Microchip MCP1416T-OT Tiny 1.5a, high-speed power mosfet driver Datasheet

MCP1415/16
Tiny 1.5A, High-Speed Power MOSFET Driver
Features
General Description
• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 470 pF in 13 ns (typical)
- 1000 pF in 20 ns (typical)
• Short Delay Times: 41 ns (tD1), 48 ns (tD2)
(typical)
• Low Supply Current:
- With Logic ‘1’ Input - 0.65 mA (typical)
- With Logic ‘0’ Input - 0.1 mA (typical)
• Latch-Up Protected: Will Withstand 500 mA
Reverse Current
• Logic Input Will Withstand Negative Swing Up to
5V
• Space-saving 5L SOT-23 Package
MCP1415/16 devices are high-speed MOSFET drivers
that are capable of providing 1.5A of peak current. The
inverting or non-inverting single channel output is
directly controlled from either TTL or CMOS (3V to
18V) logic. These devices also feature low shootthrough current, matched rise and fall time, and short
propagation delays which make them ideal for high
switching frequency applications.
Applications
•
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
MCP1415/16 devices operate from a single 4.5V to
18V power supply and can easily charge and discharge
1000 pF gate capacitance in under 20 ns (typical).
They provide low enough impedances in both the on
and off states to ensure that the intended state of the
MOSFET will not be affected, even by large transients.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
are not subject to damage when noise spiking (up to
5V, of either polarity) occurs on the ground pin. They
can accept, without damage or logic upset, up to
500 mA of reverse current being forced back into their
outputs. All terminals are fully protected against
Electrostatic Discharge (ESD) up to 2.0 kV (HBM) and
400V (MM).
Package Types:
SOT-23-5
MCP1415
NC 1
MCP1416
5 OUT
OUT
4 GND
GND
VDD 2
IN 3
MCP1415R MCP1416R
NC 1
5
VDD
VDD
4
OUT
OUT
GND 2
IN 3
 2010 Microchip Technology Inc.
DS22092D-page 1
MCP1415/16
Functional Block Diagram
Inverting
VDD
650 µA
300 mV
Output
Non-inverting
Input
Effective
Input C = 25 pF
(Each Input)
4.7V
MCP1415 Inverting
MCP1416 Non-inverting
GND
Note:
DS22092D-page 2
Unused inputs should be grounded.
 2010 Microchip Technology Inc.
MCP1415/16
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device
reliability.
Absolute Maximum Ratings †
VDD, Supply Voltage............................................. +20V
VIN, Input Voltage.............. (VDD + 0.3V) to (GND - 5V)
Package Power Dissipation (TA = 50°C)
5L SOT23...................................................... 0.39W
ESD Protection on all Pins ......................2.0 kV (HBM)
....................................................................400V (MM)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V  VDD  18V
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’ High Input Voltage
VIH
2.4
1.9
—
V
Logic ‘0’ Low Input Voltage
VIL
—
1.6
0.8
V
Input Current
IIN
-1
—
+1
µA
Input Voltage
VIN
-5
—
VDD+0.3
V
VOH
VDD - 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
6
7.5

IOUT = 10 mA, VDD = 18V
(Note 2)
Output Resistance, Low
ROL
—
4
5.5

IOUT = 10 mA, VDD = 18V
(Note 2)
Input
0V  VIN  VDD
Output
High Output Voltage
Peak Output Current
IPK
—
1.5
—
A
VDD = 18V (Note 2)
Latch-Up Protection Withstand
Reverse Current
IREV
0.5
—
—
A
Duty cycle  2%, t  300 µs
(Note 2)
Rise Time
tR
—
20
25
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Fall Time
tF
—
20
25
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Delay Time
tD1
—
41
50
ns
Figure 4-1, Figure 4-2 (Note 2)
Delay Time
tD2
—
48
55
ns
Figure 4-1, Figure 4-2 (Note 2)
VDD
4.5
—
18
V
IS
—
0.65
1.1
mA
VIN = 3V
IS
—
0.1
0.15
mA
VIN = 0V
Switching Time (Note 1)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
Switching times ensured by design.
Tested during characterization, not production tested.
 2010 Microchip Technology Inc.
DS22092D-page 3
MCP1415/16
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, over operating range with 4.5V  VDD  18V.
