA, IE=0
IC= -1mA, IB=0
IE= -100µA, IC=0
VCB= -80V, IE=0
VCE= -60V, IB=0
VEB= -4V, IC=0
VCE= -1V, IC= -10mA
VCE= -1V, IC= -100mA
IC= -100mA, IB = -10mA
VCE= -1V, IC= -100mA
VCE= -1V,IC= -100mA, f=100MHz
V
V
MHz
Any changes of specification will not be informed individually.
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