PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HEB834 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（T c=25℃）…………………… 30W PC——Collector Dissipation（Ta=25℃）……………………1.5W VCBO ——Collector-Base Voltage……………………………-60V 1―Base，B VCEO——Collector-Emitter Voltage………………………… -60V 2―Collector，C 3―Emitter, E VEBO ——Emitter-Base Voltage……………………………… -7V IC——Collector Current……………………………………… -3A Ib——Base Current………………………………………-0.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO ICBO IEBO Characteristics Min Typ Max －６０ Unit Ｖ Test Conditions Collector Cut-off Current －１００ μＡ IC=-50mA, IB=0 VCB=-60V, IE=0 Emitter Cut-off Current －１００ μＡ VEB=-7V, IC=0 Collector-Emitter Breakdown Voltage HFE（1） DC Current Gain ６０ HFE（2） DC Current Gain ２０ ２００ VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A VCE(sat) Collector- Emitter Saturation Voltage －０．５ －１ Ｖ IC=-3A, IB=-0.3A VBE(on) Base-Emitter On Voltage －０．７ －１ Ｖ VCE=-5V, IC=-0.5A ９ ＭＨｚ VCE=-5V, IC=-0.5A, ft Current Gain-Bandwidth Product Cob Output Capacitance １５０ ｐＦ tON Turn-On Time ０．４ μＳ tSTG Storage Time １．７ μＳ Fall Time ０．５ μＳ tF █ hFE Classification O ６０—１２０ Y １００—２００ VCB=-10V, IE=0，f=1ＭＨｚ IB1 = -IB2 =-0.2A VCC=-30V Shantou Huashan Electronic Devices Co.,Ltd. HEB834