Parameters
Sym
Min
Typ
Max
Units
VIH
2.4
—
—
V
—
0.8
V
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
VIL
—
Input Current
IIN
-10
—
+10
µA
Input Voltage
VIN
-5
—
VDD+0.3
V
High Output Voltage
VOH
VDD - 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
8.5
9.5

IOUT = 10 mA, VDD = 18V
(Note 2)
Output Resistance, Low
ROL
—
6
7

IOUT = 10 mA, VDD = 18V
(Note 2)
Rise Time
tR
—
30
40
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Fall Time
tF
—
30
40
ns
Figure 4-1, Figure 4-2
CL = 1000 pF (Note 2)
Delay Time
tD1
—
45
55
ns
Figure 4-1, Figure 4-2 (Note 2)
Delay Time
tD2
—
50
60
VDD
4.5
—
18
V
IS
—
0.75
1.5
mA
VIN = 3.0V
IS
—
0.15
0.25
mA
VIN = 0V
0V  VIN  VDD
Output
Switching Time (Note 1)
Figure 4-1, Figure 4-2 (Note 2)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
Switching times ensured by design.
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V
Parameter
Sym
Min
Typ
Max
Units
Comments
Temperature Ranges
Specified Temperature Range
TA
-40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
JA
—
256
—
°C/W
Package Thermal Resistances
Thermal Resistance, 5LD SOT23
DS22092D-page 4
 2010 Microchip Technology Inc.
MCP1415/16
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
300
400
350
250
300
Fall Time (ns)
Rise Time (ns)
10,000 pF
10,000 pF
6,800 pF
250
470 pF
200
3,300 pF
150
100
1,000 pF
50
6,800 pF
200
470 pF
150
3,300 pF
100
1,000 pF
50
0
0
4
6
8
10
12
14
16
18
4
6
8
Supply Voltage (V)
FIGURE 2-1:
Voltage.
FIGURE 2-4:
Voltage.
Rise Time vs. Supply
125
100
75
18V
50
Fall Time (ns)
Rise Time (ns)
150
5V
25
18
Fall Time vs. Supply
150
12V
125
100
75
18V
50
5V
25
0
100
1000
0
100
10000
1000
Capacitive Load (pF)
FIGURE 2-2:
Load.
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
54
CLOAD = 1000 pF
VDD = 18V
25
tRISE
20
tFALL
10000
Capacitive Load (pF)
Propagation Delay (ns)
Time (ns)
16
175
12V
175
15
14
200
200
30
12
Supply Voltage (V)
225
35
10
Fall Time vs. Capacitive
VDD = 12V
52
50
tD2
48
46
tD1
44
42
40
10
-40 -25 -10
5
20
35 50 65 80 95 110 125
4
5
Rise and Fall Times vs.
 2010 Microchip Technology Inc.
7
8
9
10
11
12
Input Amplitude (V)
Temperature (°C)
FIGURE 2-3:
Temperature.
6
FIGURE 2-6:
Input Amplitude.
Propagation Delay Time vs.
DS22092D-page 5
MCP1415/16
115
0.8
105
0.7
95
Quiescent Current (mA)
Propagation Delay (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
tD1
85
75
65
tD2
55
45
35
VDD = 18V
Input = 1
0.6
0.5
0.4
0.3
0.2
Input = 0
0.1
0
4
6
8
10
12
14
16
18
-40 -25 -10
5
Supply Voltage (V)
FIGURE 2-7:
Supply Voltage.
Propagation Delay Time vs.
FIGURE 2-10:
Temperature.
55
50
45
tD2
40
35
Quiescent Current vs.
3.0
VDD = 18V
Input Threshold (V)
Propagation Delay (ns)
60
tD1
30
2.5
2.0
VHI
1.5
VLO
1.0
0.5
-40 -25 -10
5
20
35 50 65 80 95 110 125
4
6
8
Temperature (°C)
FIGURE 2-8:
Temperature.
Propagation Delay Time vs.
FIGURE 2-11:
Voltage.
