Transistors IC SMD Type NPN General Purpose Transistors BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol BCW65 BCW66 Unit Collector-base voltage Parameter VCBO 60 75 V Collector-emitter voltage VCEO 32 45 V Emitter-base voltage VEBO 5 5 V 800 Collector current IC Peak collector current ICM 1 A IB 100 mA Peak base current IBM 200 mA Total power dissipation,TS = 79 mW Base current Ptot 330 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Junction - soldering point RthJS 215 mA K/W www.kexin.com.cn 1 Transistors IC SMD Type BCW65,BCW66 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage BCW65 Testconditons V(BR)CEO IC = 10 mA, IB = 0 BCW66 BCW65 Collector-base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 BCW65 hFE-grp. B/G 20 VCB = 45 V, IE = 0 , TA = 150 20 IEBO VEB = 4 V, IC = 0 20 hFE IC = 100 ìA, VCE = 10 V B/G Base-emitter saturation voltage hFE VBE(sat) Transition frequency IC = 10 mA, VCE = 1 V 110 IC = 100 mA, VCE = 1 V fT 100 160 250 160 250 400 250 350 630 IC = 100 mA, IB = 10 mA 0.3 IC = 500 mA, IB = 50 mA 0.7 IC = 100 mA, IB = 10 mA 1.25 IC = 500 mA, IB = 50 mA 2 IC = 50 mA, VCE = 5 V, f = 100 MHz 170 Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 6 Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz 60 * Pulse test: t 300ìs, D = 2%. hFE Classification BCW65 TYPE Rank A B C Marking EAs EBs ECs BCW66 TYPE 2 50 180 VCE(sat) * Rank F G H Marking EFs EGs EHs www.kexin.com.cn nA 75 hFE C/H Collector-emitter saturation voltage * ìA 80 A/F hFE-grp. nA 35 C/H DC current gain * V VCB = 32 V, IE = 0 , TA = 150 ICBO A/F hFE-grp. B/G 5 20 C/H DC current gain * V VCB = 45 V, IE = 0 A/F DC current gain * 60 20 BCW66 Emitter cutoff current Unit V VCB = 32 V, IE = 0 ICBO BCW66 Collector cutoff current Max 75 V(BR)EBO IE = 10 ìA, IC = 0 BCW65 Typ 32 45 BCW66 Emitter-base breakdown voltage Min V MHz pF