FST16020 thru FST16040 Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 160 A Features • High Surge Capability • Types up to 100V VRRM TO-249AB Package • Isolated to Plate Maximum ratings, at Tj = 25 °C, unless otherwise specified FST16020 FST16030 FST16035 VRRM 20 30 VRMS 14 21 Parameter Symbol Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage VDC Conditions FST16040 Unit 35 40 V 25 28 V 40 V 20 30 35 Continuous forward current IF TC ≤ 100 °C 160 160 160 160 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 1200 1200 1200 1200 A Operating temperature Storage temperature Tj Tstg -40 to 125 -40 to 175 -40 to 125 -40 to 175 -40 to 125 -40 to 175 -40 to 125 -40 to 175 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Conditions FST16020 FST16030 FST16035 FST16040 Unit IF = 160 A, Tj = 25 °C VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C 0.75 1 10 0.75 1 10 0.75 1 10 0.75 1 10 V 1.0 1.0 1.0 1.0 mA Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 °C/W FST16020 thru FST16040 www.genesicsemi.com 2