0.8
2.0
0.7
1.9
0.6
0.5
Input = 1
0.4
0.3
0.2
Input = 0
0.1
10
12
14
16
18
Supply Voltage (V)
Input Threshold (V)
Quiescent Current (mA)
20 35 50 65 80 95 110 125
Temperature (°C)
Input Threshold vs. Supply
VDD = 12V
VHI
1.8
1.7
1.6
1.5
VLO
1.4
1.3
0
4
6
8
10
12
14
16
18
-40 -25 -10
DS22092D-page 6
Quiescent Current vs.
20 35 50 65 80 95 110 125
Temperature (°C)
Supply Voltage (V)
FIGURE 2-9:
Supply Voltage.
5
FIGURE 2-12:
Temperature.
Input Threshold vs.
 2010 Microchip Technology Inc.
MCP1415/16
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
140
VDD = 18V
140
Supply Current (mA)
Supply Current (mA)
160
1 MHz
120
50 kHz
100
100 kHz
80
60
200 kHz
40
500 kHz
20
0
100
VDD = 18V
470 pF
100
1,000 pF
80
3,300 pF
60
40
6,800 pF
20
0
1000
10
10000
100
Supply Current (mA)
80
FIGURE 2-16:
Frequency.
Supply Current vs.
120
VDD = 12V
70
50 kHz
60
50
100 kHz
40
200 kHz
30
20
500 kHz
10
0
100
1000
Supply Current vs.
VDD = 12V
1 MHz
Supply Current (mA)
FIGURE 2-13:
Capacitive Load.
60
3,300 pF
40
1,000 pF
20
1000
35
50 kHz
25
20
100 kHz
15
5
60
1 MHz
30
10
FIGURE 2-17:
Frequency.
Supply Current vs.
VDD = 6V
200 kHz
500 kHz
0
100
1000
10000
Supply Current vs.
 2010 Microchip Technology Inc.
Supply Current vs.
V DD = 6V
10,000 pF
50
40
30
6,800 pF
470 pF
3,300 pF
20
1,000 pF
10
0
100
Capacitive Load (pF)
FIGURE 2-15:
Capacitive Load.
10000
Frequency (kHz)
Supply Current (mA)
Supply Current (mA)
40
6,800 pF
470 pF
80
0
100
10000
10,000 pF
100
Capacitive Load (pF)
FIGURE 2-14:
Capacitive Load.
1000
Frequency (kHz)
Capacitive Load (pF)
90
10,000 pF
120
1000
10000
Frequency (kHz)
FIGURE 2-18:
Frequency.
Supply Current vs.
DS22092D-page 7
MCP1415/16
Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V.
30
25
Crossover Energy (A*sec)
VIN = 0V (MCP1415)
VIN = 5V (MCP1416)
ROUT-HI (Ω)
TA = +125°C
20
15
10
TA = +25°C
5
0
4
6
8
10
12
14
16
18
1E-07
1E-08
1E-09
1E-10
4
6
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
25
10
12
14
16
18
FIGURE 2-21:
Supply Voltage.
Crossover Energy vs.
VIN = 5V (MCP1415)
VIN = 0V (MCP1416)
20
ROUT-LO (Ω)
8
Supply Voltage (V)
Supply Voltage (V)
15
TA = +125°C
10
TA = +25°C
5
0
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
DS22092D-page 8
 2010 Microchip Technology Inc.
MCP1415/16
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
SOT-23-5
3.1
Symbol
Pin
MCP1415/6
MCP1415R/6R
1
NC
NC
Description
No Connection
2
VDD
GND
Supply Input
3
IN
IN
Control Input
4
GND
OUT
Ground
5
OUT
VDD
Output
Supply Input (VDD)
3.3
Ground (GND)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor. This bypass
capacitor provides a localized low impedance path for
the peak currents that are to be provided to the load.
Ground is the device return pin. The ground pin should
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.2
3.4
Control Input (IN)
The MOSFET driver input is a high impedance, TTL/
CMOS compatible input. The input also has hysteresis
between the high and low input levels, allowing them to
be driven from a slow rising and falling signals, and to
provide noise immunity.
 2010 Microchip Technology Inc.
Output (OUT)
The output is a CMOS push-pull output that is capable
of sourcing and sinking 1.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. This output also has
a reverse current latch-up rating of 500 mA.
DS22092D-page 9
MCP1415/16
NOTES:
DS22092D-page 10
 2010 Microchip Technology Inc.
MCP1415/16
4.0
APPLICATION INFORMATION
4.1
General Information
VDD = 18V
1 µF
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1415/16 family can be
used to provide additional source/sink current
capability.
