NHPV08S600G, NHPJ08S600G SWITCHMODE Power Rectifiers Features • • • • • • http://onsemi.com Ultrafast 30 Nanosecond Recovery Time 150°C Operating Junction Temperature High Voltage Capability of 600 V Low Forward Drop Low Leakage Specified @ 125°C Case Temperature These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PLANAR ULTRAFAST RECTIFIERS 8 A, 600 V 1 4 3 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 3 1 4 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 1 3 TO−220AC CASE 221B 3 TO−220 FULLPAK CASE 221AG MARKING DIAGRAMS AY WW HPV8S600G KA A Y WW G KA *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 April, 2013 − Rev. 1 1 AYWW HPJ8S600G KA = = = = = Assembly Location Year Work Week Pb−Free Package Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NHPV08S600/D NHPV08S600G, NHPJ08S600G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR) TO−220AC TO−220FP IF(AV) 8 A @ TC = 130°C 8 A @ TC = 95°C A Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz) TO−220AC TO−220FP IFRM 8 A @ TC = 125°C 8 A @ TC = 85°C A IFSM 80 A TJ, Tstg −55 to +150 °C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value NHPV08S600G: Thermal Resistance Junction−to−Case (Note 1) RqJC 1.5 NHPJ08S600G: Thermal Resistance Junction−to−Case (Note 1) RqJC 4.25 Unit °C/W °C/W 1. Junction−to−Case shown as a typical value using a fixed 25°C cold plate boundary. ELECTRICAL CHARACTERISTICS Characteristic Test Conditions Symbol Typ Max Unit Instantaneous Forward Voltage (Note 2) (iF = 8 A, TC = 125°C) (iF = 8 A, TC = 25°C) vF 1.5 2.7 1.8 3.2 V Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR 46 0.1 400 30 mA Reverse Recovery Time (IF = 0.5 A, Irr = 0.25 A, IR = 1 A) (IF = 1 A, dIF/dt = −50 A/ms, VR = 30 V) trr − − 30 50 ns Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 8 A, dIF/dt = −200 A/ms, TC = 25°C) trr IRM Qrr S 30 2.3 37 2 50 3 50 − ns A nC − Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 8 A, dIF/dt = −200 A/ms, TC = 125°C) trr IRM Qrr S 45 5.5 150 0.35 − − − − ns A nC − (IF = 8 A, dIF/dt = 120 A/ms, TC = 25°C) tfr VFP − − 200 6 ns V Forward Recovery Time Forward Voltage Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Package Shipping† NHPV08S600G TO−220AC (Pb−Free / Halide−Free) 50 Units / Rail NHPJ08S600G TO−220FP (Pb−Free / Halide−Free) 50 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NHPV08S600G, NHPJ08S600G TYPICAL CHARACTERISTICS IR, INSTANTANEOUS REVERSE CURRENT (mA) 1000 TA = 125°C TA = 150°C 10 TA = 25°C 1 0.1 TA = 150°C 10 TA = 125°C 1 0.1 TA = 25°C 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.001 4.0 100 200 300 400 500 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics C, JUNCTION CAPACITANCE (pF) TJ = 25°C 1 10 100 1000 15 Square Wave 10 5 0 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating TO−220AC 30 IPK/IAV = 20 IPK/IAV = 10 25 IPK/IAV = 5 20 Square Wave 15 DC 10 5 0 TJ = 150°C 0 2 4 6 8 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Forward Power Dissipation http://onsemi.com 3 600 RqJC = 1.5°C/W DC VR, REVERSE VOLTAGE (V) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 10 100 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 NHPV08S600G, NHPJ08S600G PACKAGE DIMENSIONS TO−220 TWO−LEAD CASE 221B−04 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 TO−220 FULLPAK, 2−LEAD CASE 221AG ISSUE O A E B P E/2 0.14 M B A M SEATING PLANE A H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.70 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC e1 5.08 BSC H1 5.97 6.48 L 12.70 14.73 L1 --2.80 P 3.00 3.40 Q 2.80 3.20 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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