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fullyoff state to a fully-on state are characterized by the
drivers rise time (tR), fall time (tF), and propagation
delays (tD1 and tD2). The MCP1415/16 family of drivers
can typically charge and discharge a 1000 pF load
capacitance in 20 ns along with a typical turn on (tD1)
propagation delay of 41 ns. Figure 4-1 and Figure 4-2
show the test circuit and timing waveform used to verify
the MCP1415/16 timing.
1 µF
Input
+5V
90%
Input
10%
Output
0V
FIGURE 4-1:
Waveform.
0V
10%
18V
tD1 90%
Output
tF
tD2
tR
tD2
10%
0V
90%
tF
10%
Non-Inverting Driver Timing
Decoupling Capacitors
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor is recommended to be placed in
parallel between the driver VDD and GND. A 1.0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins 2 and 4 is required for reliable
operation. These capacitors should be placed close to
the driver to minimize circuit board parasitics and
provide a local source for the required current.
MCP1415
18V
90%
Input
Careful layout and decoupling capacitors are required
when using power MOSFET drivers. Large current are
required to charge and discharge capacitive loads
quickly. For example, approximately 720 mA are
needed to charge a 1000 pF load with 18V in 25 ns.
Output
CL = 1000 pF
tD1
+5V
4.3
0.1 µF
Ceramic
Output
CL = 1000 pF
MCP1416
FIGURE 4-2:
Waveform.
VDD = 18V
0V
Input
0.1 µF
Ceramic
tR
90%
90%
10%
10%
Inverting Driver Timing
 2010 Microchip Technology Inc.
DS22092D-page 11
MCP1415/16
4.4
Power Dissipation
4.4.3
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
P T = PL + PQ + P CC
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describe in Equation 4-4.
EQUATION 4-4:
Where:
P
PT
=
Total power dissipation
PL
=
Load power dissipation
PQ
=
Quiescent power dissipation
PCC
=
Operating power dissipation
4.4.1
CC
= CC  f  V
DD
Where:
CC
=
Cross-conduction constant
(A*sec)
f
=
Switching frequency
VDD
=
MOSFET driver supply voltage
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of the frequency, total capacitive load,
and supply voltage. The power lost in the MOSFET
driver for a complete charging and discharging cycle of
a MOSFET is shown in Equation 4-2.
EQUATION 4-2:
P
Where:
L
= fC V
T
DD
2
f
=
Switching frequency
CT
=
Total load capacitance
VDD
=
MOSFET driver supply voltage
4.4.2
4.5
PCB Layout Considerations
Proper PCB layout is important in high current, fast
switching circuits to provide proper device operation
and robustness of design. Improper component
placement may cause errant switching, excessive
voltage ringing, or circuit latch-up. PCB trace loop area
and inductance must be minimized. This is
accomplished by placing the MOSFET driver directly at
the load and placing the bypass capacitor directly at the
MOSFET driver (Figure 4-3). Locating ground planes
or ground return traces directly beneath the driver
output signal also reduces trace inductance. A ground
plane will also help as a radiated noise shield as well as
providing some heat sinking for power dissipated within
the device (Figure 4-4).
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1415/16 devices have a quiescent current
draw when the input is high of 0.65 mA (typical) and
0.1 mA (typical) when the input is low. The quiescent
power dissipation is shown in Equation 4-3.
EQUATION 4-3:
PQ =  IQH  D + IQL   1 – D    VDD
Where:
IQH
=
Quiescent current in the high
state
D
=
Duty cycle
IQL
=
Quiescent current in the low
state
VDD
=
MOSFET driver supply voltage
DS22092D-page 12
FIGURE 4-3:
(TOP).
Recommended PCB Layout
FIGURE 4-4:
(BOTTOM).
Recommended PCB Layout
 2010 Microchip Technology Inc.
MCP1415/16
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
Example:
5-Lead SOT-23
Standard Markings for SOT-23
Part Number
XXNN
MCP1415T-E/OT
MCP1416T-E/OT
MCP1415RT-E/OT
MCP1416RT-E/OT
1
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Code
FYNN
FZNN
F7NN
F8NN
FYNN
1
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3)
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2010 Microchip Technology Inc.
DS22092D-page 13
MCP1415/16
/HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU 27 >627@
1RWH
)RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW
KWWSZZZPLFURFKLSFRPSDFNDJLQJ
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
8QLWV
'LPHQVLRQ/LPLWV
1XPEHURI3LQV
0,//,0(7(56
0,1
120
0$;
1
/HDG3LWFK
H
%6&
2XWVLGH/HDG3LWFK
H
2YHUDOO+HLJKW
$
±
0ROGHG3DFNDJH7KLFNQHVV
$
±
6WDQGRII
$
±
2YHUDOO:LGWK
(
±
0ROGHG3DFNDJH:LGWK
(
±
2YHUDOO/HQJWK
'
±
%6&
)RRW/HQJWK
/
±
)RRWSULQW
/
±
)RRW$QJOH
ƒ
±
ƒ
/HDG7KLFNQHVV
F
±
/HDG:LGWK
E
±
1RWHV
'LPHQVLRQV'DQG(GRQRWLQFOXGHPROGIODVKRUSURWUXVLRQV0ROGIODVKRUSURWUXVLRQVVKDOOQRWH[FHHGPPSHUVLGH
'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(<0
%6& %DVLF'LPHQVLRQ7KHRUHWLFDOO\H[DFWYDOXHVKRZQZLWKRXWWROHUDQFHV
0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &%
DS22092D-page 14
 2010 Microchip Technology Inc.
MCP1415/16
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2010 Microchip Technology Inc.
DS22092D-page 15
MCP1415/16
NOTES:
DS22092D-page 16
 2010 Microchip Technology Inc.
MCP1415/16
APPENDIX A:
REVISION HISTORY
Revision D (December 2010)
The following is the list of modifications:
1.
2.
Updated Figure 2-19 and Figure 2-20.
Updated the package outline drawings.
Revision C (December 2008)
The following is the list of modifications:
1.
Added the MCP1415R/16R devices throughout
document.
Revision B (June 2008)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
DC Characteristics table, Switching Time, Rise
Time: changed from 13 to 20.
DC Characteristics table, Switching Time, Fall
Time: changed from 13 to 20.
DC Characteristics (Over Operating Temperature Range) table, Switching Time, Rise Time:
changed maximum from 35 to 40.
DC Characteristics (Over Operating Temperature Range) table, Switching Time, Rise Time:
changed typical from 25 to 30.
DC Characteristics (Over Operating Temperature Range) table, Switching Time, Fall Time:
changed maximum from 35 to 40.
DC Characteristics (Over Operating Temperature Range) table, Switching Time, Fall Time:
changed typical from 25 to 30.
Revision A (June 2008)
• Original Release of this Document.
 2010 Microchip Technology Inc.
DS22092D-page 17
MCP1415/16
NOTES:
DS22092D-page 18
 2010 Microchip Technology Inc.
MCP1415/16
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X
/XX
Device
Temperature
Range
Package
Examples:
a)
b)
Device:
MCP1415T: 1.5A MOSFET Driver, Inverting
(Tape and Reel)
MCP1415RT:1.5A MOSFET Driver, Inverting
(Tape and Reel)
MCP1416T: 1.5A MOSFET Driver, Non-Inverting
(Tape and Reel)
MCP1416RT:1.5A MOSFET Driver, Non-Inverting
(Tape and Reel)
a)
b)
MCP1415T-E/OT:
1.5A Inverting,
MOSFET Driver
5LD SOT-23 Package
MCP1415RT-E/OT: 1.5A Inverting,
MOSFET Driver
5LD SOT-23 Package
MCP1416T-E/OT:
1.5A Non-Inverting,
MOSFET Driver
5LD SOT-23 Package
MCP1416RT-E/OT: 1.5A Non-Inverting,
MOSFET Driver
5LD SOT-23 Package
Temperature Range: E = -40C to +125C
Package: *
OT = Plastic Thin Small Outline Transistor (OT), 5-Lead
* All package offerings are Pb Free (Lead Free)
 2010 Microchip Technology Inc.
DS22092D-page 19
MCP1415/16
NOTES:
DS22092D-page 20
 2010 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-667-8
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
 2010 Microchip Technology Inc.
DS22092D-page 21
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
08/04/10
DS22092D-page 22
 2010 Microchip Technology Inc.